HK89595A - Methods of manufacture of a resin-sealed semiconductor device - Google Patents

Methods of manufacture of a resin-sealed semiconductor device

Info

Publication number
HK89595A
HK89595A HK89595A HK89595A HK89595A HK 89595 A HK89595 A HK 89595A HK 89595 A HK89595 A HK 89595A HK 89595 A HK89595 A HK 89595A HK 89595 A HK89595 A HK 89595A
Authority
HK
Hong Kong
Prior art keywords
manufacture
resin
methods
semiconductor device
sealed semiconductor
Prior art date
Application number
HK89595A
Other languages
English (en)
Inventor
Mine Katsutoshi
Kogo Akemi
Yamakawa Kimio
Nakayoshi Kazumi
Original Assignee
Toray Silicone Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Silicone Co filed Critical Toray Silicone Co
Publication of HK89595A publication Critical patent/HK89595A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49121—Beam lead frame or beam lead device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
HK89595A 1987-07-22 1995-06-08 Methods of manufacture of a resin-sealed semiconductor device HK89595A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18307487A JP2585006B2 (ja) 1987-07-22 1987-07-22 樹脂封止型半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
HK89595A true HK89595A (en) 1995-06-16

Family

ID=16129296

Family Applications (1)

Application Number Title Priority Date Filing Date
HK89595A HK89595A (en) 1987-07-22 1995-06-08 Methods of manufacture of a resin-sealed semiconductor device

Country Status (5)

Country Link
US (1) US5036024A (xx)
EP (1) EP0357802B1 (xx)
JP (1) JP2585006B2 (xx)
KR (2) KR0146294B1 (xx)
HK (1) HK89595A (xx)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2974700B2 (ja) * 1989-11-30 1999-11-10 東レ・ダウコーニング・シリコーン株式会社 導電性接着剤
JPH0777258B2 (ja) * 1990-03-16 1995-08-16 株式会社東芝 半導体装置
US5086018A (en) * 1991-05-02 1992-02-04 International Business Machines Corporation Method of making a planarized thin film covered wire bonded semiconductor package
US5220197A (en) * 1991-07-22 1993-06-15 Silicon Power Corporation Single inline packaged solid state relay with high current density capability
US5134094A (en) * 1991-07-22 1992-07-28 Silicon Power Corporation Single inline packaged solid state relay with high current density capability
SG68542A1 (en) * 1993-06-04 1999-11-16 Seiko Epson Corp Semiconductor device and manufacturing method thereof
NL9400766A (nl) * 1994-05-09 1995-12-01 Euratec Bv Werkwijze voor het inkapselen van een geintegreerde halfgeleiderschakeling.
US5987739A (en) * 1996-02-05 1999-11-23 Micron Communications, Inc. Method of making a polymer based circuit
JPH1036510A (ja) * 1996-07-26 1998-02-10 Toray Dow Corning Silicone Co Ltd 電気部品およびその製造方法
US6787389B1 (en) * 1997-10-09 2004-09-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having pads for connecting a semiconducting element to a mother board
US6251211B1 (en) 1998-07-22 2001-06-26 Micron Technology, Inc. Circuitry interconnection method
CN1325558C (zh) * 1998-08-21 2007-07-11 日立化成工业株式会社 糊状组合物、使用了该组合物的保护膜及半导体装置
JP3406270B2 (ja) * 2000-02-17 2003-05-12 沖電気工業株式会社 半導体装置及びその製造方法
JP2002009097A (ja) * 2000-06-22 2002-01-11 Oki Electric Ind Co Ltd 半導体装置とその製造方法
US6916682B2 (en) * 2001-11-08 2005-07-12 Freescale Semiconductor, Inc. Semiconductor package device for use with multiple integrated circuits in a stacked configuration and method of formation and testing
US6849806B2 (en) * 2001-11-16 2005-02-01 Texas Instruments Incorporated Electrical apparatus having resistance to atmospheric effects and method of manufacture therefor
JP4583757B2 (ja) * 2001-11-23 2010-11-17 台湾積體電路製造股▲ふん▼有限公司 集積回路を包む方法
JP3865639B2 (ja) * 2002-01-28 2007-01-10 信越化学工業株式会社 半導体封止用シリコーン組成物および半導体装置
US20040075170A1 (en) * 2002-10-21 2004-04-22 Yinon Degani High frequency integrated circuits
US7170188B2 (en) * 2004-06-30 2007-01-30 Intel Corporation Package stress management
DE102004039693B4 (de) * 2004-08-16 2009-06-10 Infineon Technologies Ag Vergussmasse, Chipmodul und Verfahren zur Herstellung eines Chipmoduls
US7633157B2 (en) * 2005-12-13 2009-12-15 Micron Technology, Inc. Microelectronic devices having a curved surface and methods for manufacturing the same
JP4670905B2 (ja) * 2007-06-18 2011-04-13 セイコーエプソン株式会社 接合方法、接合体、液滴吐出ヘッドおよび液滴吐出装置
TW201205745A (en) * 2010-07-23 2012-02-01 Global Unichip Corp Semiconductor packaging structure and the forming method
JP5882332B2 (ja) * 2010-09-06 2016-03-09 ヘレーウス ノーブルライト ゲゼルシャフト ミット ベシュレンクテルハフツングＨｅｒａｅｕｓ Ｎｏｂｌｅｌｉｇｈｔ ＧｍｂＨ オプトエレクトロニクスチップオンボードモジュール用のコーティング法
EP2881724A1 (en) * 2013-12-09 2015-06-10 BAE Systems PLC Manufacturing method for a corrosion sensor having double-encapsulated wire connections
AU2014361093B2 (en) 2013-12-09 2016-12-15 Bae Systems Plc Corrosion sensor having double-encapsulated wire connections and manufacturing method for it
JP7134137B2 (ja) * 2019-05-31 2022-09-09 三菱電機株式会社 半導体装置
US11139268B2 (en) * 2019-08-06 2021-10-05 Advanced Semiconductor Engineering, Inc. Semiconductor package structure and method of manufacturing the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4143456A (en) * 1976-06-28 1979-03-13 Citizen Watch Commpany Ltd. Semiconductor device insulation method
JPS55127023A (en) * 1979-03-26 1980-10-01 Shin Etsu Chem Co Ltd Semiconductor device
JPS5623759A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Resin-sealed semiconductor device and manufacture thereof
JPS57181146A (en) * 1981-04-30 1982-11-08 Hitachi Ltd Resin-sealed semiconductor device
JPS5848429A (ja) * 1981-09-17 1983-03-22 Seiko Keiyo Kogyo Kk 半導体装置の封止方法
JPS5884449A (ja) * 1981-11-16 1983-05-20 Hitachi Ltd 磁気バブルメモリデバイス及びその製造方法
JPS5933841A (ja) * 1982-08-19 1984-02-23 Nec Corp 樹脂封止型半導体装置
JPS5987840A (ja) * 1982-11-10 1984-05-21 Toray Silicone Co Ltd 半導体装置
JPS59188947A (ja) * 1983-04-11 1984-10-26 Matsushita Electronics Corp 樹脂封止形半導体装置の製造方法
JPS59197154A (ja) * 1983-04-22 1984-11-08 Hitachi Ltd 半導体装置およびその製造法
JPS60741A (ja) * 1983-06-16 1985-01-05 Toshiba Mach Co Ltd 電子線露光方法
DE3442131A1 (de) * 1984-11-17 1986-05-22 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Verfahren zum einkapseln von mikroelektronischen halbleiter- und schichtschaltungen
JPS621750A (ja) * 1985-06-27 1987-01-07 Toray Silicone Co Ltd 室温硬化性オルガノポリシロキサン組成物
JPS6269538A (ja) * 1985-09-20 1987-03-30 Mitsubishi Electric Corp 樹脂封止半導体装置
JPH0642518B2 (ja) * 1985-09-30 1994-06-01 三菱電機株式会社 半導体装置
FR2592221B1 (fr) * 1985-12-20 1988-02-12 Radiotechnique Compelec Procede d'encapsulation d'un composant electronique au moyen d'une resine synthetique

Also Published As

Publication number Publication date
JP2585006B2 (ja) 1997-02-26
KR0146294B1 (ko) 1998-08-01
EP0357802A1 (en) 1990-03-14
JPS6427249A (en) 1989-01-30
EP0357802B1 (en) 1994-02-16
US5036024A (en) 1991-07-30
KR890003023A (ko) 1989-04-12

Similar Documents

Publication Publication Date Title
HK89595A (en) Methods of manufacture of a resin-sealed semiconductor device
EP0345875A3 (en) A method of manufacturing a semiconductor device
GB8813738D0 (en) Semiconductor device & method of manufacturing same
KR930005944B1 (en) Manufacturing method of semiconductor device
GB8815442D0 (en) Method of manufacturing semiconductor device
HK1014293A1 (en) A method of manufacturing a semiconductor device
HK30297A (en) Method of manufacturing a semiconductor device
EP0333583A3 (en) Method of producing a semiconductor device
EP0370775A3 (en) Method of manufacturing semiconductor device
EP0214690A3 (en) A method of manufacturing a semiconductor device
GB8914627D0 (en) A method of manufacturing a semiconductor device
HK27996A (en) A method of producing a semiconductor integrated circuit device
EP0413491A3 (en) Method of making a semiconductor device
GB8923806D0 (en) A method of manufacturing a semiconductor device
GB8801171D0 (en) Method of manufacturing semiconductor device
GB2206446B (en) Method of manufacturing semiconductor device
EP0238418A3 (en) Method of manufacturing semiconductor device having package structure
EP0187421A3 (en) Method of manufacturing a semiconductor device
GB8921262D0 (en) A method of manufacturing a semiconductor device
GB2230899B (en) A production method of a semiconductor device
EP0294888A3 (en) A method of manufacturing a semiconductor device
KR900008623B1 (en) Method of producing a semiconductor device
GB2222308B (en) A method of producing a semiconductor device
GB2183093B (en) Method of manufacturing a semiconductor device
GB8914626D0 (en) A method of manufacturing a semiconductor device

Legal Events

Date Code Title Description
PF Patent in force