SG86459A1 - Tantalum nitride cvd deposition by tantalum oxide densification - Google Patents

Tantalum nitride cvd deposition by tantalum oxide densification

Info

Publication number
SG86459A1
SG86459A1 SG200100921A SG200100921A SG86459A1 SG 86459 A1 SG86459 A1 SG 86459A1 SG 200100921 A SG200100921 A SG 200100921A SG 200100921 A SG200100921 A SG 200100921A SG 86459 A1 SG86459 A1 SG 86459A1
Authority
SG
Singapore
Prior art keywords
tantalum
cvd deposition
oxide densification
nitride cvd
tantalum nitride
Prior art date
Application number
SG200100921A
Other languages
English (en)
Inventor
Bakli Mouloud
G Ghanayem Steve
T Tran Huyen
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG86459A1 publication Critical patent/SG86459A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0387—Making the trench
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
SG200100921A 2000-02-22 2001-02-20 Tantalum nitride cvd deposition by tantalum oxide densification SG86459A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/510,582 US6319766B1 (en) 2000-02-22 2000-02-22 Method of tantalum nitride deposition by tantalum oxide densification

Publications (1)

Publication Number Publication Date
SG86459A1 true SG86459A1 (en) 2002-02-19

Family

ID=24031320

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200100921A SG86459A1 (en) 2000-02-22 2001-02-20 Tantalum nitride cvd deposition by tantalum oxide densification

Country Status (5)

Country Link
US (2) US6319766B1 (fr)
EP (1) EP1127956A3 (fr)
JP (1) JP2002009016A (fr)
KR (1) KR20010083240A (fr)
SG (1) SG86459A1 (fr)

