AU2003213420A1 - Semiconductor device and method for manufacturing semiconductor device - Google Patents
Semiconductor device and method for manufacturing semiconductor deviceInfo
- Publication number
- AU2003213420A1 AU2003213420A1 AU2003213420A AU2003213420A AU2003213420A1 AU 2003213420 A1 AU2003213420 A1 AU 2003213420A1 AU 2003213420 A AU2003213420 A AU 2003213420A AU 2003213420 A AU2003213420 A AU 2003213420A AU 2003213420 A1 AU2003213420 A1 AU 2003213420A1
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor device
- manufacturing
- manufacturing semiconductor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/JP2003/003198 WO2004084291A1 (en) | 2003-03-17 | 2003-03-17 | Semiconductor device and method for manufacturing semiconductor device |
Publications (1)
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AU2003213420A1 true AU2003213420A1 (en) | 2004-10-11 |
Family
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Family Applications (1)
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AU2003213420A Abandoned AU2003213420A1 (en) | 2003-03-17 | 2003-03-17 | Semiconductor device and method for manufacturing semiconductor device |
Country Status (6)
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US (2) | US7410812B2 (en) |
EP (1) | EP1605500A4 (en) |
JP (1) | JP4005602B2 (en) |
CN (1) | CN100352017C (en) |
AU (1) | AU2003213420A1 (en) |
WO (1) | WO2004084291A1 (en) |
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JP2005191482A (en) * | 2003-12-26 | 2005-07-14 | Semiconductor Leading Edge Technologies Inc | Semiconductor device and its manufacturing method |
JP2006278376A (en) * | 2005-03-28 | 2006-10-12 | Renesas Technology Corp | Semiconductor device and manufacturing method thereof |
JP4509839B2 (en) * | 2005-03-29 | 2010-07-21 | 東京エレクトロン株式会社 | Substrate processing method |
KR101126650B1 (en) * | 2008-10-31 | 2012-03-26 | 캐논 아네르바 가부시키가이샤 | Method of Manufacturing Dielectric Film |
KR101052587B1 (en) | 2008-10-31 | 2011-07-29 | 캐논 아네르바 가부시키가이샤 | Dielectric Films and Semiconductor Devices Using Dielectric Films |
US8476155B1 (en) * | 2010-07-14 | 2013-07-02 | Samsung Electronics Co., Ltd. | Formation of a high-K crystalline dielectric composition |
US9123530B2 (en) * | 2011-03-23 | 2015-09-01 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus |
US11563079B2 (en) * | 2020-01-08 | 2023-01-24 | Taiwan Semiconductor Manufacturing Company Ltd. | Metal insulator metal (MIM) structure and manufacturing method thereof |
Family Cites Families (15)
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FR2766211B1 (en) | 1997-07-15 | 1999-10-15 | France Telecom | METHOD FOR DEPOSITING A DIELECTRIC LAYER OF Ta2O5 |
TW457555B (en) | 1998-03-09 | 2001-10-01 | Siemens Ag | Surface passivation using silicon oxynitride |
KR100356473B1 (en) | 1999-12-29 | 2002-10-18 | 주식회사 하이닉스반도체 | Method of forming a aluminum oxide thin film in a semiconductor device |
US6319766B1 (en) * | 2000-02-22 | 2001-11-20 | Applied Materials, Inc. | Method of tantalum nitride deposition by tantalum oxide densification |
JP2001274378A (en) | 2000-03-28 | 2001-10-05 | Mitsubishi Electric Corp | Semiconductor device |
US6444592B1 (en) * | 2000-06-20 | 2002-09-03 | International Business Machines Corporation | Interfacial oxidation process for high-k gate dielectric process integration |
JP2002289615A (en) * | 2001-03-26 | 2002-10-04 | Tokyo Electron Ltd | Method and apparatus for forming thin film |
US6642131B2 (en) * | 2001-06-21 | 2003-11-04 | Matsushita Electric Industrial Co., Ltd. | Method of forming a silicon-containing metal-oxide gate dielectric by depositing a high dielectric constant film on a silicon substrate and diffusing silicon from the substrate into the high dielectric constant film |
JP3773448B2 (en) * | 2001-06-21 | 2006-05-10 | 松下電器産業株式会社 | Semiconductor device |
KR20030018134A (en) | 2001-08-27 | 2003-03-06 | 한국전자통신연구원 | Method of forming an insulation layer of a semiconductor device for controlling the composition and the doping concentration |
US6806145B2 (en) * | 2001-08-31 | 2004-10-19 | Asm International, N.V. | Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer |
US6720259B2 (en) * | 2001-10-02 | 2004-04-13 | Genus, Inc. | Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition |
KR20040008527A (en) * | 2002-07-18 | 2004-01-31 | 주식회사 하이닉스반도체 | Method of semiconductor device |
US6762114B1 (en) * | 2002-12-31 | 2004-07-13 | Texas Instruments Incorporated | Methods for transistor gate fabrication and for reducing high-k gate dielectric roughness |
US6884685B2 (en) * | 2003-02-14 | 2005-04-26 | Freescale Semiconductors, Inc. | Radical oxidation and/or nitridation during metal oxide layer deposition process |
-
2003
- 2003-03-17 JP JP2004569555A patent/JP4005602B2/en not_active Expired - Fee Related
- 2003-03-17 CN CNB038205173A patent/CN100352017C/en not_active Expired - Fee Related
- 2003-03-17 AU AU2003213420A patent/AU2003213420A1/en not_active Abandoned
- 2003-03-17 EP EP03708659A patent/EP1605500A4/en not_active Withdrawn
- 2003-03-17 WO PCT/JP2003/003198 patent/WO2004084291A1/en not_active Application Discontinuation
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2005
- 2005-03-25 US US11/089,503 patent/US7410812B2/en not_active Expired - Fee Related
-
2008
- 2008-07-03 US US12/216,408 patent/US7605436B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP4005602B2 (en) | 2007-11-07 |
JPWO2004084291A1 (en) | 2006-06-29 |
EP1605500A4 (en) | 2007-03-21 |
US20050167768A1 (en) | 2005-08-04 |
WO2004084291A1 (en) | 2004-09-30 |
EP1605500A1 (en) | 2005-12-14 |
US7410812B2 (en) | 2008-08-12 |
US7605436B2 (en) | 2009-10-20 |
CN100352017C (en) | 2007-11-28 |
US20080265341A1 (en) | 2008-10-30 |
CN1679151A (en) | 2005-10-05 |
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MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |