TW200304142A - Memory device array having a pair of magnetic bits sharing a common conductor line - Google Patents

Memory device array having a pair of magnetic bits sharing a common conductor line Download PDF

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Publication number
TW200304142A
TW200304142A TW091134207A TW91134207A TW200304142A TW 200304142 A TW200304142 A TW 200304142A TW 091134207 A TW091134207 A TW 091134207A TW 91134207 A TW91134207 A TW 91134207A TW 200304142 A TW200304142 A TW 200304142A
Authority
TW
Taiwan
Prior art keywords
memory cell
plane
array
memory
word line
Prior art date
Application number
TW091134207A
Other languages
English (en)
Chinese (zh)
Inventor
Lung T Tran
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of TW200304142A publication Critical patent/TW200304142A/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
TW091134207A 2002-03-14 2002-11-25 Memory device array having a pair of magnetic bits sharing a common conductor line TW200304142A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/098,903 US6778421B2 (en) 2002-03-14 2002-03-14 Memory device array having a pair of magnetic bits sharing a common conductor line

Publications (1)

Publication Number Publication Date
TW200304142A true TW200304142A (en) 2003-09-16

Family

ID=27765436

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091134207A TW200304142A (en) 2002-03-14 2002-11-25 Memory device array having a pair of magnetic bits sharing a common conductor line

Country Status (6)

Country Link
US (2) US6778421B2 (enExample)
EP (1) EP1345232A3 (enExample)
JP (1) JP4700259B2 (enExample)
KR (1) KR101010321B1 (enExample)
CN (1) CN100481551C (enExample)
TW (1) TW200304142A (enExample)

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Also Published As

Publication number Publication date
US6778421B2 (en) 2004-08-17
EP1345232A3 (en) 2004-07-28
US6879508B2 (en) 2005-04-12
US20040090809A1 (en) 2004-05-13
CN1445782A (zh) 2003-10-01
KR101010321B1 (ko) 2011-01-25
US20030174530A1 (en) 2003-09-18
JP4700259B2 (ja) 2011-06-15
EP1345232A2 (en) 2003-09-17
JP2004031914A (ja) 2004-01-29
KR20030074423A (ko) 2003-09-19
CN100481551C (zh) 2009-04-22

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