CN1299983C - 光电级硅的制造方法 - Google Patents
光电级硅的制造方法 Download PDFInfo
- Publication number
- CN1299983C CN1299983C CNB031502415A CN03150241A CN1299983C CN 1299983 C CN1299983 C CN 1299983C CN B031502415 A CNB031502415 A CN B031502415A CN 03150241 A CN03150241 A CN 03150241A CN 1299983 C CN1299983 C CN 1299983C
- Authority
- CN
- China
- Prior art keywords
- silicon
- negative pressure
- temperature
- hydrogen
- water vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 65
- 239000010703 silicon Substances 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000001257 hydrogen Substances 0.000 claims abstract description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 11
- 239000002994 raw material Substances 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 230000006698 induction Effects 0.000 claims abstract description 7
- 239000011261 inert gas Substances 0.000 claims abstract description 7
- 238000007670 refining Methods 0.000 claims abstract description 7
- 238000003756 stirring Methods 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 230000004927 fusion Effects 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052796 boron Inorganic materials 0.000 abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052799 carbon Inorganic materials 0.000 abstract description 7
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 7
- 239000011574 phosphorus Substances 0.000 abstract description 7
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 6
- 238000001816 cooling Methods 0.000 abstract description 6
- 229910001385 heavy metal Inorganic materials 0.000 abstract description 6
- 238000007711 solidification Methods 0.000 abstract description 4
- 230000008023 solidification Effects 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 2
- 238000002844 melting Methods 0.000 abstract description 2
- 230000008018 melting Effects 0.000 abstract description 2
- 238000000746 purification Methods 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 1
- 229910052717 sulfur Inorganic materials 0.000 abstract 1
- 239000011593 sulfur Substances 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 description 6
- 239000005864 Sulphur Substances 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 239000004484 Briquette Substances 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 239000002893 slag Substances 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 235000013409 condiments Nutrition 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Silicon Compounds (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB031502415A CN1299983C (zh) | 2003-07-22 | 2003-07-22 | 光电级硅的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB031502415A CN1299983C (zh) | 2003-07-22 | 2003-07-22 | 光电级硅的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1569629A CN1569629A (zh) | 2005-01-26 |
CN1299983C true CN1299983C (zh) | 2007-02-14 |
Family
ID=34472666
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031502415A Expired - Fee Related CN1299983C (zh) | 2003-07-22 | 2003-07-22 | 光电级硅的制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1299983C (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101563290B (zh) * | 2006-08-18 | 2012-12-12 | 伊奥西尔能源公司 | 提高多晶硅的纯化和沉积效率的方法和装置 |
US7820126B2 (en) * | 2006-08-18 | 2010-10-26 | Iosil Energy Corporation | Method and apparatus for improving the efficiency of purification and deposition of polycrystalline silicon |
KR20100033956A (ko) * | 2007-06-26 | 2010-03-31 | 파나소닉 주식회사 | 금속 실리콘의 정제 방법과 실리콘 덩어리의 제조 방법 |
CN100595352C (zh) * | 2007-07-17 | 2010-03-24 | 佳科太阳能硅(龙岩)有限公司 | 太阳能级多晶硅大锭的制备方法 |
JP2010538952A (ja) | 2007-09-13 | 2010-12-16 | シリシアム・ベカンクール・インコーポレイテッド | 冶金グレードシリコンから中純度および高純度シリコンを製造するためのプロセス |
US20110059002A1 (en) * | 2008-04-11 | 2011-03-10 | John Allan Fallavollita | Methods and apparatus for recovery of silicon and silicon carbide from spent wafer-sawing slurry |
CN101423220B (zh) * | 2008-11-17 | 2011-04-06 | 上海普罗新能源有限公司 | 一种多温区硅材料提纯与铸锭的方法及其装置 |
CN101774586B (zh) * | 2010-02-05 | 2011-12-28 | 大连隆田科技有限公司 | 感应蒸发去除多晶硅中杂质硼的方法及装置 |
CN102351197A (zh) * | 2010-03-19 | 2012-02-15 | 姜学昭 | 一种提纯硅的方法 |
CN108328618B (zh) * | 2018-01-30 | 2021-02-09 | 青岛蓝光晶科新材料有限公司 | 一种电磁感应定向凝固分离硅中硬质夹杂的方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1197037A (zh) * | 1997-01-22 | 1998-10-28 | 川崎制铁株式会社 | 从金属硅中除去硼的方法和装置 |
CN1204298A (zh) * | 1996-10-14 | 1999-01-06 | 川崎制铁株式会社 | 多晶硅的制造方法和装置以及太阳能电池用硅基片的制造方法 |
US5972107A (en) * | 1997-08-28 | 1999-10-26 | Crystal Systems, Inc. | Method for purifying silicon |
-
2003
- 2003-07-22 CN CNB031502415A patent/CN1299983C/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1204298A (zh) * | 1996-10-14 | 1999-01-06 | 川崎制铁株式会社 | 多晶硅的制造方法和装置以及太阳能电池用硅基片的制造方法 |
CN1197037A (zh) * | 1997-01-22 | 1998-10-28 | 川崎制铁株式会社 | 从金属硅中除去硼的方法和装置 |
US5972107A (en) * | 1997-08-28 | 1999-10-26 | Crystal Systems, Inc. | Method for purifying silicon |
Also Published As
Publication number | Publication date |
---|---|
CN1569629A (zh) | 2005-01-26 |
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C06 | Publication | ||
PB01 | Publication | ||
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20050126 Assignee: Fujian Xing the Zhaoyang Silicon Materials Co., Ltd. Assignor: Gong Bingsheng Contract record no.: 2010350000027 Denomination of invention: Method of manufacturing a photovoltaic silicon Granted publication date: 20070214 License type: Exclusive License Record date: 20100331 |
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ASS | Succession or assignment of patent right |
Owner name: FUJIAN CHAOYANG SILICON MATERIALS CO., LTD. Free format text: FORMER OWNER: GONG BINGSHENG Effective date: 20111121 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111121 Address after: 364211 Nanyang Industrial Zone, Nanyang Town, Shanghang County, Longyan, Fujian Patentee after: Fujian Xing the Zhaoyang Silicon Materials Co., Ltd. Address before: 364211 No. 75 Yanhe Road, Nanyang Town, Shanghang County, Fujian, Longyan Patentee before: Gong Bingsheng |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070214 Termination date: 20150722 |
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EXPY | Termination of patent right or utility model |