KR970065766A - 유도형 플라즈마 화학기상증착방법 및 그를 이용하여 생성된 비정질 실리콘 박막 트랜지스터 - Google Patents

유도형 플라즈마 화학기상증착방법 및 그를 이용하여 생성된 비정질 실리콘 박막 트랜지스터 Download PDF

Info

Publication number
KR970065766A
KR970065766A KR1019970009218A KR19970009218A KR970065766A KR 970065766 A KR970065766 A KR 970065766A KR 1019970009218 A KR1019970009218 A KR 1019970009218A KR 19970009218 A KR19970009218 A KR 19970009218A KR 970065766 A KR970065766 A KR 970065766A
Authority
KR
South Korea
Prior art keywords
thin film
silicon thin
amorphous silicon
inductively coupled
coupled plasma
Prior art date
Application number
KR1019970009218A
Other languages
English (en)
Other versions
KR100469134B1 (ko
Inventor
장진
김재각
조세일
Original Assignee
장진
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 장진 filed Critical 장진
Publication of KR970065766A publication Critical patent/KR970065766A/ko
Application granted granted Critical
Publication of KR100469134B1 publication Critical patent/KR100469134B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/914—Differential etching apparatus including particular materials of construction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 광감도, 전기전도도, 활성화에너지, 광학적 밴드 갭과 같은 박막의 특성이 우수하고 균일한 비정질 실리콘박막 등을 제조할 수 있는 유도결합형 플라즈마 CVD 방법을 제공하는 것을 목적으로 한다. 본 발명의 유도결합형 플라즈마 CVD 방법은 적어도 일부분이 유전체창(dielectric shield)을 포함하고, 상기 유전체창의 반응챔버내측의 표면에 산소를 포함하지 않는 실리콘층을 가지며, 상기 유전체창에 인접하여 놓여있는, RF전력이 인가될 수 있는 안테나를 포함하는 진공화학증착 챔버를 제공하는 단계; 상기 챔버내에 있는 스테이지 상에 기판을 위치시키는 단계; 상기 챔버를 진공화하는 단계; 상기 챔버내에 반응가스를 공급하는 단계; 상기 안테나에 RF전력을 인가하는 단계; 및, 상기 기판상에 박막을 형성하기 위하여 상기 챔버내에 증발반응가스 유도결합형 플라즈마를 형성하는 단계를 포함하는 것을 특징으로 한다.

Description

유도형 플라즈마 화학기상증착방법 및 그를 이용하여 생성된 비정질 실리콘 박막 트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 유도결합형 플라즈마 CVD 장치의 실시예를 나타내는 설명도.

Claims (20)

  1. 반응가스 유도결합형 플라즈마로부터 기판상에 선택된 박막을 증착하는 방법으로서, 적어도 일부분이 유전체창(dielectric shield)을 포함하고, 상기 유전체창의 반응챔버내측의 표면에 산소를 포함하지 않는 실리콘막을 가지며, 또한 상기 유전체창에 인접하여 놓여있는 고주파인가가 가능한 안테나를 포함하는 진공화학증착챔버를 제공하는 단계; 상기 챔버내에 있는 스테이지상에 기판을 위치시키는 단계; 상기 챔버를 진공화하는 단계; 상기 챔버내로 반응 가스를 제어된 압력으로 공급하는 단계; 상기 안테나에 RF 전력을 인가하는 단계; 및 상기 기판상에 박막을 형성하기 위하여 상기 챔버내에 증착 반응가스 유도결합형 플라즈마를 형성하는 단계를 포함하는 것을 특징으로 하는 유도결합형 플라즈마 CVD 방법.
  2. 제1항에 있어서, 상기 유전체창은 석영재, 또는 Al2O3재인 것을 특징으로 하는 유도결합형 플라즈마 CVD 방법.
  3. 제1항에 있어서, 상기 반응가스는 유전체, 금속, 반도체 조성물들로부터 선택된 박막을 증착할 수 있도록 선택된 조성인 것을 특징으로 하는 유도결합형 플라즈마 CVD 방법.
  4. 제1항에 있어서, 상기 반응가스는 실리콘 박막을 증착할 수 있도록 선택된 조성을 갖는 것을 특징으로 하는 유도결합형 플라즈마 CVD 방법.
  5. 제1항에 있어서, 상기 반응가스는 질화 실리콘 박막을 증착할 수 있도록 선택된 조성을 갖는 것을 특징으로 하는 유도결합형 플라즈마 CVD 방법.
  6. 유도결합형 플라즈마로부터 지지 기판구조체상에 형성된 비정질실리콘 박막.
  7. 제6항에 있어서, 상기 비정질 실리콘 박막은 상온에서의 암전기전도도가 4.3 ×10-12S/㎝인 것을 특징으로 하는 비정질실리콘 박막.
  8. 제6항에 있어서, 상기 비정질실리콘 박막은, AM-1(100mV/㎠)의 조건하에서 광전기전도도가 1.4 ×10-5S/㎝인 것을 특징으로 하는 비정질실리콘 박막.
  9. 제6항에 있어서, 상기 비정질실리콘 박막은 광감도가 약 3 ×106인 것을 특징으로 하는 비정질실리콘 박막.
  10. 제6항에 있어서, 상기 비정질실리콘 박막은 광학적 밴드갭이 1.78eV인 것을 특징으로 하는 비정질실리콘 박막.
  11. 유도결합형 플라즈마로부터 지지기판구조체상에 형성된 미세결정질 실리콘 박막으로서, 그의 미세결정립의 크기가 200~300A 이고 그의 결정화도가 70~73%인 것을 특징으로 하는 미세결정질 실리콘 박막.
  12. 유도결합형 플라즈마로부터 지지 기판구조체상에 형성된 질화 실리콘막.
  13. 제12항에 있어서, 상기 질화 실리콘막은 항복전압이 7MV이고, 전류밀도가 1MV/㎝에서 10-10A/㎠인 것을 특징으로 하는 질화 실리콘막.
  14. 비정질 실리콘박막을 포함하는 비정질 실리콘 박막 트랜지스터로서, 상기 비정질 실리콘 박막이 유도결합형 플라즈마로부터 형성된 것을 특징으로 하는 비정질실리콘 박막 트랜지스터.
  15. 오옴익 층을 포함하는 비정질 실리콘 박막 트랜지스터로서, 상기 오옥익 층은 유도결합형 플라즈마로부터 형성된 n+형 비정질 실리콘 박막인 것을 특징으로 하는 비정질 실리콘 박막 트랜지스터.
  16. 오옴익 층을 포함하는 비정질 실리콘 박막 트랜지스터로서, 상기 오옴익 층은 유도결합형 플라즈마로부터 형성된 n+형 미세결정질 실리콘 박막인 것을 특징으로 하는 비정질 실리콘 박막 트랜지스터.
  17. 오옴익 층을 포함하는 비정질 실리콘 박막 트랜지스터로서, 상기 오옴익 층은 유도결합형 플라즈마로부터 형성된 것을 특징으로 하는 비정질 실리콘 박막 트랜지스터.
  18. 유도결합형 플라즈마로부터 형성된 수소화된 비정질 실리콘박막을 포함하는 비정질 박막 트랜지스터.
  19. 제18항에 있어서, 박막 트랜지스터의 드레인 전류가 2.0 ×10-6A에서 포화되는 것을 특징으로 하는 비정질 실리콘 박막 트랜지스터.
  20. 제18항에 있어서, 박막 트랜지스터의 전계효과 이동도가 0.80㎠/VS이고, 문턱전압값이 약 4.6V인 것을 특징으로 하는 비정질 실리콘 박막 트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970009218A 1996-03-18 1997-03-18 유도형플라즈마화학기상증착방법및그를이용하여생성된비정질실리콘박막트랜지스터 KR100469134B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR19960007201 1996-03-18
KR96-7201 1996-03-18
KR1019960007201 1996-03-18
KR1019960021113 1996-06-13
KR19960021113 1996-06-13
KR96-21113 1996-06-13

Publications (2)

Publication Number Publication Date
KR970065766A true KR970065766A (ko) 1997-10-13
KR100469134B1 KR100469134B1 (ko) 2005-09-02

