CN110914957A - 电子装置的制造方法 - Google Patents
电子装置的制造方法 Download PDFInfo
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- CN110914957A CN110914957A CN201880047322.8A CN201880047322A CN110914957A CN 110914957 A CN110914957 A CN 110914957A CN 201880047322 A CN201880047322 A CN 201880047322A CN 110914957 A CN110914957 A CN 110914957A
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Abstract
本发明的电子装置的制造方法包括下述工序:工序(A),准备结构体(60),所述结构体(60)具备具有电路形成面(10A)的电子部件(10)、以及粘着性层叠膜(50),该粘着性层叠膜(50)依次具有基材层(20)、凹凸吸收性树脂层(30)和粘着性树脂层(40),且粘着性树脂层(40)侧粘贴于电子部件(10)的电路形成面(10A)以保护电路形成面(10A);工序(B),在粘贴于粘着性层叠膜(50)的状态下,对于电子部件(10)形成电磁波屏蔽层(70)。
Description
技术领域
本发明涉及电子装置的制造方法。
背景技术
在电子装置的制造工序中,为了对电子部件赋予电磁波屏蔽性,有时在将电子部件的电路形成面用保护膜等进行保护的状态下,进行在电子部件的表面形成电磁波屏蔽层的工序。通过这样操作,能够对电子部件赋予电磁波屏蔽性,能够阻隔由电子部件产生的电磁波噪声。由此,能够抑制电子部件对周边的其他电子部件造成不良影响。
作为有关这样的电子部件的电磁波屏蔽性的技术,可举出例如专利文献1(国际公开第2010/029819号小册子)所记载的技术。
现有技术文献
专利文献
专利文献1:国际公开第2010/029819号小册子
发明内容
发明所要解决的课题
根据本发明人等的研究,发现了以下课题:在将电子部件的电路形成面用保护膜进行保护的状态下在电子部件的表面形成电磁波屏蔽层时,用于形成电磁波屏蔽层的导电性成分进入电子部件的电路形成面而附着于电路,其结果是有时电路会发生电短路。此外,电路形成面的凹凸越大,则构成电路形成面的电路越易于电短路。特别是使用在电子部件的电路形成面上形成有凸块电极的电子部件的情况下,存在构成电路形成面的电路易于电短路的倾向。
即,本发明人等发现在具有电磁波屏蔽性的电子装置的制造方法中,从一边抑制电子部件的电路形成面的电短路,一边对电子部件赋予电磁波屏蔽性这样的观点来看,存在改善的余地。
本发明是鉴于上述情况而提出的,其提供能够稳定地获得能抑制电路形成面的电短路、且具有电磁波屏蔽性的电子装置的电子装置的制造方法。
用于解决课题的方法
本发明人等为了实现上述课题而反复进行了深入研究。其结果发现,作为保护电子部件的电路形成面的膜,通过使用依次具有基材层、凹凸吸收性树脂层和粘着性树脂层的粘着性层叠膜,从而能够稳定地获得能抑制电路形成面的电短路、且具有电磁波屏蔽性的电子装置,由此完成了本发明。
根据本发明,可提供以下所示的电子装置的制造方法。
[1]
一种电子装置的制造方法,其包括下述工序:
工序(A),准备结构体,所述结构体具备具有电路形成面的电子部件、以及粘着性层叠膜,上述粘着性层叠膜依次具有基材层、凹凸吸收性树脂层和粘着性树脂层,且上述粘着性树脂层侧粘贴于上述电子部件的上述电路形成面以保护上述电路形成面,
工序(B),在粘贴于上述粘着性层叠膜的状态下,对于上述电子部件形成电磁波屏蔽层。
[2]
根据上述[1]所述的电子装置的制造方法,其在上述工序(A)与上述工序(B)之间,进一步包括下述工序(C):
通过使上述凹凸吸收性树脂层进行交联,从而提高上述凹凸吸收性树脂层的耐热性。
[3]
根据上述[1]或[2]所述的电子装置的制造方法,其在上述工序(B)之后,进一步包括工序(D):
将上述电子部件与上述粘着性层叠膜进行剥离。
[4]
根据上述[3]所述的电子装置的制造方法,
在上述工序(D)中,使上述粘着性层叠膜中的粘贴有上述电子部件的区域在膜的面内方向上扩张,在使相邻的上述电子部件间的间隔扩大的状态下,从上述粘着性层叠膜剥离上述电子部件。
[5]
根据上述[3]或[4]所述的电子装置的制造方法,
上述粘着性树脂层包含放射线交联型粘着剂,
所述电子装置的制造方法在上述工序(D)之前,进一步包括下述工序(E):
对上述粘着性树脂层照射放射线以使上述粘着性树脂层进行交联。
[6]
根据上述[1]~[5]中任一项所述的电子装置的制造方法,
上述电子部件的上述电路形成面包含凸块电极。
[7]
根据上述[6]所述的电子装置的制造方法,
将上述凸块电极的高度设为H[μm],将上述凹凸吸收性树脂层的厚度设为d[μm]时,H/d为0.01以上1以下。
[8]
根据上述[1]~[7]中任一项所述的电子装置的制造方法,
上述凹凸吸收性树脂层的厚度为10μm以上1000μm以下。
[9]
根据上述[1]~[8]中任一项所述的电子装置的制造方法,
在上述工序(B)中,使用选自溅射法、蒸镀法、喷射涂布法、电镀法和化学镀法中的至少一种方法,对于上述电子部件形成上述电磁波屏蔽层。
[10]
根据上述[1]~[9]中任一项所述的电子装置的制造方法,
在上述工序(B)中,至少对于上述电子部件中的与上述电路形成面对置的对置面和将上述电路形成面与上述对置面连接的侧面,形成上述电磁波屏蔽层。
[11]
根据上述[1]~[10]中任一项所述的电子装置的制造方法,
上述凹凸吸收性树脂层包含交联性树脂。
[12]
根据上述[1]~[11]中任一项所述的电子装置的制造方法,
构成上述基材层的树脂包含选自由聚酯系弹性体、聚酰胺系弹性体、聚酰亚胺系弹性体、聚对苯二甲酸丁二醇酯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯和聚酰亚胺所组成的组中的一种或两种以上。
[13]
根据上述[1]~[12]中任一项所述的电子装置的制造方法,
构成上述粘着性树脂层的粘着剂包含选自(甲基)丙烯酸系粘着剂、有机硅系粘着剂、氨基甲酸酯系粘着剂、烯烃系粘着剂和苯乙烯系粘着剂中的一种或两种以上。
发明的效果
根据本发明,能够稳定地获得能抑制电路形成面的电短路、且具有电磁波屏蔽性的电子装置。
附图说明
上述目的和其他目的、特征和优点通过以下所述的优选实施方式和其所附带的以下附图而变得更明确。
图1为表示本发明涉及的电子装置的制造方法的一例的流程图。
图2为表示本发明涉及的电子装置的制造方法的一例的流程图。
图3为表示本发明涉及的电子装置的制造方法的一例的流程图。
图4为示意性表示本发明涉及的实施方式的电子装置的制造方法的一例的截面图。
具体实施方式
以下,对于本发明的实施方式,使用附图来进行说明。另外,在全部附图中,对于同样的构成要素附上共同的符号,适当省略说明。此外,图为概略图,与实际的尺寸比率并不一致。此外,只要没有特别说明,数值范围的“A~B”就表示A以上B以下。此外,在本实施方式中,所谓“(甲基)丙烯酸”,是指丙烯酸、甲基丙烯酸、或者丙烯酸和甲基丙烯酸这两者。
图1~3为表示本发明涉及的电子装置的制造方法的一例的流程图。图4为示意性表示本发明涉及的实施方式的电子装置的制造方法的一例的截面图。
本实施方式涉及的电子装置的制造方法至少具备以下2个工序。
工序(A),准备结构体60,所述结构体60具备具有电路形成面10A的电子部件10、以及粘着性层叠膜50,所述粘着性层叠膜50依次具有基材层20、凹凸吸收性树脂层30和粘着性树脂层40,且粘着性树脂层40侧粘贴于电子部件10的电路形成面10A以保护电路形成面10A,
工序(B),在粘贴于粘着性层叠膜50的状态下,对于电子部件10形成电磁波屏蔽层70。
如上述那样,根据本发明人等的研究,发现了以下课题:在将电子部件的电路形成面用保护膜进行保护的状态下在电子部件的表面形成电磁波屏蔽层时,用于形成电磁波屏蔽层的导电性成分进入电子部件的电路形成面而附着于电路,其结果有时电路会发生电短路。此外,电路形成面的凹凸越大,则构成电路形成面的电路越易于电短路。特别是在使用电子部件的电路形成面上形成有凸块电极的电子部件的情况下,存在构成电路形成面的电路易于电短路的倾向。
即,本发明人等发现在具有电磁波屏蔽性的电子装置的制造方法中,从一边抑制电子部件的电路形成面的电短路,一边对于电子部件赋予电磁波屏蔽性这样的观点来看,存在改善的余地。
本发明人等为了实现上述课题而反复进行了深入研究。其结果认识到在电子部件与保护膜之间的密合性不充分的情况下,用于形成电磁波屏蔽层的导电性成分易于进入电子部件的电路形成面,易于引起电路的导通不良。
特别是在使用电路形成面形成有凸块电极等较大凹凸的电子部件的情况下,保护膜对于电子部件的电路形成面的凹凸的追随性易于变得不充分,因此电子部件与保护膜之间的密合性易于变得不充分。其结果认识到用于形成电磁波屏蔽层的导电性成分易于浸入至电子部件的电路形成面,易于引起构成电路形成面的电路的导通不良。
本发明人等基于上述认识进一步反复进行了研究。其结果发现了通过使用依次具有基材层20、凹凸吸收性树脂层30和粘着性树脂层40的粘着性层叠膜50作为保护电子部件10的电路形成面10A的膜,能够稳定地获得能抑制电路形成面10A的电短路、且具有电磁波屏蔽性的电子装置。
粘着性层叠膜50通过具有凹凸吸收性树脂层30,从而粘着性层叠膜50易于追随电子部件10的电路形成面10A,能够使粘着性层叠膜50与电子部件10的电路形成面10A之间的密合性变得良好。由此,在电子部件10的表面形成电磁波屏蔽层70时,能够抑制用于形成电磁波屏蔽层70的导电性成分进入至电子部件10的电路形成面10A,其结果是能够抑制构成电路形成面10A的电路的电短路。
如以上那样,根据本实施方式涉及的电子装置的制造方法,能够稳定地获得能抑制电路形成面的电短路、且具有电磁波屏蔽性的电子装置。
1.粘着性层叠膜
以下,对于本实施方式涉及的电子装置的制造方法所使用的粘着性层叠膜50进行说明。
<基材层>
基材层20为以使粘着性层叠膜50的操作性、机械特性、耐热性等特性变得更良好为目的而设置的层。
基材层20没有特别限定,可举出例如,树脂膜。
作为构成基材层20的树脂,能够使用公知的热塑性树脂。可举出例如,选自聚乙烯、聚丙烯、聚(4-甲基-1-戊烯)、聚(1-丁烯)等聚烯烃;聚对苯二甲酸乙二醇酯、聚对苯二甲酸丁二醇酯、聚萘二甲酸乙二醇酯等聚酯;尼龙-6、尼龙-66、聚己二酰间苯二甲胺等聚酰胺;聚丙烯酸酯;聚甲基丙烯酸酯;聚氯乙烯;聚酰亚胺;聚醚酰亚胺;聚酰胺酰亚胺;乙烯-乙酸乙烯酯共聚物;聚丙烯腈;聚碳酸酯;聚苯乙烯;离子交联聚合物;聚砜;聚醚砜;聚醚醚酮;聚苯硫醚;聚苯醚;聚酯系弹性体、聚酰胺系弹性体、聚酰亚胺系弹性体、聚对苯二甲酸丁二醇酯等弹性体等中的一种或两种以上。
其中,从使透明性变得良好的观点考虑,优选为选自聚丙烯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、聚酰胺、聚酰亚胺、乙烯-乙酸乙烯酯共聚物、聚酯系弹性体、聚酰胺系弹性体、聚酰亚胺系弹性体和聚对苯二甲酸丁二醇酯中的一种或两种以上,更优选为选自聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、聚酯系弹性体、聚酰胺系弹性体、聚酰亚胺系弹性体、聚对苯二甲酸丁二醇酯和聚酰亚胺中的一种或两种以上。
此外,从提高粘着性层叠膜50的柔软性、伸缩性等特性与耐热性的平衡的观点考虑,作为构成基材层20的树脂,进一步优选为选自聚酯系弹性体、聚酰胺系弹性体、聚酰亚胺系弹性体和聚对苯二甲酸丁二醇酯等中的一种或两种以上。由此,粘着性层叠膜50的伸缩性、柔软性提高,在工序(B)之后将电子部件10与粘着性层叠膜50进行剥离时变得更易于使粘着性层叠膜50在面内方向上扩张,变得易于从粘着性层叠膜50剥离电子部件10。
基材层20的熔点优选为100℃以上,更优选为120℃以上。熔点上限没有特别限定,鉴于加工性等而选择即可,从使工序(D)中的粘着性层叠膜50的扩张性变得良好的观点考虑,可以为300℃以下,此外可以为250℃以下。
如果使用这样的基材层20,则即使在工序(B)中粘着性层叠膜50暴露于高温,也能够进一步抑制粘着性层叠膜50的变形、熔融。
基材层20可以为单层,也可以为两个以上的层。
此外,作为用于形成基材层20的树脂膜的形态,可以为拉伸膜,也可以为在单轴方向或双轴方向上拉伸的膜。
从获得良好的膜特性的观点考虑,基材层20的厚度优选为10μm以上500μm以下,更优选为20μm以上300μm以下,进一步优选为25μm以上250μm以下。
对于基材层20,也可以进行表面处理以改良与其他层的粘接性。具体而言,可以进行电晕处理、等离子体处理、底涂(undercoat)处理、下涂(primer coat)处理等。
<凹凸吸收性树脂层>
凹凸吸收性树脂层30是以使粘着性层叠膜50对于电路形成面10A的追随性变得良好,从而使电路形成面10A与粘着性层叠膜50的密合性变得良好为目的而设置的层。
通过具备凹凸吸收性树脂层30,从而粘着性层叠膜50整体的凹凸吸收性提高,追随电子部件10的电路形成面10A的凹凸,能够提高电子部件10的电路形成面10A与粘着性层叠膜50的密合性。由此,易于追随电子部件10的电路形成面10A的凹凸,能够使粘着性层叠膜50与电子部件10的电路形成面10A之间的间隙变得更小,在电子部件10的表面形成电磁波屏蔽层70时,能够抑制用于形成电磁波屏蔽层70的导电性成分进入至电子部件10的电路形成面10A。
构成凹凸吸收性树脂层30的树脂只要显示凹凸吸收性,就没有特别限定,可举出例如,选自由聚烯烃系树脂、聚苯乙烯系树脂和(甲基)丙烯酸系树脂所组成的组中的一种或两种以上。
此外,凹凸吸收性树脂层30优选包含交联性树脂。通过凹凸吸收性树脂层30包含交联性树脂,从而能够在工序(B)之前将凹凸吸收性树脂层30进行交联而提高耐热性,其结果是即使在工序(B)中粘着性层叠膜50暴露于高温,也能够进一步抑制粘着性层叠膜50的变形、熔融。
作为本实施方式涉及的交联性树脂,只要是能够形成凹凸吸收性树脂层30,且通过热、光等外部刺激进行交联从而耐热性提高的树脂,就没有特别限定,能够使用例如,选自包含乙烯和碳原子数3~20的α-烯烃的乙烯-α-烯烃共聚物、高密度乙烯系树脂、低密度乙烯系树脂、中密度乙烯系树脂、超低密度乙烯系树脂、直链状低密度聚乙烯(LLDPE)系树脂、丙烯(共)聚合物、1-丁烯(共)聚合物、4-甲基-1-戊烯(共)聚合物、乙烯-环状烯烃共聚物、乙烯-α-烯烃-环状烯烃共聚物、乙烯-α-烯烃-非共轭多烯共聚物、乙烯-α-烯烃-共轭多烯共聚物、乙烯-芳香族乙烯基共聚物、乙烯-α-烯烃-芳香族乙烯基共聚物等烯烃系树脂;乙烯-不饱和羧酸酐共聚物、乙烯-α-烯烃-不饱和羧酸酐共聚物等乙烯-羧酸酐系共聚物;乙烯-含环氧基不饱和化合物共聚物、乙烯-α-烯烃-含环氧基不饱和化合物共聚物等乙烯-环氧系共聚物;乙烯-(甲基)丙烯酸乙酯共聚物、乙烯-(甲基)丙烯酸甲酯共聚物、乙烯-(甲基)丙烯酸丙酯共聚物、乙烯-(甲基)丙烯酸丁酯共聚物、乙烯-(甲基)丙烯酸己酯共聚物、乙烯-(甲基)丙烯酸-2-羟基乙酯共聚物、乙烯-(甲基)丙烯酸-2-羟基丙酯共聚物、乙烯-(甲基)丙烯酸缩水甘油酯共聚物等乙烯-(甲基)丙烯酸酯共聚物;乙烯-(甲基)丙烯酸共聚物、乙烯-马来酸共聚物、乙烯-富马酸共聚物、乙烯-巴豆酸共聚物等乙烯-烯属不饱和酸共聚物;乙烯-乙酸乙烯酯共聚物、乙烯-丙酸乙烯酯共聚物、乙烯-丁酸乙烯酯共聚物、乙烯-硬脂酸乙烯酯共聚物等乙烯-乙烯基酯共聚物;乙烯-苯乙烯共聚物等;(甲基)丙烯酸酯(共)聚合物等不饱和羧酸酯(共)聚合物;乙烯-丙烯酸金属盐共聚物、乙烯-甲基丙烯酸金属盐共聚物等离子交联聚合物树脂;氨基甲酸酯系树脂;有机硅系树脂;丙烯酸系树脂;甲基丙烯酸系树脂;环状烯烃(共)聚合物;α-烯烃-芳香族乙烯基化合物-芳香族多烯共聚物;乙烯-α-烯烃-芳香族乙烯基化合物;芳香族多烯共聚物;乙烯-芳香族乙烯基化合物-芳香族多烯共聚物;苯乙烯系树脂;丙烯腈-丁二烯-苯乙烯共聚物;苯乙烯-共轭二烯共聚物;丙烯腈-苯乙烯共聚物;丙烯腈-乙烯-α-烯烃-非共轭多烯-苯乙烯共聚物;丙烯腈-乙烯-α-烯烃-共轭多烯-苯乙烯共聚物;甲基丙烯酸-苯乙烯共聚物;对苯二甲酸乙二醇酯树脂;氟树脂;聚酯碳酸酯;聚氯乙烯;聚偏氯乙烯;聚烯烃系热塑性弹性体;聚苯乙烯系热塑性弹性体;聚氨酯系热塑性弹性体;1,2-聚丁二烯系热塑性弹性体;反式聚异戊二烯系热塑性弹性体;氯化聚乙烯系热塑性弹性体;液晶性聚酯;聚乳酸等中的一种或两种以上。
其中,从易于通过有机过氧化物等交联剂进行交联的观点考虑,优选使用选自由乙烯和碳原子数3~20的α-烯烃构成的乙烯-α-烯烃共聚物、低密度乙烯系树脂、中密度乙烯系树脂、超低密度乙烯系树脂、直链状低密度聚乙烯(LLDPE)系树脂、乙烯-环状烯烃共聚物、乙烯-α-烯烃-环状烯烃共聚物、乙烯-α-烯烃-非共轭多烯共聚物、乙烯-α-烯烃-共轭多烯共聚物、乙烯-芳香族乙烯基共聚物、乙烯-α-烯烃-芳香族乙烯基共聚物等烯烃系树脂;乙烯-不饱和羧酸酐共聚物、乙烯-α-烯烃-不饱和羧酸酐共聚物、乙烯-含环氧基不饱和化合物共聚物、乙烯-α-烯烃-含环氧基不饱和化合物共聚物、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-甲基丙烯酸共聚物等乙烯-不饱和羧酸共聚物、1,2-聚丁二烯系热塑性弹性体中的一种或两种以上。
更优选使用选自由乙烯和碳原子数3~20的α-烯烃构成的乙烯-α-烯烃共聚物、低密度乙烯系树脂、超低密度乙烯系树脂、直链状低密度聚乙烯(LLDPE)系树脂、乙烯-α-烯烃-非共轭多烯共聚物、乙烯-α-烯烃-共轭多烯共聚物、乙烯-不饱和羧酸酐共聚物、乙烯-α-烯烃-不饱和羧酸酐共聚物、乙烯-含环氧基不饱和化合物共聚物、乙烯-α-烯烃-含环氧基不饱和化合物共聚物、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-甲基丙烯酸共聚物等乙烯-不饱和羧酸共聚物中的一种或两种以上。
进一步优选使用选自由乙烯和碳原子数3~20的α-烯烃构成的乙烯-α-烯烃共聚物、低密度乙烯系树脂、超低密度乙烯系树脂、直链状低密度聚乙烯(LLDPE)系树脂、乙烯-α-烯烃-非共轭多烯共聚物、乙烯-α-烯烃-共轭多烯共聚物、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-甲基丙烯酸共聚物等乙烯-不饱和羧酸共聚物中的一种或两种以上。
其中,特别优选使用选自乙烯-α-烯烃共聚物和乙烯-乙酸乙烯酯共聚物中的至少一种。另外,本实施方式中,上述树脂可以单独使用,也可以掺混使用。
作为本实施方式中的交联性树脂所使用的由乙烯和碳原子数3~20的α-烯烃构成的乙烯-α-烯烃共聚物的α-烯烃,通常能够单独使用1种碳原子数3~20的α-烯烃或组合使用2种以上。其中优选为碳原子数10以下的α-烯烃,特别优选为碳原子数3~8的α-烯烃。作为这样的α-烯烃,可举出例如,丙烯、1-丁烯、1-戊烯、1-己烯、3-甲基-1-丁烯、3,3-二甲基-1-丁烯、4-甲基-1-戊烯、1-辛烯、1-癸烯、1-十二碳烯等。其中,从获得的容易性考虑,优选为丙烯、1-丁烯、1-戊烯、1-己烯、4-甲基-1-戊烯和1-辛烯。另外,乙烯-α-烯烃共聚物可以为无规共聚物,也可以为嵌段共聚物,但从柔软性的观点考虑,优选为无规共聚物。
凹凸吸收性树脂层30的厚度只要是能够将电子部件10的电路形成面10A的凹凸埋入的厚度,就没有特别限制,例如,优选为10μm以上1000μm以下,更优选为20μm以上900μm以下,进一步优选为30μm以上800μm以下,特别优选为50μm以上700μm以下。
这里,在电子部件的电路形成面包含凸块电极的情况下,存在当在电子部件的表面形成电磁波屏蔽层时,构成电路形成面的电路易于电短路的倾向。然而,通过使用本实施方式涉及的粘着性层叠膜50,从而对于电路形成面10A包含凸块电极的电子部件10也能够抑制电短路。
此外,将电子部件10的电路形成面10A所存在的凸块电极的高度设为H[μm],将凹凸吸收性树脂层30的厚度设为d[μm]时,H/d优选为1以下,更优选为0.85以下,进一步优选为0.7以下。如果H/d为上述上限值以下,则能够使粘着性层叠膜50的厚度更薄的同时,使凹凸吸收性更良好。
