ATE300087T1 - Speicherzelle - Google Patents
SpeicherzelleInfo
- Publication number
- ATE300087T1 ATE300087T1 AT03707258T AT03707258T ATE300087T1 AT E300087 T1 ATE300087 T1 AT E300087T1 AT 03707258 T AT03707258 T AT 03707258T AT 03707258 T AT03707258 T AT 03707258T AT E300087 T1 ATE300087 T1 AT E300087T1
- Authority
- AT
- Austria
- Prior art keywords
- memory cell
- polymeric
- memory material
- memory
- ferroelectret
- Prior art date
Links
- 239000000463 material Substances 0.000 abstract 4
- 239000002131 composite material Substances 0.000 abstract 1
- 239000002322 conducting polymer Substances 0.000 abstract 1
- 229920001940 conductive polymer Polymers 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- External Artificial Organs (AREA)
- Laminated Bodies (AREA)
- Medicinal Preparation (AREA)
- Eye Examination Apparatus (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20021057A NO315399B1 (no) | 2002-03-01 | 2002-03-01 | Minnecelle |
| PCT/NO2003/000052 WO2003075279A1 (en) | 2002-03-01 | 2003-02-11 | A memory cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE300087T1 true ATE300087T1 (de) | 2005-08-15 |
Family
ID=19913385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT03707258T ATE300087T1 (de) | 2002-03-01 | 2003-02-11 | Speicherzelle |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US7126176B2 (de) |
| EP (1) | EP1481398B1 (de) |
| JP (1) | JP4054311B2 (de) |
| AT (1) | ATE300087T1 (de) |
| AU (1) | AU2003208672A1 (de) |
| DE (1) | DE60301060T2 (de) |
| DK (1) | DK1481398T3 (de) |
| ES (1) | ES2246042T3 (de) |
| NO (1) | NO315399B1 (de) |
| WO (1) | WO2003075279A1 (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6920060B2 (en) | 2002-08-14 | 2005-07-19 | Intel Corporation | Memory device, circuits and methods for operating a memory device |
| WO2005064614A1 (en) * | 2003-12-22 | 2005-07-14 | Koninklijke Philips Electronics N.V. | Non-volatile ferroelectric thin film device using an organic ambipolar semiconductor and method for processing such a device |
| US7205595B2 (en) * | 2004-03-31 | 2007-04-17 | Intel Corporation | Polymer memory device with electron traps |
| NO20041733L (no) * | 2004-04-28 | 2005-10-31 | Thin Film Electronics Asa | Organisk elektronisk krets med funksjonelt mellomsjikt og fremgangsmate til dens fremstilling. |
| DE102004057790A1 (de) * | 2004-11-30 | 2006-06-08 | Infineon Technologies Ag | Hybrid-Silizium-molekulare Speicherzelle mit hoher Speicherdichte |
| SG157268A1 (en) * | 2008-05-30 | 2009-12-29 | Sony Corp | Ferroelectric polymer |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3602887A1 (de) | 1986-01-31 | 1987-08-06 | Bayer Ag | Nichtfluechtiger elektronischer speicher |
| US5270967A (en) * | 1991-01-16 | 1993-12-14 | National Semiconductor Corporation | Refreshing ferroelectric capacitors |
| JPH1022470A (ja) | 1996-07-02 | 1998-01-23 | Hitachi Ltd | 半導体記憶装置及びその製造方法 |
| NO972803D0 (no) | 1997-06-17 | 1997-06-17 | Opticom As | Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte |
| NO309500B1 (no) | 1997-08-15 | 2001-02-05 | Thin Film Electronics Asa | Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme |
| JP2000068465A (ja) * | 1998-08-21 | 2000-03-03 | Nec Corp | 半導体装置及びその形成方法 |
| NO312699B1 (no) | 2000-07-07 | 2002-06-17 | Thin Film Electronics Asa | Adressering av minnematrise |
| NO20005980L (no) * | 2000-11-27 | 2002-05-28 | Thin Film Electronics Ab | Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling |
| NO20015879A (no) * | 2001-11-30 | 2003-03-31 | Thin Film Electronics Asa | Fremgangsmåte til lesing av celler i en passiv matriseadresserbar innretning, samt innretning for utførelse av fremgangsmåten |
-
2002
- 2002-03-01 NO NO20021057A patent/NO315399B1/no unknown
-
2003
- 2003-02-11 DE DE60301060T patent/DE60301060T2/de not_active Expired - Fee Related
- 2003-02-11 WO PCT/NO2003/000052 patent/WO2003075279A1/en active IP Right Grant
- 2003-02-11 EP EP03707258A patent/EP1481398B1/de not_active Expired - Lifetime
- 2003-02-11 AU AU2003208672A patent/AU2003208672A1/en not_active Abandoned
- 2003-02-11 AT AT03707258T patent/ATE300087T1/de not_active IP Right Cessation
- 2003-02-11 DK DK03707258T patent/DK1481398T3/da active
- 2003-02-11 ES ES03707258T patent/ES2246042T3/es not_active Expired - Lifetime
- 2003-02-11 JP JP2003573646A patent/JP4054311B2/ja not_active Expired - Fee Related
- 2003-02-11 US US10/504,860 patent/US7126176B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20050151176A1 (en) | 2005-07-14 |
| WO2003075279A1 (en) | 2003-09-12 |
| DK1481398T3 (da) | 2005-10-31 |
| JP4054311B2 (ja) | 2008-02-27 |
| ES2246042T3 (es) | 2006-02-01 |
| DE60301060D1 (de) | 2005-08-25 |
| JP2005519463A (ja) | 2005-06-30 |
| AU2003208672A1 (en) | 2003-09-16 |
| EP1481398A1 (de) | 2004-12-01 |
| US7126176B2 (en) | 2006-10-24 |
| NO20021057A (no) | 2003-08-25 |
| NO315399B1 (no) | 2003-08-25 |
| EP1481398B1 (de) | 2005-07-20 |
| DE60301060T2 (de) | 2006-06-01 |
| NO20021057D0 (no) | 2002-03-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |