NO20021057D0 - Minnecelle - Google Patents

Minnecelle

Info

Publication number
NO20021057D0
NO20021057D0 NO20021057A NO20021057A NO20021057D0 NO 20021057 D0 NO20021057 D0 NO 20021057D0 NO 20021057 A NO20021057 A NO 20021057A NO 20021057 A NO20021057 A NO 20021057A NO 20021057 D0 NO20021057 D0 NO 20021057D0
Authority
NO
Norway
Prior art keywords
memory cell
polymeric
memory material
memory
ferroelectret
Prior art date
Application number
NO20021057A
Other languages
English (en)
Other versions
NO20021057A (no
NO315399B1 (no
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Priority to NO20021057A priority Critical patent/NO315399B1/no
Publication of NO20021057D0 publication Critical patent/NO20021057D0/no
Priority to US10/504,860 priority patent/US7126176B2/en
Priority to PCT/NO2003/000052 priority patent/WO2003075279A1/en
Priority to JP2003573646A priority patent/JP4054311B2/ja
Priority to DK03707258T priority patent/DK1481398T3/da
Priority to AT03707258T priority patent/ATE300087T1/de
Priority to AU2003208672A priority patent/AU2003208672A1/en
Priority to DE60301060T priority patent/DE60301060T2/de
Priority to ES03707258T priority patent/ES2246042T3/es
Priority to EP03707258A priority patent/EP1481398B1/en
Publication of NO20021057A publication Critical patent/NO20021057A/no
Publication of NO315399B1 publication Critical patent/NO315399B1/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Laminated Bodies (AREA)
  • Medicinal Preparation (AREA)
  • Eye Examination Apparatus (AREA)
  • External Artificial Organs (AREA)
NO20021057A 2002-03-01 2002-03-01 Minnecelle NO315399B1 (no)

Priority Applications (10)

Application Number Priority Date Filing Date Title
NO20021057A NO315399B1 (no) 2002-03-01 2002-03-01 Minnecelle
EP03707258A EP1481398B1 (en) 2002-03-01 2003-02-11 A memory cell
DK03707258T DK1481398T3 (da) 2002-03-01 2003-02-11 Datalagercelle
PCT/NO2003/000052 WO2003075279A1 (en) 2002-03-01 2003-02-11 A memory cell
JP2003573646A JP4054311B2 (ja) 2002-03-01 2003-02-11 メモリセル
US10/504,860 US7126176B2 (en) 2002-03-01 2003-02-11 Memory cell
AT03707258T ATE300087T1 (de) 2002-03-01 2003-02-11 Speicherzelle
AU2003208672A AU2003208672A1 (en) 2002-03-01 2003-02-11 A memory cell
DE60301060T DE60301060T2 (de) 2002-03-01 2003-02-11 Speicherzelle
ES03707258T ES2246042T3 (es) 2002-03-01 2003-02-11 Celda de memoria.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20021057A NO315399B1 (no) 2002-03-01 2002-03-01 Minnecelle

Publications (3)

Publication Number Publication Date
NO20021057D0 true NO20021057D0 (no) 2002-03-01
NO20021057A NO20021057A (no) 2003-08-25
NO315399B1 NO315399B1 (no) 2003-08-25

Family

ID=19913385

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20021057A NO315399B1 (no) 2002-03-01 2002-03-01 Minnecelle

Country Status (10)

Country Link
US (1) US7126176B2 (no)
EP (1) EP1481398B1 (no)
JP (1) JP4054311B2 (no)
AT (1) ATE300087T1 (no)
AU (1) AU2003208672A1 (no)
DE (1) DE60301060T2 (no)
DK (1) DK1481398T3 (no)
ES (1) ES2246042T3 (no)
NO (1) NO315399B1 (no)
WO (1) WO2003075279A1 (no)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6920060B2 (en) * 2002-08-14 2005-07-19 Intel Corporation Memory device, circuits and methods for operating a memory device
JP2007523469A (ja) * 2003-12-22 2007-08-16 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 有機両極性半導体を使用する不揮発性強誘電体薄膜デバイス及びそのようなデバイスを処理するための方法
US7205595B2 (en) * 2004-03-31 2007-04-17 Intel Corporation Polymer memory device with electron traps
NO20041733L (no) * 2004-04-28 2005-10-31 Thin Film Electronics Asa Organisk elektronisk krets med funksjonelt mellomsjikt og fremgangsmate til dens fremstilling.
DE102004057790A1 (de) * 2004-11-30 2006-06-08 Infineon Technologies Ag Hybrid-Silizium-molekulare Speicherzelle mit hoher Speicherdichte
SG157268A1 (en) * 2008-05-30 2009-12-29 Sony Corp Ferroelectric polymer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3602887A1 (de) 1986-01-31 1987-08-06 Bayer Ag Nichtfluechtiger elektronischer speicher
US5270967A (en) * 1991-01-16 1993-12-14 National Semiconductor Corporation Refreshing ferroelectric capacitors
JPH1022470A (ja) 1996-07-02 1998-01-23 Hitachi Ltd 半導体記憶装置及びその製造方法
NO972803D0 (no) 1997-06-17 1997-06-17 Opticom As Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte
NO309500B1 (no) 1997-08-15 2001-02-05 Thin Film Electronics Asa Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme
JP2000068465A (ja) * 1998-08-21 2000-03-03 Nec Corp 半導体装置及びその形成方法
NO312699B1 (no) 2000-07-07 2002-06-17 Thin Film Electronics Asa Adressering av minnematrise
NO20005980L (no) * 2000-11-27 2002-05-28 Thin Film Electronics Ab Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling
NO314524B1 (no) * 2001-11-30 2003-03-31 Thin Film Electronics Asa Fremgangsmåte til lesing av celler i en passiv matriseadresserbar innretning, samt innretning for utförelse av fremgangsmåten

Also Published As

Publication number Publication date
DE60301060T2 (de) 2006-06-01
DK1481398T3 (da) 2005-10-31
NO20021057A (no) 2003-08-25
EP1481398B1 (en) 2005-07-20
ES2246042T3 (es) 2006-02-01
JP2005519463A (ja) 2005-06-30
NO315399B1 (no) 2003-08-25
WO2003075279A1 (en) 2003-09-12
DE60301060D1 (de) 2005-08-25
US20050151176A1 (en) 2005-07-14
US7126176B2 (en) 2006-10-24
AU2003208672A1 (en) 2003-09-16
EP1481398A1 (en) 2004-12-01
JP4054311B2 (ja) 2008-02-27
ATE300087T1 (de) 2005-08-15

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