KR950703795A - 감소된 밀봉 폭을 갖는 금속 전자 패키지(Method electronic package with reduced seal width) - Google Patents

감소된 밀봉 폭을 갖는 금속 전자 패키지(Method electronic package with reduced seal width) Download PDF

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Publication number
KR950703795A
KR950703795A KR1019950701466A KR19950701466A KR950703795A KR 950703795 A KR950703795 A KR 950703795A KR 1019950701466 A KR1019950701466 A KR 1019950701466A KR 19950701466 A KR19950701466 A KR 19950701466A KR 950703795 A KR950703795 A KR 950703795A
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KR
South Korea
Prior art keywords
electronic package
adhesive
cover
bases
lead frame
Prior art date
Application number
KR1019950701466A
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English (en)
Inventor
이. 테일러 데릭
마훌리카 디파크
엠. 패스퀄로니 안쏘니
에스. 브라덴 제프리
알. 호프만 폴
Original Assignee
폴 와인스타인
오린 코포레이션
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Application filed by 폴 와인스타인, 오린 코포레이션 filed Critical 폴 와인스타인
Publication of KR950703795A publication Critical patent/KR950703795A/ko

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

본 발명은 패키지 성분(12, 14)이 캐비티(24)를 형성하는 전자 패키지(30)에 관한 것이다. 반도체 장치(16)와 리드프레임(20)의 부분은 캐비티(24)의 일부분을 점유한다. 캐비티(24)의 나머지 부분은 실리콘 겔과 같은 유연한 중합체(26)로 충전된다. 상기 캐비티(24)가 총누설 손실에 대해 더 이상 영향을 받지 않기 때문에, 패키지(30)을 조립하기 위해 사용된 밀봉 폭(RW)은 감소되고, 그에 의해 반도체 장치(16)를 장착하기 위해 이용가능한 면적은 증가한다.

Description

감소된 밀봉 폭을 갖는 금속 전자 패키지(Method electronic pakage with reduced seal width)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래 기술에 공지된 접착적으로 밀봉된 금속패키지의 단면도.
제2도는 본 발명의 제1실시에에 따른 접착적으로 밀봉된 금속 패키지의 단면도.
제3도는 본 발명의 제2실시예에 따른 접착적으로 밀봉된 윈도우(window)프레임 패키지의 단면도.

Claims (11)

  1. 캐비티(24, 56)를 한정하는 베이스(12, 52)와 커버(14, 60)와, 상기 베이스(12, 52)와 커버(24, 56)사이에 배치된 리드프레임(20)과, 상기 리드프레임(20)을 상기 베이스(12, 52)에 접합하는 감소된 밀봉폭(RW)을 갖는 제1접착제(22)와, 상기 리드프레임(20)에 전기적으로 상호 연결된 반도체장치(16) 및, 상기 캐비티(24, 56)의 잔류부를 점유하는 유연한 종합체(26)를 포함하고, 상기 반도체 장치(16)와 리드프레임(2)의 일부가 상기캐비티(24, 56)의 일부를 점유하는 것을 특징으로 하는 전자 패키지.
  2. 제1항에 있어서, 상기 리드프레임(20)을 상기 커버(14)에 접합하는 제2접착제(22)를 더 포함하는 것을 특징으로 하는 전자 패키지.
  3. 제1항에 있어서, 상기 제1접착제(22)는 윈도우 프레임(54)의 일측면을 상기 리드프레임(20)에 접합하고, 제2접착제(62)는 상기 윈도우 프레임(54)의 대향 측면을 상기 커버(60)에 접합하는 것을 특징으로 하는 전자 패키지.
  4. 제2항 또는 제3항중 어느 한 항에 있어서, 상기 유연한 중합체(26)는 점성유체, 겔 및 유연한 플라스틱으로 구성된 그룹으로부터 선택되는 것을 특징으로 하는 전자 패키지.
  5. 제4항에 있어서, 상기 유연한 중합체는 겔인 것을 특징으로 하는 전자 패키지.
  6. 제4항에 있어서, 상기 제2접착제(22, 62)는 열경화성 중합체와 열가소성 중합체로 구성된 그룹으로부터 선택되는 것을 특징으로 하는 전자 패키지.
  7. 제6항에 있어서, 상기 제2접착제(22, 62)는 열가소성 중합체인 것을 특징으로 하는 전자 패키지.
  8. 제7항에 있어서, 상기 베이스(12, 52)와 상기 커버(14, 60)는 금속인 것을 특징으로 하는 전자 패키지
  9. 제8항에 있어서, 상기 베이스(12, 52)와 커버(14, 60)는 금속인 것을 특징으로 하는 전자 패키지.
  10. 제7항에 있어서, 상기 커버(14, 60)는 소정 전자기 방사에 대해 투명한 글래스인 것을 특징으로 하는 전자 패키지.
  11. 제10항에 있어서, 상기 베이스(12, 52)는 양극 산화 알루미늄이고 상기 커버(14, 60)는 이산화실리콘인 것을 특징으로 하는 전자 패키지.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950701466A 1992-10-13 1993-09-22 감소된 밀봉 폭을 갖는 금속 전자 패키지(Method electronic package with reduced seal width) KR950703795A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US959571 1992-10-13
US07/959,571 US5324888A (en) 1992-10-13 1992-10-13 Metal electronic package with reduced seal width
PCT/US1993/008891 WO1994009512A1 (en) 1992-10-13 1993-09-22 Metal electronic package with reduced seal width

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KR950703795A true KR950703795A (ko) 1995-09-20

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US (2) US5324888A (ko)
EP (1) EP0664924A4 (ko)
JP (1) JPH08502389A (ko)
KR (1) KR950703795A (ko)
AU (1) AU5132693A (ko)
CA (1) CA2145076A1 (ko)
MX (1) MX9306317A (ko)
PH (1) PH31026A (ko)
TW (1) TW241389B (ko)
WO (1) WO1994009512A1 (ko)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5585600A (en) * 1993-09-02 1996-12-17 International Business Machines Corporation Encapsulated semiconductor chip module and method of forming the same
US5455456A (en) * 1993-09-15 1995-10-03 Lsi Logic Corporation Integrated circuit package lid
DE4405710A1 (de) * 1994-02-23 1995-08-24 Bosch Gmbh Robert Vorrichtung mit einer Trägerplatte und Verfahren zum Aufbringen eines Passivierungsgels
AU2103895A (en) * 1994-04-05 1995-10-23 Olin Corporation Cavity filled metal electronic package
US6020219A (en) * 1994-06-16 2000-02-01 Lucent Technologies Inc. Method of packaging fragile devices with a gel medium confined by a rim member
US5629835A (en) * 1994-07-19 1997-05-13 Olin Corporation Metal ball grid array package with improved thermal conductivity
KR960706692A (ko) * 1994-10-14 1996-12-09 존 엠. 클락 3세 윈도우를 포함하는 집적회로 패키지 조립체 및 그 제조 방법(integrated circuit package assembly including a window and methods of manufacturing)
US5542175A (en) * 1994-12-20 1996-08-06 International Business Machines Corporation Method of laminating and circuitizing substrates having openings therein
JP3269745B2 (ja) 1995-01-17 2002-04-02 株式会社日立製作所 モジュール型半導体装置
US5844309A (en) * 1995-03-20 1998-12-01 Fujitsu Limited Adhesive composition, semiconductor device using the composition and method for producing a semiconductor device using the composition
US5566448A (en) * 1995-06-06 1996-10-22 International Business Machines Corporation Method of construction for multi-tiered cavities used in laminate carriers
US5767447A (en) * 1995-12-05 1998-06-16 Lucent Technologies Inc. Electronic device package enclosed by pliant medium laterally confined by a plastic rim member
EP0778616A3 (en) * 1995-12-05 1999-03-31 Lucent Technologies Inc. Method of packaging devices with a gel medium confined by a rim member
US5939785A (en) * 1996-04-12 1999-08-17 Texas Instruments Incorporated Micromechanical device including time-release passivant
US5894167A (en) * 1996-05-08 1999-04-13 Micron Technology, Inc. Encapsulant dam standoff for shell-enclosed die assemblies
TW392315B (en) * 1996-12-03 2000-06-01 Nippon Electric Co Boards mounting with chips, mounting structure of chips, and manufacturing method for boards mounting with chips
US5898572A (en) * 1996-12-24 1999-04-27 Decibel Instruments, Inc. Method and apparatus for the mitigation of noise generated by personal computers
US6020628A (en) * 1997-07-21 2000-02-01 Olin Corporation Optical component package with a hermetic seal
US5990418A (en) * 1997-07-29 1999-11-23 International Business Machines Corporation Hermetic CBGA/CCGA structure with thermal paste cooling
JPH1197656A (ja) * 1997-09-22 1999-04-09 Fuji Electric Co Ltd 半導体光センサデバイス
US5929515A (en) * 1997-10-01 1999-07-27 The Charles Stark Draper Laboratory, Inc. Gettering enclosure for a semiconductor device
WO1999035681A1 (en) * 1998-01-07 1999-07-15 Fed Corporation Assembly for and method of packaging integrated display devices
IL123207A0 (en) * 1998-02-06 1998-09-24 Shellcase Ltd Integrated circuit device
JP3846094B2 (ja) * 1998-03-17 2006-11-15 株式会社デンソー 半導体装置の製造方法
US6621173B1 (en) * 1998-07-23 2003-09-16 Dow Corning Toray Silicone Co., Ltd. Semiconductor device having an adhesive and a sealant
US6521989B2 (en) * 1998-10-08 2003-02-18 Honeywell Inc. Methods and apparatus for hermetically sealing electronic packages
US6753922B1 (en) 1998-10-13 2004-06-22 Intel Corporation Image sensor mounted by mass reflow
JP3395164B2 (ja) * 1998-11-05 2003-04-07 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体装置
JP2000228467A (ja) * 1998-12-02 2000-08-15 Toshiba Corp 半導体封止用樹脂組成物及び半導体装置とその製造方法