Family

ID=26631682

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019970009218A KR100469134B1 (ko) 1996-03-18 1997-03-18 유도형플라즈마화학기상증착방법및그를이용하여생성된비정질실리콘박막트랜지스터
KR1019970009217A KR100476039B1 (ko) 1996-03-18 1997-03-18 유도결합형 플라즈마 cvd 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1019970009217A KR100476039B1 (ko) 1996-03-18 1997-03-18 유도결합형 플라즈마 cvd 장치

Country Status (5)

Country Link
US (3) US5951773A (ko)
JP (2) JPH1081973A (ko)
KR (2) KR100469134B1 (ko)
DE (2) DE19711268B4 (ko)
GB (2) GB2311299B (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100731998B1 (ko) * 2005-06-07 2007-06-27 주식회사 뉴파워 프라즈마 유도결합 플라즈마 소오스
CN102653859A (zh) * 2012-05-10 2012-09-05 中国电子科技集团公司第四十八研究所 一种石墨舟自动装卸片升降传递装置

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2311299B (en) * 1996-03-18 2000-03-29 Hyundai Electronics Ind Inductively coupled plasma chemical vapor deposition technology
WO1999000829A1 (fr) * 1997-06-30 1999-01-07 Matsushita Electric Industrial Co., Ltd. Procede de fabrication d'un film semi-conducteur mince et dispositif de mise en oeuvre correspondant
DE69927221T2 (de) 1998-01-29 2006-07-13 Sumitomo Chemical Co., Ltd. Thermoplastische elastomerzusammensetzung in pulverform, pulverformverfahren unter verwendung derselben und formteile
US6511760B1 (en) * 1998-02-27 2003-01-28 Restek Corporation Method of passivating a gas vessel or component of a gas transfer system using a silicon overlay coating
JP4332263B2 (ja) * 1998-10-07 2009-09-16 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタの製造方法
KR100524622B1 (ko) * 1999-04-03 2005-11-01 엘지.필립스 엘시디 주식회사 폴리실리콘 반도체층을 포함한 박막트랜지스터 제조방법
US6447635B1 (en) * 1999-08-24 2002-09-10 Bethel Material Research Plasma processing system and system using wide area planar antenna
US6320320B1 (en) * 1999-11-15 2001-11-20 Lam Research Corporation Method and apparatus for producing uniform process rates
KR20010087598A (ko) * 2000-03-08 2001-09-21 황 철 주 Ｈｄｐ-ｃｖｄ 장치 및 이를 이용한 갭 필링 방법
US6559052B2 (en) * 2000-07-07 2003-05-06 Applied Materials, Inc. Deposition of amorphous silicon films by high density plasma HDP-CVD at low temperatures
US6465366B1 (en) * 2000-09-12 2002-10-15 Applied Materials, Inc. Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers
KR100675097B1 (ko) 2000-11-15 2007-01-29 주성엔지니어링(주) 유도결합형 플라즈마 장치
US6534423B1 (en) * 2000-12-27 2003-03-18 Novellus Systems, Inc. Use of inductively-coupled plasma in plasma-enhanced chemical vapor deposition reactor to improve film-to-wall adhesion following in-situ plasma clean
US6706336B2 (en) 2001-02-02 2004-03-16 Canon Kabushiki Kaisha Silicon-based film, formation method therefor and photovoltaic element
US6589868B2 (en) * 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
KR100448880B1 (ko) * 2001-09-28 2004-09-18 김성훈 단백질칩 기판 및 플라즈마를 이용한 단백질칩 기판의제조방법
KR20030046189A (ko) * 2001-12-05 2003-06-12 변홍식 플라즈마 발생장치
DE10308381B4 (de) * 2003-02-27 2012-08-16 Forschungszentrum Jülich GmbH Verfahren zur Abscheidung von Silizium
JP3839038B2 (ja) * 2003-06-02 2006-11-01 株式会社シンクロン 薄膜形成装置
US8357242B2 (en) * 2007-05-03 2013-01-22 Jewett Russell F Crystalline film devices, apparatuses for and methods of fabrication
DE102004039969A1 (de) * 2004-08-18 2006-02-23 Leybold Optics Gmbh Plasmaquellenvorrichtung, Anordnung mit einer Plasmaquellenvorrichtung sowie Abstrahleinheit für eine Plasmaquellenvorrichtung
KR100589046B1 (ko) * 2004-09-23 2006-06-12 삼성전자주식회사 박막 형성 방법
US7959984B2 (en) * 2004-12-22 2011-06-14 Lam Research Corporation Methods and arrangement for the reduction of byproduct deposition in a plasma processing system
US20060218680A1 (en) * 2005-03-28 2006-09-28 Bailey Andrew D Iii Apparatus for servicing a plasma processing system with a robot
KR101180863B1 (ko) * 2005-05-31 2012-10-11 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
US7319316B2 (en) 2005-06-29 2008-01-15 Lam Research Corporation Apparatus for measuring a set of electrical characteristics in a plasma
JP4476232B2 (ja) * 2006-03-10 2010-06-09 三菱重工業株式会社 成膜装置のシーズニング方法
JP5291875B2 (ja) * 2006-11-01 2013-09-18 富士フイルム株式会社 プラズマ装置
JP2008124111A (ja) * 2006-11-09 2008-05-29 Nissin Electric Co Ltd プラズマｃｖｄ法によるシリコン系薄膜の形成方法
WO2008137433A1 (en) * 2007-05-03 2008-11-13 Sencera International Corporation Crystalline film devices, apparatuses for and methods of fabrication
JP5084426B2 (ja) * 2007-09-27 2012-11-28 富士フイルム株式会社 窒化シリコン膜の形成方法
US8119545B2 (en) * 2008-03-31 2012-02-21 Tokyo Electron Limited Forming a silicon nitride film by plasma CVD
KR101207582B1 (ko) * 2009-02-17 2012-12-05 한국생산기술연구원 유도결합플라즈마 화학기상증착법을 이용한 태양전지 제조 방법
KR20110133541A (ko) 2009-03-27 2011-12-13 스미토모덴키고교가부시키가이샤 Ｍｏｓｆｅｔ 및 ｍｏｓｆｅｔ의 제조 방법
EP2413365A4 (en) * 2009-03-27 2013-05-08 Sumitomo Electric Industries MOSFET AND MOSFET MANUFACTURING METHOD
KR101071269B1 (ko) * 2009-08-25 2011-10-10 세메스 주식회사 기판 처리 장치
JP2011187802A (ja) * 2010-03-10 2011-09-22 Mitsui Eng & Shipbuild Co Ltd 薄膜形成装置
US9279722B2 (en) 2012-04-30 2016-03-08 Agilent Technologies, Inc. Optical emission system including dichroic beam combiner
CN103117222B (zh) * 2013-01-18 2016-01-13 中国科学院半导体研究所 ART结构沟槽内生长GaAs材料HEMT器件的方法
CN103794461A (zh) * 2013-12-02 2014-05-14 青岛蓝图文化传播有限公司市南分公司 一种等离子体处理装置
CN103911599B (zh) * 2014-03-26 2016-02-10 京东方科技集团股份有限公司 一种等离子体增强化学气相沉积装置
CN113966655A (zh) * 2021-10-14 2022-01-25 常州大学 冷等离子体生物处理装置

