JP4700259B2 - 共通の導線を共有する一対の磁気ビットを有するメモリ素子アレイ - Google Patents

共通の導線を共有する一対の磁気ビットを有するメモリ素子アレイ Download PDF

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Publication number
JP4700259B2
JP4700259B2 JP2003069239A JP2003069239A JP4700259B2 JP 4700259 B2 JP4700259 B2 JP 4700259B2 JP 2003069239 A JP2003069239 A JP 2003069239A JP 2003069239 A JP2003069239 A JP 2003069239A JP 4700259 B2 JP4700259 B2 JP 4700259B2
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Prior art keywords
memory cell
array
array plane
word line
memory
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Expired - Fee Related
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JP2003069239A
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Japanese (ja)
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JP2004031914A5 (enExample
JP2004031914A (ja
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ルン・ティー・トラン
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
JP2003069239A 2002-03-14 2003-03-14 共通の導線を共有する一対の磁気ビットを有するメモリ素子アレイ Expired - Fee Related JP4700259B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/098,903 US6778421B2 (en) 2002-03-14 2002-03-14 Memory device array having a pair of magnetic bits sharing a common conductor line
US10/098903 2002-03-14

Publications (3)

Publication Number Publication Date
JP2004031914A JP2004031914A (ja) 2004-01-29
JP2004031914A5 JP2004031914A5 (enExample) 2006-05-11
JP4700259B2 true JP4700259B2 (ja) 2011-06-15

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JP2003069239A Expired - Fee Related JP4700259B2 (ja) 2002-03-14 2003-03-14 共通の導線を共有する一対の磁気ビットを有するメモリ素子アレイ

Country Status (6)

Country Link
US (2) US6778421B2 (enExample)
EP (1) EP1345232A3 (enExample)
JP (1) JP4700259B2 (enExample)
KR (1) KR101010321B1 (enExample)
CN (1) CN100481551C (enExample)
TW (1) TW200304142A (enExample)

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Also Published As

Publication number Publication date
US6778421B2 (en) 2004-08-17
TW200304142A (en) 2003-09-16
US20030174530A1 (en) 2003-09-18
CN100481551C (zh) 2009-04-22
EP1345232A2 (en) 2003-09-17
EP1345232A3 (en) 2004-07-28
CN1445782A (zh) 2003-10-01
US6879508B2 (en) 2005-04-12
KR20030074423A (ko) 2003-09-19
US20040090809A1 (en) 2004-05-13
KR101010321B1 (ko) 2011-01-25
JP2004031914A (ja) 2004-01-29

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