Families Citing this family (258)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100386447B1 (ko) * 1999-12-23 2003-06-02 주식회사 하이닉스반도체 반도체장치의 커패시터 제조방법
KR100358069B1 (ko) * 1999-12-27 2002-10-25 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
US6319766B1 (en) * 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
GB2361244B (en) * 2000-04-14 2004-02-11 Trikon Holdings Ltd A method of depositing dielectric
KR100333376B1 (ko) * 2000-06-30 2002-04-18 박종섭 반도체 소자의 게이트 제조방법
JP2002043299A (ja) * 2000-07-19 2002-02-08 Tokyo Electron Ltd 被処理体の熱処理方法
TWI334888B (fr) * 2000-09-08 2010-12-21 Tokyo Electron Ltd
US6573150B1 (en) * 2000-10-10 2003-06-03 Applied Materials, Inc. Integration of CVD tantalum oxide with titanium nitride and tantalum nitride to form MIM capacitors
JP2002289816A (ja) * 2001-03-23 2002-10-04 Toshiba Corp 半導体装置及びその製造方法
DE10114956C2 (de) * 2001-03-27 2003-06-18 Infineon Technologies Ag Verfahren zum Herstellen einer dielektrischen Schicht als Isolatorschicht für einen Grabenkondensator
US6534360B2 (en) * 2001-04-04 2003-03-18 Applied Materials, Inc. Process for depositing layers on a semiconductor wafer
US7037574B2 (en) 2001-05-23 2006-05-02 Veeco Instruments, Inc. Atomic layer deposition for fabricating thin films
US6511876B2 (en) * 2001-06-25 2003-01-28 International Business Machines Corporation High mobility FETS using A1203 as a gate oxide
KR100465761B1 (ko) * 2002-06-17 2005-01-13 삼성전자주식회사 탄탈륨 질화막을 포함하는 반도체 배선 구조 및 그 형성방법
US6541331B2 (en) * 2001-08-09 2003-04-01 International Business Machines Corporation Method of manufacturing high dielectric constant material
US6645853B1 (en) * 2001-12-05 2003-11-11 Advanced Micro Devices, Inc. Interconnects with improved barrier layer adhesion
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
KR100505043B1 (ko) * 2002-05-25 2005-07-29 삼성전자주식회사 커패시터 형성 방법
US6921702B2 (en) 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
DE10239869A1 (de) * 2002-08-29 2004-03-18 Infineon Technologies Ag Verbesserung der dielektrischen Eigenschaften von Schichten aus High-k-Materialien durch Plasmabehandlung
US7144806B1 (en) * 2002-10-23 2006-12-05 Novellus Systems, Inc. ALD of tantalum using a hydride reducing agent
US7101813B2 (en) 2002-12-04 2006-09-05 Micron Technology Inc. Atomic layer deposited Zr-Sn-Ti-O films
US6974768B1 (en) * 2003-01-15 2005-12-13 Novellus Systems, Inc. Methods of providing an adhesion layer for adhesion of barrier and/or seed layers to dielectric films
US6727560B1 (en) * 2003-02-10 2004-04-27 Advanced Micro Devices, Inc. Engineered metal gate electrode
AU2003213420A1 (en) 2003-03-17 2004-10-11 Fujitsu Limited Semiconductor device and method for manufacturing semiconductor device
KR100560666B1 (ko) * 2003-07-07 2006-03-16 삼성전자주식회사 반도체 소자 제조용 금속막 증착 시스템 및 그 운용 방법
US7186446B2 (en) * 2003-10-31 2007-03-06 International Business Machines Corporation Plasma enhanced ALD of tantalum nitride and bilayer
KR100668970B1 (ko) * 2003-11-05 2007-01-12 동부일렉트로닉스 주식회사 플라즈마 처리장치 및 이를 사용한 질화막 형성 방법
US7071118B2 (en) * 2003-11-12 2006-07-04 Veeco Instruments, Inc. Method and apparatus for fabricating a conformal thin film on a substrate
US20050230350A1 (en) 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7780793B2 (en) * 2004-02-26 2010-08-24 Applied Materials, Inc. Passivation layer formation by plasma clean process to reduce native oxide growth
US7067422B2 (en) * 2004-03-31 2006-06-27 Tokyo Electron Limited Method of forming a tantalum-containing gate electrode structure
US6989323B2 (en) * 2004-04-28 2006-01-24 International Business Machines Corporation Method for forming narrow gate structures on sidewalls of a lithographically defined sacrificial material
US7067409B2 (en) * 2004-05-10 2006-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance
US7378744B2 (en) * 2004-05-10 2008-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance
US7605469B2 (en) * 2004-06-30 2009-10-20 Intel Corporation Atomic layer deposited tantalum containing adhesion layer
US7601649B2 (en) 2004-08-02 2009-10-13 Micron Technology, Inc. Zirconium-doped tantalum oxide films