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2943634C2 (de) * 1979-10-29 1983-09-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Epitaxiereaktor
US4363828A (en) * 1979-12-12 1982-12-14 International Business Machines Corp. Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas
GB2069008B (en) * 1980-01-16 1984-09-12 Secr Defence Coating in a glow discharge
JPH0691010B2 (ja) 1983-01-11 1994-11-14 三井東圧化学株式会社 非晶質薄膜の製法
JPS6041046A (ja) * 1983-08-16 1985-03-04 Kanegafuchi Chem Ind Co Ltd 電子写真用感光体
US4583492A (en) * 1983-12-19 1986-04-22 United Technologies Corporation High rate, low temperature silicon deposition system
JPH0630343B2 (ja) * 1985-12-28 1994-04-20 アンリツ株式会社 微結晶相を含むアモルフアスシリコン薄膜導電体
US5038712A (en) * 1986-09-09 1991-08-13 Canon Kabushiki Kaisha Apparatus with layered microwave window used in microwave plasma chemical vapor deposition process
US4933300A (en) * 1987-02-12 1990-06-12 Hideomi Koinuma Process for forming multilayer thin film
JP2629773B2 (ja) * 1987-02-12 1997-07-16 秀臣 鯉沼 多層薄膜の形成方法
JPH01127679A (ja) * 1987-03-27 1989-05-19 Canon Inc 堆積膜形成方法
EP0379828B1 (en) * 1989-01-25 1995-09-27 International Business Machines Corporation Radio frequency induction/multipole plasma processing tool
JPH02197575A (ja) * 1989-01-26 1990-08-06 Canon Inc マイクロ波プラズマｃｖｄ法及びその装置
JPH02243764A (ja) 1989-03-16 1990-09-27 Sumitomo Metal Ind Ltd 薄膜製造装置
JPH03122273A (ja) * 1989-10-06 1991-05-24 Hitachi Ltd マイクロ波を用いた成膜装置
US5284789A (en) * 1990-04-25 1994-02-08 Casio Computer Co., Ltd. Method of forming silicon-based thin film and method of manufacturing thin film transistor using silicon-based thin film
JP2795736B2 (ja) 1990-07-05 1998-09-10 キヤノン株式会社 堆積膜の形成方法
JP2841243B2 (ja) * 1990-11-19 1998-12-24 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による堆積膜形成装置
KR100255703B1 (ko) * 1991-06-27 2000-05-01 조셉 제이. 스위니 전자기 rf연결부를 사용하는 플라즈마 처리기 및 방법
EP0678325B1 (en) 1991-07-09 1999-05-06 Mitsubishi Jukogyo Kabushiki Kaisha Catalyst and method for exhaust gas purification
JPH0815218B2 (ja) * 1991-12-03 1996-02-14 三星電子株式会社 半導体装置の製造方法
EP0552490A1 (en) * 1992-01-24 1993-07-28 Applied Materials, Inc. Process for etching an oxide layer over a nitride
JP2625072B2 (ja) * 1992-09-08 1997-06-25 アプライド マテリアルズ インコーポレイテッド 電磁ｒｆ結合を用いたプラズマ反応装置及びその方法
KR100281345B1 (ko) * 1992-12-01 2001-03-02 조셉 제이. 스위니 전자기 결합성 플래너 플라즈마 장치에서의 산화물 에칭 공정
JPH06275655A (ja) * 1993-03-24 1994-09-30 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH0773997A (ja) * 1993-06-30 1995-03-17 Kobe Steel Ltd プラズマｃｖｄ装置と該装置を用いたｃｖｄ処理方法及び該装置内の洗浄方法
JPH0794421A (ja) * 1993-09-21 1995-04-07 Anelva Corp アモルファスシリコン薄膜の製造方法
DE4345229C2 (de) * 1993-09-30 1998-04-09 Reinhard Dr Schwarz Verfahren zum Herstellen von lumineszenten Elementstrukturen und Elementstrukturen
JPH07169833A (ja) * 1993-12-14 1995-07-04 Nec Corp 半導体装置及びその製造方法
TW293983B (ko) * 1993-12-17 1996-12-21 Tokyo Electron Co Ltd
JP3150027B2 (ja) * 1993-12-17 2001-03-26 東京エレクトロン株式会社 プラズマ発生装置及びこのプラズマ発生装置を用いたプラズマ処理装置
US5441768A (en) * 1994-02-08 1995-08-15 Applied Materials, Inc. Multi-step chemical vapor deposition method for thin film transistors
JP3422583B2 (ja) * 1994-03-23 2003-06-30 東京エレクトロン株式会社 処理装置
JP3336747B2 (ja) * 1994-06-09 2002-10-21 ソニー株式会社 絶縁膜の形成方法、並びに半導体装置の作製方法及び半導体装置
JPH088194A (ja) * 1994-06-16 1996-01-12 Kishimoto Sangyo Kk 気相成長機構および熱処理機構における加熱装置
DE4432066C1 (de) * 1994-09-09 1996-03-14 Lueder Ernst Verfahren zur Herstellung von Dünnschichttransistoren
US5677236A (en) * 1995-02-24 1997-10-14 Mitsui Toatsu Chemicals, Inc. Process for forming a thin microcrystalline silicon semiconductor film
JPH08260154A (ja) * 1995-03-20 1996-10-08 Toshiba Mach Co Ltd 誘導結合プラズマｃｖｄ装置
US5683548A (en) * 1996-02-22 1997-11-04 Motorola, Inc. Inductively coupled plasma reactor and process
GB2311299B (en) * 1996-03-18 2000-03-29 Hyundai Electronics Ind Inductively coupled plasma chemical vapor deposition technology

