KR940022807A - 반도체장치 및 반도체장치용 금형 - Google Patents

반도체장치 및 반도체장치용 금형 Download PDF

Info

Publication number
KR940022807A
KR940022807A KR1019940006109A KR19940006109A KR940022807A KR 940022807 A KR940022807 A KR 940022807A KR 1019940006109 A KR1019940006109 A KR 1019940006109A KR 19940006109 A KR19940006109 A KR 19940006109A KR 940022807 A KR940022807 A KR 940022807A
Authority
KR
South Korea
Prior art keywords
base
lead
semiconductor device
semiconductor chip
double
Prior art date
Application number
KR1019940006109A
Other languages
English (en)
Inventor
히데오 야마나까
Original Assignee
오가 노리오
소니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오가 노리오, 소니 가부시기가이샤 filed Critical 오가 노리오
Publication of KR940022807A publication Critical patent/KR940022807A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01021—Scandium [Sc]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

CCD 에리어센서 등의 중공(中空)패키지구조를 가진 반도체장치의 코스트의 저감도 도모한다.
요부(凹部)(30)를 가진 플라스틱리드(29)를 반도체 칩(2)이 배설된 기대(21)의 표면측으로부터 배면측까지를 덮도록 씌우고, 기대(21)와의 사이의 간극(33)에 접착제(32)를 넣어서 기대(21)와 접착하도록 되어 있다. 그러므로, 윈도우프레임이 필요없게 되고, 또한 코로나 방전처리 등이 불필요하며 B스테이지의 열경화성 접착제를 사용하지 않아도 되므로, 플라스틱리드(29)를 가진 중공패키지 구조의 반도체장치를 저코스트로 제작할 수 있다. 접착제(32)로서, UV 조사경화형 접착제 또는 가시광 조사경화형 접착제를 사용한 경우에는, 접착시의 큐어타임을 단축할 수 있다.

Description

반도체장치 및 반도체장치용 금형
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 반도체장치의 실시예 1의 구성과 그 형성과정을 나타낸 공정도, 제2도는 실시예 1의 구성과 그 평면구성을 나타낸 선도, 제3도는 실시예 1의 변형예의 구성을 나타낸 선도.

Claims (11)

  1. 중공(中空)패키지구조의 반도체장치에 있어서, 표면에 반도체 칩이 배설된 기대와, 상기 기대의 표면상에 일부가 배설되고, 그 일부가 상기 반도체 칩에 전기적으로 접속되는 리드프레임과, 플라스틱리드를 가지고, 이 플라스틱리드는 요부(凹部)를 가지며, 이 요부내에 상기 반도체 칩이 수용되도록 하여 상기 기대 또는 리드프레임의 표면측으로부터 측면측까지를 덮도록 씌워지고, 또한 씌워진 상태에서 상기 기대 또는 리드프레임과의 사이의 간극에 넣어진 접착제로 상기 기대 또는 리드프레임에 접착되는 것을 특징으로 하는 반도체장치.
  2. 중공패키지구조의 반도체장치에 있어서, 양면접착테이프의 그 양면에 대향하여 배치되어 접착되어 있는 기대와 반도체 칩과, 상기 양면접착테이프의 상기 반도체 칩측의 면에 베이스필름 또는 솔더레지스트를 통해 접착되고, 또한 상기 반도체 칩의 패드부에 접속되는 인너리드를 가진 TAB 방식에 의한 칩과, 플라스틱리드를 가지고, 이 플라스틱리드는 요부를 가지며, 이 요부내에 상기 반도체 칩이 수용되도록 하여 상기 기대 또는 양면접착테이프의 표면측으로부터 측면측까지를 덮도록 씌워지고, 또한 씌워진 상태에서 상기 기대 또는 양면접착테이프와의 사이에 넣어진 접착제로 상기 기대 또는 양면접착테이프에 접착하는 것을 특징으로 하는 반도체장치.
  3. 제1항에 있어서, 상기 플라스틱리드의 요부의 주연부(周緣部)로서, 상기 반도체 칩의 표면보다 아래쪽에 스텝부가 형성된 것을 특징으로 하는 반도체장치.
  4. 제1항 또는 제2항에 있어서, 상기 기대, 리드프레임 또는 양면접착테이프와 접착제로 접착되는 상기 플라스틱리드의 그 접착부가 상기 반도체 칩의 표면보다 낮은 위치에 있도록 한 것을 특징으로 하는 반도체장치.
  5. 제1항 또는 제2항에 있어서, 상기기대, 리드프레임 또는 양면 접착테이프와 접착제로 접착되는 상기 플라스틱리드의 그 접착부가 상기 반도체 칩의 표면보다 높은 위치에 오는 경우는, 그 접착부와 상기 반도체 칩 표면과의 사이에 상기 플라스틱리드의 일부가 개재하도록 하는 구조로 한것을 특징으로 하는 반도체장치.
  6. 제1항 또는 제2항에 있어서, 상기기대, 리드프레임 또는 양면접착테이프와 접착제로 접착되는 상기 플라스틱리드의 그 접착부가 봉지부재로 봉지된 것을 특징으로 하는 반도체장치.
  7. 제2항에 있어서, 상기 TAB 방식에 의한 테이프의 아우터리드부(접속단자부)가 이 반도체장치의 1방향측으로 인출되어 있는 것을 특징으로 하는 반도체장치.
  8. 제1항 내지 제7항중 어느 한 항에 있어서, 상기기대, 리드프레임 또는 양면접착테이프와 접착제로 접착되는 상기 플라스틱리드의 상기 반도체 칩의 표면에 대향하는 면에 광학적 필터가 형성되어 있는 것을 특징으로 하는 반도체장치.
  9. 제1항 내지 제7항중 어느 한 항에 있어서, 상기기대, 리드프레임, 또는 양면접착제로 접착되는 상기 플라스틱리드의 상기 반도체 칩의 표면에 대향하는 면에 광학적 필터와 이 광학적 필터의 얼라인멘드마크가 형성되고, 상기 반도체 칩의 표면에는 상기 광학적필터의 얼라인멘트마크에 대응한 위치에 반도체 칩의 얼라인멘트마크가 형성되고, 상기 양쪽의 얼라인멘트마크 사이의 간격을 파이버스코브의 Z축조정기구로 측정하여 상기 반도체 칩 표면과 광학적 필터형성면과의 간격을 조정하고, 그 후 상기 플라스틱리드와 상기기대, 리드프레임 또는 양면접착테이프와의 사이를 접착제로 고착하도록 한 것을 특징으로하는 반도체장치.
  10. 단면(斷面) 요형(凹形)의 기대를 가지고, 상기 기대의 표면측 저면부에 반도체 칩이 배치되고, 상기기대의 표면측 주연부에 양면접착테이프를 통해 TAB 방식에 의한 테이프가 붙여지고, 이 TAB 방식에 의한 테이프중 인너리드부와 상기 반도체 칩의 패드부를 본딩한 후, 반도체 칩의 주위에 열가소성 수지 또는 접착제를 충전하여 경화시킴으로써 봉지한것을 특징으로 하는 반도체장치.
  11. 플라스틱리드를 가진 중공패키지구조의 반도체장치에 있어서의 기대와 리드프레임과의 일체성형품을 사금형과 하금형을 사용하여 형성하는 사출성형용의 금형(金型)에 있어서, 상기 일체성형품의 구조가 기대상에 일부가 배설되어 반도체 칩에 접속되는 리드프레임의 상기 일부가 인너리드면이며, 또한 상기 리드프레임의 중간부가 상기 기대중에 매입되고, 또한 이우터리드가 상기 기애로부텨 외측으로 돌출하고 있도록 된 것이ㅗ, 상기 일체성형품이 상기 상금형과 상기 하금형에 의한 사출성형으로 형성될 때에, 상기 인너리드면이 상기 상금형의 내면에 접촉하도록, 상기 리드프레임의 아우터리드부가 상기 상금형과 하금형으로 협지되는 그 상금형과 하금형의 부분에 상향의 테이퍼가 형성되어 있는 것을 특징으로 하는 반도체장체용 금형.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940006109A 1993-03-26 1994-03-26 반도체장치 및 반도체장치용 금형 KR940022807A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-68,458 1993-03-26
JP06845893A JP3161142B2 (ja) 1993-03-26 1993-03-26 半導体装置

Publications (1)

Publication Number Publication Date
KR940022807A true KR940022807A (ko) 1994-10-21

Family

ID=13374277

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940006109A KR940022807A (ko) 1993-03-26 1994-03-26 반도체장치 및 반도체장치용 금형

Country Status (3)

Country Link
US (1) US5998862A (ko)
JP (1) JP3161142B2 (ko)
KR (1) KR940022807A (ko)

Families Citing this family (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7090798B2 (en) * 1997-05-27 2006-08-15 Acushnet Company Multilayer golf ball with a thin thermoset outer layer
US6730991B1 (en) * 1996-06-11 2004-05-04 Raytheon Company Integrated circuit chip package
US6827449B1 (en) * 1997-12-31 2004-12-07 Texas Instruments Incorporated Adhesive-sealed window lid for micromechanical devices
IL123207A0 (en) * 1998-02-06 1998-09-24 Shellcase Ltd Integrated circuit device
DE19829197C2 (de) * 1998-06-30 2002-06-20 Siemens Ag Strahlungsaussendendes und/oder -empfangendes Bauelement
JP3785820B2 (ja) * 1998-08-03 2006-06-14 豊田合成株式会社 発光装置
US6130448A (en) * 1998-08-21 2000-10-10 Gentex Corporation Optical sensor package and method of making same
US6274927B1 (en) 1999-06-03 2001-08-14 Amkor Technology, Inc. Plastic package for an optical integrated circuit device and method of making
US6147389A (en) * 1999-06-04 2000-11-14 Silicon Film Technologies, Inc. Image sensor package with image plane reference
AU7054300A (en) * 1999-08-06 2001-03-05 Silicon Film Technologies, Inc. Flip-chip package with image plane reference
US6262479B1 (en) * 1999-10-05 2001-07-17 Pan Pacific Semiconductor Co., Ltd. Semiconductor packaging structure
US6329220B1 (en) * 1999-11-23 2001-12-11 Micron Technology, Inc. Packages for semiconductor die
JP3880278B2 (ja) 2000-03-10 2007-02-14 オリンパス株式会社 固体撮像装置及びその製造方法
FR2809228B1 (fr) * 2000-05-22 2003-10-17 St Microelectronics Sa Moule d'injection pour la fabrication d'un boitier semi- conducteur optique et boitier semi-conducteur optique
US6559537B1 (en) * 2000-08-31 2003-05-06 Micron Technology, Inc. Ball grid array packages with thermally conductive containers
JP2002305261A (ja) * 2001-01-10 2002-10-18 Canon Inc 電子部品及びその製造方法
US20050146025A1 (en) * 2001-02-26 2005-07-07 John Gregory Method of forming an opening or cavity in a substrate for receiving an electronic component
US6828663B2 (en) * 2001-03-07 2004-12-07 Teledyne Technologies Incorporated Method of packaging a device with a lead frame, and an apparatus formed therefrom
KR100410946B1 (ko) * 2001-05-16 2003-12-18 삼성전기주식회사 이미지 센서 모듈 및 그 제조 방법
US6861720B1 (en) 2001-08-29 2005-03-01 Amkor Technology, Inc. Placement template and method for placing optical dies
US6759266B1 (en) * 2001-09-04 2004-07-06 Amkor Technology, Inc. Quick sealing glass-lidded package fabrication method
JP4000507B2 (ja) 2001-10-04 2007-10-31 ソニー株式会社 固体撮像装置の製造方法
US6784534B1 (en) 2002-02-06 2004-08-31 Amkor Technology, Inc. Thin integrated circuit package having an optically transparent window
US7127793B2 (en) * 2002-04-24 2006-10-31 Fuji Photo Film Co., Ltd. Method of producing solid state pickup device
TWI286381B (en) * 2002-08-27 2007-09-01 Gigno Technology Co Ltd Multi-chip integrated module
US6982470B2 (en) * 2002-11-27 2006-01-03 Seiko Epson Corporation Semiconductor device, method of manufacturing the same, cover for semiconductor device, and electronic equipment
JP3898666B2 (ja) * 2003-04-28 2007-03-28 松下電器産業株式会社 固体撮像装置およびその製造方法
US7012326B1 (en) * 2003-08-25 2006-03-14 Xilinx, Inc. Lid and method of employing a lid on an integrated circuit
JP4106003B2 (ja) * 2003-09-03 2008-06-25 松下電器産業株式会社 固体撮像装置の製造方法
US6934065B2 (en) * 2003-09-18 2005-08-23 Micron Technology, Inc. Microelectronic devices and methods for packaging microelectronic devices
JP4147171B2 (ja) * 2003-10-23 2008-09-10 松下電器産業株式会社 固体撮像装置およびその製造方法
US7583862B2 (en) * 2003-11-26 2009-09-01 Aptina Imaging Corporation Packaged microelectronic imagers and methods of packaging microelectronic imagers
KR100541654B1 (ko) * 2003-12-02 2006-01-12 삼성전자주식회사 배선기판 및 이를 이용한 고체 촬상용 반도체 장치
US7253397B2 (en) * 2004-02-23 2007-08-07 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
US7253957B2 (en) * 2004-05-13 2007-08-07 Micron Technology, Inc. Integrated optics units and methods of manufacturing integrated optics units for use with microelectronic imagers
US8092734B2 (en) 2004-05-13 2012-01-10 Aptina Imaging Corporation Covers for microelectronic imagers and methods for wafer-level packaging of microelectronics imagers
US20050275750A1 (en) * 2004-06-09 2005-12-15 Salman Akram Wafer-level packaged microelectronic imagers and processes for wafer-level packaging
US7498647B2 (en) 2004-06-10 2009-03-03 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
JP2005353846A (ja) * 2004-06-10 2005-12-22 Matsushita Electric Ind Co Ltd 光学デバイス及びその製造方法
US7262405B2 (en) * 2004-06-14 2007-08-28 Micron Technology, Inc. Prefabricated housings for microelectronic imagers
US7199439B2 (en) * 2004-06-14 2007-04-03 Micron Technology, Inc. Microelectronic imagers and methods of packaging microelectronic imagers
US7294897B2 (en) * 2004-06-29 2007-11-13 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
US7232754B2 (en) 2004-06-29 2007-06-19 Micron Technology, Inc. Microelectronic devices and methods for forming interconnects in microelectronic devices
US7416913B2 (en) 2004-07-16 2008-08-26 Micron Technology, Inc. Methods of manufacturing microelectronic imaging units with discrete standoffs
US7189954B2 (en) * 2004-07-19 2007-03-13 Micron Technology, Inc. Microelectronic imagers with optical devices and methods of manufacturing such microelectronic imagers
US7402453B2 (en) * 2004-07-28 2008-07-22 Micron Technology, Inc. Microelectronic imaging units and methods of manufacturing microelectronic imaging units
US7364934B2 (en) 2004-08-10 2008-04-29 Micron Technology, Inc. Microelectronic imaging units and methods of manufacturing microelectronic imaging units
US7397066B2 (en) * 2004-08-19 2008-07-08 Micron Technology, Inc. Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers
US7223626B2 (en) * 2004-08-19 2007-05-29 Micron Technology, Inc. Spacers for packaged microelectronic imagers and methods of making and using spacers for wafer-level packaging of imagers
US7115961B2 (en) * 2004-08-24 2006-10-03 Micron Technology, Inc. Packaged microelectronic imaging devices and methods of packaging microelectronic imaging devices
US7425499B2 (en) 2004-08-24 2008-09-16 Micron Technology, Inc. Methods for forming interconnects in vias and microelectronic workpieces including such interconnects
US7429494B2 (en) * 2004-08-24 2008-09-30 Micron Technology, Inc. Microelectronic imagers with optical devices having integral reference features and methods for manufacturing such microelectronic imagers
US7276393B2 (en) * 2004-08-26 2007-10-02 Micron Technology, Inc. Microelectronic imaging units and methods of manufacturing microelectronic imaging units
US7511262B2 (en) * 2004-08-30 2009-03-31 Micron Technology, Inc. Optical device and assembly for use with imaging dies, and wafer-label imager assembly
US20070148807A1 (en) * 2005-08-22 2007-06-28 Salman Akram Microelectronic imagers with integrated optical devices and methods for manufacturing such microelectronic imagers
US7646075B2 (en) * 2004-08-31 2010-01-12 Micron Technology, Inc. Microelectronic imagers having front side contacts
US7300857B2 (en) 2004-09-02 2007-11-27 Micron Technology, Inc. Through-wafer interconnects for photoimager and memory wafers
KR100577430B1 (ko) 2004-09-03 2006-05-08 삼성전자주식회사 디스플레이 장치
US7271482B2 (en) * 2004-12-30 2007-09-18 Micron Technology, Inc. Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods
US7214919B2 (en) * 2005-02-08 2007-05-08 Micron Technology, Inc. Microelectronic imaging units and methods of manufacturing microelectronic imaging units
US7303931B2 (en) * 2005-02-10 2007-12-04 Micron Technology, Inc. Microfeature workpieces having microlenses and methods of forming microlenses on microfeature workpieces
US7190039B2 (en) * 2005-02-18 2007-03-13 Micron Technology, Inc. Microelectronic imagers with shaped image sensors and methods for manufacturing microelectronic imagers
JP4746358B2 (ja) * 2005-06-09 2011-08-10 新光電気工業株式会社 半導体装置および半導体装置の製造方法
US7795134B2 (en) * 2005-06-28 2010-09-14 Micron Technology, Inc. Conductive interconnect structures and formation methods using supercritical fluids
US20070029649A1 (en) * 2005-08-08 2007-02-08 Honeywell International Inc. Plastic lead frame with snap-together circuitry
US7262134B2 (en) * 2005-09-01 2007-08-28 Micron Technology, Inc. Microfeature workpieces and methods for forming interconnects in microfeature workpieces
US7288757B2 (en) * 2005-09-01 2007-10-30 Micron Technology, Inc. Microelectronic imaging devices and associated methods for attaching transmissive elements
US7622377B2 (en) 2005-09-01 2009-11-24 Micron Technology, Inc. Microfeature workpiece substrates having through-substrate vias, and associated methods of formation
TWI415453B (zh) * 2005-09-23 2013-11-11 Hon Hai Prec Ind Co Ltd 數位相機模組之製程
US7388284B1 (en) 2005-10-14 2008-06-17 Xilinx, Inc. Integrated circuit package and method of attaching a lid to a substrate of an integrated circuit
JP4708214B2 (ja) * 2006-02-23 2011-06-22 浜松ホトニクス株式会社 光送受信デバイス
US20070200210A1 (en) * 2006-02-28 2007-08-30 Broadcom Corporation Methods and apparatus for improved thermal performance and electromagnetic interference (EMI) shielding in integrated circuit (IC) packages
JP4786465B2 (ja) * 2006-08-21 2011-10-05 浜松ホトニクス株式会社 光学マスク部材及びその製造方法
US7656236B2 (en) 2007-05-15 2010-02-02 Teledyne Wireless, Llc Noise canceling technique for frequency synthesizer
TWI422058B (zh) * 2008-03-04 2014-01-01 Everlight Electronics Co Ltd 發光二極體封裝結構與其製造方法
US8179045B2 (en) 2008-04-22 2012-05-15 Teledyne Wireless, Llc Slow wave structure having offset projections comprised of a metal-dielectric composite stack
TWI380483B (en) * 2008-12-29 2012-12-21 Everlight Electronics Co Ltd Led device and method of packaging the same
US20100194465A1 (en) * 2009-02-02 2010-08-05 Ali Salih Temperature compensated current source and method therefor
US8362609B1 (en) 2009-10-27 2013-01-29 Xilinx, Inc. Integrated circuit package and method of forming an integrated circuit package
US8810028B1 (en) 2010-06-30 2014-08-19 Xilinx, Inc. Integrated circuit packaging devices and methods
JP2012238796A (ja) * 2011-05-13 2012-12-06 Panasonic Corp 半導体装置及び半導体装置の製造方法
US8796800B2 (en) * 2011-11-21 2014-08-05 Optiz, Inc. Interposer package for CMOS image sensor and method of making same
US9202660B2 (en) 2013-03-13 2015-12-01 Teledyne Wireless, Llc Asymmetrical slow wave structures to eliminate backward wave oscillations in wideband traveling wave tubes
US9018753B2 (en) * 2013-08-02 2015-04-28 Stmicroelectronics Pte Ltd Electronic modules
JP2017050411A (ja) * 2015-09-02 2017-03-09 株式会社東芝 光半導体装置、およびその製造方法
WO2019093245A1 (ja) * 2017-11-09 2019-05-16 富士フイルム株式会社 装置、有機層形成用組成物
JP2020129629A (ja) * 2019-02-12 2020-08-27 エイブリック株式会社 光センサ装置およびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4480262A (en) * 1982-07-15 1984-10-30 Olin Corporation Semiconductor casing
US4814943A (en) * 1986-06-04 1989-03-21 Oki Electric Industry Co., Ltd. Printed circuit devices using thermoplastic resin cover plate
US4884125A (en) * 1986-10-15 1989-11-28 Sanyo Electic Co., Ltd. Hybrid integrated circuit device capable of being inserted into socket
JPH02155256A (ja) * 1988-12-08 1990-06-14 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
JP3161142B2 (ja) 2001-04-25
US5998862A (en) 1999-12-07
JPH06283616A (ja) 1994-10-07

