JP4054311B2 - メモリセル - Google Patents
メモリセル Download PDFInfo
- Publication number
- JP4054311B2 JP4054311B2 JP2003573646A JP2003573646A JP4054311B2 JP 4054311 B2 JP4054311 B2 JP 4054311B2 JP 2003573646 A JP2003573646 A JP 2003573646A JP 2003573646 A JP2003573646 A JP 2003573646A JP 4054311 B2 JP4054311 B2 JP 4054311B2
- Authority
- JP
- Japan
- Prior art keywords
- memory
- memory cell
- electrodes
- polymeric
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 claims abstract description 92
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 239000002131 composite material Substances 0.000 claims abstract description 3
- 230000010287 polarization Effects 0.000 claims description 25
- 229920000642 polymer Polymers 0.000 claims description 17
- 230000005684 electric field Effects 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 15
- 239000007769 metal material Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 239000002861 polymer material Substances 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 7
- 229920001577 copolymer Polymers 0.000 claims description 6
- 229920001519 homopolymer Polymers 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 4
- 230000005621 ferroelectricity Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 230000001747 exhibiting effect Effects 0.000 claims 2
- 239000011259 mixed solution Substances 0.000 claims 1
- 239000002322 conducting polymer Substances 0.000 abstract 1
- 230000003750 conditioning effect Effects 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 229910004121 SrRuO Inorganic materials 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000013500 data storage Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229920006112 polar polymer Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920000131 polyvinylidene Polymers 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- FCYVWWWTHPPJII-UHFFFAOYSA-N 2-methylidenepropanedinitrile Chemical compound N#CC(=C)C#N FCYVWWWTHPPJII-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000877463 Lanio Species 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- XHPLNGAABOJCMD-UHFFFAOYSA-N [Ba+2].[O-2].[Y+3] Chemical compound [Ba+2].[O-2].[Y+3] XHPLNGAABOJCMD-UHFFFAOYSA-N 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- PACGUUNWTMTWCF-UHFFFAOYSA-N [Sr].[La] Chemical compound [Sr].[La] PACGUUNWTMTWCF-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- -1 lanthanum modified bismuth Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Medicinal Preparation (AREA)
- Eye Examination Apparatus (AREA)
- Laminated Bodies (AREA)
- External Artificial Organs (AREA)
Description
Claims (12)
- 強誘電性またはエレクトレット性を有し、そして分極され得かつヒステリシスを示し得る重合体メモリ材料を含んで成り、該重合体メモリ材料が第一および第二電極に接触して与えられており、そして該重合体メモリ材料が少なくとも第一および第二重合体材料のブレンドであり、この場合前記第一重合体材料が強誘電体またはエレクトレット重合体材料であるメモリセルにおいて、各電極が高導電性材料の第一層および導電性重合体の第二層を含んで成る複合多層電極であり、その第二層は、該導電性重合体として絶縁性重合体と導電性重合体との混合溶液によって形成される異方性導電膜を含まず、そして、該導電性重合体は上記高導電性材料と上記重合体メモリ材料との間に接触層を形成していることを特徴とする上記のメモリセル。
- 第一重合体材料が共重合体であることを特徴とする、請求項1記載のメモリセル。
- 第二重合体材料が単独重合体であることを特徴とする、請求項1記載のメモリセル。
- 高導電性材料が金属材料であることを特徴とする請求項1記載のメモリセル。
- 電極の第一層と第二層との間にバリヤー層が与えられていることを特徴とする、請求項1記載のメモリセル。
- バリヤー層が金属材料の酸化物、窒化物または硼化物であることを特徴とする、高導電性材料が金属材料である請求項5記載のメモリセル。
- メモリ材料が電極間にサンドイッチ状にはさまれて与えられていることを特徴とする、請求項1記載のメモリセル。
- 電極が絶縁材料の橋の相対する表面に与えられ、第一電極が該絶縁橋を越えて延在していること、およびメモリ材料が第一および第二電極の露出表面上に与えられ、そして電極間に絶縁橋の側面を覆って延在していることを特徴とする、請求項1記載のメモリセル。
- メモリ材料および電極が、メモリセルが層状薄膜構造を構成するように薄膜の層として与えられていることを特徴とする、請求項1記載のメモリセル。
- 強誘電性またはエレクトレット性を有し、そして分極され得かつヒステリシスを示し得る重合体メモリ材料を含んで成り、該重合体メモリ材料が第一および第二電極に接触して与えられており、そして該重合体材料が少なくとも第一および第二重合体材料のブレンドであり、ここで前記第一重合体材料が強誘電体またはエレクトレット重合体材料であるメモリセルを使用前コンディショニングする方法であって、上記メモリ材料をいずれの方向にも分極させ得る電界を発生させる1つの電圧パルス系列の交番正負パルスを上記電極に印加し、そして該メモリ材料を該分極方向の多数の連続する反転に付すことによって特徴付けられる上記の方法。
- 受動マトリックス−アドレス指定可能強誘電体メモリデバイスまたは同エレクトレットメモリデバイスを製造するための請求項1記載のメモリセルの使用。
- 能動マトリックス−アドレス指定可能強誘電体メモリデバイスまたは同エレクトレットメモリデバイスを製造するための請求項1記載のメモリセルの使用。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20021057A NO315399B1 (no) | 2002-03-01 | 2002-03-01 | Minnecelle |
PCT/NO2003/000052 WO2003075279A1 (en) | 2002-03-01 | 2003-02-11 | A memory cell |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005519463A JP2005519463A (ja) | 2005-06-30 |
JP4054311B2 true JP4054311B2 (ja) | 2008-02-27 |
Family
ID=19913385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003573646A Expired - Fee Related JP4054311B2 (ja) | 2002-03-01 | 2003-02-11 | メモリセル |
Country Status (10)
Country | Link |
---|---|
US (1) | US7126176B2 (ja) |
EP (1) | EP1481398B1 (ja) |
JP (1) | JP4054311B2 (ja) |
AT (1) | ATE300087T1 (ja) |
AU (1) | AU2003208672A1 (ja) |
DE (1) | DE60301060T2 (ja) |
DK (1) | DK1481398T3 (ja) |
ES (1) | ES2246042T3 (ja) |
NO (1) | NO315399B1 (ja) |
WO (1) | WO2003075279A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6920060B2 (en) | 2002-08-14 | 2005-07-19 | Intel Corporation | Memory device, circuits and methods for operating a memory device |
CN1898747B (zh) * | 2003-12-22 | 2010-06-16 | 皇家飞利浦电子股份有限公司 | 利用有机双极半导体的非易失性铁电薄膜设备和所述设备的制备方法 |
US7205595B2 (en) * | 2004-03-31 | 2007-04-17 | Intel Corporation | Polymer memory device with electron traps |
NO20041733L (no) * | 2004-04-28 | 2005-10-31 | Thin Film Electronics Asa | Organisk elektronisk krets med funksjonelt mellomsjikt og fremgangsmate til dens fremstilling. |
DE102004057790A1 (de) * | 2004-11-30 | 2006-06-08 | Infineon Technologies Ag | Hybrid-Silizium-molekulare Speicherzelle mit hoher Speicherdichte |
SG157268A1 (en) * | 2008-05-30 | 2009-12-29 | Sony Corp | Ferroelectric polymer |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3602887A1 (de) | 1986-01-31 | 1987-08-06 | Bayer Ag | Nichtfluechtiger elektronischer speicher |
US5270967A (en) * | 1991-01-16 | 1993-12-14 | National Semiconductor Corporation | Refreshing ferroelectric capacitors |
JPH1022470A (ja) | 1996-07-02 | 1998-01-23 | Hitachi Ltd | 半導体記憶装置及びその製造方法 |
NO972803D0 (no) * | 1997-06-17 | 1997-06-17 | Opticom As | Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte |
NO309500B1 (no) * | 1997-08-15 | 2001-02-05 | Thin Film Electronics Asa | Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme |
JP2000068465A (ja) * | 1998-08-21 | 2000-03-03 | Nec Corp | 半導体装置及びその形成方法 |
NO312699B1 (no) | 2000-07-07 | 2002-06-17 | Thin Film Electronics Asa | Adressering av minnematrise |
NO20005980L (no) * | 2000-11-27 | 2002-05-28 | Thin Film Electronics Ab | Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling |
NO314524B1 (no) * | 2001-11-30 | 2003-03-31 | Thin Film Electronics Asa | Fremgangsmåte til lesing av celler i en passiv matriseadresserbar innretning, samt innretning for utförelse av fremgangsmåten |
-
2002
- 2002-03-01 NO NO20021057A patent/NO315399B1/no unknown
-
2003
- 2003-02-11 AT AT03707258T patent/ATE300087T1/de not_active IP Right Cessation
- 2003-02-11 AU AU2003208672A patent/AU2003208672A1/en not_active Abandoned
- 2003-02-11 DE DE60301060T patent/DE60301060T2/de not_active Expired - Fee Related
- 2003-02-11 US US10/504,860 patent/US7126176B2/en not_active Expired - Fee Related
- 2003-02-11 DK DK03707258T patent/DK1481398T3/da active
- 2003-02-11 ES ES03707258T patent/ES2246042T3/es not_active Expired - Lifetime
- 2003-02-11 EP EP03707258A patent/EP1481398B1/en not_active Expired - Lifetime
- 2003-02-11 WO PCT/NO2003/000052 patent/WO2003075279A1/en active IP Right Grant
- 2003-02-11 JP JP2003573646A patent/JP4054311B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20050151176A1 (en) | 2005-07-14 |
EP1481398A1 (en) | 2004-12-01 |
DE60301060T2 (de) | 2006-06-01 |
ES2246042T3 (es) | 2006-02-01 |
NO20021057A (no) | 2003-08-25 |
DE60301060D1 (de) | 2005-08-25 |
WO2003075279A1 (en) | 2003-09-12 |
ATE300087T1 (de) | 2005-08-15 |
NO315399B1 (no) | 2003-08-25 |
US7126176B2 (en) | 2006-10-24 |
JP2005519463A (ja) | 2005-06-30 |
DK1481398T3 (da) | 2005-10-31 |
AU2003208672A1 (en) | 2003-09-16 |
NO20021057D0 (no) | 2002-03-01 |
EP1481398B1 (en) | 2005-07-20 |
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