KR950701769A - 반도체 장치(Semiconductor device) - Google Patents
반도체 장치(Semiconductor device)Info
- Publication number
- KR950701769A KR950701769A KR1019940704091A KR19940704091A KR950701769A KR 950701769 A KR950701769 A KR 950701769A KR 1019940704091 A KR1019940704091 A KR 1019940704091A KR 19940704091 A KR19940704091 A KR 19940704091A KR 950701769 A KR950701769 A KR 950701769A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor chip
- circuit board
- semiconductor device
- overlapping
- hole
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000004020 conductor Substances 0.000 claims abstract 8
- 238000000034 method Methods 0.000 claims abstract 3
- 125000006850 spacer group Chemical group 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract 3
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49572—Lead-frames or other flat leads consisting of thin flexible metallic tape with or without a film carrier
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Abstract
절연성의 가요성 기재(21)를 구비하는 회로기판(2)에 대해서는 그 디바이스 홀(23)에 반도체 칩(3)이 배치되어 있다.
반도체 칩(3)의 범프(31)는 도체 패턴(22)중에 디바이스 홀(23)내로 돌출하는 리드부분(221)에 싱글 포인트 본딩법에 의해 접합되어 있다. 회로 기판(2)에는 디바이스 홀(23)의 네모서리부분에 반도체 칩(3)과 겹쳐 합쳐지는 기재(21)의 중첩부(211)를 가지는 동시에 디바이스 홀(23)을 4개의 구멍(231 내지 234)으로 분할하는 중첩부(212)도 가진다. 이들 중첩부(211,212)와 겹쳐지는 반도체 칩(2)의 면상에는 도체 패턴(22)과 접합되지 않고 회로기판(2)과 반도체 칩(3) 사이에 개재하여 거기에서 소정의 간극을 확보하는 더미 범프(32)를 갖는다. 또한, 중첩부(212)에는 구벙(231 내지 234)에서 몰드재를 주입한 때에 공기를 빼기 위한 관통 구멍(230)이 형성되어 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 따른 반도체 장치의 구성을 도시하는 평면도,
제2A도는 제1도의 I-Ⅱ선을 따라 취한 종단면도,
제2A도는 제1도의 I-Ⅲ선을 따라 취한 종단면도,
제3A도는 본 발명의 제1실시예에 따른 반도체 장치의 구조를 본딩전의 상태에서 모식적으로 도시하는 종단면도,
제3B도는 본 발명의 제1실시예에 다른 반도체 장치의 구조를 본딩후의 상태에서 모식적으로 도시하는 종단면도.
Claims (11)
- 절연성의 기재에 도체 패턴이 형성된 회로 기판과, 이 회로 기판의 디바이스 홀에 배치된 반도체 칩을 가지며, 상기 도체 패턴중에서 상기 디바이스 홀내로 돌출하는 리드부분과 상기 반도체 칩의 범프가 접합되어 있는 반도체 장치에 있어서, 상기 회로기판은 상기 반도체 칩과 겹쳐 합쳐지는 중첩부를 가지고, 이 중첩부및 그것과 겹쳐지는 상기 반도체 칩면상의 적어도 한쪽측에는 상기 리드부분과 상기 범프의 접합 공정 전후에 두께가 변화하지 않는 스페이서부가 형성되고, 이 스페이서부가 상기 회로 기판과 상기 반도체 칩과의 사이에 개재하여 거기에 소정의 간극을 확보할 수 있는 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 상기 스페이서부는 상기 중첩부가 겹쳐지는 상기 반도체 칩의 면상에서 상기 도체 패턴과 접합되지 않고, 상기 회로기판과 상기 반도체 칩과의 사이에 개재하여 거기에서 소정의 간극을 확보하는 더미 범프인 것을 특징으로 하는 반도체 장치.
- 제2항에 있어서, 상기 중첩부에는 상기 도체 패턴이 상기 더미 범프에 겹쳐지고 있는 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 상기 스페이서부는 상기 중첩부측에서 상기 접합용 전극과 접합되지 않고, 상기 회로기판과 상기 반도체 칩과의 사이에 개재하여 거기에서 소정의 간극을 확보하는 상기 도체 패턴의 돌기인 것을 특징으로 하는 반도체 장치.
- 제4항에 있어서, 상기 반도체 칩은 상기 접합용 전극으로서의 범프를 가지고, 상기 돌기와 겹쳐지는 위치에는 그것과 접합하지 않는 더미 범프를 가지는 것을 특징으로 하는 반도체 장치.
- 제4항에 있어서, 상기 반도체 칩은 상기 접합용 전극으로서의 패드를 가지고, 상기 돌기와 겹쳐지는 위치에는 그것과 접합하지 않는 더미 패드를 가지는 것을 특징으로 하는 반도체 장치.
- 제1항 내지 제6항중 어느 한 항에 있어서, 상기 디바이스 홀은 대략 사각형의 윤곽을 가지고 그 네모서리에 상기 중첩부가 있는 것을 특징으로 하는 반도체 장치.
- 제7항에 있어서, 상기 중첩부는 상기 디바이스 홀의 각 변부분에도 있는 것을 특징으로 하는 반도체 장치.
- 제1항 내지 제8항중 어느 한 항에 있어서, 상기 중첩부는 상기 디바이스 홀 내측에 까지 형성되어 상기 디바이스 홀을 복수의 구멍으로 분할하고 있는 것을 특징으로 하는 반도체 장치.
- 제9항에 있어서, 상기 중첩부는 상기 디바이스 홀의 대략 중심 위치를 관통하고, 상기 디바이스 홀을 복수의 구멍으로 분할해두며, 그 중심 위치에 대응하는 부분에는 상기 중첩부에 관통 구멍이 형성되어 있는 것을 특징으로 하는 반도체 장치.
- 제9항 또는 제10항에 있어서, 상기 도체 패턴은 상기 구멍을 횡절단하는 크로스 오버부를 갖는 것을 특징으로 하는 반도체 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP93-82207 | 1993-04-08 | ||
JP08220793A JP3269171B2 (ja) | 1993-04-08 | 1993-04-08 | 半導体装置およびそれを有した時計 |
PCT/JP1994/000551 WO1994024698A1 (en) | 1993-04-08 | 1994-04-04 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
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KR950701769A true KR950701769A (ko) | 1995-04-28 |
KR100296834B1 KR100296834B1 (ko) | 2001-10-24 |
Family
ID=13767983
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940704091A KR100296834B1 (ko) | 1993-04-08 | 1994-04-04 | 반도체장치 |
Country Status (9)
Country | Link |
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US (1) | US5563445A (ko) |
EP (1) | EP0645806B1 (ko) |
JP (1) | JP3269171B2 (ko) |
KR (1) | KR100296834B1 (ko) |
CN (1) | CN1047470C (ko) |
DE (1) | DE69433543T2 (ko) |
HK (1) | HK1014612A1 (ko) |
TW (1) | TW301793B (ko) |
WO (1) | WO1994024698A1 (ko) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
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US5834339A (en) | 1996-03-07 | 1998-11-10 | Tessera, Inc. | Methods for providing void-free layers for semiconductor assemblies |
US6232152B1 (en) | 1994-05-19 | 2001-05-15 | Tessera, Inc. | Method of manufacturing a plurality of semiconductor packages and the resulting semiconductor package structures |
US6359335B1 (en) | 1994-05-19 | 2002-03-19 | Tessera, Inc. | Method of manufacturing a plurality of semiconductor packages and the resulting semiconductor package structures |
US5706174A (en) * | 1994-07-07 | 1998-01-06 | Tessera, Inc. | Compliant microelectrionic mounting device |
US6870272B2 (en) * | 1994-09-20 | 2005-03-22 | Tessera, Inc. | Methods of making microelectronic assemblies including compliant interfaces |
US5915170A (en) * | 1994-09-20 | 1999-06-22 | Tessera, Inc. | Multiple part compliant interface for packaging of a semiconductor chip and method therefor |
US5659952A (en) | 1994-09-20 | 1997-08-26 | Tessera, Inc. | Method of fabricating compliant interface for semiconductor chip |
US6169328B1 (en) | 1994-09-20 | 2001-01-02 | Tessera, Inc | Semiconductor chip assembly |
US6046076A (en) * | 1994-12-29 | 2000-04-04 | Tessera, Inc. | Vacuum dispense method for dispensing an encapsulant and machine therefor |
JP3643640B2 (ja) * | 1995-06-05 | 2005-04-27 | 株式会社東芝 | 表示装置及びこれに使用されるicチップ |
JP3270807B2 (ja) * | 1995-06-29 | 2002-04-02 | シャープ株式会社 | テープキャリアパッケージ |
US6284563B1 (en) * | 1995-10-31 | 2001-09-04 | Tessera, Inc. | Method of making compliant microelectronic assemblies |
US6211572B1 (en) | 1995-10-31 | 2001-04-03 | Tessera, Inc. | Semiconductor chip package with fan-in leads |
US6686015B2 (en) | 1996-12-13 | 2004-02-03 | Tessera, Inc. | Transferable resilient element for packaging of a semiconductor chip and method therefor |
JPH11260863A (ja) * | 1998-03-09 | 1999-09-24 | Sumitomo Electric Ind Ltd | 半導体装置用接続端子とその製造方法 |
FR2778475B1 (fr) * | 1998-05-11 | 2001-11-23 | Schlumberger Systems & Service | Carte a memoire du type sans contact, et procede de fabrication d'une telle carte |
KR20000012074A (ko) * | 1998-07-31 | 2000-02-25 | 야스카와 히데아키 | 반도체 장치 및 그 제조 방법, 반도체 장치의 제조 장치, 회로기판 및 전자 기기 |
JP3919972B2 (ja) | 1998-07-31 | 2007-05-30 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US6214640B1 (en) | 1999-02-10 | 2001-04-10 | Tessera, Inc. | Method of manufacturing a plurality of semiconductor packages |
US6146984A (en) * | 1999-10-08 | 2000-11-14 | Agilent Technologies Inc. | Method and structure for uniform height solder bumps on a semiconductor wafer |
US6096649A (en) * | 1999-10-25 | 2000-08-01 | Taiwan Semiconductor Manufacturing Company | Top metal and passivation procedures for copper damascene structures |
US6833557B1 (en) * | 2000-06-27 | 2004-12-21 | Agere Systems Inc. | Integrated circuit and a method of manufacturing an integrated circuit |
JP3490987B2 (ja) * | 2001-07-19 | 2004-01-26 | 沖電気工業株式会社 | 半導体パッケージおよびその製造方法 |
JP4099673B2 (ja) * | 2004-12-21 | 2008-06-11 | セイコーエプソン株式会社 | 半導体装置 |
KR101267651B1 (ko) * | 2005-02-25 | 2013-05-23 | 테세라, 인코포레이티드 | 유연성을 갖는 마이크로 전자회로 조립체 |
TWI310983B (en) * | 2006-10-24 | 2009-06-11 | Au Optronics Corp | Integrated circuit structure, display module, and inspection method thereof |
US7749886B2 (en) | 2006-12-20 | 2010-07-06 | Tessera, Inc. | Microelectronic assemblies having compliancy and methods therefor |
US8045333B2 (en) * | 2008-01-14 | 2011-10-25 | Rosemount Inc. | Intrinsically safe compliant circuit element spacing |
TWI429000B (zh) * | 2010-07-08 | 2014-03-01 | Novatek Microelectronics Corp | 晶片線路扇出方法及薄膜晶片裝置 |
US9691686B2 (en) | 2014-05-28 | 2017-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact pad for semiconductor device |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3871015A (en) * | 1969-08-14 | 1975-03-11 | Ibm | Flip chip module with non-uniform connector joints |
JPS53123074A (en) * | 1977-04-01 | 1978-10-27 | Nec Corp | Semiconductor device |
JPS601968A (ja) * | 1983-06-17 | 1985-01-08 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JPS6031244A (ja) * | 1983-08-01 | 1985-02-18 | Oki Electric Ind Co Ltd | 半導体装置 |
JPS6286737A (ja) * | 1985-10-11 | 1987-04-21 | Seiko Epson Corp | フエイスダウンボンデイング用基板 |
JPS6395639A (ja) * | 1986-10-09 | 1988-04-26 | Mitsubishi Electric Corp | テ−プキヤリア |
JP2623578B2 (ja) * | 1987-07-14 | 1997-06-25 | 日本電気株式会社 | 半導体集積回路装置 |
JPH01319957A (ja) * | 1988-06-21 | 1989-12-26 | Nec Corp | 集積回路 |
JPH03126237A (ja) * | 1989-10-12 | 1991-05-29 | Sumitomo Bakelite Co Ltd | 半導体装置の製造方法 |
JPH0574852A (ja) * | 1991-09-17 | 1993-03-26 | Nec Corp | 半導体装置 |
US5186383A (en) * | 1991-10-02 | 1993-02-16 | Motorola, Inc. | Method for forming solder bump interconnections to a solder-plated circuit trace |
US5198963A (en) * | 1991-11-21 | 1993-03-30 | Motorola, Inc. | Multiple integrated circuit module which simplifies handling and testing |
US5400950A (en) * | 1994-02-22 | 1995-03-28 | Delco Electronics Corporation | Method for controlling solder bump height for flip chip integrated circuit devices |
-
1993
- 1993-04-08 JP JP08220793A patent/JP3269171B2/ja not_active Expired - Lifetime
-
1994
- 1994-04-02 TW TW083102942A patent/TW301793B/zh not_active IP Right Cessation
- 1994-04-04 KR KR1019940704091A patent/KR100296834B1/ko not_active IP Right Cessation
- 1994-04-04 WO PCT/JP1994/000551 patent/WO1994024698A1/ja active IP Right Grant
- 1994-04-04 DE DE69433543T patent/DE69433543T2/de not_active Expired - Lifetime
- 1994-04-04 CN CN94190177A patent/CN1047470C/zh not_active Expired - Lifetime
- 1994-04-04 US US08/351,383 patent/US5563445A/en not_active Expired - Lifetime
- 1994-04-04 EP EP94910595A patent/EP0645806B1/en not_active Expired - Lifetime
-
1998
- 1998-12-28 HK HK98115925A patent/HK1014612A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0645806B1 (en) | 2004-02-11 |
CN1047470C (zh) | 1999-12-15 |
TW301793B (ko) | 1997-04-01 |
KR100296834B1 (ko) | 2001-10-24 |
JP3269171B2 (ja) | 2002-03-25 |
JPH06295939A (ja) | 1994-10-21 |
DE69433543D1 (de) | 2004-03-18 |
US5563445A (en) | 1996-10-08 |
HK1014612A1 (en) | 1999-09-30 |
DE69433543T2 (de) | 2004-12-23 |
WO1994024698A1 (en) | 1994-10-27 |
EP0645806A4 (en) | 1995-10-11 |
EP0645806A1 (en) | 1995-03-29 |
CN1104415A (zh) | 1995-06-28 |
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