DK1481398T3 - Datalagercelle - Google Patents
DatalagercelleInfo
- Publication number
- DK1481398T3 DK1481398T3 DK03707258T DK03707258T DK1481398T3 DK 1481398 T3 DK1481398 T3 DK 1481398T3 DK 03707258 T DK03707258 T DK 03707258T DK 03707258 T DK03707258 T DK 03707258T DK 1481398 T3 DK1481398 T3 DK 1481398T3
- Authority
- DK
- Denmark
- Prior art keywords
- data storage
- storage cell
- polymeric
- memory material
- memory
- Prior art date
Links
- 238000013500 data storage Methods 0.000 title 1
- 210000000352 storage cell Anatomy 0.000 title 1
- 239000000463 material Substances 0.000 abstract 4
- 239000002131 composite material Substances 0.000 abstract 1
- 239000002322 conducting polymer Substances 0.000 abstract 1
- 229920001940 conductive polymer Polymers 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Theoretical Computer Science (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Medicinal Preparation (AREA)
- External Artificial Organs (AREA)
- Eye Examination Apparatus (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20021057A NO315399B1 (no) | 2002-03-01 | 2002-03-01 | Minnecelle |
| PCT/NO2003/000052 WO2003075279A1 (en) | 2002-03-01 | 2003-02-11 | A memory cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK1481398T3 true DK1481398T3 (da) | 2005-10-31 |
Family
ID=19913385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK03707258T DK1481398T3 (da) | 2002-03-01 | 2003-02-11 | Datalagercelle |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US7126176B2 (da) |
| EP (1) | EP1481398B1 (da) |
| JP (1) | JP4054311B2 (da) |
| AT (1) | ATE300087T1 (da) |
| AU (1) | AU2003208672A1 (da) |
| DE (1) | DE60301060T2 (da) |
| DK (1) | DK1481398T3 (da) |
| ES (1) | ES2246042T3 (da) |
| NO (1) | NO315399B1 (da) |
| WO (1) | WO2003075279A1 (da) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6920060B2 (en) | 2002-08-14 | 2005-07-19 | Intel Corporation | Memory device, circuits and methods for operating a memory device |
| CN1898747B (zh) * | 2003-12-22 | 2010-06-16 | 皇家飞利浦电子股份有限公司 | 利用有机双极半导体的非易失性铁电薄膜设备和所述设备的制备方法 |
| US7205595B2 (en) * | 2004-03-31 | 2007-04-17 | Intel Corporation | Polymer memory device with electron traps |
| NO20041733L (no) * | 2004-04-28 | 2005-10-31 | Thin Film Electronics Asa | Organisk elektronisk krets med funksjonelt mellomsjikt og fremgangsmate til dens fremstilling. |
| DE102004057790A1 (de) * | 2004-11-30 | 2006-06-08 | Infineon Technologies Ag | Hybrid-Silizium-molekulare Speicherzelle mit hoher Speicherdichte |
| SG157268A1 (en) * | 2008-05-30 | 2009-12-29 | Sony Corp | Ferroelectric polymer |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3602887A1 (de) | 1986-01-31 | 1987-08-06 | Bayer Ag | Nichtfluechtiger elektronischer speicher |
| US5270967A (en) * | 1991-01-16 | 1993-12-14 | National Semiconductor Corporation | Refreshing ferroelectric capacitors |
| JPH1022470A (ja) | 1996-07-02 | 1998-01-23 | Hitachi Ltd | 半導体記憶装置及びその製造方法 |
| NO972803D0 (no) * | 1997-06-17 | 1997-06-17 | Opticom As | Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte |
| NO309500B1 (no) | 1997-08-15 | 2001-02-05 | Thin Film Electronics Asa | Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme |
| JP2000068465A (ja) * | 1998-08-21 | 2000-03-03 | Nec Corp | 半導体装置及びその形成方法 |
| NO312699B1 (no) | 2000-07-07 | 2002-06-17 | Thin Film Electronics Asa | Adressering av minnematrise |
| NO20005980L (no) * | 2000-11-27 | 2002-05-28 | Thin Film Electronics Ab | Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling |
| NO314524B1 (no) * | 2001-11-30 | 2003-03-31 | Thin Film Electronics Asa | Fremgangsmåte til lesing av celler i en passiv matriseadresserbar innretning, samt innretning for utförelse av fremgangsmåten |
-
2002
- 2002-03-01 NO NO20021057A patent/NO315399B1/no unknown
-
2003
- 2003-02-11 AU AU2003208672A patent/AU2003208672A1/en not_active Abandoned
- 2003-02-11 DE DE60301060T patent/DE60301060T2/de not_active Expired - Fee Related
- 2003-02-11 US US10/504,860 patent/US7126176B2/en not_active Expired - Fee Related
- 2003-02-11 DK DK03707258T patent/DK1481398T3/da active
- 2003-02-11 AT AT03707258T patent/ATE300087T1/de not_active IP Right Cessation
- 2003-02-11 ES ES03707258T patent/ES2246042T3/es not_active Expired - Lifetime
- 2003-02-11 WO PCT/NO2003/000052 patent/WO2003075279A1/en active IP Right Grant
- 2003-02-11 JP JP2003573646A patent/JP4054311B2/ja not_active Expired - Fee Related
- 2003-02-11 EP EP03707258A patent/EP1481398B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE60301060D1 (de) | 2005-08-25 |
| WO2003075279A1 (en) | 2003-09-12 |
| ATE300087T1 (de) | 2005-08-15 |
| US20050151176A1 (en) | 2005-07-14 |
| NO20021057A (no) | 2003-08-25 |
| DE60301060T2 (de) | 2006-06-01 |
| EP1481398B1 (en) | 2005-07-20 |
| EP1481398A1 (en) | 2004-12-01 |
| NO315399B1 (no) | 2003-08-25 |
| JP2005519463A (ja) | 2005-06-30 |
| AU2003208672A1 (en) | 2003-09-16 |
| ES2246042T3 (es) | 2006-02-01 |
| NO20021057D0 (no) | 2002-03-01 |
| JP4054311B2 (ja) | 2008-02-27 |
| US7126176B2 (en) | 2006-10-24 |
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