JPWO2017006549A1 - 半導体ウエハ表面保護フィルムおよび半導体装置の製造方法 - Google Patents
半導体ウエハ表面保護フィルムおよび半導体装置の製造方法 Download PDFInfo
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- JPWO2017006549A1 JPWO2017006549A1 JP2017527075A JP2017527075A JPWO2017006549A1 JP WO2017006549 A1 JPWO2017006549 A1 JP WO2017006549A1 JP 2017527075 A JP2017527075 A JP 2017527075A JP 2017527075 A JP2017527075 A JP 2017527075A JP WO2017006549 A1 JPWO2017006549 A1 JP WO2017006549A1
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Abstract
Description
[2] 前記G’cminは、前記G’bminよりも大きい、[1]に記載の半導体ウエハ表面保護フィルム。
[3] 前記G’b250は、前記G’bminよりも大きい、[1]又は[2]に記載の半導体ウエハ表面保護フィルム。
[4] 前記G’cminが0.03MPa以上3MPa未満であり、かつ250℃における前記粘着性表層Cの貯蔵弾性率G’c250が0.1MPa以上である、[1]〜[3]のいずれかに記載の半導体ウエハ表面保護フィルム。
[5] 前記粘着性吸収層Bの厚さTbが10μm以上600μm以下であり、かつ前記粘着性表層Cの厚さTcが、1μm以上50μm以下である、[1]〜[4]のいずれかに記載の半導体ウエハ表面保護フィルム。
[6] 前記熱硬化性樹脂b1は、熱重合性二重結合、エポキシ基又はアジリジニル基を含む熱硬化性樹脂である、[1]〜[5]のいずれかに記載の半導体ウエハ表面保護フィルム。
[7] 前記熱硬化性樹脂b1は、熱重合性二重結合、エポキシ基又はアジリジニル基を含む(メタ)アクリル酸エステル系ポリマーである、[1]〜[6]のいずれかに記載の半導体ウエハ表面保護フィルム。
[8] 前記熱硬化性樹脂b1は、熱重合性二重結合を含む(メタ)アクリル酸エステル系ポリマーである、[1]〜[7]のいずれかに記載の半導体ウエハ表面保護フィルム。
[9] 前記熱硬化性樹脂b1は、前記(メタ)アクリル酸エステル系ポリマーの全構成単位のうち0.2〜30モル%の構成単位が、前記熱重合性二重結合、エポキシ基又はアジリジニル基を有する化合物で変性されたものである、[7]に記載の半導体ウエハ表面保護フィルム。
[10] 前記粘着剤組成物は、熱重合開始剤をさらに含む、[9]に記載の半導体ウエハ表面保護フィルム。
[11] 前記粘着剤組成物は、熱可塑性樹脂b2をさらに含み、前記熱硬化性樹脂b1と前記熱可塑性樹脂b2との含有比が、b1/b2の質量比で1/99〜90/10である、[1]〜[10]のいずれかに記載の半導体ウエハ表面保護フィルム。
[12] 前記熱可塑性樹脂b2が、(メタ)アクリル酸エステルポリマーである、[11]に記載の半導体ウエハ表面保護フィルム。
[13] 前記粘着剤組成物は、架橋剤をさらに含む、[1]〜[12]のいずれかに記載の半導体ウエハ表面保護フィルム。
[14] 前記粘着性表層Cは、(メタ)アクリル酸エステルポリマーを含む、[1]〜[13]のいずれかに記載の半導体ウエハ表面保護フィルム。
[15] 前記粘着性表層Cに含まれる前記(メタ)アクリル酸エステルポリマーは、熱重合性二重結合、エポキシ基又はアジリジニル基を含む、[14]に記載の半導体ウエハ表面保護フィルム。
[16] 前記粘着性表層Cに含まれる前記熱重合性二重結合、エポキシ基又はアジリジニル基を含む(メタ)アクリル酸エステルポリマーの少なくとも一部は硬化されている、[15]に記載の半導体ウエハ表面保護フィルム。
[17] 半導体ウエハの回路形成面に、[1]〜[16]のいずれかに記載の半導体ウエハ表面保護フィルムをG’bminを示す温度よりも低い温度で貼り付ける工程と、前記半導体ウエハ表面保護フィルムが貼り付けられた半導体ウエハの非回路形成面を研削する工程と、研削後の前記半導体ウエハの非回路形成面を、G’bminを示す温度以上の温度で加工する工程と、前記半導体ウエハ表面保護フィルムを剥離する工程とを含む、半導体装置の製造方法。
[18] 前記半導体ウエハの回路形成面には、0.1μm以上の段差が設けられている、[17]に記載の半導体装置の製造方法。
[19] 前記G’bminを示す温度以上の温度で加工する工程が、スパッタリング、蒸着、めっきおよびCVDからなる群より選ばれる少なくとも一つで、前記半導体ウエハの非回路形成面に薄膜を形成する工程、不純物活性化アニール処理工程、イオン注入工程又はリフロー工程を含む、[17]又は[18]に記載の半導体装置の製造方法。
半導体ウエハ表面保護フィルムは、基材層Aと、粘着性吸収層Bと、粘着性表層Cとをこの順に含む。
基材層Aは、特に限定されず、熱可塑性樹脂、熱硬化性樹脂、金属箔、紙などで構成される。
粘着性吸収層Bは、熱硬化性樹脂b1を含む粘着剤組成物で構成されうる。粘着剤組成物は、さらに熱重合開始剤と架橋剤の少なくとも一方を含有していてもよい。
熱硬化性樹脂b1は、熱重合性二重結合、エポキシ基、又はアジリジニル基を有するポリマーであり、貯蔵弾性率を調整しやすいことなどから、熱重合性二重結合、エポキシ基、又はアジリジニル基を有する(メタ)アクリル酸エステル系ポリマーであることが好ましく、熱重合性二重結合を有する(メタ)アクリル酸エステル系ポリマーであることがより好ましい。なお、本発明における(メタ)アクリル酸エステル系ポリマーは、メタアクリル酸エステル系ポリマーまたはアクリル酸エステル系ポリマーを意味する。(メタ)アクリル酸エステル系ポリマーの一部又は全部は、多官能(メタ)アクリル酸エステル化合物であってもよい。
粘着性吸収層Bを構成する粘着剤組成物は、熱重合開始剤を含有する。熱重合開始剤は、熱硬化性樹脂b1が熱重合性二重結合を有する場合は、熱ラジカル重合開始剤であることが好ましく;熱硬化性樹脂b1がエポキシ基又はアジリジニル基を有する場合は、熱カチオン重合開始剤または熱アニオン重合開始剤であることが好ましく、潜在硬化性があればより好ましい。
ビス(4-メチルベンゾイル)パーオキサイド、ヘキサン酸t−ブチルペルオキシ−2−エチル、ベンゾイルパーオキサイド、1,1−ビス(t−ブチルペルオキシ)−2−メチルシクロへキサン、1,1−ビス(t−ヘキシルペルオキシ)シクロへキサン、1,1−ビス(t−ブチルペルオキシ)シクロへキサン、2,2−ビス(4,4−ビス−(t−ブチルペルオキシ)シクロヘキシル)プロパン、モノカルボン酸t−ヘキシルペルオキシイソプロピル、ペルオキシマレイン酸t−ブチル、2,2−ビス−(t−ブチルペルオキシ)ブタン、t−ブチルペルオキシアセテイト、4,4−ビス−(t−ブチルペルオキシ)ペンタン酸n−ブチル、ビス(2−t−ブチルペルオキシイソプロピル)ベンゼン、過酸化ジクミル、過酸化ビス−t−ヘキシル、2,5−ジメチル−2,5−ビス(t−ブチルペルオキシ)へキサン、過酸化t−ブチルクミル、過酸化ジ−t−ブチル2,5−ジメチル−2,5−ビス(t−ブチルペルオキシ)ヘキシン、ジイソプロピルベンゼンヒドロパーオキサイド
トリフェニルホスフィン等のホスフィン化合物;
テトラフェニルホスホニウム・テトラフェニルボレート等のホスホニウム塩
ピペリジン、N,N−ジメチルピペラジン、トリエチレンジアミン、ジアザビシクロウンデセン、ジアザビシクロノネン、トリス(ジメチルアミノメチル)フェノール等の三級アミン;
ジアザビシクロウンデセン−オクチル酸塩、ジアザビシクロウンデセン−ギ酸塩、ジアザビシクロウンデセン−p−トルエンスルホン酸塩、ジアザビシクロウンデセン−o−フタル酸塩等の三級アミン塩;
イミダゾール、2−メチルイミダゾール、2-ウンデシルイミダゾール、2-ヘプタデシルイミダゾール、1,2-ジメチルイミダゾール、2-エチル-4-メチルイミダゾール、2-フェニルイミダゾール、2-フェニル-4-メチルイミダゾール、1-ベンジル-2-メチルイミダゾール、1-ベンジル-2-フェニルイミダゾール、1-シアノエチル-2-ウンデシルイミダゾリウムトリメリテイト、1-シアノエチル-2-フェニルイミダゾリウムトリメリテイト、2-フェニル-4,5-ジヒドロキシメチルイミダゾール、2-フェニル-4-メチル-5-ヒドロキシメチルイミダゾール等のイミダゾール化合物。
粘着性吸収層Bを構成する粘着剤組成物は、架橋剤をさらに含有していてもよい。粘着剤組成物に架橋剤を添加することで、使用環境下で、粘着性吸収層B中で架橋反応が起こり、G’bminが過剰に低下することが抑制される。
G’b250/G’bmin≧1.5 …式(1)
粘着性表層Cは、公知の粘着剤組成物、例えば(メタ)アクリル酸エステルポリマーを含む粘着剤組成物で構成されうる。そのような(メタ)アクリル酸エステルポリマーの例には、特開2004−210890号公報に記載の(メタ)アクリル酸エステルポリマーなどが含まれる。
本発明の半導体装置は、1)半導体ウエハの回路形成面に、本発明の半導体ウエハ表面保護フィルムをG’bminを示す温度よりも低い温度で貼り付ける工程と;2)半導体ウエハ表面保護フィルムが貼り付けられた半導体ウエハの非回路形成面を研削する工程と;3)研削後の半導体ウエハの非回路形成面を、G’bminを示す温度以上の温度で加工する工程と;4)半導体ウエハ表面保護フィルムを剥離する工程とを経て製造されうる。
1)基材層A
ポリイミドフィルム:東レ・デュポン株式会社製カプトン150EN−A、厚み38μm(明確な融点はなく、熱分解に至る耐熱性樹脂フィルム)
ポリエチレンナフタレートフィルム:帝人デュポンフィルム株式会社製テオネックス、厚み50μm、融点269℃
(粘着剤塗布液1の調製)
熱重合性二重結合を有する(メタ)アクリル酸エステルポリマーP1の合成
アクリル酸エチル48質量部、アクリル酸2−エチルヘキシル27質量部、アクリル酸メチル20質量部、メタクリル酸グリシジル5質量部および重合開始剤としてベンゾイルパーオキサイド0.2質量部を混合した。得られた溶液を、トルエン65質量部、酢酸エチル50質量部が入った窒素置換フラスコ中に撹拌しながら80℃で5時間かけて滴下し、さらに5時間撹拌して反応させた。反応終了後、得られた溶液を冷却し、キシレン25質量部、アクリル酸2.5質量部とテトラデシルベンジルアンモニウムクロライド1.5質量部を加えて、空気を吹き込みながら80℃で10時間反応させて、熱重合性二重結合を有するアクリル酸エステル系ポリマーP1の溶液を得た。ポリマーP1を構成する全構成単位に対するメタクリル酸グリシジル由来の構成単位の含有割合は3.926モル%であった。
パーテトラA(2,2−ビス(4,4−ジt−ブチルペロキシシクロヘキシル)プロパン、日油株式会社製)を、パーブチルO(t−ブチルパーオキシ−2−エチルヘキサノエート、日油株式会社製)に変更した以外は粘着剤塗布液1と同様にして粘着剤塗布液2を得た。
重合反応機に脱イオン水150質量部、重合開始剤として4,4’−アゾビス−4−シアノバレリックアシッド〔大塚化学(株)製、商品名:ACVA〕を0.625質量部、アクリル酸−2−エチルヘキシル60.25質量部、アクリル酸−n−ブチル20質量部、メタクリル酸メチル12質量部、メタクリル酸−2−ヒドロキシエチル3質量部、メタクリル酸2質量部、アクリルアミド1質量部、ポリテトラメチレングリコールジアクリレート〔日本油脂(株)製、商品名:ADT−250〕1質量部、水溶性コモノマーとしてポリオキシエチレンノニルフェニルエーテル(エチレンオキサイドの付加モル数の平均値:約20)の硫酸エステルのアンモニウム塩のベンゼン環に重合性の1−プロペニル基を導入したもの〔第一工業製薬(株)製、商品名:アクアロンHS−10〕0.75質量部を装入し、攪拌下で70〜72℃において8時間乳化重合させて、アクリル系樹脂エマルションP2を得た。
イソシアネート架橋剤オレスターP49−75S(三井化学株式会社製)を、イソシアネート架橋剤タケネートD−160N(三井化学株式会社製)に変更した以外は粘着剤塗布液1と同様にして粘着剤塗布液4を得た。
イソシアネート架橋剤オレスターP49−75S(三井化学株式会社製)0.5質量部を、イソシアネート架橋剤タケネートD−170N(三井化学株式会社製)2質量部に変更した以外は粘着剤塗布液1と同様にして粘着剤塗布液5を得た。
イソシアネート架橋剤オレスターP49−75S(三井化学株式会社製)を、イソシアネート架橋剤タケネートD−120N(三井化学株式会社製)に変更した以外は粘着剤塗布液1と同様にして粘着剤塗布液6を得た。
アクリル酸エステルポリマーP3の合成
アクリル酸2−エチルヘキシル21重量部、アクリル酸エチル48重量部、アクリル酸メチル21重量部、アクリル酸2−ヒドロキシエチル9重量部、及び重合開始剤としてベンゾイルパーオキサイド0.5重量部を混合し、トルエン55重量部、酢酸エチル50重量部が入った窒素置換フラスコ中に攪拌しながら80℃で5時間かけて滴下し、さらに5時間攪拌して反応させアクリル酸エステル系ポリマーP3の溶液を得た。
粘着剤塗布液5に、日油株式会社製パーテトラA(2,2−ビス(4,4−ビス−(t−ブチルペルオキシ)シクロヘキシル)プロパン)を固形分換算でポリマー100質量部に対して0.8質量部を添加し粘着剤塗布液8を得た。
粘着剤塗布液7に、日油株式会社製パーテトラA(2,2−ビス(4,4−ビス−(t−ブチルペルオキシ)シクロヘキシル)プロパン)を固形分換算でポリマー100質量部に対して0.3質量部を添加し粘着剤塗布液9を得た。
前記アクリル酸エステルポリマーP3の溶液に、アクリル酸エステル共重合体P1溶液を、固形分比で50:50重量部の比率となるように加え、均一に撹拌した。さらに固形分換算でポリマー混合物100質量部に対してイソシアネート架橋剤タケネートD−170N(三井化学株式会社製)2重量部を添加した。さらに、日油株式会社製パーテトラA(2,2−ビス(4,4−ビス−(t−ブチルペルオキシ)シクロヘキシル)プロパン)を固形分換算でポリマー100質量部に対して0.8質量部を添加した。得られた液を酢酸エチル/トルエン1:1混合溶媒で希釈して固形分濃度27質量%の粘着剤塗布液10を得た。
前記アクリル酸エステルポリマーP3の溶液に、固形分換算でポリマー混合物100質量部に対してイソシアネート架橋剤オレスターP49−75S(三井化学株式会社製)0.8重量部を添加し、酢酸エチル/トルエン1:1混合溶媒で希釈して固形分濃度27質量%の粘着剤塗布液11を得た。
