KR920700476A - 수지봉지형 반도체장치 및 제조방법 - Google Patents

수지봉지형 반도체장치 및 제조방법

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Publication number
KR920700476A
KR920700476A KR1019900700503A KR900700503A KR920700476A KR 920700476 A KR920700476 A KR 920700476A KR 1019900700503 A KR1019900700503 A KR 1019900700503A KR 900700503 A KR900700503 A KR 900700503A KR 920700476 A KR920700476 A KR 920700476A
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South Korea
Prior art keywords
semiconductor chip
resin
silicon layer
conductive member
semiconductor device
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KR1019900700503A
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English (en)
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KR0157844B1 (ko
Inventor
아케미 코오고
가쓰토시 미네
Original Assignee
모리나카 마사미
토오레이 시리콘 가부시키가이샤
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Priority claimed from JP17788888A external-priority patent/JP2701045B2/ja
Priority claimed from JP1157329A external-priority patent/JP2701072B2/ja
Application filed by 모리나카 마사미, 토오레이 시리콘 가부시키가이샤 filed Critical 모리나카 마사미
Publication of KR920700476A publication Critical patent/KR920700476A/ko
Application granted granted Critical
Publication of KR0157844B1 publication Critical patent/KR0157844B1/ko

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Abstract

내용 없음

Description

수지봉지형 반도체 장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 예비시험으로서 사용되고 있는 접착테스트용 샘플의 단면도이고,
제2도는 실시예1의 접착발형시간을 나타내는 그래프이며,
제3도는 실시예1의 수지봉지형 IC의 단면도임.

Claims (10)

  1. 반도체 칩이 도전부재에 의하여 외부 접속용 리이드선에 전기적으로 접속되고, 상기 반도체 칩 표면 및 상기 도전부재의 적어도 상기 반도체 칩에 근접한 부분이 경화실리콘층으로 피복된 수지봉지형 반도체장치에 있어서, 상기 경화실리콘층으 표면이 오존처리되어 있고, 오존처리된 상기 경화실리콘층 표면이 그의 위를 피복하는 봉지수지와 접착일체화하여 있는 것을 특징으로 하는 수지봉지형 반도체장치.
  2. 셩화실리콘층의 표면이 오존처리에 가하여 자외선 조사처리되어 있고,오존초리에 가하여 자외선 조사처리된 상기 경화실리콘층 표면이 그의 위플 피복하는 봉지용수지와 접착일체화하여 있는 특허청구의 범위 제1항 기재의 수지봉지형 반도체 장치.
  3. 경화실리콘층이 열경화성, 자기접착성 실리콘 조성물을 경화시킨 것인, 특허청구의 범위 제1항또는 제2항 기재의 수지봉지형 반도체장치.
  4. 열경화성, 자기접착성, 실리콘조성물이 부가반응경화형의 것인 특허청구의 범위 제3항 기재의 수지봉지형 반도체장치.
  5. 반도체 칩이 반도체 발광소자왕 반도체 수광소자의 조합으로 되어 있고, 투광성 경화실리콘층이 양소자 사이에 개재하여 양소자를 광학적으로 결합시키고 있는 것을 특징으로 하는 특허청구의 범위 제2항 기재의 수지봉지형 반도체장치.
  6. 반도체 칩이 도전부재에 의하여 외부 접속용 리이드선에 전기적으로 접속된 반도체장치의 상기 반도체 칩 표면 및 상기 도전부재의 적어도 상기 반도체 칩에 근접한 부분을 경화성, 자기 접착성 실리콘조성물로 피복하고, 이 경화성, 자기접착성 실리콘조성을 경화시켜서, 상기 반도체 칩 표면 및 상기 도전부재의 적어도 상기 반도체 칩에 근접한 부분에 접착한 경화 실리콘층을 형성하고, 상기 경화실리콘층에 오존처리를 행하며, 이어서 오존처리된 상기 경화 실리콘층 표면을 피복하도록 봉지수지로 봉지성형하는 것을 특징으로 하는 특허청구의 법위 제1항 기재의 수지봉지형 반도체장치의 제조방법.
  7. 반도체 칩이 도전부재에 의하여 외부 접속용 리이드선에 전기적으로 접속된 반도체장치의 상기 반도체 칩 표면 및 상기 도전부재의 적어도 상기 반도체 칩에 근접한 부분을 경화성, 자기 접착성 실리콘조성물로 피복하고, 이 경화성, 자기접착성 실리콘조성을 경화시켜서, 상기 반도체 칩 표면 및 상기 도전부재의 적어도 상기 반도체 칩에 근접한 부분에 접착한 경화 실리콘층을 형성하고, 상기 경화실리콘층에 오존처리에 가하여 자외선 조사를 하고, 이어서 오존과 자외선 조사로서 처리한 상기 경화실리콘층 표면을 피복하도록 봉지수지로 봉지성형하는 것을 특징으로 하는 특허청구의 범위 제2항 기재의 수지봉지형 반도체장치의 제조방법.
  8. 반도체 칩이 도전부재에 의하여 외부 접속용 리이드선에 전기적으로 접속된 반도체장치의 상기 반도체 칩 표면 및 상기 도전부재의 적어도 상기 반도체 칩에 근접한 부분을 경화성, 자기 접착성 실리콘조성물로 피복하고, 이 열경화성, 자기접착성 실리콘조성물에 오죤처리를 행하면서 비교적 저온으로 가열 경화시켜서상기 반도체 칩 표면 및 상기 도전부재의 적어도 상기 반도체 칩에 근접한 부분에 접착한 경화실리콘층을 형성하며, 이어서 오죠처리된 상기 경화실리콘층 표면을 피복하도록 봉지수지로 봉지성형하는 것을 특징으로 하는특허청구의 범위 제1항 기재의 수지봉지형 반도체장치의 제조방법.
  9. 반도체 칩이 도전부재에 의하여 외부 접속용 리이드선에 전기적으로 접속된 반도체장치의 상기 반도체 칩 표면 및 상기 도전부재의 적어도 상기 반도체 칩에 근접한 부분을 경화성, 자기 접착성 실리콘 조성물로 피복하고, 이 열경화성·자기접착성 실리콘조성물에 오존처리에 가하여 자외선을 조사하면서 비교적 저온으로 가열경화시켜서 상기 반도체 칩 표면 및 상기 도전부재의 적어도 상기 반도체 칩에 근접한 부분에 접착한 경화 실리콘층을 형성하며, 이어서 오존처리에 가하여 자외선 조사처리도니 상기 경화실리콘층 표면을 피복하도록 봉지수지로 봉지성형하는 것을 특징으로 하는 특허청구의 범위 제2항 기재의 수지봉지형 반도체장치의 제조방법.
  10. 반도체 칩이 반도체 발광칩과, 반도체 수광칩의 조하되어 있고,경화성, 자기접착성 실리콘 조성물 및 경화실리콘층이 투광성이며, 양소자 사이에 개재하여 양소자를 광학적으로 결합시켜 있는 것을 특징으로 하는 특허청구의 범위 제6항, 제7항, 제8항또는 어느 하나에 기재된 수지봉지형 반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900700503A 1988-07-15 1989-07-14 수지봉지형 반도체장치 및 제조방법 KR0157844B1 (ko)

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JP63-177888 1988-07-15
JP17788888A JP2701045B2 (ja) 1988-07-15 1988-07-15 樹脂封止型半導体装置およびその製造方法
JP1157329A JP2701072B2 (ja) 1989-06-20 1989-06-20 樹脂封止型光結合半導体装置およびその製造方法
JP1-157329 1989-06-20
PCT/JP1989/000711 WO1990000814A1 (en) 1988-07-15 1989-07-14 Semiconductor device sealed with resin and a method of producing the same

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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW301047B (ko) * 1993-03-15 1997-03-21 Ibm
KR100377981B1 (ko) * 1994-06-07 2003-05-27 텍사스 인스트루먼츠 인코포레이티드 성형화합물큐어링방법
DE9413550U1 (de) * 1994-08-23 1996-01-11 Dylec Ltd., Saint Peter Port, Guernsey Halbleiteranordnung mit wenigstens einem Halbleiterbauelement
US5708300A (en) * 1995-09-05 1998-01-13 Woosley; Alan H. Semiconductor device having contoured package body profile
JPH1036510A (ja) * 1996-07-26 1998-02-10 Toray Dow Corning Silicone Co Ltd 電気部品およびその製造方法
DE19634845C1 (de) * 1996-08-28 1998-02-26 Siemens Ag Verfahren zur Optimierung der Adhäsion zwischen Preßmasse und Passivierungsschicht in einem Kunststoffchipgehäuse
US6369185B1 (en) * 1999-03-31 2002-04-09 Dow Corning Toray Silicone Co., Ltd. Curable organopolysiloxane composition, cured products formed therefrom and unified articles
JP4620303B2 (ja) 2001-09-20 2011-01-26 株式会社東海理化電機製作所 半導体装置及びその製造方法
JP4583757B2 (ja) 2001-11-23 2010-11-17 台湾積體電路製造股▲ふん▼有限公司 集積回路を包む方法
DE102004019973B4 (de) * 2004-02-29 2006-07-13 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines kontaminationsgeschützten, optoelektronischen Bauelements und kontaminationsgeschütztes, optoelektronisches Bauelement
DE102006010729A1 (de) 2005-12-09 2007-06-14 Osram Opto Semiconductors Gmbh Optisches Element, Herstellungsverfahren hierfür und Verbund-Bauteil mit einem optischen Element
US8697458B2 (en) 2009-04-22 2014-04-15 Shat-R-Shield, Inc. Silicone coated light-emitting diode
CA2759638A1 (en) * 2009-04-22 2010-10-28 Shat-R-Shield, Inc. Silicone coated light-emitting diode
DE102016002011A1 (de) 2016-02-20 2017-08-24 Universität Kassel Verfahren zur Haftverbesserung von Silikon auf einer thermoplastischen Oberfläche

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS513578A (ja) * 1974-06-27 1976-01-13 Nippon Electric Co Jushimoorudogatahandotaisochi
JPS5987840A (ja) * 1982-11-10 1984-05-21 Toray Silicone Co Ltd 半導体装置
JPS61230344A (ja) * 1985-04-05 1986-10-14 Toray Silicone Co Ltd 樹脂封止型半導体装置
JPS62133741A (ja) * 1985-12-06 1987-06-16 Nec Corp パツケ−ジ
JPH0513578A (ja) * 1991-07-01 1993-01-22 Toshiba Corp 論理セル配置方法
JP3358631B2 (ja) * 1993-05-17 2002-12-24 三菱瓦斯化学株式会社 メタノ−ルの脱水素方法

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