KR970067610A - 유도결합형 플라즈마 cvd장치 - Google Patents
유도결합형 플라즈마 cvd장치 Download PDFInfo
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- KR970067610A KR970067610A KR1019970009217A KR19970009217A KR970067610A KR 970067610 A KR970067610 A KR 970067610A KR 1019970009217 A KR1019970009217 A KR 1019970009217A KR 19970009217 A KR19970009217 A KR 19970009217A KR 970067610 A KR970067610 A KR 970067610A
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- reaction chamber
- inductively coupled
- coupled plasma
- plasma cvd
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- 238000009616 inductively coupled plasma Methods 0.000 title claims abstract description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 4
- 238000006243 chemical reaction Methods 0.000 claims abstract 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract 6
- 239000010703 silicon Substances 0.000 claims abstract 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract 5
- 239000007789 gas Substances 0.000 claims abstract 5
- 239000001301 oxygen Substances 0.000 claims abstract 5
- 229910052760 oxygen Inorganic materials 0.000 claims abstract 5
- 238000000034 method Methods 0.000 claims abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract 2
- 230000008878 coupling Effects 0.000 claims abstract 2
- 238000010168 coupling process Methods 0.000 claims abstract 2
- 238000005859 coupling reaction Methods 0.000 claims abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000012495 reaction gas Substances 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 2
- 235000014653 Carica parviflora Nutrition 0.000 abstract 1
- 241000243321 Cnidaria Species 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 2
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Abstract
본 발명은 적어도 챔버의 일부분을 이루는 유전체창으로부터의 불순물의 오염을 방지할 수 있는 유도결합형 플라즈마 화학기상증착 장치를 제공하는 것을 목적으로 한다. 유도결합형 플라즈마 화학기상증착 장치는 적어도 일부분이 유전체창으로 둘러싸인 내부공간을 갖는 반응챔버로서, 상기 유전체창의 반응챔버내측의 표면에 산소를 포함하지 않는 실리콘층을 갖는 반응챔버; 반응챔버의 내부공간으로 공정가스를 도입하는 수단; 상기 반응챔버밖의 상기 유전체창에 인접하여 놓여있는 고주파인가가 가능한 안테나; 상기 안테나에 고주파전원을 커플링하기 위한 수단; 상기 반응챔버의 내부공간에 있는 피가공물을 가열하기 위하여 설치된 스테이지; 및 상기 반응챔버의 내부공간을 배기하기 위한 배기수단으로 이루어진다. 산호를 포함하지 않는 실리콘층을 비정질 실리콘층, 질화 실리콘층, 탄화 실리콘층을 포함한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 유도결합형 플라즈마 CVD장치의 실시예를 나타내는 설명도이다. 제2A도는 제1도의 유도결합형 플라즈마 CVD장치에 사용되는 안테나의 구조를 나타내는 개략도이다. 제2B도는 제1도의 유도결합형 플라즈마 CVD장치에 사용되는 안테나의 구조를 나타내는 개략도이다. 제3도는 본 발명의 일 실시예에 따라 제조된 유도결합형 플라즈마 CVD장치에서 증착된 비정질 실리콘 박막의 FR-IR특성을 나타내는 그래프이다. 제4도는 본 발명의 일 실시예에 따라 제조된 유도결합형 플라즈마 CVD장치에서 증착된 비정질 실리콘 박막의 전기전도도 특성을 나타내는 그래프이다.
Claims (8)
- 적어도 일부분이 유전체창(dielectric shield)으로 둘러싸인 내부공간을 갖는 진공반응챔버로서, 상기 유전체창의 반응챔버내측의 표면에 산소를 포함하지 않는 실리콘층을 갖는 진공반응챔버; 상기 반응챔버의 내부공간으로 반응가스를 도입하는 수단; 상기 반응챔버밖의 상기 유전체창에 인접하여 놓여있는, RF전력이 인가될 수 있는 안테나; 상기 안테나에 RF전원을 커플링하기 위한 수단; 상기 반응챔버의 내부공간에 있는 피가공물을 가열하기 위하여 설치된 스테이지; 및 상기 반응챔버의 내부공간을 배기하기 위한 배기수단으로 이루어진 유도결합형 플라즈마 CVD장치.
- 제1항에 있어서, 상기 산소를 포함하지 않는 실리콘층은 비정질 실리콘층인 것을 특징으로 하는 유도결합형 플라즈마 CVD장치.
- 제1항에 있어서, 상기 산소를 포함하지 않는 실리콘층은 질화 실리콘층인 것을 특징으로 하는 유도결합형 플라즈마 CVD장치.
- 제1항에 있어서, 상기 산소를 포함하지 않는 실리콘층은 탄화 실리콘층인 것을 특징으로 하는 유도결합형 플라즈마 CVD장치.
- 제1항에 있어서, 상기 공정가스 공급 수단은 상기 반응챔버에 적어도 2종류의 반응가스를 소정량 공급가능하며, 또한 상기 공급수단은 상기 챔버의 중앙부에 위치하는 링형상부를 포함하는 것을 특징으로 하는 유도결합형 플라즈마 CVD장치.
- 제5항에 있어서, 상기 공정가스 공급수단의 링형상부는 그의 둘레에 일정한 간격으로 다수의 노즐구멍이 형성되어 있는 것을 특징으로 하는 유도결합형 플라즈마 CVD장치.
- 제6항에 있어서, 상기 안테나는 나선형상(sprial shape)인 것을 특징으로 하는 유도결합형 플라즈마 CVD장치.
- 제5항에 있어서, 상기 안테나는 나선형상(sprial shape)인 것을 특징으로 하는 유도결합형 플라즈마 CVD장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
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KR19960007201 | 1996-03-18 | ||
KR96-7201 | 1996-03-18 | ||
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KR1019960021113 | 1996-06-13 | ||
KR19960021113 | 1996-06-13 | ||
KR96-21113 | 1996-06-13 |
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KR970067610A true KR970067610A (ko) | 1997-10-13 |
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KR1019970009218A KR100469134B1 (ko) | 1996-03-18 | 1997-03-18 | 유도형플라즈마화학기상증착방법및그를이용하여생성된비정질실리콘박막트랜지스터 |
KR1019970009217A KR100476039B1 (ko) | 1996-03-18 | 1997-03-18 | 유도결합형 플라즈마 cvd 장치 |
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US (3) | US5951773A (ko) |
JP (2) | JPH1081973A (ko) |
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DE (2) | DE19711268B4 (ko) |
GB (2) | GB2311299B (ko) |
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- 1997-03-18 DE DE19711268A patent/DE19711268B4/de not_active Expired - Lifetime
- 1997-03-18 KR KR1019970009218A patent/KR100469134B1/ko not_active IP Right Cessation
- 1997-03-18 JP JP9084596A patent/JPH1081973A/ja active Pending
- 1997-03-18 GB GB9705608A patent/GB2311298B/en not_active Expired - Lifetime
- 1997-03-18 KR KR1019970009217A patent/KR100476039B1/ko not_active IP Right Cessation
- 1997-03-18 JP JP9084597A patent/JPH1027762A/ja active Pending
- 1997-03-18 US US08/819,871 patent/US5951773A/en not_active Expired - Lifetime
- 1997-03-18 DE DE19711267A patent/DE19711267A1/de not_active Ceased
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100448880B1 (ko) * | 2001-09-28 | 2004-09-18 | 김성훈 | 단백질칩 기판 및 플라즈마를 이용한 단백질칩 기판의제조방법 |
KR20030046189A (ko) * | 2001-12-05 | 2003-06-12 | 변홍식 | 플라즈마 발생장치 |
Also Published As
Publication number | Publication date |
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JPH1081973A (ja) | 1998-03-31 |
GB9705608D0 (en) | 1997-05-07 |
US5951773A (en) | 1999-09-14 |
KR100469134B1 (ko) | 2005-09-02 |
US6093660A (en) | 2000-07-25 |
GB2311298A (en) | 1997-09-24 |
GB2311298B (en) | 1999-09-29 |
DE19711268A1 (de) | 1997-10-30 |
DE19711267A1 (de) | 1997-10-30 |
US6380612B1 (en) | 2002-04-30 |
JPH1027762A (ja) | 1998-01-27 |
GB9705612D0 (en) | 1997-05-07 |
DE19711268B4 (de) | 2004-09-16 |
GB2311299B (en) | 2000-03-29 |
GB2311299A (en) | 1997-09-24 |
KR970065766A (ko) | 1997-10-13 |
KR100476039B1 (ko) | 2005-07-11 |
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