NO315399B1 - Minnecelle - Google Patents
Minnecelle Download PDFInfo
- Publication number
- NO315399B1 NO315399B1 NO20021057A NO20021057A NO315399B1 NO 315399 B1 NO315399 B1 NO 315399B1 NO 20021057 A NO20021057 A NO 20021057A NO 20021057 A NO20021057 A NO 20021057A NO 315399 B1 NO315399 B1 NO 315399B1
- Authority
- NO
- Norway
- Prior art keywords
- memory
- polymer
- memory cell
- electrodes
- ferroelectric
- Prior art date
Links
- 230000015654 memory Effects 0.000 title claims abstract description 117
- 239000000463 material Substances 0.000 claims abstract description 89
- 239000000203 mixture Substances 0.000 claims abstract description 13
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 12
- 239000002131 composite material Substances 0.000 claims abstract description 3
- 230000010287 polarization Effects 0.000 claims description 29
- 229920000642 polymer Polymers 0.000 claims description 25
- 239000002861 polymer material Substances 0.000 claims description 21
- 239000004020 conductor Substances 0.000 claims description 16
- 230000005684 electric field Effects 0.000 claims description 12
- 230000003750 conditioning effect Effects 0.000 claims description 10
- 239000007769 metal material Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 8
- 229920001577 copolymer Polymers 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 4
- 229920001519 homopolymer Polymers 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 239000002322 conducting polymer Substances 0.000 abstract description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 7
- 239000010936 titanium Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000013500 data storage Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 239000013590 bulk material Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- BTGZYWWSOPEHMM-UHFFFAOYSA-N [O].[Cu].[Y].[Ba] Chemical compound [O].[Cu].[Y].[Ba] BTGZYWWSOPEHMM-UHFFFAOYSA-N 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- PACGUUNWTMTWCF-UHFFFAOYSA-N [Sr].[La] Chemical compound [Sr].[La] PACGUUNWTMTWCF-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- -1 lanthanum modified bismuth Chemical class 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920000131 polyvinylidene Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H10D48/381—Multistable devices; Devices having two or more distinct operating states
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- External Artificial Organs (AREA)
- Medicinal Preparation (AREA)
- Laminated Bodies (AREA)
- Eye Examination Apparatus (AREA)
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20021057A NO315399B1 (no) | 2002-03-01 | 2002-03-01 | Minnecelle |
| ES03707258T ES2246042T3 (es) | 2002-03-01 | 2003-02-11 | Celda de memoria. |
| DK03707258T DK1481398T3 (da) | 2002-03-01 | 2003-02-11 | Datalagercelle |
| US10/504,860 US7126176B2 (en) | 2002-03-01 | 2003-02-11 | Memory cell |
| DE60301060T DE60301060T2 (de) | 2002-03-01 | 2003-02-11 | Speicherzelle |
| EP03707258A EP1481398B1 (de) | 2002-03-01 | 2003-02-11 | Speicherzelle |
| AT03707258T ATE300087T1 (de) | 2002-03-01 | 2003-02-11 | Speicherzelle |
| JP2003573646A JP4054311B2 (ja) | 2002-03-01 | 2003-02-11 | メモリセル |
| PCT/NO2003/000052 WO2003075279A1 (en) | 2002-03-01 | 2003-02-11 | A memory cell |
| AU2003208672A AU2003208672A1 (en) | 2002-03-01 | 2003-02-11 | A memory cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20021057A NO315399B1 (no) | 2002-03-01 | 2002-03-01 | Minnecelle |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO20021057D0 NO20021057D0 (no) | 2002-03-01 |
| NO20021057A NO20021057A (no) | 2003-08-25 |
| NO315399B1 true NO315399B1 (no) | 2003-08-25 |
Family