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100731998B1 (ko) * 2005-06-07 2007-06-27 주식회사 뉴파워 프라즈마 유도결합 플라즈마 소오스
CN102653859A (zh) * 2012-05-10 2012-09-05 中国电子科技集团公司第四十八研究所 一种石墨舟自动装卸片升降传递装置

Also Published As

Publication number Publication date
JPH1081973A (ja) 1998-03-31
GB9705608D0 (en) 1997-05-07
KR970067610A (ko) 1997-10-13
US5951773A (en) 1999-09-14
KR100469134B1 (ko) 2005-09-02
US6093660A (en) 2000-07-25
GB2311298A (en) 1997-09-24
GB2311298B (en) 1999-09-29
DE19711268A1 (de) 1997-10-30
DE19711267A1 (de) 1997-10-30
US6380612B1 (en) 2002-04-30
JPH1027762A (ja) 1998-01-27
GB9705612D0 (en) 1997-05-07
DE19711268B4 (de) 2004-09-16
GB2311299B (en) 2000-03-29
GB2311299A (en) 1997-09-24
KR100476039B1 (ko) 2005-07-11

Similar Documents

Publication Publication Date Title
KR970065766A (ko) 유도형 플라즈마 화학기상증착방법 및 그를 이용하여 생성된 비정질 실리콘 박막 트랜지스터
US5173761A (en) Semiconducting polycrystalline diamond electronic devices employing an insulating diamond layer
US5180690A (en) Method of forming a layer of doped crystalline semiconductor alloy material
KR0143873B1 (ko) 절연막 및 반도체장치 및 반도체 장치 제조방법
US4814842A (en) Thin film transistor utilizing hydrogenated polycrystalline silicon
Gupta et al. The preparation, properties and applications of silicon nitride thin films deposited by plasma-enhanced chemical vapor deposition
US6034001A (en) Method for etching of silicon carbide semiconductor using selective etching of different conductivity types
US4625224A (en) Thin film transistor having polycrystalline silicon layer with 0.01 to 5 atomic % chlorine
Chen et al. High field-effect-mobility a-Si: H TFT based on high deposition-rate PECVD materials
US5387542A (en) Polycrystalline silicon thin film and low temperature fabrication method thereof
KR870011702A (ko) 비결정 실리콘 전계효과 트랜지스터의 백 채널표면 안정화 방법
Wang et al. Diamond based field-effect transistors of Zr gate with SiNx dielectric layers
Hasegawa et al. Anodic oxidation of hydrogenated amorphous silicon and properties of oxide
Wolborski et al. Aluminium nitride deposition on 4H-SiC by means of physical vapour deposition
KR960008499B1 (ko) 레이저 처리방법 및 레이저 처리장치
Sugino et al. Electrical conduction mechanisms in polycrystalline chemically vapour-deposited diamond films
US4291318A (en) Amorphous silicon MIS device
Sekiya et al. High performance poly-crystalline silicon thin film transistors fabricated using remote plasma chemical vapor deposition of SiO/sub 2
EP0481777A2 (en) Method of manufacturing gate insulated field effect transistors
KR19980072454A (ko) n-형 반도체 다이아몬드의 제조방법
Kawaguchi et al. Dependence of contact resistance on metal electronegativity for B‐doped diamond films
CN112133741A (zh) 一种增强型氢终端金刚石场效应晶体管及制备方法
Oda et al. High quality a-Si: H films and interfaces prepared by VHF plasma CVD
Yoshida et al. Formation of source and drain regions for a-Si: H thin-film transistors by low-energy ion doping technique
JP2874175B2 (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
N231 Notification of change of applicant
N231 Notification of change of applicant
A201 Request for examination
N231 Notification of change of applicant
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20121207

Year of fee payment: 9

FPAY Annual fee payment

Payment date: 20131217

Year of fee payment: 10

FPAY Annual fee payment

Payment date: 20141217

Year of fee payment: 11

FPAY Annual fee payment

Payment date: 20151228

Year of fee payment: 12

FPAY Annual fee payment

Payment date: 20161226

Year of fee payment: 13

EXPY Expiration of term