US6778420B2 - Method of operating programmable resistant element - Google Patents
Method of operating programmable resistant element Download PDFInfo
- Publication number
- US6778420B2 US6778420B2 US10/254,489 US25448902A US6778420B2 US 6778420 B2 US6778420 B2 US 6778420B2 US 25448902 A US25448902 A US 25448902A US 6778420 B2 US6778420 B2 US 6778420B2
- Authority
- US
- United States
- Prior art keywords
- programmable resistance
- programmable
- resistance
- state
- energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime, expires
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
- G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
Claims (28)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/254,489 US6778420B2 (en) | 2002-09-25 | 2002-09-25 | Method of operating programmable resistant element |
PCT/US2003/027150 WO2004030033A2 (en) | 2002-09-25 | 2003-08-27 | Method of operating programmable resistant element |
AU2003278739A AU2003278739A1 (en) | 2002-09-25 | 2003-08-27 | Method of operating programmable resistant element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/254,489 US6778420B2 (en) | 2002-09-25 | 2002-09-25 | Method of operating programmable resistant element |
Publications (2)
Publication Number | Publication Date |
---|---|
US20040057271A1 US20040057271A1 (en) | 2004-03-25 |
US6778420B2 true US6778420B2 (en) | 2004-08-17 |
Family
ID=31993375
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/254,489 Expired - Lifetime US6778420B2 (en) | 2002-09-25 | 2002-09-25 | Method of operating programmable resistant element |
Country Status (3)
Country | Link |
---|---|
US (1) | US6778420B2 (en) |
AU (1) | AU2003278739A1 (en) |
WO (1) | WO2004030033A2 (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050161747A1 (en) * | 2004-01-26 | 2005-07-28 | Hsiang-Lan Lung | Thin film phase-change memory |
US20050276138A1 (en) * | 2004-06-15 | 2005-12-15 | Sharp Kabushiki Kaisha | Semiconductor memory device |
US20060013034A1 (en) * | 2003-06-11 | 2006-01-19 | Tyler Lowrey | Die customization using programmable resistance memory elements |
US20060049389A1 (en) * | 2002-12-19 | 2006-03-09 | Koninklijke Philips Electronics N.V. | Electric device comprising phase change material |
US20080285333A1 (en) * | 2004-03-26 | 2008-11-20 | Koninklijke Philips Electronics, N.V. | Electric Device Comprising Phase Change Material |
US20080291718A1 (en) * | 2007-05-25 | 2008-11-27 | Jun Liu | Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same |
US20090016094A1 (en) * | 2002-08-02 | 2009-01-15 | Unity Semiconductor Corporation | Selection device for Re-Writable memory |
US20090179201A1 (en) * | 2008-01-11 | 2009-07-16 | Electro Scientific Industries, Inc. | Laser Chalcogenide Phase Change Device |
US10672468B2 (en) * | 2018-03-20 | 2020-06-02 | Toshiba Memory Corporation | Memory device |
US11037987B2 (en) | 2011-09-30 | 2021-06-15 | Hefei Reliance Memory Limited | Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells |
US11672189B2 (en) | 2004-02-06 | 2023-06-06 | Hefei Reliance Memory Limited | Two-terminal reversibly switchable memory device |
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US7316934B2 (en) * | 2000-12-18 | 2008-01-08 | Zavitan Semiconductors, Inc. | Personalized hardware |
US7323734B2 (en) * | 2003-02-25 | 2008-01-29 | Samsung Electronics Co., Ltd. | Phase changeable memory cells |
US20060056227A1 (en) * | 2004-09-10 | 2006-03-16 | Parkinson Ward D | One time programmable phase change memory |
DE102004047638B4 (en) * | 2004-09-30 | 2011-12-01 | Qimonda Ag | Non-volatile memory cell |
KR100657944B1 (en) * | 2005-01-12 | 2006-12-14 | 삼성전자주식회사 | Method of operating Phase change Random Access MemoryPRAM |
EP1811564B1 (en) * | 2006-01-20 | 2010-03-10 | STMicroelectronics S.r.l. | Electrical fuse device based on a phase-change memory element and corresponding programming method |
EP2045814A1 (en) * | 2007-10-03 | 2009-04-08 | STMicroelectronics S.r.l. | Method and device for irreversibly programming and reading nonvolatile memory cells |
US9224496B2 (en) | 2010-08-11 | 2015-12-29 | Shine C. Chung | Circuit and system of aggregated area anti-fuse in CMOS processes |
US9236141B2 (en) | 2010-08-20 | 2016-01-12 | Shine C. Chung | Circuit and system of using junction diode of MOS as program selector for programmable resistive devices |
US9496033B2 (en) | 2010-08-20 | 2016-11-15 | Attopsemi Technology Co., Ltd | Method and system of programmable resistive devices with read capability using a low supply voltage |
US10229746B2 (en) | 2010-08-20 | 2019-03-12 | Attopsemi Technology Co., Ltd | OTP memory with high data security |
US10249379B2 (en) | 2010-08-20 | 2019-04-02 | Attopsemi Technology Co., Ltd | One-time programmable devices having program selector for electrical fuses with extended area |
US8488359B2 (en) | 2010-08-20 | 2013-07-16 | Shine C. Chung | Circuit and system of using junction diode as program selector for one-time programmable devices |
US9431127B2 (en) | 2010-08-20 | 2016-08-30 | Shine C. Chung | Circuit and system of using junction diode as program selector for metal fuses for one-time programmable devices |
US9824768B2 (en) | 2015-03-22 | 2017-11-21 | Attopsemi Technology Co., Ltd | Integrated OTP memory for providing MTP memory |
US9460807B2 (en) | 2010-08-20 | 2016-10-04 | Shine C. Chung | One-time programmable memory devices using FinFET technology |
US9251893B2 (en) * | 2010-08-20 | 2016-02-02 | Shine C. Chung | Multiple-bit programmable resistive memory using diode as program selector |
US9042153B2 (en) * | 2010-08-20 | 2015-05-26 | Shine C. Chung | Programmable resistive memory unit with multiple cells to improve yield and reliability |
US10916317B2 (en) | 2010-08-20 | 2021-02-09 | Attopsemi Technology Co., Ltd | Programmable resistance memory on thin film transistor technology |
US9019742B2 (en) * | 2010-08-20 | 2015-04-28 | Shine C. Chung | Multiple-state one-time programmable (OTP) memory to function as multi-time programmable (MTP) memory |
US10923204B2 (en) | 2010-08-20 | 2021-02-16 | Attopsemi Technology Co., Ltd | Fully testible OTP memory |
US8804398B2 (en) * | 2010-08-20 | 2014-08-12 | Shine C. Chung | Reversible resistive memory using diodes formed in CMOS processes as program selectors |
US9711237B2 (en) | 2010-08-20 | 2017-07-18 | Attopsemi Technology Co., Ltd. | Method and structure for reliable electrical fuse programming |
US9818478B2 (en) | 2012-12-07 | 2017-11-14 | Attopsemi Technology Co., Ltd | Programmable resistive device and memory using diode as selector |
US8830720B2 (en) | 2010-08-20 | 2014-09-09 | Shine C. Chung | Circuit and system of using junction diode as program selector and MOS as read selector for one-time programmable devices |
US9025357B2 (en) * | 2010-08-20 | 2015-05-05 | Shine C. Chung | Programmable resistive memory unit with data and reference cells |
US9070437B2 (en) | 2010-08-20 | 2015-06-30 | Shine C. Chung | Circuit and system of using junction diode as program selector for one-time programmable devices with heat sink |
US8482972B2 (en) | 2010-08-20 | 2013-07-09 | Shine C. Chung | Memory devices using a plurality of diodes as program selectors with at least one being a polysilicon diode |
US9019791B2 (en) | 2010-11-03 | 2015-04-28 | Shine C. Chung | Low-pin-count non-volatile memory interface for 3D IC |
US8988965B2 (en) | 2010-11-03 | 2015-03-24 | Shine C. Chung | Low-pin-count non-volatile memory interface |
US8913449B2 (en) | 2012-03-11 | 2014-12-16 | Shine C. Chung | System and method of in-system repairs or configurations for memories |
US9076513B2 (en) | 2010-11-03 | 2015-07-07 | Shine C. Chung | Low-pin-count non-volatile memory interface with soft programming capability |
CN102544011A (en) | 2010-12-08 | 2012-07-04 | 庄建祥 | Anti-fuse memory and electronic system |
US8848423B2 (en) | 2011-02-14 | 2014-09-30 | Shine C. Chung | Circuit and system of using FinFET for building programmable resistive devices |