ID=19913385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20021057A NO315399B1 (no) | 2002-03-01 | 2002-03-01 | Minnecelle |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US7126176B2 (de) |
| EP (1) | EP1481398B1 (de) |
| JP (1) | JP4054311B2 (de) |
| AT (1) | ATE300087T1 (de) |
| AU (1) | AU2003208672A1 (de) |
| DE (1) | DE60301060T2 (de) |
| DK (1) | DK1481398T3 (de) |
| ES (1) | ES2246042T3 (de) |
| NO (1) | NO315399B1 (de) |
| WO (1) | WO2003075279A1 (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6920060B2 (en) | 2002-08-14 | 2005-07-19 | Intel Corporation | Memory device, circuits and methods for operating a memory device |
| CN1898747B (zh) * | 2003-12-22 | 2010-06-16 | 皇家飞利浦电子股份有限公司 | 利用有机双极半导体的非易失性铁电薄膜设备和所述设备的制备方法 |
| US7205595B2 (en) * | 2004-03-31 | 2007-04-17 | Intel Corporation | Polymer memory device with electron traps |
| NO20041733L (no) * | 2004-04-28 | 2005-10-31 | Thin Film Electronics Asa | Organisk elektronisk krets med funksjonelt mellomsjikt og fremgangsmate til dens fremstilling. |
| DE102004057790A1 (de) * | 2004-11-30 | 2006-06-08 | Infineon Technologies Ag | Hybrid-Silizium-molekulare Speicherzelle mit hoher Speicherdichte |
| SG157268A1 (en) * | 2008-05-30 | 2009-12-29 | Sony Corp | Ferroelectric polymer |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3602887A1 (de) | 1986-01-31 | 1987-08-06 | Bayer Ag | Nichtfluechtiger elektronischer speicher |
| US5270967A (en) * | 1991-01-16 | 1993-12-14 | National Semiconductor Corporation | Refreshing ferroelectric capacitors |
| JPH1022470A (ja) | 1996-07-02 | 1998-01-23 | Hitachi Ltd | 半導体記憶装置及びその製造方法 |
| NO972803D0 (no) * | 1997-06-17 | 1997-06-17 | Opticom As | Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte |
| NO309500B1 (no) | 1997-08-15 | 2001-02-05 | Thin Film Electronics Asa | Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme |
| JP2000068465A (ja) * | 1998-08-21 | 2000-03-03 | Nec Corp | 半導体装置及びその形成方法 |
| NO312699B1 (no) | 2000-07-07 | 2002-06-17 | Thin Film Electronics Asa | Adressering av minnematrise |
| NO20005980L (no) * | 2000-11-27 | 2002-05-28 | Thin Film Electronics Ab | Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling |
| NO314524B1 (no) * | 2001-11-30 | 2003-03-31 | Thin Film Electronics Asa | Fremgangsmåte til lesing av celler i en passiv matriseadresserbar innretning, samt innretning for utförelse av fremgangsmåten |
-
2002
- 2002-03-01 NO NO20021057A patent/NO315399B1/no unknown
-
2003
- 2003-02-11 AU AU2003208672A patent/AU2003208672A1/en not_active Abandoned
- 2003-02-11 ES ES03707258T patent/ES2246042T3/es not_active Expired - Lifetime
- 2003-02-11 DK DK03707258T patent/DK1481398T3/da active
- 2003-02-11 DE DE60301060T patent/DE60301060T2/de not_active Expired - Fee Related
- 2003-02-11 AT AT03707258T patent/ATE300087T1/de not_active IP Right Cessation
- 2003-02-11 JP JP2003573646A patent/JP4054311B2/ja not_active Expired - Fee Related
- 2003-02-11 WO PCT/NO2003/000052 patent/WO2003075279A1/en not_active Ceased
- 2003-02-11 EP EP03707258A patent/EP1481398B1/de not_active Expired - Lifetime
- 2003-02-11 US US10/504,860 patent/US7126176B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1481398A1 (de) | 2004-12-01 |
| EP1481398B1 (de) | 2005-07-20 |
| NO20021057D0 (no) | 2002-03-01 |
| WO2003075279A1 (en) | 2003-09-12 |
| DE60301060T2 (de) | 2006-06-01 |
| JP4054311B2 (ja) | 2008-02-27 |
| DK1481398T3 (da) | 2005-10-31 |
| US20050151176A1 (en) | 2005-07-14 |
| US7126176B2 (en) | 2006-10-24 |
| AU2003208672A1 (en) | 2003-09-16 |
| NO20021057A (no) | 2003-08-25 |
| JP2005519463A (ja) | 2005-06-30 |
| ATE300087T1 (de) | 2005-08-15 |
| DE60301060D1 (de) | 2005-08-25 |
| ES2246042T3 (es) | 2006-02-01 |
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