NO20100512L - Fremgangsmate for fremstilling av medium- og hoyrent silisium fra metallurgisk silisium - Google Patents

Fremgangsmate for fremstilling av medium- og hoyrent silisium fra metallurgisk silisium

Info

Publication number
NO20100512L
NO20100512L NO20100512A NO20100512A NO20100512L NO 20100512 L NO20100512 L NO 20100512L NO 20100512 A NO20100512 A NO 20100512A NO 20100512 A NO20100512 A NO 20100512A NO 20100512 L NO20100512 L NO 20100512L
Authority
NO
Norway
Prior art keywords
silicon
melt
cleaner
solid
outer shell
Prior art date
Application number
NO20100512A
Other languages
English (en)
Inventor
Dominic Leblanc
Rene Boisvert
Original Assignee
Silicium Becancour Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicium Becancour Inc filed Critical Silicium Becancour Inc
Publication of NO20100512L publication Critical patent/NO20100512L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

SAMMENDRAG Fremgangsmåte for rensing av lavrent metallurgisk silisium som inneholder minst én kontaminant, for oppnåelse av et renere, fast og polykrystallinsk silisium. · Fremgangsmåten innbefatter anordning av en smelte av lavrent metallurgisk silisium i en form som har en isolert bunn og isolerte sidevegger og en åpen topp. Smelten størkner med ensrettet størkning fra den åpne toppen og mot bunnen, samtidig som smelten omrøres elektromagnetisk. Raten for den ensrettede størkningen styres. Den ensrettede størkningen stoppes når smelten er delvis størknet, for derved å tilveiebringe en barre som har et ytre skall som innbefatter det renere, faste og polykrystallinske silisiumet og har et senter med urenhetsanriket flytende silisium. I barrens ytre skall tilveiebringes det en åpning slik at det urenhetsanrikede flytende silisiumet kan strømme ut, hvorved det blir igjen et ytre skall med det renere, faste og polykrystallinske silisiumet.
NO20100512A 2007-09-13 2010-04-08 Fremgangsmate for fremstilling av medium- og hoyrent silisium fra metallurgisk silisium NO20100512L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US96006107P 2007-09-13 2007-09-13
PCT/CA2008/000492 WO2009033255A1 (en) 2007-09-13 2008-03-13 Process for the production of medium and high purity silicon from metallurgical grade silicon

Publications (1)

Publication Number Publication Date
NO20100512L true NO20100512L (no) 2010-04-08

Family

ID=40451503

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20100512A NO20100512L (no) 2007-09-13 2010-04-08 Fremgangsmate for fremstilling av medium- og hoyrent silisium fra metallurgisk silisium

Country Status (16)

Country Link
US (1) US7727502B2 (no)
EP (1) EP2212249B1 (no)
JP (1) JP2010538952A (no)
KR (1) KR20100061510A (no)
CN (1) CN101868422B (no)
AU (1) AU2008299523A1 (no)
BR (1) BRPI0816972A2 (no)
CA (1) CA2695393C (no)
EA (1) EA017480B1 (no)
ES (1) ES2530720T3 (no)
MX (1) MX2010002728A (no)
MY (1) MY143807A (no)
NO (1) NO20100512L (no)
UA (1) UA97691C2 (no)
WO (1) WO2009033255A1 (no)
ZA (1) ZA201000882B (no)

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KR20130063501A (ko) 2010-05-20 2013-06-14 다우 코닝 코포레이션 알루미늄-규소 합금을 생성하기 위한 방법 및 시스템
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CN103443296B (zh) * 2011-07-18 2015-06-03 Abb研究有限公司 用于控制熔化过程的方法和控制系统
CN103266349B (zh) * 2013-05-31 2015-07-15 大连理工大学 高纯中空硅材料、多晶硅铸锭硅真空固液分离方法及设备
CN103266350B (zh) * 2013-05-31 2015-08-12 大连理工大学 多晶硅铸锭硅真空固液分离方法及分离设备
JP6401051B2 (ja) * 2014-12-26 2018-10-03 京セラ株式会社 多結晶シリコンインゴットの製造方法
RU2632827C2 (ru) * 2015-12-08 2017-10-10 Общество с ограниченной ответственностью "Современные химические и металлургические технологии" (ООО "СХИМТ") Устройство для рафинирования кремния
CN107255572B (zh) * 2017-05-12 2020-04-21 宜昌南玻硅材料有限公司 半熔铸锭工艺中硅锭的少子寿命抽样方法
JP6919633B2 (ja) 2018-08-29 2021-08-18 信越半導体株式会社 単結晶育成方法
WO2020221439A1 (de) * 2019-04-30 2020-11-05 Wacker Chemie Ag Verfahren zur raffination von rohsilicium-schmelzen mittels eines partikulären mediators
CN111675222B (zh) * 2020-07-13 2022-08-09 昆明理工大学 一种利用低品位硅石生产工业硅的方法
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Also Published As

Publication number Publication date
EP2212249A4 (en) 2012-08-15
CA2695393C (en) 2012-01-03
US20090074648A1 (en) 2009-03-19
ZA201000882B (en) 2011-04-28
BRPI0816972A2 (pt) 2015-03-24
EA017480B1 (ru) 2012-12-28
UA97691C2 (ru) 2012-03-12
ES2530720T3 (es) 2015-03-04
CA2695393A1 (en) 2009-03-19
CN101868422A (zh) 2010-10-20
WO2009033255A1 (en) 2009-03-19
EA201070358A1 (ru) 2010-08-30
EP2212249B1 (en) 2015-01-14
EP2212249A1 (en) 2010-08-04
JP2010538952A (ja) 2010-12-16
CN101868422B (zh) 2013-10-09
MY143807A (en) 2011-07-15
AU2008299523A1 (en) 2009-03-19
US7727502B2 (en) 2010-06-01
MX2010002728A (es) 2010-08-02
KR20100061510A (ko) 2010-06-07

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Legal Events

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CHAD Change of the owner's name or address (par. 44 patent law, par. patentforskriften)

Owner name: SILICIO FERROSOLAR, S.L.U., ES

FC2A Withdrawal, rejection or dismissal of laid open patent application