H/d的下限没有特别限定,例如为0.01以上,优选为0.1以上,进一步优选为0.3以上。凸块电极的高度一般而言为2μm以上600μm以下。
这里,根据本发明人等的研究,明确了电路形成面的凹凸越大,则构成电路形成面的电路越易于电短路。因此,凸块电极的高度优选为10μm以上,更优选为30μm以上,进一步优选为50μm以上,进一步更优选为80μm以上,特别优选为100μm以上时,能够更有效地获得本实施方式涉及的电子装置的制造方法的效果。
<粘着性树脂层>
粘着性树脂层40为设置于凹凸吸收性树脂层30的一面侧的层,为将粘着性层叠膜50粘贴于电子部件10的电路形成面10A时,与电子部件10的电路形成面10A接触而粘着的层。
构成粘着性树脂层40的粘着剂可举出(甲基)丙烯酸系粘着剂、有机硅系粘着剂、氨基甲酸酯系粘着剂、烯烃系粘着剂、苯乙烯系粘着剂等。其中,从能够容易地调整粘接力方面等考虑,优选为将(甲基)丙烯酸系聚合物作为基础聚合物的(甲基)丙烯酸系粘着剂。
此外,作为构成粘着性树脂层40的粘着剂,还能够使用通过放射线使粘着力降低的放射线交联型粘着剂。由放射线交联型粘着剂构成的粘着性树脂层40通过放射线的照射而交联,粘着力显著地减少,因此在后述的将电子部件10与粘着性层叠膜50进行剥离的工序(D)中,易于从粘着性树脂层40剥离电子部件10。作为放射线,可举出紫外线、电子射线、红外线等。
作为放射线交联型粘着剂,优选为紫外线交联型粘着剂。
作为(甲基)丙烯酸系粘着剂所包含的(甲基)丙烯酸系聚合物,可举出例如,(甲基)丙烯酸酯化合物的均聚物、(甲基)丙烯酸酯化合物与共聚单体的共聚物等。作为(甲基)丙烯酸酯化合物,可举出例如,(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸羟基乙酯、(甲基)丙烯酸羟基丙酯、(甲基)丙烯酸二甲基氨基乙酯、(甲基)丙烯酸缩水甘油酯等。这些(甲基)丙烯酸酯化合物可以单独使用一种,也可以并用使用两种以上。
此外,作为构成(甲基)丙烯酸系共聚物的共聚单体,可举出例如,乙酸乙烯酯、(甲基)丙烯腈、苯乙烯、(甲基)丙烯酸、衣康酸、(甲基)丙烯酰胺、羟甲基(甲基)丙烯酰胺、马来酸酐等。这些共聚单体可以单独使用一种,也可以并用使用两种以上。
放射线交联型粘着剂包含例如上述(甲基)丙烯酸系聚合物,交联性化合物(具有碳-碳双键的成分)以及光聚合引发剂或热聚合引发剂。
作为交联性化合物,可举出例如,分子中具有碳-碳双键,通过自由基聚合能够交联的单体、低聚物或聚合物等。作为这样的交联性化合物,可举出例如,三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、四甘醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯等(甲基)丙烯酸与多元醇的酯;酯(甲基)丙烯酸酯低聚物;2-丙烯基二(3-丁烯基)氰脲酸酯、2-羟基乙基双(2-(甲基)丙烯酰氧基乙基)异氰脲酸酯、三(2-甲基丙烯酰氧基乙基)异氰脲酸酯等异氰脲酸酯或异氰脲酸酯化合物等。
另外,在(甲基)丙烯酸系聚合物为在聚合物的侧链具有碳-碳双键的放射线交联型聚合物的情况下,可以不添加交联性化合物。
交联性化合物的含量相对于(甲基)丙烯酸系聚合物100质量份优选为5~900质量份,更优选为5~100质量份,进一步优选为10~50质量份。由于交联性化合物的含量在上述范围内,因此与少于上述范围的情况相比,变得易于调整粘着力,与多于上述范围的情况相比,变得不易引起因对于热、光的灵敏度过高而导致的保存稳定性的降低。
作为光聚合引发剂,只要是通过照射放射线而开裂,生成自由基的化合物即可,可举出例如,苯偶姻甲基醚、苯偶姻异丙基醚、苯偶姻异丁基醚等苯偶姻烷基醚类;苯偶酰、苯偶姻、二苯甲酮、α-羟基环己基苯基酮等芳香族酮类;苯偶酰二甲基缩酮等芳香族缩酮类;聚乙烯基二苯甲酮;氯噻吨酮、十二烷基噻吨酮、二甲基噻吨酮、二乙基噻吨酮等噻吨酮类等。
作为热聚合引发剂,可举出例如,有机过氧化物衍生物、偶氮系聚合引发剂等。从加热时不产生氮这一点考虑,优选为有机过氧化物衍生物。作为热聚合引发剂,可举出例如,过氧化酮、过氧缩酮、过氧化氢、二烷基过氧化物、二酰基过氧化物、过氧化酯和过氧化二碳酸酯等。
粘着剂中可以添加交联剂。作为交联剂,可举出例如,山梨糖醇聚缩水甘油醚、聚甘油聚缩水甘油醚、季戊四醇聚缩水甘油醚、二甘油聚缩水甘油醚等环氧系化合物;四羟甲基甲烷-三(β-吖丙啶基丙酸酯)、三羟甲基丙烷-三(β-吖丙啶基丙酸酯)、N,N’-二苯基甲烷-4,4’-双(1-吖丙啶甲酰胺)、N,N’-六亚甲基-1,6-双(1-吖丙啶甲酰胺)等吖丙啶系化合物;四亚甲基二异氰酸酯、六亚甲基二异氰酸酯、多异氰酸酯等异氰酸酯系化合物等。
从提高粘着性树脂层40的耐热性与密合力的平衡的观点考虑,交联剂的含量相对于(甲基)丙烯酸系聚合物100质量份,优选为0.1质量份以上10质量份以下。
粘着性树脂层40的厚度没有特别限制,优选为例如,1μm以上100μm以下,更优选为3μm以上50μm以下。
粘着性树脂层40例如,能够通过在凹凸吸收性树脂层30上涂布粘着剂涂布液来形成。
作为涂布粘着剂涂布液的方法,能够采用以往公知的涂布方法,例如,辊式涂布法、逆辊涂布法、凹版辊法、棒涂法、缺角轮涂布法、模涂法等。所涂布的粘着剂的干燥条件没有特别限制,一般而言,优选在80~200℃的温度范围内,干燥10秒~10分钟。进一步优选在80~170℃,干燥15秒~5分钟。为了充分促进交联剂与粘着剂的交联反应,可以在粘着剂涂布液的干燥结束之后,在40~80℃加热5~300小时左右。
本实施方式涉及的粘着性层叠膜50的全光线透射率优选为85%以上,更优选为90%以上。通过这样操作,从而能够对于粘着性层叠膜50赋予透明性。而且,通过使粘着性层叠膜50的全光线透射率为上述下限值以上,从而对于本实施方式涉及的粘着性层叠膜50从基材层20侧照射放射线时,能够使放射线更有效地照射到粘着性树脂层40,能够提高放射线照射效率。另外,粘着性层叠膜50的全光线透射率能够按照JIS K7105(1981)来测定。
从机械特性和操作性的平衡考虑,本实施方式涉及的粘着性层叠膜50整体的厚度优选为25μm以上1100μm以下,更优选为100μm以上900μm以下,进一步优选为200μm以上800μm以下。
本实施方式涉及的粘着性层叠膜50可以在各层之间设置粘接层(未图示)。通过该粘接层,能够提高各层之间的粘接性。
接下来,对于本实施方式涉及的粘着性层叠膜50的制造方法的一例进行说明。
首先,通过挤出层压法在基材层20的一个面上形成凹凸吸收性树脂层30。接着,通过在凹凸吸收性树脂层30上涂布粘着剂涂布液并使其干燥,从而形成粘着性树脂层40,获得粘着性层叠膜50。
此外,基材层20与凹凸吸收性树脂层30可以通过共挤出成型来形成,也可以将膜状的基材层20与膜状的凹凸吸收性树脂层30进行层压(层叠)来形成。
2.电子装置的制造方法
接下来,对于本实施方式涉及的电子装置的制造方法的各工序进行说明。
(工序(A))
首先,准备结构体60,所述结构体60具备具有电路形成面10A的电子部件10、以及粘着性层叠膜50,所述粘着性层叠膜50依次具有基材层20、凹凸吸收性树脂层30和粘着性树脂层40,且粘着性树脂层40侧粘贴于电子部件10的电路形成面10A以保护电路形成面10。
这样的结构体60例如能够通过在粘着性层叠膜50的粘着性树脂层40上,粘贴具有电路形成面10A的电子部件10来制作。粘贴于粘着性层叠膜50的粘着性树脂层40上的电子部件10可以为一个,也可以为两个以上。
以下,对于结构体60的制造方法进行说明。
首先,在粘着性层叠膜50的粘着性树脂层40上粘贴电子部件10。
作为粘贴于粘着性层叠膜50的电子部件10,只要是具有电路形成面,且要求电磁波屏蔽性的电子部件,就没有特别限定,可举出例如,半导体芯片、半导体面板、半导体封装、半导体晶片、模塑晶片、模塑面板、模塑阵列封装、半导体基板等。
此外,作为半导体基板,可举出例如,硅基板、蓝宝石基板、锗基板、锗-砷基板、镓-磷基板、镓-砷-铝基板、镓-砷基板、钽酸锂基板等。
此外,电子部件10可以为任何用途的电子部件,可举出例如,逻辑用(例如,通信用、高频信号处理用等)、存储器用、传感器用、电源用的电子部件等。它们可以仅使用1种,也可以并用2种以上。
电子部件10的电路形成面10A例如,通过具有电极10B而成为凹凸面。
此外,电极10B是在将电子装置安装于安装面时,与形成于安装面的电极接合,形成电子装置与安装面(印刷基板等的安装面)之间的电连接的电极。
作为电极10B,可举出例如,球形凸块、印刷凸块、钉形凸块、镀覆凸块、柱形凸块等凸块电极。即,电极10B通常为凸电极。这些凸块电极可以单独使用1种,也可以并用2种以上。
此外,构成凸块电极的金属种类没有特别限定,可举出例如,银、金、铜、锡、铅、铋和它们的合金等。这些金属种类可以单独使用1种,也可以并用2种以上。
在结构体60的准备中,能够粘贴被单片化了的一个或两个以上电子部件10来制作,可以根据需要切割粘着性层叠膜50上的电子部件10,将电子部件10分割成2个以上。
电子部件10的切割能够使用切割刀(切割锯)、激光等利用公知的方法来进行。
这里所谓“切割”,包括:
(a)通过对于电子部件10,设置与该电子部件10的厚度相同深度的切口,从而分割电子部件10,获得多个被分割的电子部件10的操作(以下,也称为“全切割”。),以及
(b)通过照射激光,对于电子部件10设置不至于使电子部件10切断的变质区域,获得多个电子部件10的操作(以下,也称为“隐形切割”。)。在隐形切割的情况下,通过激光照射后的粘着性层叠膜50的扩张来分割电子部件10,获得多个被分割的电子部件10。
(工序(B))
接下来,在粘贴于粘着性层叠膜50的状态下,对于电子部件10形成电磁波屏蔽层70。
工序(B)中,例如,如图4(B)所示那样,对于电子部件10中的与电路形成面10A对置的对置面和将电路形成面10A与对置面连接的侧面,形成电磁波屏蔽层70。
作为对于电子部件10形成电磁波屏蔽层70的方法,没有特别限定,能够使用公知的方法。可举出例如,溅射法、蒸镀法、喷射涂布法、电镀法和化学镀法等。
作为溅射法,可举出例如,DC溅射法、RF溅射法、磁控管溅射法、离子束溅射法、反应性溅射法等。它们可以仅使用1种,也可以并用2种以上。
