TW201208112A - Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses - Google Patents

Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses

Info

Publication number
TW201208112A
TW201208112A TW100104000A TW100104000A TW201208112A TW 201208112 A TW201208112 A TW 201208112A TW 100104000 A TW100104000 A TW 100104000A TW 100104000 A TW100104000 A TW 100104000A TW 201208112 A TW201208112 A TW 201208112A
Authority
TW
Taiwan
Prior art keywords
group iii
iii nitride
nitride based
structures
well
Prior art date
Application number
TW100104000A
Other languages
English (en)
Inventor
Michael John Bergmann
Daniel Carleton Driscoll
Ashonita Chavan
Pablo Cantu-Alejandro
James Ibbetson
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of TW201208112A publication Critical patent/TW201208112A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
TW100104000A 2010-02-03 2011-02-01 Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses TW201208112A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/699,541 US8575592B2 (en) 2010-02-03 2010-02-03 Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses

Publications (1)

Publication Number Publication Date
TW201208112A true TW201208112A (en) 2012-02-16

Family

ID=44341018

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100104000A TW201208112A (en) 2010-02-03 2011-02-01 Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses

Country Status (6)

Country Link
US (1) US8575592B2 (zh)
EP (1) EP2532033B1 (zh)
KR (1) KR20120118055A (zh)
CN (1) CN102822995A (zh)
TW (1) TW201208112A (zh)
WO (1) WO2011097150A1 (zh)

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