US10586832B2 (en) | 2011-02-14 | 2020-03-10 | Attopsemi Technology Co., Ltd | One-time programmable devices using gate-all-around structures |
US10192615B2 (en) | 2011-02-14 | 2019-01-29 | Attopsemi Technology Co., Ltd | One-time programmable devices having a semiconductor fin structure with a divided active region |
US8607019B2 (en) | 2011-02-15 | 2013-12-10 | Shine C. Chung | Circuit and method of a memory compiler based on subtractive approach |
US8912576B2 (en) | 2011-11-15 | 2014-12-16 | Shine C. Chung | Structures and techniques for using semiconductor body to construct bipolar junction transistors |
US9136261B2 (en) | 2011-11-15 | 2015-09-15 | Shine C. Chung | Structures and techniques for using mesh-structure diodes for electro-static discharge (ESD) protection |
US9324849B2 (en) | 2011-11-15 | 2016-04-26 | Shine C. Chung | Structures and techniques for using semiconductor body to construct SCR, DIAC, or TRIAC |
US8917533B2 (en) | 2012-02-06 | 2014-12-23 | Shine C. Chung | Circuit and system for testing a one-time programmable (OTP) memory |
US8861249B2 (en) | 2012-02-06 | 2014-10-14 | Shine C. Chung | Circuit and system of a low density one-time programmable memory |
US9007804B2 (en) | 2012-02-06 | 2015-04-14 | Shine C. Chung | Circuit and system of protective mechanisms for programmable resistive memories |
US9076526B2 (en) | 2012-09-10 | 2015-07-07 | Shine C. Chung | OTP memories functioning as an MTP memory |
US9183897B2 (en) | 2012-09-30 | 2015-11-10 | Shine C. Chung | Circuits and methods of a self-timed high speed SRAM |
US9324447B2 (en) | 2012-11-20 | 2016-04-26 | Shine C. Chung | Circuit and system for concurrently programming multiple bits of OTP memory devices |
US9412473B2 (en) | 2014-06-16 | 2016-08-09 | Shine C. Chung | System and method of a novel redundancy scheme for OTP |
CN105632551B (en) * | 2015-12-18 | 2018-09-25 | 中国科学院上海微系统与信息技术研究所 | Storage array, the storage chip of storage object logical relation and method |
US10535413B2 (en) | 2017-04-14 | 2020-01-14 | Attopsemi Technology Co., Ltd | Low power read operation for programmable resistive memories |
US11615859B2 (en) | 2017-04-14 | 2023-03-28 | Attopsemi Technology Co., Ltd | One-time programmable memories with ultra-low power read operation and novel sensing scheme |
US11062786B2 (en) | 2017-04-14 | 2021-07-13 | Attopsemi Technology Co., Ltd | One-time programmable memories with low power read operation and novel sensing scheme |
US10726914B2 (en) | 2017-04-14 | 2020-07-28 | Attopsemi Technology Co. Ltd | Programmable resistive memories with low power read operation and novel sensing scheme |
US10770160B2 (en) | 2017-11-30 | 2020-09-08 | Attopsemi Technology Co., Ltd | Programmable resistive memory formed by bit slices from a standard cell library |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6590807B2 (en) | 2001-08-02 | 2003-07-08 | Intel Corporation | Method for reading a structural phase-change memory |
US6597598B1 (en) | 2002-04-30 | 2003-07-22 | Hewlett-Packard Development Company, L.P. | Resistive cross point memory arrays having a charge injection differential sense amplifier |
US6608773B2 (en) | 1999-12-16 | 2003-08-19 | Ovonyx, Inc. | Programmable resistance memory array |
US20030174530A1 (en) | 2002-03-14 | 2003-09-18 | Tran Lung T. | Memory device array having a pair of magnetic bits sharing a common conductor line |
US20030206428A1 (en) | 2002-05-01 | 2003-11-06 | Ward Parkinson | High voltage row and column driver for programmable resistance memory |
-
2002
- 2002-09-25 US US10/254,489 patent/US6778420B2/en not_active Expired - Lifetime
-
2003
- 2003-08-27 WO PCT/US2003/027150 patent/WO2004030033A2/en not_active Application Discontinuation
- 2003-08-27 AU AU2003278739A patent/AU2003278739A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6608773B2 (en) | 1999-12-16 | 2003-08-19 | Ovonyx, Inc. | Programmable resistance memory array |