DE19958229B4 (de) * 1998-12-09 2007-05-31 Fuji Electric Co., Ltd., Kawasaki Optisches Halbleiter-Sensorbauelement
AU1744800A (en) * 1998-12-21 2000-07-12 Intel Corporation Windowed non-ceramic package having embedded frame
US6369452B1 (en) * 1999-07-27 2002-04-09 International Business Machines Corporation Cap attach surface modification for improved adhesion
US7394153B2 (en) * 1999-12-17 2008-07-01 Osram Opto Semiconductors Gmbh Encapsulation of electronic devices
EP1240808B1 (en) * 1999-12-17 2003-05-21 Osram Opto Semiconductors GmbH Encapsulation for organic led device
JP4151207B2 (ja) * 2000-08-10 2008-09-17 株式会社デンソー 半導体装置
US7222685B2 (en) * 2000-09-22 2007-05-29 Aisin Aw Co., Ltd. Drive device with electronic circuit
US6512183B2 (en) * 2000-10-10 2003-01-28 Matsushita Electric Industrial Co., Ltd. Electronic component mounted member and repair method thereof
JP4130527B2 (ja) * 2000-12-13 2008-08-06 三菱電機株式会社 半導体装置
JP2002198664A (ja) * 2000-12-26 2002-07-12 Seiko Instruments Inc 携帯電子機器
KR20030001039A (ko) * 2001-06-28 2003-01-06 동부전자 주식회사 반도체 캡슐화 구조
US6683250B2 (en) * 2001-07-25 2004-01-27 Visteon Global Technologies, Inc. Protected electronic assembly
US6933537B2 (en) * 2001-09-28 2005-08-23 Osram Opto Semiconductors Gmbh Sealing for OLED devices
JP3788760B2 (ja) * 2001-11-09 2006-06-21 三菱電機株式会社 半導体装置
US6590269B1 (en) * 2002-04-01 2003-07-08 Kingpak Technology Inc. Package structure for a photosensitive chip
JP3566957B2 (ja) * 2002-12-24 2004-09-15 沖電気工業株式会社 半導体装置及びその製造方法
DE10313835A1 (de) * 2003-03-21 2004-09-30 Tyco Electronics Pretema Gmbh & Co.Kg Baueinheit und Verfahren zur Herstellung einer solchen Baueinheit
JP4223851B2 (ja) * 2003-03-31 2009-02-12 ミツミ電機株式会社 小型カメラモジュール
JP2004363380A (ja) * 2003-06-05 2004-12-24 Sanyo Electric Co Ltd 光半導体装置およびその製造方法
US20050012197A1 (en) * 2003-07-15 2005-01-20 Smith Mark A. Fluidic MEMS device
TW593127B (en) * 2003-08-18 2004-06-21 Prime View Int Co Ltd Interference display plate and manufacturing method thereof
US7786565B2 (en) * 2003-09-04 2010-08-31 Panasonic Corporation Semiconductor apparatus including power semiconductor device constructed by using wide band gap semiconductor
US8124434B2 (en) * 2004-09-27 2012-02-28 Qualcomm Mems Technologies, Inc. Method and system for packaging a display
US7424198B2 (en) 2004-09-27 2008-09-09 Idc, Llc Method and device for packaging a substrate
US20060270106A1 (en) * 2005-05-31 2006-11-30 Tz-Cheng Chiu System and method for polymer encapsulated solder lid attach
US20070012481A1 (en) * 2005-07-18 2007-01-18 Helmut Prager Circuit board/envelope compound structure
JP4818654B2 (ja) * 2005-07-25 2011-11-16 ソニーケミカル＆インフォメーションデバイス株式会社 発光素子の封止方法
US7417307B2 (en) * 2005-07-29 2008-08-26 Hewlett-Packard Development Company, L.P. System and method for direct-bonding of substrates
US7781697B2 (en) * 2006-04-10 2010-08-24 Hewlett-Packard Development Company, L.P. Micro-display and methods
US7700414B1 (en) 2007-02-22 2010-04-20 Unisem (Mauritius) Holdings Limited Method of making flip-chip package with underfill
JP2008270518A (ja) * 2007-04-20 2008-11-06 Nec Saitama Ltd ノイズシールドケースおよび電子部品のシールド構造
US9070679B2 (en) * 2009-11-24 2015-06-30 Marvell World Trade Ltd. Semiconductor package with a semiconductor die embedded within substrates
DE102011088495A1 (de) 2011-12-14 2013-06-20 Endress + Hauser Flowtec Ag Gehäusedeckel für ein Elektronik-Gehäuse bzw. damit gebildetes Elektronik-Gehäuse
JP5956783B2 (ja) * 2012-03-02 2016-07-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN106463463B (zh) 2014-03-31 2019-07-26 穆尔泰拉生物公司 用于流体元件和设备协整的低成本封装
DE102014217351A1 (de) * 2014-08-29 2016-03-03 Robert Bosch Gmbh Modulanordnung sowie Getriebesteuermodul
EP3009774B1 (en) * 2014-10-14 2022-03-02 Carel Industries S.p.A. Control device for refrigeration and conditioning systems
CN110572975B (zh) 2018-06-05 2020-12-15 台达电子工业股份有限公司 具有定位内部电路基板功能的电源供应器及其制作方法
DE102019219381A1 (de) * 2019-12-11 2021-06-17 Zf Friedrichshafen Ag Steckeranordnung

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4079511A (en) * 1976-07-30 1978-03-21 Amp Incorporated Method for packaging hermetically sealed integrated circuit chips on lead frames
JPS5637656A (en) * 1979-09-04 1981-04-11 Nec Corp Airtight container with light transmission opening
JPS58134452A (ja) * 1982-02-05 1983-08-10 Hitachi Ltd 半導体装置およびその製造方法
JPS6150351A (ja) * 1984-08-20 1986-03-12 Oki Electric Ind Co Ltd Ｅｐｒｏｍ装置
US4709301A (en) * 1985-09-05 1987-11-24 Nec Corporation Package
JPS6263619A (ja) * 1985-09-17 1987-03-20 Kawasaki Steel Corp 軟質な非時効性薄鋼板の製造方法
JPS62145748A (ja) * 1985-12-19 1987-06-29 Mitsubishi Electric Corp 半導体装置
US4965227A (en) * 1987-05-21 1990-10-23 Olin Corporation Process for manufacturing plastic pin grid arrays and the product produced thereby
US4961106A (en) * 1987-03-27 1990-10-02 Olin Corporation Metal packages having improved thermal dissipation
US4897508A (en) * 1988-02-10 1990-01-30 Olin Corporation Metal electronic package
US5019892A (en) * 1988-02-18 1991-05-28 Amp Incorporated Chip carrier with accumulator
US5023398A (en) * 1988-10-05 1991-06-11 Olin Corporation Aluminum alloy semiconductor packages
US4939316A (en) * 1988-10-05 1990-07-03 Olin Corporation Aluminum alloy semiconductor packages
US5060114A (en) * 1990-06-06 1991-10-22 Zenith Electronics Corporation Conformable pad with thermally conductive additive for heat dissipation
US5066368A (en) * 1990-08-17 1991-11-19 Olin Corporation Process for producing black integrally colored anodized aluminum components
JPH03163227A (ja) * 1990-10-29 1991-07-15 Mitsubishi Electric Corp 電磁連結装置
NO911774D0 (no) * 1991-05-06 1991-05-06 Sensonor As Anordning ved innkapsling av et funksjonsorgan, samt fremgangsmaate for fremstilling av samme.

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PH31026A (en) 1997-12-29
EP0664924A4 (en) 1995-08-30
US5324888A (en) 1994-06-28
MX9306317A (es) 1994-04-29
AU5132693A (en) 1994-05-09
WO1994009512A1 (en) 1994-04-28
EP0664924A1 (en) 1995-08-02
JPH08502389A (ja) 1996-03-12
US5399805A (en) 1995-03-21
CA2145076A1 (en) 1994-04-28
TW241389B (ko) 1995-02-21

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