Similar Documents

Publication Publication Date Title
KR940022807A (ko) 반도체장치 및 반도체장치용 금형
US6509636B1 (en) Semiconductor package
KR100589922B1 (ko) 반도체 광 센서 디바이스
US7270465B2 (en) Light guide with an insert molded attachment structure for an optically active element
KR920010318B1 (ko) 반도체장치의 제조방법
US6358773B1 (en) Method of making substrate for use in forming image sensor package
JPH02307794A (ja) Ｉｃカード
JPH02265264A (ja) Ｉｃカード用モジュール
US5192682A (en) Manufacturing method for thin semiconductor device assemblies
US6972497B2 (en) Optical semiconductor device and method of manufacture
KR970700369A (ko) 집적회로패키지와 그 제조방법
US20070292982A1 (en) Method for Manufacturing Transparent Windows in Molded Semiconductor Packages
KR940001333A (ko) 수지봉합형 고체촬상소자 패키지 및 그 제조방법
CN108649045B (zh) 封装结构和摄像头模组
KR20040014420A (ko) 패키지된 전기 구성 요소 및 전기 구성 요소의 패키지를위한 방법
WO2005119757A3 (en) Packaged integrated circuit devices
US20050029633A1 (en) Optical semiconductor device and method of manufacturing the same
KR950015728A (ko) 표면 실장형 반도체 장치
JPH06120366A (ja) 半導体装置
US20040211882A1 (en) Image sensor having a rough contact surface
KR940016718A (ko) 성형 반도체장치 및 성형 반도체장치의 제조방법
US20040150061A1 (en) Package structure of a photosensor
KR940010290A (ko) 고체촬상소자 패키지 및 그 제조방법
JPH06125019A (ja) 半導体装置
KR970013255A (ko) 요홈이 형성된 리드프레임 패드 및 그를 이용한 칩 패키지

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid