AU2001291797A1 - Cvd coating device - Google Patents

Cvd coating device

Info

Publication number
AU2001291797A1
AU2001291797A1 AU2001291797A AU9179701A AU2001291797A1 AU 2001291797 A1 AU2001291797 A1 AU 2001291797A1 AU 2001291797 A AU2001291797 A AU 2001291797A AU 9179701 A AU9179701 A AU 9179701A AU 2001291797 A1 AU2001291797 A1 AU 2001291797A1
Authority
AU
Australia
Prior art keywords
coating device
cvd coating
cvd
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001291797A
Inventor
Holger Jurgensen
Johannes Kappeler
Gerd Strauch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of AU2001291797A1 publication Critical patent/AU2001291797A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU2001291797A 2000-09-01 2001-08-24 Cvd coating device Abandoned AU2001291797A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10043600A DE10043600B4 (en) 2000-09-01 2000-09-01 Device for depositing in particular crystalline layers on one or more, in particular also crystalline substrates
DE10043600 2000-09-01
PCT/EP2001/009795 WO2002018672A1 (en) 2000-09-01 2001-08-24 Cvd coating device

Publications (1)

Publication Number Publication Date
AU2001291797A1 true AU2001291797A1 (en) 2002-03-13

Family

ID=7654974

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001291797A Abandoned AU2001291797A1 (en) 2000-09-01 2001-08-24 Cvd coating device

Country Status (7)

Country Link
US (2) US7067012B2 (en)
EP (1) EP1313891B1 (en)
JP (1) JP4637450B2 (en)
AU (1) AU2001291797A1 (en)
DE (2) DE10043600B4 (en)
TW (1) TW574411B (en)
WO (1) WO2002018672A1 (en)

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DE10043601A1 (en) * 2000-09-01 2002-03-14 Aixtron Ag Device and method for depositing, in particular, crystalline layers on, in particular, crystalline substrates
DE10043599A1 (en) * 2000-09-01 2002-03-14 Aixtron Ag Device for depositing, in particular, crystalline layers on one or more, in particular likewise, crystalline substrates
US7122844B2 (en) 2002-05-13 2006-10-17 Cree, Inc. Susceptor for MOCVD reactor
US8366830B2 (en) 2003-03-04 2013-02-05 Cree, Inc. Susceptor apparatus for inverted type MOCVD reactor
DE10323085A1 (en) * 2003-05-22 2004-12-09 Aixtron Ag CVD coater
US20050011459A1 (en) * 2003-07-15 2005-01-20 Heng Liu Chemical vapor deposition reactor
US20050178336A1 (en) * 2003-07-15 2005-08-18 Heng Liu Chemical vapor deposition reactor having multiple inlets
JP2006028625A (en) * 2004-07-21 2006-02-02 Denso Corp Cvd apparatus
EP1790757B1 (en) * 2004-07-22 2013-08-14 Toyo Tanso Co., Ltd. Susceptor
JP2006173560A (en) * 2004-11-16 2006-06-29 Sumitomo Electric Ind Ltd Wafer guide, metal organic vapor phase growing device and method for depositing nitride semiconductor
DE102004058521A1 (en) * 2004-12-04 2006-06-14 Aixtron Ag Method and apparatus for depositing thick gallium nitrite layers on a sapphire substrate and associated substrate holder
DE102005055252A1 (en) * 2005-11-19 2007-05-24 Aixtron Ag CVD reactor with slide-mounted susceptor holder
US20090096349A1 (en) * 2007-04-26 2009-04-16 Moshtagh Vahid S Cross flow cvd reactor
US8216419B2 (en) 2008-03-28 2012-07-10 Bridgelux, Inc. Drilled CVD shower head
DE102007023970A1 (en) * 2007-05-23 2008-12-04 Aixtron Ag Apparatus for coating a plurality of densely packed substrates on a susceptor
DE102007026348A1 (en) * 2007-06-06 2008-12-11 Aixtron Ag Method and device for temperature control of the surface temperatures of substrates in a CVD reactor
US8668775B2 (en) 2007-10-31 2014-03-11 Toshiba Techno Center Inc. Machine CVD shower head
JP5292963B2 (en) * 2008-07-16 2013-09-18 株式会社デンソー Film forming apparatus and manufacturing method using the same
DE102009043848A1 (en) * 2009-08-25 2011-03-03 Aixtron Ag CVD method and CVD reactor
US20110049779A1 (en) * 2009-08-28 2011-03-03 Applied Materials, Inc. Substrate carrier design for improved photoluminescence uniformity
JP5409413B2 (en) * 2010-01-26 2014-02-05 日本パイオニクス株式会社 III-nitride semiconductor vapor phase growth system
US10808319B1 (en) * 2010-02-26 2020-10-20 Quantum Innovations, Inc. System and method for vapor deposition of substrates with circular substrate frame that rotates in a planetary motion and curved lens support arms
KR20130007594A (en) * 2010-03-03 2013-01-18 비코 인스트루먼츠 인코포레이티드 Wafer carrier with sloped edge
KR20110136583A (en) * 2010-06-15 2011-12-21 삼성엘이디 주식회사 Susceptor and chemical vapor deposition apparatus comprising the same
JP5101665B2 (en) * 2010-06-30 2012-12-19 東京エレクトロン株式会社 Substrate mounting table, substrate processing apparatus, and substrate processing system
KR20120083712A (en) * 2011-01-18 2012-07-26 삼성엘이디 주식회사 Susceptor and chemical vapor deposition apparatus comprising the same
JP5613083B2 (en) * 2011-02-28 2014-10-22 大陽日酸株式会社 Susceptor cover and vapor phase growth apparatus provided with the susceptor cover
JP5867913B2 (en) * 2011-05-30 2016-02-24 昭和電工株式会社 Silicon carbide film CVD system
US20130171350A1 (en) * 2011-12-29 2013-07-04 Intermolecular Inc. High Throughput Processing Using Metal Organic Chemical Vapor Deposition
KR20150125923A (en) 2013-02-27 2015-11-10 토요 탄소 가부시키가이샤 Susceptor
US9273413B2 (en) 2013-03-14 2016-03-01 Veeco Instruments Inc. Wafer carrier with temperature distribution control
CN104342758B (en) * 2013-07-24 2017-07-21 北京北方微电子基地设备工艺研究中心有限责任公司 pressure ring and plasma processing device
JP6097681B2 (en) 2013-12-24 2017-03-15 昭和電工株式会社 SiC epitaxial wafer manufacturing apparatus and SiC epitaxial wafer manufacturing method
US9396983B2 (en) * 2014-06-02 2016-07-19 Epistar Corporation Susceptor
JP6335683B2 (en) * 2014-06-30 2018-05-30 昭和電工株式会社 SiC epitaxial wafer manufacturing equipment
US20160033070A1 (en) * 2014-08-01 2016-02-04 Applied Materials, Inc. Recursive pumping member
DE102016115614A1 (en) 2016-08-23 2018-03-01 Aixtron Se Susceptor for a CVD reactor
KR102369676B1 (en) 2017-04-10 2022-03-04 삼성디스플레이 주식회사 Apparatus and method for manufacturing a display apparatus
WO2019078036A1 (en) 2017-10-18 2019-04-25 新日本テクノカーボン株式会社 Susceptor
TWI802439B (en) * 2017-10-27 2023-05-11 美商應用材料股份有限公司 Single wafer processing environments with spatial separation
JP7055004B2 (en) * 2017-11-13 2022-04-15 昭和電工株式会社 Manufacturing method of SiC epitaxial wafer
KR102535194B1 (en) * 2018-04-03 2023-05-22 주성엔지니어링(주) Apparatus for Processing Substrate
DE102019105913A1 (en) 2019-03-08 2020-09-10 Aixtron Se Susceptor arrangement of a CVD reactor
DE102019131794A1 (en) 2019-11-25 2021-05-27 Aixtron Se Wall-cooled gas inlet element for a CVD reactor

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US502746A (en) * 1893-08-08 Den neave
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JPS6058613A (en) * 1983-09-12 1985-04-04 Hitachi Ltd Epitaxial apparatus
FR2628985B1 (en) * 1988-03-22 1990-12-28 Labo Electronique Physique EPITAXY REACTOR WITH WALL PROTECTION
JPH02212394A (en) * 1989-02-13 1990-08-23 Mitsui Eng & Shipbuild Co Ltd Susceptor
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
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JP3317781B2 (en) * 1994-06-08 2002-08-26 東芝セラミックス株式会社 Method of manufacturing susceptor for heat treatment of semiconductor wafer
SE9500326D0 (en) * 1995-01-31 1995-01-31 Abb Research Ltd Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
JPH09167755A (en) * 1995-12-15 1997-06-24 Nec Corp Plasma oxide film processor
JP3872838B2 (en) * 1996-04-30 2007-01-24 松下電器産業株式会社 Crystal growth method
US6308654B1 (en) * 1996-10-18 2001-10-30 Applied Materials, Inc. Inductively coupled parallel-plate plasma reactor with a conical dome
JP3853453B2 (en) * 1997-01-06 2006-12-06 徳山東芝セラミックス株式会社 Vertical susceptor for vapor phase growth
US5788777A (en) * 1997-03-06 1998-08-04 Burk, Jr.; Albert A. Susceptor for an epitaxial growth factor
DE19813523C2 (en) * 1998-03-26 2000-03-02 Aixtron Ag CVD reactor and its use

Also Published As

Publication number Publication date
US20060201427A1 (en) 2006-09-14
DE10043600A1 (en) 2002-03-14
DE50114744D1 (en) 2009-04-16
US7067012B2 (en) 2006-06-27
JP4637450B2 (en) 2011-02-23
US20030221624A1 (en) 2003-12-04
EP1313891A1 (en) 2003-05-28
WO2002018672A1 (en) 2002-03-07
JP2004507619A (en) 2004-03-11
DE10043600B4 (en) 2013-12-05
EP1313891B1 (en) 2009-03-04
TW574411B (en) 2004-02-01

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