US7453149B2 (en) * 2004-08-04 2008-11-18 Taiwan Semiconductor Manufacturing Co., Ltd. Composite barrier layer
US7081421B2 (en) 2004-08-26 2006-07-25 Micron Technology, Inc. Lanthanide oxide dielectric layer
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US7494939B2 (en) 2004-08-31 2009-02-24 Micron Technology, Inc. Methods for forming a lanthanum-metal oxide dielectric layer
US7518179B2 (en) 2004-10-08 2009-04-14 Freescale Semiconductor, Inc. Virtual ground memory array and method therefor
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US20060130971A1 (en) * 2004-12-21 2006-06-22 Applied Materials, Inc. Apparatus for generating plasma by RF power
US20060216548A1 (en) * 2005-03-22 2006-09-28 Ming Mao Nanolaminate thin films and method for forming the same using atomic layer deposition
US7687409B2 (en) 2005-03-29 2010-03-30 Micron Technology, Inc. Atomic layer deposited titanium silicon oxide films
US20060270066A1 (en) * 2005-04-25 2006-11-30 Semiconductor Energy Laboratory Co., Ltd. Organic transistor, manufacturing method of semiconductor device and organic transistor
US7785947B2 (en) * 2005-04-28 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising the step of forming nitride/oxide by high-density plasma
US20060272577A1 (en) * 2005-06-03 2006-12-07 Ming Mao Method and apparatus for decreasing deposition time of a thin film
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7112490B1 (en) * 2005-07-25 2006-09-26 Freescale Semiconductor, Inc. Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench
US7285819B2 (en) * 2005-07-25 2007-10-23 Freescale Semiconductor, Inc. Nonvolatile storage array with continuous control gate employing hot carrier injection programming
US7262997B2 (en) * 2005-07-25 2007-08-28 Freescale Semiconductor, Inc. Process for operating an electronic device including a memory array and conductive lines
US7250340B2 (en) * 2005-07-25 2007-07-31 Freescale Semiconductor, Inc. Method of fabricating programmable structure including discontinuous storage elements and spacer control gates in a trench
US7582929B2 (en) * 2005-07-25 2009-09-01 Freescale Semiconductor, Inc Electronic device including discontinuous storage elements
US7619270B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Electronic device including discontinuous storage elements
US7394686B2 (en) * 2005-07-25 2008-07-01 Freescale Semiconductor, Inc. Programmable structure including discontinuous storage elements and spacer control gates in a trench
US7256454B2 (en) * 2005-07-25 2007-08-14 Freescale Semiconductor, Inc Electronic device including discontinuous storage elements and a process for forming the same
US20070020840A1 (en) * 2005-07-25 2007-01-25 Freescale Semiconductor, Inc. Programmable structure including nanocrystal storage elements in a trench
US7314798B2 (en) * 2005-07-25 2008-01-01 Freescale Semiconductor, Inc. Method of fabricating a nonvolatile storage array with continuous control gate employing hot carrier injection programming
US7642594B2 (en) * 2005-07-25 2010-01-05 Freescale Semiconductor, Inc Electronic device including gate lines, bit lines, or a combination thereof
US7619275B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
US7749896B2 (en) 2005-08-23 2010-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for forming the same
DE102005051819B3 (de) * 2005-10-28 2007-06-14 Infineon Technologies Ag Herstellungsverfahren für Halbleiterstrukturen
US7972974B2 (en) 2006-01-10 2011-07-05 Micron Technology, Inc. Gallium lanthanide oxide films
US20070209930A1 (en) * 2006-03-09 2007-09-13 Applied Materials, Inc. Apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
KR101117450B1 (ko) 2006-03-09 2012-03-13 어플라이드 머티어리얼스, 인코포레이티드 낮은 에너지 플라즈마 시스템을 이용하여 하이 유전상수 트랜지스터 게이트를 제조하는 방법 및 장치
US7592224B2 (en) 2006-03-30 2009-09-22 Freescale Semiconductor, Inc Method of fabricating a storage device including decontinuous storage elements within and between trenches
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US20070259111A1 (en) * 2006-05-05 2007-11-08 Singh Kaushal K Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
KR100764739B1 (ko) * 2006-05-10 2007-10-08 삼성전자주식회사 반도체 소자의 형성 방법
US20080132060A1 (en) * 2006-11-30 2008-06-05 Macronix International Co., Ltd. Contact barrier layer deposition process
US7651916B2 (en) * 2007-01-24 2010-01-26 Freescale Semiconductor, Inc Electronic device including trenches and discontinuous storage elements and processes of forming and using the same
US7572699B2 (en) * 2007-01-24 2009-08-11 Freescale Semiconductor, Inc Process of forming an electronic device including fins and discontinuous storage elements
US7838922B2 (en) * 2007-01-24 2010-11-23 Freescale Semiconductor, Inc. Electronic device including trenches and discontinuous storage elements
JP4751460B2 (ja) * 2009-02-18 2011-08-17 東京エレクトロン株式会社 基板搬送装置及び基板処理システム
TWI404811B (zh) * 2009-05-07 2013-08-11 Atomic Energy Council 金屬氮氧化物薄膜結構之製作方法
US9803088B2 (en) * 2009-08-24 2017-10-31 Basf Corporation Enhanced performance of mineral based aqueous barrier coatings
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
WO2013070436A1 (fr) 2011-11-08 2013-05-16 Applied Materials, Inc. Procédés de réduction de dislocation de substrat durant un traitement de remplissage d'intervalle
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9711351B2 (en) * 2014-09-11 2017-07-18 Asm Ip Holding B.V. Process for densifying nitride film
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US9406617B1 (en) * 2015-11-19 2016-08-02 International Business Machines Corporation Structure and process for W contacts
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
CN110678973B (zh) 2017-06-02 2023-09-19 应用材料公司 碳化硼硬掩模的干式剥除
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10269571B2 (en) 2017-07-12 2019-04-23 Applied Materials, Inc. Methods for fabricating nanowire for semiconductor applications
US10179941B1 (en) 2017-07-14 2019-01-15 Applied Materials, Inc. Gas delivery system for high pressure processing chamber
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10096516B1 (en) * 2017-08-18 2018-10-09 Applied Materials, Inc. Method of forming a barrier layer for through via applications
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
CN111095524B (zh) 2017-09-12 2023-10-03 应用材料公司 用于使用保护阻挡物层制造半导体结构的设备和方法
US10510547B2 (en) 2017-09-13 2019-12-17 Applied Materials, Inc. Metal and metal-derived films
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10643867B2 (en) 2017-11-03 2020-05-05 Applied Materials, Inc. Annealing system and method
CN117936420A (zh) 2017-11-11 2024-04-26 微材料有限责任公司 用于高压处理腔室的气体输送系统
SG11202003438QA (en) 2017-11-16 2020-05-28 Applied Materials Inc High pressure steam anneal processing apparatus
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US20190229053A1 (en) * 2018-01-22 2019-07-25 United Microelectronics Corp. Metal-insulator-metal capacitor structure and manufacturing method thereof
KR102649241B1 (ko) 2018-01-24 2024-03-18 어플라이드 머티어리얼스, 인코포레이티드 고압 어닐링을 사용한 심 힐링
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
KR20230079236A (ko) 2018-03-09 2023-06-05 어플라이드 머티어리얼스, 인코포레이티드 금속 함유 재료들을 위한 고압 어닐링 프로세스
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10566188B2 (en) 2018-05-17 2020-02-18 Applied Materials, Inc. Method to improve film stability
US10704141B2 (en) 2018-06-01 2020-07-07 Applied Materials, Inc. In-situ CVD and ALD coating of chamber to control metal contamination
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
KR102528076B1 (ko) 2018-10-30 2023-05-03 어플라이드 머티어리얼스, 인코포레이티드 반도체 응용들을 위한 구조를 식각하기 위한 방법들
JP2022507390A (ja) 2018-11-16 2022-01-18 アプライド マテリアルズ インコーポレイテッド 強化拡散プロセスを使用する膜の堆積
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11217444B2 (en) * 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
WO2020117462A1 (fr) 2018-12-07 2020-06-11 Applied Materials, Inc. Système de traitement de semi-conducteurs
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
US11800824B2 (en) * 2021-03-24 2023-10-24 Applied Materials, Inc. Low temperature silicon nitride/silicon oxynitride stack film with tunable dielectric constant

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0328527A1 (fr) * 1986-10-02 1989-08-23 British Aerospace Public Limited Company Creation en temps reel de cartes de profondeur stereo
US5665210A (en) * 1990-07-24 1997-09-09 Semiconductor Energy Laboratory Co., Ltd. Method of forming insulating films, capacitances, and semiconductor devices

Family Cites Families (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI118158B (sv) 1999-10-15 2007-07-31 Asm Int Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess
FI117944B (fi) 1999-10-15 2007-04-30 Asm Int Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi
FI57975C (fi) 1979-02-28 1980-11-10 Lohja Ab Oy Foerfarande och anordning vid uppbyggande av tunna foereningshinnor
US4389973A (en) 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
US4464701A (en) * 1983-08-29 1984-08-07 International Business Machines Corporation Process for making high dielectric constant nitride based materials and devices using the same
US4782380A (en) 1987-01-22 1988-11-01 Advanced Micro Devices, Inc. Multilayer interconnection for integrated circuit structure having two or more conductive metal layers
US4886966A (en) 1988-01-07 1989-12-12 Kabushiki Kaisha Toshiba Apparatus for introducing samples into an inductively coupled, plasma source mass spectrometer
US4851095A (en) 1988-02-08 1989-07-25 Optical Coating Laboratory, Inc. Magnetron sputtering apparatus and process
EP0486475B1 (fr) * 1988-03-03 1997-12-03 Asahi Glass Company Ltd. Film amorphe à base d'oxyde et objet recouvert d'un tel film
AU616736B2 (en) * 1988-03-03 1991-11-07 Asahi Glass Company Limited Amorphous oxide film and article having such film thereon
US5196365A (en) 1989-07-05 1993-03-23 Fujitsu Limited Method of making semiconductor memory device having stacked capacitor
KR100215338B1 (ko) * 1991-03-06 1999-08-16 가나이 쓰도무 반도체 장치의 제조방법
JPH0677402A (ja) * 1992-07-02 1994-03-18 Natl Semiconductor Corp <Ns> 半導体デバイス用誘電体構造及びその製造方法
US5800857A (en) * 1992-09-18 1998-09-01 Pinnacle Research Institute, Inc. Energy storage device and methods of manufacture
JP2786071B2 (ja) 1993-02-17 1998-08-13 日本電気株式会社 半導体装置の製造方法
JP2813283B2 (ja) * 1993-07-14 1998-10-22 富士通株式会社 バーコード読取り装置
JP2679599B2 (ja) 1993-12-02 1997-11-19 日本電気株式会社 半導体装置の製造方法
KR950034588A (ko) 1994-03-17 1995-12-28 오가 노리오 탄탈계 고유전체재료 및 고유전체막의 형성방법 및 반도체장치
JP2636755B2 (ja) * 1994-11-09 1997-07-30 日本電気株式会社 半導体装置および半導体装置の製造方法
US5989999A (en) 1994-11-14 1999-11-23 Applied Materials, Inc. Construction of a tantalum nitride film on a semiconductor wafer
US6084302A (en) 1995-12-26 2000-07-04 Micron Technologies, Inc. Barrier layer cladding around copper interconnect lines
US6342277B1 (en) 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5916365A (en) 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
US5980977A (en) * 1996-12-09 1999-11-09 Pinnacle Research Institute, Inc. Method of producing high surface area metal oxynitrides as substrates in electrical energy storage
US5923056A (en) 1996-10-10 1999-07-13 Lucent Technologies Inc. Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials
US5872696A (en) * 1997-04-09 1999-02-16 Fujitsu Limited Sputtered and anodized capacitors capable of withstanding exposure to high temperatures
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
KR100385946B1 (ko) * 1999-12-08 2003-06-02 삼성전자주식회사 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자
KR100269306B1 (ko) 1997-07-31 2000-10-16 윤종용 저온처리로안정화되는금속산화막으로구성된완충막을구비하는집적회로장치및그제조방법
KR100261017B1 (ko) 1997-08-19 2000-08-01 윤종용 반도체 장치의 금속 배선층을 형성하는 방법
US5910880A (en) * 1997-08-20 1999-06-08 Micron Technology, Inc. Semiconductor circuit components and capacitors
US6197683B1 (en) 1997-09-29 2001-03-06 Samsung Electronics Co., Ltd. Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same
US6348376B2 (en) 1997-09-29 2002-02-19 Samsung Electronics Co., Ltd. Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same
US6087261A (en) * 1997-09-30 2000-07-11 Fujitsu Limited Method for production of semiconductor device
KR100274603B1 (ko) 1997-10-01 2001-01-15 윤종용 반도체장치의제조방법및그의제조장치
FI104383B (fi) * 1997-12-09 2000-01-14 Fortum Oil & Gas Oy Menetelmä laitteistojen sisäpintojen päällystämiseksi
KR100269328B1 (ko) 1997-12-31 2000-10-16 윤종용 원자층 증착 공정을 이용하는 도전층 형성방법
US6015917A (en) 1998-01-23 2000-01-18 Advanced Technology Materials, Inc. Tantalum amide precursors for deposition of tantalum nitride on a substrate
US6162744A (en) * 1998-02-28 2000-12-19 Micron Technology, Inc. Method of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having high-K oxygen containing capacitor dielectric layers
US6165834A (en) * 1998-05-07 2000-12-26 Micron Technology, Inc. Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell
NL1009327C2 (nl) 1998-06-05 1999-12-10 Asm Int Werkwijze en inrichting voor het overbrengen van wafers.
US20020009861A1 (en) * 1998-06-12 2002-01-24 Pravin K. Narwankar Method and apparatus for the formation of dielectric layers
KR100319888B1 (ko) 1998-06-16 2002-01-10 윤종용 선택적 금속층 형성방법, 이를 이용한 커패시터 형성 및 콘택홀 매립방법
KR100275738B1 (ko) 1998-08-07 2000-12-15 윤종용 원자층 증착법을 이용한 박막 제조방법
KR20000022003A (ko) 1998-09-10 2000-04-25 이경수 금속과규소를포함한3성분질화물막의형성방법
KR100287180B1 (ko) 1998-09-17 2001-04-16 윤종용 계면 조절층을 이용하여 금속 배선층을 형성하는 반도체 소자의 제조 방법
KR100327328B1 (ko) 1998-10-13 2002-05-09 윤종용 부분적으로다른두께를갖는커패시터의유전막형성방버뵤
KR100297719B1 (ko) * 1998-10-16 2001-08-07 윤종용 박막제조방법
US6540838B2 (en) 2000-11-29 2003-04-01 Genus, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US6200893B1 (en) 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US6305314B1 (en) 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US6124158A (en) 1999-06-08 2000-09-26 Lucent Technologies Inc. Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants
KR20010017820A (ko) 1999-08-14 2001-03-05 윤종용 반도체 소자 및 그 제조방법
US6391785B1 (en) 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US6511539B1 (en) 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
US6337289B1 (en) * 1999-09-24 2002-01-08 Applied Materials. Inc Method and apparatus for integrating a metal nitride film in a semiconductor device
DE10049257B4 (de) 1999-10-06 2015-05-13 Samsung Electronics Co., Ltd. Verfahren zur Dünnfilmerzeugung mittels atomarer Schichtdeposition
FI117942B (fi) * 1999-10-14 2007-04-30 Asm Int Menetelmä oksidiohutkalvojen kasvattamiseksi
AU1208201A (en) 1999-10-15 2001-04-30 Asm America, Inc. Method for depositing nanolaminate thin films on sensitive surfaces
US6475276B1 (en) 1999-10-15 2002-11-05 Asm Microchemistry Oy Production of elemental thin films using a boron-containing reducing agent
WO2001029280A1 (fr) 1999-10-15 2001-04-26 Asm America, Inc. Depot de carbures de metal de transition
JP5173098B2 (ja) 1999-10-15 2013-03-27 エーエスエム インターナショナル エヌ．ヴェー． ダマシン・メタライゼーションのためのコンフォーマルライニング層
US6203613B1 (en) 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
KR20010047128A (ko) 1999-11-18 2001-06-15 이경수 액체원료 기화방법 및 그에 사용되는 장치
US6780704B1 (en) 1999-12-03 2004-08-24 Asm International Nv Conformal thin films over textured capacitor electrodes
KR100705926B1 (ko) * 1999-12-22 2007-04-11 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
KR100624903B1 (ko) 1999-12-22 2006-09-19 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
FI20000099A0 (fi) 2000-01-18 2000-01-18 Asm Microchemistry Ltd Menetelmä metalliohutkalvojen kasvattamiseksi
US6743473B1 (en) 2000-02-16 2004-06-01 Applied Materials, Inc. Chemical vapor deposition of barriers from novel precursors
US6319766B1 (en) * 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
WO2001066832A2 (fr) 2000-03-07 2001-09-13 Asm America, Inc. Films minces calibres
KR100363088B1 (ko) 2000-04-20 2002-12-02 삼성전자 주식회사 원자층 증착방법을 이용한 장벽 금속막의 제조방법
US6984591B1 (en) 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
US6482733B2 (en) 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
KR100403611B1 (ko) * 2000-06-07 2003-11-01 삼성전자주식회사 금속-절연체-금속 구조의 커패시터 및 그 제조방법
KR100332313B1 (ko) 2000-06-24 2002-04-12 서성기 Ａｌｄ 박막증착장치 및 증착방법
US6592942B1 (en) 2000-07-07 2003-07-15 Asm International N.V. Method for vapour deposition of a film onto a substrate
KR100444149B1 (ko) * 2000-07-22 2004-08-09 주식회사 아이피에스 Ald 박막증착설비용 클리닝방법
KR100396879B1 (ko) * 2000-08-11 2003-09-02 삼성전자주식회사 동일 물질로 이루어진 이중막을 포함하는 다중막으로캡슐화된 캐패시터를 구비한 반도체 메모리 소자 및 그의제조 방법
US6613695B2 (en) * 2000-11-24 2003-09-02 Asm America, Inc. Surface preparation prior to deposition
EP1340269B1 (fr) * 2000-11-30 2009-02-25 Asm International N.V. Films minces pour dispositifs magnetiques
KR100385947B1 (ko) 2000-12-06 2003-06-02 삼성전자주식회사 원자층 증착 방법에 의한 박막 형성 방법
US20020076507A1 (en) * 2000-12-15 2002-06-20 Chiang Tony P. Process sequence for atomic layer deposition
US6844604B2 (en) * 2001-02-02 2005-01-18 Samsung Electronics Co., Ltd. Dielectric layer for semiconductor device and method of manufacturing the same
FI109770B (fi) 2001-03-16 2002-10-15 Asm Microchemistry Oy Menetelmä metallinitridiohutkalvojen valmistamiseksi
KR100363332B1 (en) 2001-05-23 2002-12-05 Samsung Electronics Co Ltd Method for forming semiconductor device having gate all-around type transistor
US6828218B2 (en) 2001-05-31 2004-12-07 Samsung Electronics Co., Ltd. Method of forming a thin film using atomic layer deposition
US6806145B2 (en) 2001-08-31 2004-10-19 Asm International, N.V. Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer
AU2002333601A1 (en) 2001-09-14 2003-04-01 Asm America, Inc. Metal nitride deposition by ald using gettering reactant
US6960537B2 (en) 2001-10-02 2005-11-01 Asm America, Inc. Incorporation of nitrogen into high k dielectric film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0328527A1 (fr) * 1986-10-02 1989-08-23 British Aerospace Public Limited Company Creation en temps reel de cartes de profondeur stereo
US5665210A (en) * 1990-07-24 1997-09-09 Semiconductor Energy Laboratory Co., Ltd. Method of forming insulating films, capacitances, and semiconductor devices

Also Published As

Publication number Publication date
US6638810B2 (en) 2003-10-28
EP1127956A2 (fr) 2001-08-29
US20030008501A1 (en) 2003-01-09
JP2002009016A (ja) 2002-01-11
EP1127956A3 (fr) 2002-09-25
KR20010083240A (ko) 2001-08-31
US6319766B1 (en) 2001-11-20

Similar Documents

Publication Publication Date Title
SG86459A1 (en) Tantalum nitride cvd deposition by tantalum oxide densification
AU2002333601A1 (en) Metal nitride deposition by ald using gettering reactant
SG82703A1 (en) A two-step, low argon, hdp cvd oxide deposition process
GB2376175B (en) Upright-type vacuum cleaner
AU1168202A (en) Epitaxial oxide films via nitride conversion
AU2001291797A1 (en) Cvd coating device
GB2364896B (en) Belt-mounted vacuum cleaner
ZA200403783B (en) Sintered polycrystalline gallium nitride.
AU3229600A (en) Chemical vapor deposition of tungsten nitride
GB0103042D0 (en) Upright-type vacuum cleaner
GB0104873D0 (en) Upright-type vacuum cleaner
AU2002222970A1 (en) Group iii nitride compound semiconductor device
AU2001229351A1 (en) Manufacturing medical devices by vapor deposition
GB0118379D0 (en) Vacuum cleaner
SG89388A1 (en) Reduced fluorine contamination for tungsten cvd
ZA200107111B (en) Ceramic structure.
GB0109403D0 (en) Vacuum cleaner
GB2378125B (en) Vacuum cleaner
AU146419S (en) Vacuum cleaner
ZA200102833B (en) Organosilicon compounds.
GB0116857D0 (en) Vapor cleaner
GB2385515B (en) Upright-type vacuum cleaner
AU2001244499A1 (en) Nanometric scale coherently controlled deposition
GB2355262B (en) Metalorganic chemical vapour deposition precursors
SG101511A1 (en) Vacuum deposition method