得られたサンプルの貯蔵弾性率を、動的粘弾性測定装置(レオメトリックス社製、形式:RMS−800、直径8mmのパラレルプレート(平行円盤)型アタッチメントを使用)を用いて、周波数1rad/secにて、−40〜300℃の温度範囲で測定した。具体的には、サンプルを、60℃にて上記パラレルプレート型アタッチメントを介して動的粘弾性測定装置にセットし、−40℃から250℃まで3℃/分の速度で昇温しながら貯蔵弾性率を測定した。測定終了後、得られた−40〜250℃の貯蔵弾性率−温度曲線のうち25℃以上250℃以下の範囲で、それぞれ貯蔵弾性率が最小となる温度;即ち、105℃(B1)、100℃(B4)、102℃(B6)、118℃(B7)、114℃(B9)及び250℃(B11)における貯蔵弾性率G’bminの値と、250℃における貯蔵弾性率G’b250の値とを読み取った。
粘着性表層C用サンプルC1、C2、C3、C5、C8及びC10についても、前述と同様にして貯蔵弾性率G’cminの値と、250℃における貯蔵弾性率G’c250の値とを読み取った。
(実施例1)
粘着性吸収層Bの製造
基材層Aとして、プラズマ処理したポリイミドフィルム(東レ・デュポン株式会社製カプトン150EN−C、厚み38μm)を準備した。このポリイミドフィルムのプラズマ処理上に、得られた粘着剤塗布液1を、ダイコーターを用いて塗布した後、100℃で5分間乾燥させて、厚み50μmの粘着性吸収層Bを形成した。
一方、得られた粘着剤塗布液1を、ダイコーターを用いて、離型処理したポリエチレンテレフタレート離型フィルム(SP−PET T15、三井化学東セロ株式会社製)に塗布した後、100℃で5分間乾燥させて、厚み10μmの塗膜を得た。次いで、得られた塗膜を60℃で3日熱硬化させて、粘着性表層Cを得た。
離型フィルム上に設けられた上記粘着性表層Cを、ポリイミドフィルム上に設けられた粘着性吸収層Bに貼り合わせて押圧し、転写させた。それにより、基材層A/粘着性吸収層B/粘着性表層C(38μm/50μm/10μm)の3層からなる表面保護フィルムを得た。
粘着性表層Cの厚みを6μmに変更した以外は実施例1と同様にして表面保護フィルムを得た。
粘着性吸収層Bの厚みを75μmに変更した以外は実施例1と同様にして表面保護フィルムを得た。
粘着性表層Cを構成する粘着性塗布液の種類を、表3に示されるように変更した以外は実施例1と同様にして表面保護フィルムを得た。このうち実施例5は、硬化を行わなかった。
粘着性吸収層Bを構成する粘着性塗布液の種類、および粘着性表層Cを構成する粘着性塗布液の種類と硬化条件を、それぞれ表3に示されるように変更した以外は実施例1と同様にして表面保護フィルムを得た。
基材層Aの種類を表3に示されるように変更した以外は実施例7と同様にして表面保護フィルムを得た。
粘着性吸収層Bと粘着性表層Cの種類や硬化条件を、表4に示されるように変更した以外は実施例1と同様にして表面保護フィルムを得た。
粘着性吸収層Bを設けなかった以外は実施例1と同様にして表面保護フィルムを得た。
1−1)密着性
実用評価集積回路がウエハの周辺部まで組み込まれたシリコンウエハ(直径:200mm、厚み:725μm、チップ面積:100mm2、スクライブラインの幅:100μm、スクライブラインの深さ:2μm、各チップには高さ10μmの絶縁層が部分的に設けられている)10枚の表面に、得られた表面保護フィルムをそれぞれ70℃で貼り付けた。貼り付けた表面保護フィルムの上から、表面保護フィルムとウエハとの間の状態を光学顕微鏡OPTIPHOT2((株)ニコン製)を用いて観察し、幅100μm以上の気泡の有無を確認した。10枚のウエハのうち、1枚でも直径50μm以上の気泡があった場合、「気泡有り」とした。
表面保護フィルムが貼られたウエハの裏面を、研削装置DFG841((株)ディスコ製)を用いて、水をかけて冷却しながら、研削後のウエハ厚みが60μmとなるまで研削した。10枚のウエハについて研削加工を行った。研削加工が終了した後、各ウエハの表面と表面保護フィルムとの間に、ウエハ周辺から研削水が浸入したか否かを目視観察し、研削水の浸入が縁から5mm以上進入した枚数をカウントした。
前記1)でウエハの回路形成面に表面保護フィルムを貼り付けて、1時間以上放置した後、150℃で15分間プリベークし、100Pa以下の減圧下、150℃、180℃、200℃、220℃、又は250℃でそれぞれ30分間さらに加熱した。減圧下で加熱する過程における、フィルムの浮きの有無を目視観察した。上記150℃から250℃の範囲で、10枚のウエハのいずれにも浮きが認められない最高温度を「減圧下耐熱温度」とした。浮きの判断基準として、目視で直径0.5mm以上の浮きが認められた場合とした。
3−1)粘着力
得られた表面保護フィルムを、23℃において、SUS304−BA板(JIS G−4305規定、縦:20cm、横:5cm)上に、その粘着剤層を介して貼り付けて1時間放置した。放置後、表面保護フィルムの基材層A側から、減圧乾燥機を用いて、減圧下(10−3Pa)において、250℃で30分間加熱した。その後、表面保護フィルムの一端を挟持し、剥離角度:180度、剥離速度:300mm/min.でSUS304−BA板の表面からフィルムを剥離した。この剥離時の応力を測定して、g/25mmに換算し、粘着力とした。他の条件は、全てJIS Z−0237に準じた。
前記1−2)で研削水の浸入を観察した後、ウエハを真空定温乾燥機(アドバンテック(株)製VO―320)で10−3Pa、250℃30分間加熱した。次いで、表面保護テープ剥がし機{タカトリ(株)製、MODEL:ATRM−2000B;使用剥がしテープ:ハイランド印フィラメントテープNo.897〔住友スリーエム(株)製〕}にて、表面保護フィルムを剥離した。表面保護フィルムを剥離したときに、ウエハが破損した枚数をカウントした。
前記3−3)で剥離時に破損しなかったウエハの表面を、光学顕微鏡{(株)ニコン製:OPTIPHOT2}を用いて50〜1000倍の範囲に拡大して、ウエハ表面の全チップに対してチップ毎に汚染の有無を観察した。チップ上に視認される汚染が1点以上みられた場合には、その汚染が研削くずによるものか、糊残りによるものかを確認した上で、下記式から汚染発生率Crを算出した。
Cr=(C2/C1)×100
(Cr:汚染発生率(%)、C1:観察したチップ数、C2:汚染チップ数)
パーテトラA(2,2−ビス(4,4―ジ−t−ブチルペロキシシクロヘキシル)プロパン、日油株式会社製)を、パーブチルO(t−ブチルパーオキシ−2−エチルヘキサノエート、日油株式会社製)に変更した以外は粘着剤塗布液1と同様にして粘着剤塗布液2を得た。
(実施例1)
粘着性吸収層Bの製造
基材層Aとして、プラズマ処理したポリイミドフィルム(東レ・デュポン株式会社製カプトン150EN−A、厚み38μm)を準備した。このポリイミドフィルムのプラズマ処理面上に、得られた粘着剤塗布液1を、ダイコーターを用いて塗布した後、100℃で5分間乾燥させて、厚み50μmの粘着性吸収層Bを形成した。
Claims (19)
- 基材層Aと、粘着性吸収層Bと、粘着性表層Cとをこの順に有し、
前記粘着性吸収層Bは、熱硬化性樹脂b1を含む粘着剤組成物からなり、
前記粘着性吸収層Bの、25℃以上250℃未満の範囲における貯蔵弾性率G’bの最小値G’bminが0.001MPa以上0.1MPa未満であり、250℃における貯蔵弾性率G’b250が0.005MPa以上であり、かつ前記G’bminを示す温度が50℃以上150℃以下であり、
前記粘着性表層Cの、25℃以上250℃未満の範囲における貯蔵弾性率G’cの最小値G’cminが0.03MPa以上である、半導体ウエハ表面保護フィルム。 - 前記G’cminは、前記G’bminよりも大きい、請求項1に記載の半導体ウエハ表面保護フィルム。
- 前記G’b250は、前記G’bminよりも大きい、請求項1に記載の半導体ウエハ表面保護フィルム。
- 前記G’cminが0.03MPa以上3MPa未満であり、かつ
250℃における前記粘着性表層Cの貯蔵弾性率G’c250が0.1MPa以上である、請求項1に記載の半導体ウエハ表面保護フィルム。 - 前記粘着性吸収層Bの厚さTbが10μm以上600μm以下であり、かつ前記粘着性表層Cの厚さTcが、1μm以上50μm以下である、請求項1に記載の半導体ウエハ表面保護フィルム。
- 前記熱硬化性樹脂b1は、熱重合性二重結合、エポキシ基又はアジリジニル基を含む熱硬化性樹脂である、請求項1に記載の半導体ウエハ表面保護フィルム。
- 前記熱硬化性樹脂b1は、熱重合性二重結合、エポキシ基又はアジリジニル基を含む(メタ)アクリル酸エステル系ポリマーである、請求項1に記載の半導体ウエハ表面保護フィルム。
- 前記熱硬化性樹脂b1は、熱重合性二重結合を含む(メタ)アクリル酸エステル系ポリマーである、請求項1に記載の半導体ウエハ表面保護フィルム。
- 前記熱硬化性樹脂b1は、前記(メタ)アクリル酸エステル系ポリマーの全構成単位のうち0.2〜30モル%の構成単位が、前記熱重合性二重結合、エポキシ基、又はアジリジニル基を有する化合物で変性されたものである、請求項8に記載の半導体ウエハ表面保護フィルム。
- 前記粘着剤組成物は、熱重合開始剤をさらに含む、請求項1に記載の半導体ウエハ表面保護フィルム。
- 前記粘着剤組成物は、熱可塑性樹脂b2をさらに含み、
前記熱硬化性樹脂b1と前記熱可塑性樹脂b2との含有比が、b1/b2の質量比で1/99〜90/10である、請求項1に記載の半導体ウエハ表面保護フィルム。 - 前記熱可塑性樹脂b2が、(メタ)アクリル酸エステルポリマーである、請求項11に記載の半導体ウエハ表面保護フィルム。
- 前記粘着剤組成物は、架橋剤をさらに含む、請求項1に記載の半導体ウエハ表面保護フィルム。
- 前記粘着性表層Cは、(メタ)アクリル酸エステルポリマーを含む、請求項1に記載の半導体ウエハ表面保護フィルム。
- 前記粘着性表層Cに含まれる前記(メタ)アクリル酸エステルポリマーは、熱重合性二重結合、エポキシ基又はアジリジニル基を含む、請求項14に記載の半導体ウエハ表面保護フィルム。
- 前記粘着性表層Cに含まれる前記熱重合性二重結合、エポキシ基又はアジリジニル基を含む(メタ)アクリル酸エステルポリマーの少なくとも一部は硬化されている、請求項15に記載の半導体ウエハ表面保護フィルム。
- 半導体ウエハの回路形成面に、請求項1に記載の半導体ウエハ表面保護フィルムをG’bminを示す温度よりも低い温度で貼り付ける工程と、
前記半導体ウエハ表面保護フィルムが貼り付けられた半導体ウエハの非回路形成面を研削する工程と、
研削後の前記半導体ウエハの非回路形成面を、G’bminを示す温度以上の温度で加工する工程と、
前記半導体ウエハ表面保護フィルムを剥離する工程とを含む、半導体装置の製造方法。 - 前記半導体ウエハの回路形成面には、0.1μm以上の段差が設けられている、請求項17に記載の半導体装置の製造方法。
- 前記G’bminを示す温度以上の温度で加工する工程が、スパッタリング、蒸着、めっきおよびCVDからなる群より選ばれる少なくとも一つで、前記半導体ウエハの非回路形成面に薄膜を形成する工程、不純物活性化アニール処理工程、イオン注入工程又はリフロー工程を含む、請求項17に記載の半導体装置の製造方法。
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