作为蒸镀法,可举出例如,真空蒸镀法、化学气相沉积法(CVD法)等。它们可以仅使用1种,也可以并用2种以上。
作为真空蒸镀法,可举出例如,分子束外延法(MBE法)、物理气相沉积法(PVD法)等。它们可以仅使用1种,也可以并用2种以上。
作为CVD法,可举出例如,热CVD法、催化剂CVD法、光CVD法、等离子体CVD法、激光CVD法、外延CVD法、原子层CVD法、有机金属CVD法、氯化物CVD法等。它们可以仅使用1种,也可以并用2种以上。
这些各种干式成膜法中,从能够将负荷温度抑制得比较低这样的观点出发,优选为磁控管溅射法、等离子体CVD等。
构成电磁波屏蔽层70的材料优选为导电性。具体而言,优选具有20℃时的电阻率为10000μΩ·cm以下的导电性。该电阻率更优选为200μΩ·cm以下,特别优选为100μΩ·cm以下。
构成电磁波屏蔽层70的导电性成分没有特别限定,优选为金属,能够使用例如,Mg、Al、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Nb、Mo、Ru、Rh、Pd、Ag、In、Sn、Sb、W、Re、Ir、Pt、Au、Bi等金属,包含选自这些金属中的2种以上金属的合金,氧化物(ITO(In2O3-SnO2),ATO(SnO2-Sb),FTO(SnO2-F)等)等。它们可以仅使用1种,也可以并用2种以上。
其中,优选为包含Au、Pt、Ag、Cu、Ni、Al和Fe中的1种或2种以上的金属膜、ITO膜、ATO膜。
电磁波屏蔽层70的膜厚只要能够发挥屏蔽特性即可,没有特别限定,优选为100μm以下,更优选为50μm以下。另一方面,最薄膜厚没有特别限定,优选为0.5μm以上。
(工序(C))
在上述工序(B)中形成电磁波屏蔽层70时,有时通过溅射法、蒸镀法,粘着性层叠膜50被加热至高温。此外,在电镀法、化学镀法中,有时通过将电磁波屏蔽层70进行退火的后工序,粘着性层叠膜50仍然被暴露于高温。因此,在本实施方式涉及的电子装置的制造方法中,如图2所示那样,优选在工序(A)与工序(B)之间,进一步包括工序(C):通过使凹凸吸收性树脂层30进行交联,从而提高凹凸吸收性树脂层30的耐热性。由此,即使在工序(B)中粘着性层叠膜50被暴露于高温下,也能够进一步抑制粘着性层叠膜50的变形、熔融。
作为凹凸吸收性树脂层30的交联方法,只要是能够将交联性树脂进行交联的方法,就没有特别限定,可举出利用自由基聚合引发剂进行的交联;利用硫、硫系化合物进行的交联;利用紫外线、电子射线、γ射线等放射线进行的交联等交联方法。
利用自由基聚合引发剂进行的交联中,能够使用交联性树脂的交联所使用的自由基聚合引发剂。作为自由基聚合引发剂,能够使用公知的热自由基聚合引发剂、光自由基聚合引发剂以及它们的组合。
在使用硫、硫系化合物将凹凸吸收性树脂层30进行交联的情况下,可以在凹凸吸收性树脂层30中配合硫化促进剂,硫化促进助剂等来进行交联。
此外,任一交联方法中,都可以在凹凸吸收性树脂层30中配合交联助剂,进行凹凸吸收性树脂层30的交联。
(工序(D))
此外,在本实施方式涉及的电子装置的制造方法中,如图3所示那样,可以在工序(B)之后进一步进行工序(D):将电子部件10与粘着性层叠膜50进行剥离。通过进行该工序(D),能够从粘着性层叠膜50剥离电子部件10。
电子部件10与粘着性层叠膜50的剥离能够通过公知的方法来进行。
工序(D)中,优选使粘着性层叠膜50中的粘贴有电子部件10的区域在膜的面内方向上扩张,在使相邻的电子部件10间的间隔扩大的状态下,从粘着性层叠膜50剥离电子部件10。
通过这样操作,相邻的电子部件10间的间隔扩大,因此变得易于从粘着性层叠膜50剥离电子部件10。进一步,通过由于粘着性树脂层40在面内方向上扩张而产生的电子部件10与粘着性树脂层40的剪切应力,电子部件10与粘着性树脂层40的粘着力降低,因此变得易于从粘着性层叠膜50剥离电子部件10。
(工序(E))
本实施方式涉及的电子装置的制造方法中,可以在工序(D)之前进一步进行工序(E):对于粘着性树脂层40照射放射线,使粘着性树脂层40进行交联,从而降低粘着性树脂层40对电子部件10的粘着力。
通过进行工序(E),从而变得易于从粘着性树脂层40容易地剥离电子部件10。此外,能够抑制因构成粘着性树脂层40的粘着成分而导致电子部件10的表面被污染。
放射线例如,从粘着性层叠膜50的与粘着性树脂层40侧的面相反一侧的面来照射。
(其他工序)
本实施方式涉及的电子装置的制造方法可以具有上述以外的其他工序。作为其他工序,能够使用电子装置的制造方法中公知的工序。
例如,可以在进行工序(D)之后,进一步进行将所得的电子部件10安装于安装基板(印刷基板等)的工序;在引线接合工序、密封工序等电子部件的制造工序中通常所进行的任意工序等。
以上,对于本发明的实施方式进行了描述,但它们是本发明的例示,还能够采用上述以外的各种构成。
另外,本发明不限定于上述实施方式,在能够实现本发明的目的的范围内的变形、改良等也包含于本发明中。
本申请主张以2017年7月20日申请的日本申请特愿2017-141003号作为基础的优先权,将其公开的全部内容并入本文中。
Claims (13)
1.一种电子装置的制造方法,其包括下述工序:
工序(A),准备结构体,所述结构体具备具有电路形成面的电子部件、以及粘着性层叠膜,所述粘着性层叠膜依次具有基材层、凹凸吸收性树脂层和粘着性树脂层,且所述粘着性树脂层侧粘贴于所述电子部件的所述电路形成面以保护所述电路形成面;
工序(B),在粘贴于所述粘着性层叠膜的状态下,对于所述电子部件形成电磁波屏蔽层。
2.根据权利要求1所述的电子装置的制造方法,其在所述工序(A)与所述工序(B)之间,进一步包括下述工序(C):
通过使所述凹凸吸收性树脂层进行交联,从而提高所述凹凸吸收性树脂层的耐热性。
3.根据权利要求1或2所述的电子装置的制造方法,其在所述工序(B)之后,进一步包括下述工序(D):
将所述电子部件与所述粘着性层叠膜进行剥离。
4.根据权利要求3所述的电子装置的制造方法,
在所述工序(D)中,使所述粘着性层叠膜中的粘贴有所述电子部件的区域在膜的面内方向上扩张,在使相邻的所述电子部件间的间隔扩大的状态下,从所述粘着性层叠膜剥离所述电子部件。
5.根据权利要求3或4所述的电子装置的制造方法,
所述粘着性树脂层包含放射线交联型粘着剂,
所述电子装置的制造方法在所述工序(D)之前,进一步包括下述工序(E):
对所述粘着性树脂层照射放射线以使所述粘着性树脂层进行交联。
6.根据权利要求1~5中任一项所述的电子装置的制造方法,
所述电子部件的所述电路形成面包含凸块电极。
7.根据权利要求6所述的电子装置的制造方法,
将所述凸块电极的高度设为H[μm],将所述凹凸吸收性树脂层的厚度设为d[μm]时,H/d为0.01以上1以下。
8.根据权利要求1~7中任一项所述的电子装置的制造方法,
所述凹凸吸收性树脂层的厚度为10μm以上1000μm以下。
9.根据权利要求1~8中任一项所述的电子装置的制造方法,
在所述工序(B)中,使用选自溅射法、蒸镀法、喷射涂布法、电镀法和化学镀法中的至少一种方法,对于所述电子部件形成所述电磁波屏蔽层。
10.根据权利要求1~9中任一项所述的电子装置的制造方法,
在所述工序(B)中,至少对于所述电子部件中的与所述电路形成面对置的对置面和将所述电路形成面与所述对置面连接的侧面,形成所述电磁波屏蔽层。
11.根据权利要求1~10中任一项所述的电子装置的制造方法,
所述凹凸吸收性树脂层包含交联性树脂。
12.根据权利要求1~11中任一项所述的电子装置的制造方法,
构成所述基材层的树脂包含选自由聚酯系弹性体、聚酰胺系弹性体、聚酰亚胺系弹性体、聚对苯二甲酸丁二醇酯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯和聚酰亚胺所组成的组中的一种或两种以上。
13.根据权利要求1~12中任一项所述的电子装置的制造方法,
构成所述粘着性树脂层的粘着剂包含选自(甲基)丙烯酸系粘着剂、有机硅系粘着剂、氨基甲酸酯系粘着剂、烯烃系粘着剂和苯乙烯系粘着剂中的一种或两种以上。
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- 2018-07-09 KR KR1020207001286A patent/KR20200019958A/ko not_active Application Discontinuation
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- 2018-07-09 CN CN201880047322.8A patent/CN110914957A/zh active Pending
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JP2011151372A (ja) * | 2009-12-25 | 2011-08-04 | Murata Mfg Co Ltd | 電子部品モジュールの製造方法及び電子部品モジュール |
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EP3657532A4 (en) | 2021-04-21 |
TWI787304B (zh) | 2022-12-21 |
JPWO2019017225A1 (ja) | 2020-03-26 |
SG11202000341VA (en) | 2020-02-27 |
US11462482B2 (en) | 2022-10-04 |
US20200219823A1 (en) | 2020-07-09 |
TW201909378A (zh) | 2019-03-01 |
JP6893558B2 (ja) | 2021-06-23 |
KR20200019958A (ko) | 2020-02-25 |
WO2019017225A1 (ja) | 2019-01-24 |
EP3657532A1 (en) | 2020-05-27 |
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