SG170667A1 - Substrate holder and clipping device - Google Patents

Substrate holder and clipping device

Info

Publication number
SG170667A1
SG170667A1 SG201006689-2A SG2010066892A SG170667A1 SG 170667 A1 SG170667 A1 SG 170667A1 SG 2010066892 A SG2010066892 A SG 2010066892A SG 170667 A1 SG170667 A1 SG 170667A1
Authority
SG
Singapore
Prior art keywords
substrate
support
clipping
substrate holder
clipping device
Prior art date
Application number
SG201006689-2A
Other languages
English (en)
Inventor
Teddy Besnard
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG170667A1 publication Critical patent/SG170667A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG201006689-2A 2009-11-05 2010-09-15 Substrate holder and clipping device SG170667A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP09290838A EP2320454A1 (de) 2009-11-05 2009-11-05 Substrathalter und Klammervorrichtung

Publications (1)

Publication Number Publication Date
SG170667A1 true SG170667A1 (en) 2011-05-30

Family

ID=41527821

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201006689-2A SG170667A1 (en) 2009-11-05 2010-09-15 Substrate holder and clipping device

Country Status (6)

Country Link
US (1) US20110101249A1 (de)
EP (1) EP2320454A1 (de)
JP (1) JP2011103447A (de)
KR (1) KR20110049664A (de)
CN (1) CN102104016A (de)
SG (1) SG170667A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8044374B2 (en) * 2009-06-30 2011-10-25 Twin Creeks Technologies, Inc. Ion implantation apparatus
CN102522355A (zh) * 2011-12-04 2012-06-27 华东光电集成器件研究所 一种衬底组装装置
FR2988516B1 (fr) 2012-03-23 2014-03-07 Soitec Silicon On Insulator Procede d'implantation de fragilisation de substrats ameliore
CN103668102B (zh) * 2012-09-09 2015-12-09 亚智科技股份有限公司 用于化学沉积设备的夹固装置
CN106645993A (zh) * 2015-11-04 2017-05-10 神讯电脑(昆山)有限公司 天线检测系统及方法
CN105826229A (zh) * 2016-01-05 2016-08-03 天津华海清科机电科技有限公司 晶圆夹持机构
CN105609462A (zh) * 2016-01-05 2016-05-25 天津华海清科机电科技有限公司 晶圆夹持机构
CN105470192A (zh) * 2016-01-05 2016-04-06 天津华海清科机电科技有限公司 晶圆夹持机构
TWI738855B (zh) * 2016-09-08 2021-09-11 日商荏原製作所股份有限公司 基板固持器、鍍覆裝置、基板固持器之製造方法、以及基板保持方法
CN109244032A (zh) * 2018-10-12 2019-01-18 苏州晋宇达实业股份有限公司 一种离子注入机的硅片公转盘
JP7213787B2 (ja) * 2018-12-18 2023-01-27 芝浦メカトロニクス株式会社 成膜装置

