TW200630754A - Resist compound and radiation-sensitive composition - Google Patents
Resist compound and radiation-sensitive compositionInfo
- Publication number
- TW200630754A TW200630754A TW094146026A TW94146026A TW200630754A TW 200630754 A TW200630754 A TW 200630754A TW 094146026 A TW094146026 A TW 094146026A TW 94146026 A TW94146026 A TW 94146026A TW 200630754 A TW200630754 A TW 200630754A
- Authority
- TW
- Taiwan
- Prior art keywords
- compound
- radiation
- composition
- sensitive
- solid element
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C39/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
- C07C39/12—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings
- C07C39/15—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings with all hydroxy groups on non-condensed rings, e.g. phenylphenol
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/02—Ethers
- C07C43/03—Ethers having all ether-oxygen atoms bound to acyclic carbon atoms
- C07C43/14—Unsaturated ethers
- C07C43/164—Unsaturated ethers containing six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/02—Ethers
- C07C43/18—Ethers having an ether-oxygen atom bound to a carbon atom of a ring other than a six-membered aromatic ring
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/02—Ethers
- C07C43/18—Ethers having an ether-oxygen atom bound to a carbon atom of a ring other than a six-membered aromatic ring
- C07C43/196—Ethers having an ether-oxygen atom bound to a carbon atom of a ring other than a six-membered aromatic ring containing hydroxy or O-metal groups
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/02—Ethers
- C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
- C07C43/205—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring the aromatic ring being a non-condensed ring
- C07C43/2055—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring the aromatic ring being a non-condensed ring containing more than one ether bond
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/02—Ethers
- C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
- C07C43/225—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing halogen
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/30—Compounds having groups
- C07C43/315—Compounds having groups containing oxygen atoms singly bound to carbon atoms not being acetal carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C49/00—Ketones; Ketenes; Dimeric ketenes; Ketonic chelates
- C07C49/587—Unsaturated compounds containing a keto groups being part of a ring
- C07C49/703—Unsaturated compounds containing a keto groups being part of a ring containing hydroxy groups
- C07C49/747—Unsaturated compounds containing a keto groups being part of a ring containing hydroxy groups containing six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/96—Esters of carbonic or haloformic acids
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2601/00—Systems containing only non-condensed rings
- C07C2601/12—Systems containing only non-condensed rings with a six-membered ring
- C07C2601/14—The ring being saturated
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/56—Ring systems containing bridged rings
- C07C2603/58—Ring systems containing bridged rings containing three rings
- C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
- C07C2603/74—Adamantanes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004374003 | 2004-12-24 | ||
JP2005076319 | 2005-03-17 | ||
JP2005142162 | 2005-05-16 | ||
JP2005194941 | 2005-07-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200630754A true TW200630754A (en) | 2006-09-01 |
TWI400568B TWI400568B (zh) | 2013-07-01 |
Family
ID=36601859
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101144975A TWI494697B (zh) | 2004-12-24 | 2005-12-23 | 光阻用化合物 |
TW094146026A TWI400568B (zh) | 2004-12-24 | 2005-12-23 | 感放射線性組成物、非晶質膜及形成光阻圖案的方法 |
TW101144974A TWI495632B (zh) | 2004-12-24 | 2005-12-23 | 光阻用化合物 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101144975A TWI494697B (zh) | 2004-12-24 | 2005-12-23 | 光阻用化合物 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101144974A TWI495632B (zh) | 2004-12-24 | 2005-12-23 | 光阻用化合物 |
Country Status (7)
Country | Link |
---|---|
US (3) | US7919223B2 (zh) |
EP (3) | EP2808736B1 (zh) |
JP (2) | JP5402965B2 (zh) |
KR (3) | KR101301411B1 (zh) |
CN (1) | CN101088046B (zh) |
TW (3) | TWI494697B (zh) |
WO (1) | WO2006068267A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101558358B (zh) * | 2006-12-13 | 2012-06-27 | 日产化学工业株式会社 | 含低分子溶解促进剂的形成抗蚀剂下层膜的组合物 |
Families Citing this family (35)
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US7960089B2 (en) * | 2005-09-20 | 2011-06-14 | Tokyo Ohka Kogyo Co., Ltd. | Compound, method for producing same, positive resist composition and method for forming resist pattern |
JP2008056596A (ja) * | 2006-08-30 | 2008-03-13 | Tokyo Ohka Kogyo Co Ltd | 化合物、ポジ型レジスト組成物およびレジストパターン形成方法 |
JP2008056597A (ja) * | 2006-08-30 | 2008-03-13 | Tokyo Ohka Kogyo Co Ltd | 化合物、ポジ型レジスト組成物およびレジストパターン形成方法 |
EP2060949A4 (en) | 2006-09-08 | 2011-05-04 | Jsr Corp | RADIATION-SENSITIVE COMPOSITION AND PROCESS FOR PRODUCING A LOW-MOLECULAR COMPOUND FOR USE THEREIN |
JP4245179B2 (ja) * | 2006-09-29 | 2009-03-25 | 株式会社日立製作所 | パターン形成用基材及びネガ型レジスト組成物、並びにパターン形成方法 |
CN104281006B (zh) | 2006-11-02 | 2019-01-22 | 三菱瓦斯化学株式会社 | 放射线敏感性组合物 |
JP4858136B2 (ja) * | 2006-12-06 | 2012-01-18 | 三菱瓦斯化学株式会社 | 感放射線性レジスト組成物 |
WO2009072465A1 (ja) * | 2007-12-07 | 2009-06-11 | Mitsubishi Gas Chemical Company, Inc. | リソグラフィー用下層膜形成組成物及び多層レジストパターン形成方法 |
JP2009221194A (ja) * | 2008-02-22 | 2009-10-01 | Sumitomo Chemical Co Ltd | 光酸発生基結合型多価フェノール誘導体、該誘導体の製造方法及び該誘導体を含む電子線用又はeuv用化学増幅型レジスト組成物 |
US9152043B2 (en) * | 2008-05-22 | 2015-10-06 | Georgia Tech Research Corporation | Negative tone molecular glass resists and methods of making and using same |
JP5049935B2 (ja) * | 2008-06-20 | 2012-10-17 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
EP3062151B1 (en) * | 2011-08-12 | 2021-05-05 | Mitsubishi Gas Chemical Company, Inc. | Resist composition, method for forming resist pattern, polyphenolic compound for use in the composition, and alcoholic compound that can be derived therefrom |
JP2013067612A (ja) | 2011-09-23 | 2013-04-18 | Rohm & Haas Electronic Materials Llc | カリックスアレーン化合物およびこれを含むフォトレジスト組成物 |
JP2013079230A (ja) | 2011-09-23 | 2013-05-02 | Rohm & Haas Electronic Materials Llc | カリックスアレーンおよびこれを含むフォトレジスト組成物 |
KR102171002B1 (ko) | 2012-07-31 | 2020-10-28 | 가부시키가이샤 아데카 | 잠재성 첨가제 및 상기 첨가제를 함유하는 조성물 |
EP2955575B1 (en) | 2013-02-08 | 2020-07-29 | Mitsubishi Gas Chemical Company, Inc. | Resist composition, resist pattern formation method, and polyphenol derivative used in same |
WO2015137485A1 (ja) | 2014-03-13 | 2015-09-17 | 三菱瓦斯化学株式会社 | レジスト組成物及びレジストパターン形成方法 |
EP3118183B1 (en) | 2014-03-13 | 2021-07-21 | Mitsubishi Gas Chemical Company, Inc. | Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying the compound or resin |
TWI651593B (zh) * | 2014-03-14 | 2019-02-21 | 日商Jsr股份有限公司 | 配線的製造方法、感放射線性組成物、電子電路及電子元件 |
EP3239141A4 (en) | 2014-12-25 | 2018-08-15 | Mitsubishi Gas Chemical Company, Inc. | Compound, resin, underlayer film forming material for lithography, underlayer film for lithography, pattern forming method and purification method |
WO2016123141A1 (en) * | 2015-01-26 | 2016-08-04 | Berreau Lisa M | Carbon monoxide releasing molecules and associated methods |
CN107533290B (zh) | 2015-03-30 | 2021-04-09 | 三菱瓦斯化学株式会社 | 抗蚀基材、抗蚀剂组合物及抗蚀图案形成方法 |
CN107428646B (zh) | 2015-03-30 | 2021-03-02 | 三菱瓦斯化学株式会社 | 化合物、树脂、和它们的纯化方法、及其应用 |
WO2016158169A1 (ja) | 2015-03-31 | 2016-10-06 | 三菱瓦斯化学株式会社 | レジスト組成物、レジストパターン形成方法、及びそれに用いるポリフェノール化合物 |
US11256170B2 (en) | 2015-03-31 | 2022-02-22 | Mitsubishi Gas Chemical Company, Inc. | Compound, resist composition, and method for forming resist pattern using it |
US11137686B2 (en) | 2015-08-31 | 2021-10-05 | Mitsubishi Gas Chemical Company, Inc. | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method |
US11143962B2 (en) | 2015-08-31 | 2021-10-12 | Mitsubishi Gas Chemical Company, Inc. | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method |
EP3348542A4 (en) | 2015-09-10 | 2019-04-03 | Mitsubishi Gas Chemical Company, Inc. | COMPOUND, RESIN, RESIST COMPOSITION AND RADIATION SENSITIVE COMPOSITION, METHOD FOR FORMING A RESIST STRUCTURE, METHOD FOR PRODUCING AN AMORPHOUS FILMS, MATERIAL FOR FORMING A lithographic LAYER FILMS, COMPOSITION FOR PRODUCING A lithographic LAYER FILMS, METHOD FOR PRODUCING A CONTROL STRUCTURE AND CLEANING PROCESS |
EP3395845A4 (en) * | 2015-12-25 | 2019-08-14 | Mitsubishi Gas Chemical Company, Inc. | COMPOUND, RESIN, COMPOSITION, METHOD FOR FORMING A RESIST PATTERN, AND METHOD FOR FORMING A SWITCH PATTERN |
JP7194356B2 (ja) * | 2016-07-21 | 2022-12-22 | 三菱瓦斯化学株式会社 | 化合物、樹脂及び組成物、並びにレジストパターン形成方法及び回路パターン形成方法 |
KR20190123732A (ko) | 2017-02-23 | 2019-11-01 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 화합물, 수지, 조성물, 패턴형성방법 및 정제방법 |
JP7252516B2 (ja) | 2017-06-28 | 2023-04-05 | 三菱瓦斯化学株式会社 | 膜形成材料、リソグラフィー用膜形成用組成物、光学部品形成用材料、レジスト組成物、レジストパターン形成方法、レジスト用永久膜、感放射線性組成物、アモルファス膜の製造方法、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜の製造方法及び回路パターン形成方法 |
JP6973265B2 (ja) * | 2018-04-20 | 2021-11-24 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
TW202024006A (zh) * | 2018-08-24 | 2020-07-01 | 日商三菱瓦斯化學股份有限公司 | 化合物,及包含其之組成物,以及阻劑圖型之形成方法及絕緣膜之形成方法 |
WO2022085475A1 (ja) * | 2020-10-21 | 2022-04-28 | 株式会社Adeka | 組成物、硬化物、硬化物の製造方法及び添加剤 |
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- 2011-03-18 US US13/051,155 patent/US8350096B2/en active Active
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101558358B (zh) * | 2006-12-13 | 2012-06-27 | 日产化学工业株式会社 | 含低分子溶解促进剂的形成抗蚀剂下层膜的组合物 |
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Publication number | Publication date |
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TW201312280A (zh) | 2013-03-16 |
JP5402965B2 (ja) | 2014-01-29 |
KR20130042036A (ko) | 2013-04-25 |
US20130004896A1 (en) | 2013-01-03 |
TWI495632B (zh) | 2015-08-11 |
CN101088046B (zh) | 2011-05-25 |
WO2006068267A1 (ja) | 2006-06-29 |
JP2012136520A (ja) | 2012-07-19 |
EP1830228B1 (en) | 2015-08-05 |
KR101412954B1 (ko) | 2014-06-26 |
US8802353B2 (en) | 2014-08-12 |
US20110165516A1 (en) | 2011-07-07 |
EP2808736B1 (en) | 2018-07-18 |
KR20130042037A (ko) | 2013-04-25 |
KR101301411B1 (ko) | 2013-08-28 |
JP2011173885A (ja) | 2011-09-08 |
EP2662727B1 (en) | 2019-08-14 |
EP2662727A3 (en) | 2014-03-05 |
EP1830228A4 (en) | 2010-09-22 |
US7919223B2 (en) | 2011-04-05 |
US8350096B2 (en) | 2013-01-08 |
US20080113294A1 (en) | 2008-05-15 |
EP2808736A3 (en) | 2015-04-01 |
EP2808736A2 (en) | 2014-12-03 |
TWI494697B (zh) | 2015-08-01 |
TWI400568B (zh) | 2013-07-01 |
KR20070086451A (ko) | 2007-08-27 |
EP1830228A1 (en) | 2007-09-05 |
EP2662727A2 (en) | 2013-11-13 |
KR101415492B1 (ko) | 2014-07-24 |
JP5447541B2 (ja) | 2014-03-19 |
TW201311628A (zh) | 2013-03-16 |
CN101088046A (zh) | 2007-12-12 |
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