FR2831881B1 - Procede de purification de silicium metallurgique par plasma inductif couple a une solidification directionnelle et obtention directe de silicium de qualite solaire - Google Patents

Procede de purification de silicium metallurgique par plasma inductif couple a une solidification directionnelle et obtention directe de silicium de qualite solaire

Info

Publication number
FR2831881B1
FR2831881B1 FR0114235A FR0114235A FR2831881B1 FR 2831881 B1 FR2831881 B1 FR 2831881B1 FR 0114235 A FR0114235 A FR 0114235A FR 0114235 A FR0114235 A FR 0114235A FR 2831881 B1 FR2831881 B1 FR 2831881B1
Authority
FR
France
Prior art keywords
silicon
purification
directional solidification
inductive plasma
direct obtaining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0114235A
Other languages
English (en)
Other versions
FR2831881A1 (fr
Inventor
Hubert Lauvray
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR0114235A priority Critical patent/FR2831881B1/fr
Publication of FR2831881A1 publication Critical patent/FR2831881A1/fr
Application granted granted Critical
Publication of FR2831881B1 publication Critical patent/FR2831881B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
FR0114235A 2001-11-02 2001-11-02 Procede de purification de silicium metallurgique par plasma inductif couple a une solidification directionnelle et obtention directe de silicium de qualite solaire Expired - Fee Related FR2831881B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR0114235A FR2831881B1 (fr) 2001-11-02 2001-11-02 Procede de purification de silicium metallurgique par plasma inductif couple a une solidification directionnelle et obtention directe de silicium de qualite solaire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0114235A FR2831881B1 (fr) 2001-11-02 2001-11-02 Procede de purification de silicium metallurgique par plasma inductif couple a une solidification directionnelle et obtention directe de silicium de qualite solaire

Publications (2)

Publication Number Publication Date
FR2831881A1 FR2831881A1 (fr) 2003-05-09
FR2831881B1 true FR2831881B1 (fr) 2004-01-16

Family

ID=8869033

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0114235A Expired - Fee Related FR2831881B1 (fr) 2001-11-02 2001-11-02 Procede de purification de silicium metallurgique par plasma inductif couple a une solidification directionnelle et obtention directe de silicium de qualite solaire

Country Status (1)

Country Link
FR (1) FR2831881B1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101006205B (zh) * 2004-06-18 2011-11-09 Memc电子材料有限公司 向晶体形成装置装载熔融源材料的熔化器组件和方法
CN103998886A (zh) * 2011-10-20 2014-08-20 Efd感应股份有限公司 用于将材料提纯的设备
CN105823712A (zh) * 2016-03-08 2016-08-03 山东理工大学 一种测定鳞片石墨矿中大鳞片石墨含量的方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2869028B1 (fr) * 2004-04-20 2006-07-07 Efd Induction Sa Sa Procede et installation de fabrication de blocs d'un materiau semiconducteur
US7691199B2 (en) 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7344594B2 (en) 2004-06-18 2008-03-18 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7465351B2 (en) 2004-06-18 2008-12-16 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
FR2908125B1 (fr) 2006-11-02 2009-11-20 Commissariat Energie Atomique Procede de purification de silicium metallurgique par solidification dirigee
MX2010002728A (es) 2007-09-13 2010-08-02 Silicium Becancour Inc Proceso para la producción de silicio de alta y media pureza a partir de silicio de grado metalurgico.
EP2530187A1 (fr) * 2011-06-03 2012-12-05 Evonik Solar Norge AS Affinage de silicone par solidification directionnelle dans une atmosphère contenant de l'oxygène

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3000109B2 (ja) * 1990-09-20 2000-01-17 株式会社住友シチックス尼崎 高純度シリコン鋳塊の製造方法
EP0869102B1 (fr) * 1996-10-14 2002-05-22 Kawasaki Steel Corporation Procede et appareil de preparation de silicium polycristallin et procede de preparation d'un substrat en silicium pour cellule solaire
CA2232777C (fr) * 1997-03-24 2001-05-15 Hiroyuki Baba Procede pour la production de silicium destine a la fabrication de photopiles
FR2772741B1 (fr) * 1997-12-19 2000-03-10 Centre Nat Rech Scient Procede et installation d'affinage du silicium

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101006205B (zh) * 2004-06-18 2011-11-09 Memc电子材料有限公司 向晶体形成装置装载熔融源材料的熔化器组件和方法
CN103998886A (zh) * 2011-10-20 2014-08-20 Efd感应股份有限公司 用于将材料提纯的设备
CN103998886B (zh) * 2011-10-20 2016-05-25 法国晶片公司 用于将材料提纯的设备
CN105823712A (zh) * 2016-03-08 2016-08-03 山东理工大学 一种测定鳞片石墨矿中大鳞片石墨含量的方法
CN105823712B (zh) * 2016-03-08 2018-06-26 山东理工大学 一种测定鳞片石墨矿中大鳞片石墨含量的方法

Also Published As

Publication number Publication date
FR2831881A1 (fr) 2003-05-09

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