Family Cites Families (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169233A (en) * 1978-02-24 1979-09-25 Rockwell International Corporation High performance CMOS sense amplifier
KR100213602B1 (ko) * 1988-05-13 1999-08-02 가나이 쓰도무 다이나믹형 반도체 기억장치
US5028810A (en) * 1989-07-13 1991-07-02 Intel Corporation Four quadrant synapse cell employing single column summing line
JPH055756U (ja) * 1991-07-06 1993-01-26 株式会社芝浦製作所 基板搬送装置
JP2717740B2 (ja) * 1991-08-30 1998-02-25 三菱電機株式会社 半導体集積回路装置
EP0836194B1 (de) * 1992-03-30 2000-05-24 Mitsubishi Denki Kabushiki Kaisha Halbleiteranordnung
US5325054A (en) * 1992-07-07 1994-06-28 Texas Instruments Incorporated Method and system for screening reliability of semiconductor circuits
US5306530A (en) * 1992-11-23 1994-04-26 Associated Universities, Inc. Method for producing high quality thin layer films on substrates
JPH06252081A (ja) * 1993-03-01 1994-09-09 Nippon Steel Corp ウェハ固定装置
JP3488730B2 (ja) * 1993-11-05 2004-01-19 株式会社ルネサステクノロジ 半導体集積回路装置
US5455791A (en) * 1994-06-01 1995-10-03 Zaleski; Andrzei Method for erasing data in EEPROM devices on SOI substrates and device therefor
JP3003088B2 (ja) * 1994-06-10 2000-01-24 住友イートンノバ株式会社 イオン注入装置
JP3549602B2 (ja) * 1995-01-12 2004-08-04 株式会社ルネサステクノロジ 半導体記憶装置
JP3288554B2 (ja) * 1995-05-29 2002-06-04 株式会社日立製作所 イオン注入装置及びイオン注入方法
JPH0982814A (ja) * 1995-07-10 1997-03-28 Denso Corp 半導体集積回路装置及びその製造方法
US6787844B2 (en) * 1995-09-29 2004-09-07 Nippon Steel Corporation Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same
JPH10208484A (ja) * 1997-01-29 1998-08-07 Mitsubishi Electric Corp 半導体記憶装置のデータ読出回路及び半導体記憶装置
US5889293A (en) * 1997-04-04 1999-03-30 International Business Machines Corporation Electrical contact to buried SOI structures
EP0948806A2 (de) * 1997-10-03 1999-10-13 Koninklijke Philips Electronics N.V. Halter für ein halbleitersubstrat und herstellungsverfahren einer halbleiteranordnung mit einem solchen halter
JP3699823B2 (ja) * 1998-05-19 2005-09-28 株式会社東芝 半導体装置
US6072217A (en) * 1998-06-11 2000-06-06 Sun Microsystems, Inc. Tunable threshold SOI device using isolated well structure for back gate
DE19829580A1 (de) * 1998-07-02 2000-01-05 Bosch Gmbh Robert Vorrichtung zur mechanischen Ausrichtung eines Trägersubstrats für elektronische Schaltungen
US6501070B1 (en) * 1998-07-13 2002-12-31 Newport Corporation Pod load interface equipment adapted for implementation in a fims system
JP2000100895A (ja) * 1998-09-18 2000-04-07 Nikon Corp 基板の搬送装置、基板の保持装置、及び基板処理装置
US6826730B2 (en) * 1998-12-15 2004-11-30 Texas Instruments Incorporated System and method for controlling current in an integrated circuit
JP2000183139A (ja) * 1998-12-17 2000-06-30 Hitachi Ltd イオン注入装置
US6393694B2 (en) * 1999-04-23 2002-05-28 Koninklijke Philips Electronics N.V. Gripping device
US6372600B1 (en) * 1999-08-30 2002-04-16 Agere Systems Guardian Corp. Etch stops and alignment marks for bonded wafers
US6476462B2 (en) * 1999-12-28 2002-11-05 Texas Instruments Incorporated MOS-type semiconductor device and method for making same
US6417697B2 (en) * 2000-02-02 2002-07-09 Broadcom Corporation Circuit technique for high speed low power data transfer bus
US6300218B1 (en) * 2000-05-08 2001-10-09 International Business Machines Corporation Method for patterning a buried oxide thickness for a separation by implanted oxygen (simox) process
JP2002164544A (ja) * 2000-11-28 2002-06-07 Sony Corp 半導体装置
US6614190B2 (en) * 2001-01-31 2003-09-02 Hitachi, Ltd. Ion implanter
JP3982218B2 (ja) * 2001-02-07 2007-09-26 ソニー株式会社 半導体装置およびその製造方法
JP3884266B2 (ja) * 2001-02-19 2007-02-21 株式会社東芝 半導体メモリ装置及びその製造方法
US6611023B1 (en) * 2001-05-01 2003-08-26 Advanced Micro Devices, Inc. Field effect transistor with self alligned double gate and method of forming same
US6759282B2 (en) * 2001-06-12 2004-07-06 International Business Machines Corporation Method and structure for buried circuits and devices
US6498057B1 (en) * 2002-03-07 2002-12-24 International Business Machines Corporation Method for implementing SOI transistor source connections using buried dual rail distribution
US6838723B2 (en) * 2002-08-29 2005-01-04 Micron Technology, Inc. Merged MOS-bipolar capacitor memory cell
US7710771B2 (en) * 2002-11-20 2010-05-04 The Regents Of The University Of California Method and apparatus for capacitorless double-gate storage
JP2004179506A (ja) * 2002-11-28 2004-06-24 Seiko Epson Corp Soi構造を有する半導体基板及びその製造方法及び半導体装置
US7030436B2 (en) * 2002-12-04 2006-04-18 Micron Technology, Inc. Embedded DRAM gain memory cell having MOS transistor body provided with a bi-polar transistor charge injecting means
JP2004303499A (ja) * 2003-03-31 2004-10-28 Hitachi High-Technologies Corp イオン注入装置およびイオン注入方法
JP4077381B2 (ja) * 2003-08-29 2008-04-16 株式会社東芝 半導体集積回路装置
US6965143B2 (en) * 2003-10-10 2005-11-15 Advanced Micro Devices, Inc. Recess channel flash architecture for reduced short channel effect
JP2005158952A (ja) * 2003-11-25 2005-06-16 Toshiba Corp 半導体装置及びその製造方法
US7109532B1 (en) * 2003-12-23 2006-09-19 Lee Zachary K High Ion/Ioff SOI MOSFET using body voltage control
US20050255666A1 (en) * 2004-05-11 2005-11-17 Miradia Inc. Method and structure for aligning mechanical based device to integrated circuits
US7112997B1 (en) * 2004-05-19 2006-09-26 Altera Corporation Apparatus and methods for multi-gate silicon-on-insulator transistors
JP4795653B2 (ja) * 2004-06-15 2011-10-19 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7196921B2 (en) * 2004-07-19 2007-03-27 Silicon Storage Technology, Inc. High-speed and low-power differential non-volatile content addressable memory cell and array
US7190616B2 (en) * 2004-07-19 2007-03-13 Micron Technology, Inc. In-service reconfigurable DRAM and flash memory device
US7560361B2 (en) * 2004-08-12 2009-07-14 International Business Machines Corporation Method of forming gate stack for semiconductor electronic device
KR100663359B1 (ko) * 2005-03-31 2007-01-02 삼성전자주식회사 리세스 채널 트랜지스터 구조를 갖는 단일 트랜지스터플로팅 바디 디램 셀 및 그 제조방법
JP2006310709A (ja) * 2005-05-02 2006-11-09 Hitachi Plant Technologies Ltd 半導体ウェハ保持装置及び方法
US20060267064A1 (en) * 2005-05-31 2006-11-30 Infineon Technologies Ag Semiconductor memory device
US7274618B2 (en) * 2005-06-24 2007-09-25 Monolithic System Technology, Inc. Word line driver for DRAM embedded in a logic process
JP4967264B2 (ja) * 2005-07-11 2012-07-04 株式会社日立製作所 半導体装置
JP4800700B2 (ja) * 2005-08-01 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いた半導体集積回路
US7314794B2 (en) * 2005-08-08 2008-01-01 International Business Machines Corporation Low-cost high-performance planar back-gate CMOS
JP4413841B2 (ja) * 2005-10-03 2010-02-10 株式会社東芝 半導体記憶装置及びその製造方法
JP4822791B2 (ja) * 2005-10-04 2011-11-24 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP5054919B2 (ja) * 2005-12-20 2012-10-24 ルネサスエレクトロニクス株式会社 半導体集積回路装置
KR100735613B1 (ko) * 2006-01-11 2007-07-04 삼성전자주식회사 이온주입설비의 디스크 어셈블리
US7304903B2 (en) * 2006-01-23 2007-12-04 Purdue Research Foundation Sense amplifier circuit
JP4762036B2 (ja) * 2006-04-14 2011-08-31 株式会社東芝 半導体装置
WO2007125775A1 (ja) * 2006-04-24 2007-11-08 Panasonic Corporation 受信装置、それを用いた電子機器、及び受信方法
US7494902B2 (en) * 2006-06-23 2009-02-24 Interuniversitair Microelektronica Centrum Vzw (Imec) Method of fabricating a strained multi-gate transistor
KR100843055B1 (ko) * 2006-08-17 2008-07-01 주식회사 하이닉스반도체 플래쉬 메모리 소자 및 그의 제조방법
US7560344B2 (en) * 2006-11-15 2009-07-14 Samsung Electronics Co., Ltd. Semiconductor device having a pair of fins and method of manufacturing the same
JP2008130670A (ja) * 2006-11-17 2008-06-05 Seiko Epson Corp 半導体装置、論理回路および電子機器
JP5057430B2 (ja) * 2006-12-18 2012-10-24 ルネサスエレクトロニクス株式会社 半導体集積回路とその製造方法
JP4869088B2 (ja) * 2007-01-22 2012-02-01 株式会社東芝 半導体記憶装置及びその書き込み方法
JP5019436B2 (ja) * 2007-02-22 2012-09-05 ルネサスエレクトロニクス株式会社 半導体集積回路
JP5594927B2 (ja) * 2007-04-11 2014-09-24 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置
FR2915024A1 (fr) * 2007-04-12 2008-10-17 St Microelectronics Crolles 2 Procede de fabrication permettant l'homogeneisation de l'environnement de transistors et dispositif associe
EP2015362A1 (de) * 2007-06-04 2009-01-14 STMicroelectronics (Crolles 2) SAS Halbleitermatrix und deren Herstellungsverfahren
US7449922B1 (en) * 2007-06-15 2008-11-11 Arm Limited Sensing circuitry and method of detecting a change in voltage on at least one input line
US7759714B2 (en) * 2007-06-26 2010-07-20 Hitachi, Ltd. Semiconductor device
FR2919112A1 (fr) * 2007-07-16 2009-01-23 St Microelectronics Crolles 2 Circuit integre comprenant un transistor et un condensateur et procede de fabrication
JP5035345B2 (ja) * 2007-08-30 2012-09-26 富士通セミコンダクター株式会社 イオン注入装置、基板クランプ機構、及びイオン注入方法
KR100884344B1 (ko) * 2007-10-10 2009-02-18 주식회사 하이닉스반도체 비대칭 소스/드레인 접합을 갖는 불휘발성 메모리소자 및그 제조방법
US20090101940A1 (en) * 2007-10-19 2009-04-23 Barrows Corey K Dual gate fet structures for flexible gate array design methodologies
DE102007052097B4 (de) * 2007-10-31 2010-10-28 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung eines SOI-Bauelements mit einer Substratdiode
TWI455239B (zh) * 2008-03-14 2014-10-01 Lam Res Corp 凸輪鎖電極夾
JP6053250B2 (ja) * 2008-06-12 2016-12-27 ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. 半導体装置
US8113076B2 (en) * 2008-08-07 2012-02-14 Itt Manufacturing Enterprises, Inc. Mechanical positioner for reclining seat assembly
US8012814B2 (en) * 2008-08-08 2011-09-06 International Business Machines Corporation Method of forming a high performance fet and a high voltage fet on a SOI substrate
KR101623958B1 (ko) * 2008-10-01 2016-05-25 삼성전자주식회사 인버터 및 그의 동작방법과 인버터를 포함하는 논리회로
KR101522400B1 (ko) * 2008-11-10 2015-05-21 삼성전자주식회사 인버터 및 그를 포함하는 논리소자

