KR890003023A - 수지봉지형 반도체장치 그 제조방법 - Google Patents

수지봉지형 반도체장치 그 제조방법 Download PDF

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KR890003023A
KR890003023A KR1019880009236A KR880009236A KR890003023A KR 890003023 A KR890003023 A KR 890003023A KR 1019880009236 A KR1019880009236 A KR 1019880009236A KR 880009236 A KR880009236 A KR 880009236A KR 890003023 A KR890003023 A KR 890003023A
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semiconductor chip
resin
conductive member
cured
semiconductor device
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KR1019880009236A
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가쓰토시 미네
아케미 쿄오고
키미오 야마카와
카스미 나카요시
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모리나카 마사미
토오레이 시리콘가부시키가이샤
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Publication of KR890003023A publication Critical patent/KR890003023A/ko

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Abstract

내용없음

Description

수지봉지(封止)형 반도체장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명 일실시예의 수지봉지형 IC의 단면도이고, 제 2도는 본 발명일실시예의 분체상 에폭시수지로 봉지한 SIP형 하이브리드 IC의 단면도이며, 제 3도는 본 발명 일실시예의 용액상 페놀수지로 봉지한 DIP형 하이브리드 IC의 단면도이다.

Claims (7)

  1. 반도체칩이 도전부재에 의해 외부 접속용 리이드선에 전기적으로 접속되고 이 반도체칩의 표면 및 도전부재중 적어도 반도체칩에 근접한 부분이 경화 실기콘층에 의해 접착 피복된 수지봉지형 반도체장치에 있어서, 경화실리콘층의 표면을 자외선조사처리하고 자외선조사처리된 경화실리콘층 표면의 위를 피복하는 봉지형 수지와 접착 일체화하여서 됨을 특징으로 하는 수지봉지형 반도체 장치.
  2. 제 1항에 있어서, 경화실콘층이 열경화성·자기 접착성 실리콘 조성물을 경화 시켜서 된 것임을 특징으로 하는 수지봉지형 반도체 장치.
  3. 제 2항에 있어서, 열경화성·자기접착성 실리콘 조성물이 부가반응 중합형의 것임을 특징으로 하는 수지봉지혀 반도체 장치.
  4. 반도체칩이 도전부재에 의해 외부 접속용 리이드선에 전기적으로 접속된 반도체장치의 반도체칩 표면 및 도전부재중 적어도 반도체칩에 근접한 부분을 경화성·자기접착성 실리콘 조성물로 피복하고 경화성·자기접착성 실리콘 조성물을 경화시켜서 반도체표면 및 도전부재중 적어도 반도체칩에 근접한 부분에 접착한 경화실리콘층을 형성하고, 경화 실리콘층에 자외선을 조사한 다음, 자외선조사처리한 경화 실리콘층 표면을 피복하는 봉지용 수지로 봉지성형함을 특징으로 하고, 반도체칩이 도전부재에 의해 외부 접속용 리이드선에 전기적으로 접속되고 반도체칩 표면및 도전부재중 적어도 반도체칩에 근접한 부분이 경화 실리콘층으로 접착 피복된 수지봉지형 반도체장치에 있어서 경화 실리콘층의 표면이 자외선조사처리되고 자외선조사처리된 경화 실리콘층 표면위를 피복하는 봉지용 수지와 접착 일체화함을 특징으로 하는 수지봉지형 반도체장치의 제조방법.
  5. 제 4항에 있어서, 경화성·자기접착성 실리콘 조성물이 열경화성이거나 부가반응 경화형으 것임을 특징으로 하는 제조방법.
  6. 반도체칩이 도전부재에 의해 외부 접속용 리이드선에 전기적으로 접속된 반도체장치의 반도체칩 표면 및 도전부재중 적어도 반도체칩에 근접한 부분을 열경화성·자기접착성 실리콘 조성물로 피복하고 열경화성·자기접착성 실리콘 조성물에 자외선을 조사하면서 가열경화시켜서 반도체칩 표면 및 도전부재중 적어도 반도체 칩에 근접한 부분에 접착한 경화 실리콘층을 형성한후 자외선조사처리된 경화 실리콘층 표면을 피복하는 봉지용 수지로 봉지성형함을 특징으로 하며, 반도체칩이 도전부재에 의해 외부 접속용 리이드선에 전기적으로 접속되고 반도체칩 표면 및 도전부재중 적어도 반도체칩에 근접한 부분이 경화 실리콘층으로 접착피복된 수지봉지형 반도체장치에 있어서, 경화실리콘층의 표면이 자외선조사처리되고 자외선조사처리된 경화실리콘층 표면위를 피복하는 봉지용 수지와 접착 일체함을 특징으로 하는 수지봉지형 반도체장치의 제조방법
  7. 제 6항에 있어서, 열경화성, 자기접착성 실리콘 조성물이 부가반응 경화형의 것임을 특징으로 하는 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880009236A 1987-07-22 1988-07-22 수지봉지형 반도체장치 그 제조방법 KR890003023A (ko)

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EP0357802A1 (en) 1990-03-14
US5036024A (en) 1991-07-30
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