US6590807B2 (en) | 2001-08-02 | 2003-07-08 | Intel Corporation | Method for reading a structural phase-change memory |
US20030174530A1 (en) | 2002-03-14 | 2003-09-18 | Tran Lung T. | Memory device array having a pair of magnetic bits sharing a common conductor line |
US6597598B1 (en) | 2002-04-30 | 2003-07-22 | Hewlett-Packard Development Company, L.P. | Resistive cross point memory arrays having a charge injection differential sense amplifier |
US20030206428A1 (en) | 2002-05-01 | 2003-11-06 | Ward Parkinson | High voltage row and column driver for programmable resistance memory |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090016094A1 (en) * | 2002-08-02 | 2009-01-15 | Unity Semiconductor Corporation | Selection device for Re-Writable memory |
US7884349B2 (en) * | 2002-08-02 | 2011-02-08 | Unity Semiconductor Corporation | Selection device for re-writable memory |
USRE48202E1 (en) * | 2002-12-19 | 2020-09-08 | Iii Holdings 6, Llc | Electric device comprising phase change material |
US20060049389A1 (en) * | 2002-12-19 | 2006-03-09 | Koninklijke Philips Electronics N.V. | Electric device comprising phase change material |
US8779474B2 (en) * | 2002-12-19 | 2014-07-15 | Nxp, B.V. | Electric device comprising phase change material |
US20060013034A1 (en) * | 2003-06-11 | 2006-01-19 | Tyler Lowrey | Die customization using programmable resistance memory elements |
US7663907B2 (en) * | 2003-06-11 | 2010-02-16 | Ovonyx, Inc. | Die customization using programmable resistance memory elements |
US20070258279A1 (en) * | 2004-01-26 | 2007-11-08 | Macronix International Co., Ltd. | Thin film phase-change memory |
US7561463B2 (en) | 2004-01-26 | 2009-07-14 | Macronix International Co., Ltd. | Thin film phase-change memory |
US20050161747A1 (en) * | 2004-01-26 | 2005-07-28 | Hsiang-Lan Lung | Thin film phase-change memory |
US7138687B2 (en) * | 2004-01-26 | 2006-11-21 | Macronix International Co., Ltd. | Thin film phase-change memory |
US11672189B2 (en) | 2004-02-06 | 2023-06-06 | Hefei Reliance Memory Limited | Two-terminal reversibly switchable memory device |
US20080285333A1 (en) * | 2004-03-26 | 2008-11-20 | Koninklijke Philips Electronics, N.V. | Electric Device Comprising Phase Change Material |
US8115239B2 (en) * | 2004-03-26 | 2012-02-14 | Nxp B.V. | Electric device comprising phase change material |
US7027342B2 (en) * | 2004-06-15 | 2006-04-11 | Sharp Kabushiki Kaisha | Semiconductor memory device |
US20050276138A1 (en) * | 2004-06-15 | 2005-12-15 | Sharp Kabushiki Kaisha | Semiconductor memory device |
US7593254B2 (en) * | 2007-05-25 | 2009-09-22 | Micron Technology, Inc. | Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same |
US8717799B2 (en) | 2007-05-25 | 2014-05-06 | Micron Technology, Inc. | Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same |
US20080291718A1 (en) * | 2007-05-25 | 2008-11-27 | Jun Liu | Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same |
US8178906B2 (en) | 2008-01-11 | 2012-05-15 | Electro Scientific Industries, Inc. | Laser chalcogenide phase change device |
US20090179201A1 (en) * | 2008-01-11 | 2009-07-16 | Electro Scientific Industries, Inc. | Laser Chalcogenide Phase Change Device |
US11037987B2 (en) | 2011-09-30 | 2021-06-15 | Hefei Reliance Memory Limited | Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells |
US11289542B2 (en) | 2011-09-30 | 2022-03-29 | Hefei Reliance Memory Limited | Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells |
US11765914B2 (en) | 2011-09-30 | 2023-09-19 | Hefei Reliance Memory Limited | Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells |
US10672468B2 (en) * | 2018-03-20 | 2020-06-02 | Toshiba Memory Corporation | Memory device |
Also Published As
Publication number | Publication date |
---|---|
WO2004030033A3 (en) | 2004-09-23 |
WO2004030033A2 (en) | 2004-04-08 |
AU2003278739A8 (en) | 2004-04-19 |
US20040057271A1 (en) | 2004-03-25 |
AU2003278739A1 (en) | 2004-04-19 |
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