Also Published As

Publication number Publication date
US20110101249A1 (en) 2011-05-05
KR20110049664A (ko) 2011-05-12
JP2011103447A (ja) 2011-05-26
CN102104016A (zh) 2011-06-22
EP2320454A1 (de) 2011-05-11

Similar Documents

Publication Publication Date Title
SG170667A1 (en) Substrate holder and clipping device
GB201309936D0 (en) Holding device for a portable communication device
WO2010019218A3 (en) Electrical contacts for use with vacuum deposition sources
MX2017007705A (es) Contacto de receptaculo.
TWM390564U (en) Electrical contact
MX2014002116A (es) Mensula.
GB201212714D0 (en) Keyswitch
BR112013013521A2 (pt) placa base para um utensílio de ostomia, utensílio de ostomia, e, dispositivo de suporte convexo
BR112014008221A2 (pt) atuador de bobina para um dispositivo de comutação, dispositivo de comutação, e comutador relacionados
MX355560B (es) Unidad de control para controlar aparato electrico.
UA101260C2 (ru) Держатель предохранителя, в частности, для блочных розеток и электрического оборудования в целом
EP2492142A3 (de) Schaltervorrichtung für eine Fahrtrichtungsanzeige
MY165420A (en) One-touch fitting device for fan
MX2013010305A (es) Cubierta flexible para contactos de una unidad que se enchufa o que se puede retirar.
WO2010138931A3 (en) Mechanical isolation for mems electrical contacts
TWM402480U (en) Storage device fixing mechanism
MY153473A (en) Method and system for cooling resin-sealed substrate, system for conveying such substrate, and resin-sealing system
PT2335081T (pt) Dispositivo para a colocação e conexão de contactos de verificação
MX2012003724A (es) Dispositivo de sujecion.
TW200717000A (en) A device support, and a handler including the device support
TW200642200A (en) Connector which can be reduced in size
NL1035213A1 (nl) Basisplaat voor ingebouwde elektrische inrichtingen.
IN2014CN02998A (de)
GB2504445A (en) Coupling for use with a holder
EP3075742A4 (de) Hochselektiver kontaktaktivierungsinhibitor auf der basis von infestin-4