JP5440852B2 - Mfms型電界効果トランジスタ及び強誘電体メモリ装置 - Google Patents
Mfms型電界効果トランジスタ及び強誘電体メモリ装置 Download PDFInfo
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- JP5440852B2 JP5440852B2 JP2009541206A JP2009541206A JP5440852B2 JP 5440852 B2 JP5440852 B2 JP 5440852B2 JP 2009541206 A JP2009541206 A JP 2009541206A JP 2009541206 A JP2009541206 A JP 2009541206A JP 5440852 B2 JP5440852 B2 JP 5440852B2
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- 230000005669 field effect Effects 0.000 title claims description 13
- 229920000642 polymer Polymers 0.000 claims description 26
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- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000002033 PVDF binder Substances 0.000 claims description 17
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 12
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 10
- 229910052797 bismuth Inorganic materials 0.000 claims description 10
- 229920001577 copolymer Polymers 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 10
- 150000004706 metal oxides Chemical class 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 229920001467 poly(styrenesulfonates) Polymers 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- -1 strontium titanate compound Chemical class 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 6
- 229910020684 PbZr Inorganic materials 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910002367 SrTiO Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052746 lanthanum Inorganic materials 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229920000767 polyaniline Polymers 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- 229910000906 Bronze Inorganic materials 0.000 claims description 4
- 229910004611 CdZnTe Inorganic materials 0.000 claims description 4
- 229910052691 Erbium Inorganic materials 0.000 claims description 4
- 229910052689 Holmium Inorganic materials 0.000 claims description 4
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 4
- 229910052765 Lutetium Inorganic materials 0.000 claims description 4
- 229910052775 Thulium Inorganic materials 0.000 claims description 4
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 239000010974 bronze Substances 0.000 claims description 4
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 229920001778 nylon Polymers 0.000 claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 239000004677 Nylon Substances 0.000 claims description 3
- 229920001940 conductive polymer Polymers 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- YDZQQRWRVYGNER-UHFFFAOYSA-N iron;titanium;trihydrate Chemical compound O.O.O.[Ti].[Fe] YDZQQRWRVYGNER-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000004581 coalescence Methods 0.000 claims description 2
- 229920001897 terpolymer Polymers 0.000 claims 2
- KWGRBVOPPLSCSI-UHFFFAOYSA-N d-ephedrine Natural products CNC(C)C(O)C1=CC=CC=C1 KWGRBVOPPLSCSI-UHFFFAOYSA-N 0.000 claims 1
- KWGRBVOPPLSCSI-WCBMZHEXSA-N pseudoephedrine Chemical compound CN[C@@H](C)[C@@H](O)C1=CC=CC=C1 KWGRBVOPPLSCSI-WCBMZHEXSA-N 0.000 claims 1
- 229960003908 pseudoephedrine Drugs 0.000 claims 1
- 230000010287 polarization Effects 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 9
- 230000014759 maintenance of location Effects 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000005684 electric field Effects 0.000 description 5
- 230000028161 membrane depolarization Effects 0.000 description 3
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920006027 ternary co-polymer Polymers 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6684—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a ferroelectric gate insulator
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/40—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the peripheral circuit region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
2 ソース領域
3 ドレイン領域
4 チャネル領域
5 強誘電体層
6 ソース電極
7 ドレイン電極
8 ゲート電極
30 データ電極
31 強誘電体層
32 接地電極
Claims (10)
- ソース及びドレイン領域とその間にチャネル領域が形成される基板と、
前記基板のチャネル領域の上側に形成される下部電極層と、
前記下部電極層上に形成される強誘電体層と、
前記強誘電体層上に形成される上部電極層と、を備えて構成され、
前記下部電極層がデータ電極であり、
前記上部電極層が接地電極であり、
前記強誘電体層が酸化物強誘電体、高分子強誘電体、フッ化物強誘電体または強誘電体半導体とこれら強誘電体の固形体のうち一つを含んで構成され、
前記強誘電体層が高分子強誘電体で、β状の結晶構造を有するPVDFであり、
前記下部電極層と上部電極層は、相互直交方向に延びて配設されることを特徴とするMFMS型強誘電体メモリ装置。
- 前記下部電極及び上部電極層が金、銀、アルミニウム、プラチナム、酸化インジウムスズ(ITO)、ストロンチウムチタネート化合物(SrTiO3)、その他の伝導性金属酸化物とこれらの合金及び化合物、または伝導性重合体を基材として用いる、ポリアニリン、ポリ(3,4−エチレンジオキシチオフェン)/ポリ(スチレンスルホネート)(PEDOT/PSS)の混合物や化合物または多層物を含む全ての導電性金属及び金属酸化物と導電性有機物のうち少なくとも一つを含んで構成されることを特徴とする請求項1に記載のMFMS型強誘電体メモリ装置。
- 前記酸化物強誘電体が、PZT(PbZrxTi1−xO3)、BaTiO3、PbTiO3を含むペロブスカイト(Perovskite)強誘電体、LiNbO3、LiTaO3を含むシュードイルメナイト(Pseudo−ilmenite)強誘電体、PbNb3O6、Ba2NaNb5O15を含むタングステン−青銅(TB)強誘電体、SBT(SrBi2Ta2O9)、BLT((Bi,La)4Ti3O12)、Bi4Ti3O12を含むビスマス層構造の強誘電体、La2Ti2O7を含むパイロクロア(Pyrochlore)またはY、Er、Ho、Tm、Yb、Luの希土類元素(R)を含むRMnO3、PGO(Pb5Ge3O11)及びBFO(BiFeO3)のうち少なくとも一つを含むことを特徴とする請求項1に記載のMFMS型強誘電体メモリ装置。
- 前記高分子強誘電体が、ポリビニリデンフロライド(PVDF)、このPVDFを含む重合体、共重合体、または三元共重合体が用いられ、その他奇数のナイロン、シアノ重合体及びこれらの重合体や共重合体のうち少なくとも一つを含むことを特徴とする請求項1に記載のMFMS型強誘電体メモリ装置。
- 前記強誘電体半導体がCdZnTe、CdZnS、CdZnSe、CdMnS、CdFeS、CdMnSe及びCdFeSeを含む2−6族化合物のうち少なくとも一つを含むことを特徴とする請求項1に記載のMFMS型強誘電体メモリ装置。
- ソース及びドレイン領域とその間にチャネル領域が形成される基板と、
前記基板のチャネル領域の上側に形成される下部電極層と、
前記下部電極層上に形成される強誘電体層と、
前記強誘電体層上に形成される上部電極層と、を備えて構成され、
前記下部電極層が接地電極であり、
前記上部電極層がデータ電極であり、
前記強誘電体層が、酸化物強誘電体、高分子強誘電体、フッ化物強誘電体及び強誘電体半導体とこれら強誘電体の固形体のうち一つを含んで構成され、
前記強誘電体層が高分子強誘電体で、β状の結晶構造を有するPVDFであり、
前記下部電極層と上部電極層は、相互直交方向に延びて配設されることを特徴とするMFMS型電界効果トランジスタ。
- 前記下部電極及び上部電極層が、金、銀、アルミニウム、プラチナム、酸化インジウムスズ(ITO)、ストロンチウムチタネート化合物(SrTiO3)、その他の伝導性金属酸化物とこれらの合金及び化合物、または伝導性重合体を基材として用いる、ポリアニリン、ポリ(3,4−エチレンジオキシチオフェン)/ポリ(スチレンスルホネート)(PEDOT/PSS)の混合物や化合物または多層物を含む全ての導電性金属または金属酸化物と導電性有機物のうち少なくとも一つを含んで構成されることを特徴とする請求項6に記載のMFMS型電界効果トランジスタ。
- 前記酸化物強誘電体がPZT(PbZrxTi1−xO3)、BaTiO3、PbTiO3を含むペロブスカイト(Perovskite)強誘電体、LiNbO3、LiTaO3を含むシュードイルメナイト(Pseudo−ilmenite)強誘電体、 PbNb3O6、Ba2NaNb5O15を含むタングステン−青銅(TB)強誘電体、SBT(SrBi2Ta2O9)、BLT((Bi,La)4Ti3O12)、Bi4Ti3O12を含むビスマス層構造の強誘電体、La2Ti2O7を含むパイロクロア(Pyrochlore)またはY、Er、Ho、Tm、Yb、Luなどの希土類元素(R)を含むRMnO3、PGO(Pb5Ge3O11)及びBFO(BiFeO3)のうち少なくとも一つを含むことを特徴とする請求項6に記載のMFMS型電界効果トランジスタ。
- 前記高分子強誘電体が、ポリビニリデンフロライド(PVDF)、該PVDFを含む重合体、共重合体、または三元共重合体が用いられ、その他奇数のナイロン、シアノ重合体及びこれらの重合体や共重合体のうち少なくとも一つを含むことを特徴とする請求項6に記載のMFMS型電界効果トランジスタ。
- 前記強誘電体半導体が、CdZnTe、CdZnS、CdZnSe、CdMnS、CdFeS、CdMnSe及びCdFeSeを含む2−6族化合物のうち少なくとも一つを含むことを特徴とする請求項6に記載のMFMS型電界効果トランジスタ。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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KR20060127494 | 2006-12-13 | ||
KR10-2006-0127494 | 2006-12-13 | ||
KR1020070057534A KR100866314B1 (ko) | 2006-12-13 | 2007-06-12 | 엠에프엠에스형 전계효과 트랜지스터 및 강유전체 메모리장치 |
KR10-2007-0057534 | 2007-06-12 | ||
PCT/KR2007/002881 WO2008072826A1 (en) | 2006-12-13 | 2007-06-14 | Mfms-fet and mfms-ferroelectric memory device |
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JP2010514154A JP2010514154A (ja) | 2010-04-30 |
JP5440852B2 true JP5440852B2 (ja) | 2014-03-12 |
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JP2009541206A Expired - Fee Related JP5440852B2 (ja) | 2006-12-13 | 2007-06-14 | Mfms型電界効果トランジスタ及び強誘電体メモリ装置 |
Country Status (2)
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KR (1) | KR100866314B1 (ja) |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3169406B2 (ja) * | 1991-11-11 | 2001-05-28 | ローム株式会社 | 不揮発性半導体記憶装置 |
JPH07335770A (ja) * | 1994-06-06 | 1995-12-22 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタ |
KR100219519B1 (ko) * | 1997-01-10 | 1999-09-01 | 윤종용 | 페로일렉트릭 플로팅 게이트 램을 구비하는 반도체 메모리 디바이스 및 그 제조방법 |
JP4080050B2 (ja) * | 1997-03-07 | 2008-04-23 | シャープ株式会社 | 強誘電体メモリセル、半導体構造およびそれらの製造方法 |
JPH1140767A (ja) | 1997-07-16 | 1999-02-12 | Sanyo Electric Co Ltd | 誘電体素子及びその製造方法 |
KR100362169B1 (ko) * | 1999-10-18 | 2002-11-23 | 한국전자통신연구원 | 비파괴독출형 전계효과트랜지스터 및 그 제조방법 |
US7186380B2 (en) * | 2002-07-01 | 2007-03-06 | Hewlett-Packard Development Company, L.P. | Transistor and sensors made from molecular materials with electric dipoles |
US7205595B2 (en) * | 2004-03-31 | 2007-04-17 | Intel Corporation | Polymer memory device with electron traps |
KR100966301B1 (ko) * | 2005-05-11 | 2010-06-28 | 서울시립대학교 산학협력단 | 강유전체 메모리장치의 제조방법 |
US20080128682A1 (en) * | 2005-05-11 | 2008-06-05 | University Of Seoul Foundation Of Industry- Academic Cooperation | Ferrodielectric Memory Device And Method For Manufacturing The Same |
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- 2007-06-12 KR KR1020070057534A patent/KR100866314B1/ko active IP Right Grant
- 2007-06-14 JP JP2009541206A patent/JP5440852B2/ja not_active Expired - Fee Related
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JP2010514154A (ja) | 2010-04-30 |
KR20080055589A (ko) | 2008-06-19 |
KR100866314B1 (ko) | 2008-11-03 |
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