KR950701769A - 반도체 장치(Semiconductor device) - Google Patents

반도체 장치(Semiconductor device)

Info

Publication number
KR950701769A
KR950701769A KR1019940704091A KR19940704091A KR950701769A KR 950701769 A KR950701769 A KR 950701769A KR 1019940704091 A KR1019940704091 A KR 1019940704091A KR 19940704091 A KR19940704091 A KR 19940704091A KR 950701769 A KR950701769 A KR 950701769A
Authority
KR
South Korea
Prior art keywords
semiconductor chip
circuit board
semiconductor device
overlapping
hole
Prior art date
Application number
KR1019940704091A
Other languages
English (en)
Other versions
KR100296834B1 (ko
Inventor
요시다까 이이지마
시게아끼 세끼
Original Assignee
야스가와 히데아끼
세이꼬 엡슨 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 야스가와 히데아끼, 세이꼬 엡슨 가부시끼가이샤 filed Critical 야스가와 히데아끼
Publication of KR950701769A publication Critical patent/KR950701769A/ko
Application granted granted Critical
Publication of KR100296834B1 publication Critical patent/KR100296834B1/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49572Lead-frames or other flat leads consisting of thin flexible metallic tape with or without a film carrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

절연성의 가요성 기재(21)를 구비하는 회로기판(2)에 대해서는 그 디바이스 홀(23)에 반도체 칩(3)이 배치되어 있다.
반도체 칩(3)의 범프(31)는 도체 패턴(22)중에 디바이스 홀(23)내로 돌출하는 리드부분(221)에 싱글 포인트 본딩법에 의해 접합되어 있다. 회로 기판(2)에는 디바이스 홀(23)의 네모서리부분에 반도체 칩(3)과 겹쳐 합쳐지는 기재(21)의 중첩부(211)를 가지는 동시에 디바이스 홀(23)을 4개의 구멍(231 내지 234)으로 분할하는 중첩부(212)도 가진다. 이들 중첩부(211,212)와 겹쳐지는 반도체 칩(2)의 면상에는 도체 패턴(22)과 접합되지 않고 회로기판(2)과 반도체 칩(3) 사이에 개재하여 거기에서 소정의 간극을 확보하는 더미 범프(32)를 갖는다. 또한, 중첩부(212)에는 구벙(231 내지 234)에서 몰드재를 주입한 때에 공기를 빼기 위한 관통 구멍(230)이 형성되어 있다.

Description

반도체 장치(Semiconductor device)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 따른 반도체 장치의 구성을 도시하는 평면도,
제2A도는 제1도의 I-Ⅱ선을 따라 취한 종단면도,
제2A도는 제1도의 I-Ⅲ선을 따라 취한 종단면도,
제3A도는 본 발명의 제1실시예에 따른 반도체 장치의 구조를 본딩전의 상태에서 모식적으로 도시하는 종단면도,
제3B도는 본 발명의 제1실시예에 다른 반도체 장치의 구조를 본딩후의 상태에서 모식적으로 도시하는 종단면도.

Claims (11)

  1. 절연성의 기재에 도체 패턴이 형성된 회로 기판과, 이 회로 기판의 디바이스 홀에 배치된 반도체 칩을 가지며, 상기 도체 패턴중에서 상기 디바이스 홀내로 돌출하는 리드부분과 상기 반도체 칩의 범프가 접합되어 있는 반도체 장치에 있어서, 상기 회로기판은 상기 반도체 칩과 겹쳐 합쳐지는 중첩부를 가지고, 이 중첩부및 그것과 겹쳐지는 상기 반도체 칩면상의 적어도 한쪽측에는 상기 리드부분과 상기 범프의 접합 공정 전후에 두께가 변화하지 않는 스페이서부가 형성되고, 이 스페이서부가 상기 회로 기판과 상기 반도체 칩과의 사이에 개재하여 거기에 소정의 간극을 확보할 수 있는 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 상기 스페이서부는 상기 중첩부가 겹쳐지는 상기 반도체 칩의 면상에서 상기 도체 패턴과 접합되지 않고, 상기 회로기판과 상기 반도체 칩과의 사이에 개재하여 거기에서 소정의 간극을 확보하는 더미 범프인 것을 특징으로 하는 반도체 장치.
  3. 제2항에 있어서, 상기 중첩부에는 상기 도체 패턴이 상기 더미 범프에 겹쳐지고 있는 것을 특징으로 하는 반도체 장치.
  4. 제1항에 있어서, 상기 스페이서부는 상기 중첩부측에서 상기 접합용 전극과 접합되지 않고, 상기 회로기판과 상기 반도체 칩과의 사이에 개재하여 거기에서 소정의 간극을 확보하는 상기 도체 패턴의 돌기인 것을 특징으로 하는 반도체 장치.
  5. 제4항에 있어서, 상기 반도체 칩은 상기 접합용 전극으로서의 범프를 가지고, 상기 돌기와 겹쳐지는 위치에는 그것과 접합하지 않는 더미 범프를 가지는 것을 특징으로 하는 반도체 장치.
  6. 제4항에 있어서, 상기 반도체 칩은 상기 접합용 전극으로서의 패드를 가지고, 상기 돌기와 겹쳐지는 위치에는 그것과 접합하지 않는 더미 패드를 가지는 것을 특징으로 하는 반도체 장치.
  7. 제1항 내지 제6항중 어느 한 항에 있어서, 상기 디바이스 홀은 대략 사각형의 윤곽을 가지고 그 네모서리에 상기 중첩부가 있는 것을 특징으로 하는 반도체 장치.
  8. 제7항에 있어서, 상기 중첩부는 상기 디바이스 홀의 각 변부분에도 있는 것을 특징으로 하는 반도체 장치.
  9. 제1항 내지 제8항중 어느 한 항에 있어서, 상기 중첩부는 상기 디바이스 홀 내측에 까지 형성되어 상기 디바이스 홀을 복수의 구멍으로 분할하고 있는 것을 특징으로 하는 반도체 장치.
  10. 제9항에 있어서, 상기 중첩부는 상기 디바이스 홀의 대략 중심 위치를 관통하고, 상기 디바이스 홀을 복수의 구멍으로 분할해두며, 그 중심 위치에 대응하는 부분에는 상기 중첩부에 관통 구멍이 형성되어 있는 것을 특징으로 하는 반도체 장치.
  11. 제9항 또는 제10항에 있어서, 상기 도체 패턴은 상기 구멍을 횡절단하는 크로스 오버부를 갖는 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940704091A 1993-04-08 1994-04-04 반도체장치 KR100296834B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP93-82207 1993-04-08
JP08220793A JP3269171B2 (ja) 1993-04-08 1993-04-08 半導体装置およびそれを有した時計
PCT/JP1994/000551 WO1994024698A1 (en) 1993-04-08 1994-04-04 Semiconductor device

Publications (2)

Publication Number Publication Date
KR950701769A true KR950701769A (ko) 1995-04-28
KR100296834B1 KR100296834B1 (ko) 2001-10-24

Family

ID=13767983

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940704091A KR100296834B1 (ko) 1993-04-08 1994-04-04 반도체장치

Country Status (9)

Country Link
US (1) US5563445A (ko)
EP (1) EP0645806B1 (ko)
JP (1) JP3269171B2 (ko)
KR (1) KR100296834B1 (ko)
CN (1) CN1047470C (ko)
DE (1) DE69433543T2 (ko)
HK (1) HK1014612A1 (ko)
TW (1) TW301793B (ko)
WO (1) WO1994024698A1 (ko)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5834339A (en) 1996-03-07 1998-11-10 Tessera, Inc. Methods for providing void-free layers for semiconductor assemblies
US6232152B1 (en) 1994-05-19 2001-05-15 Tessera, Inc. Method of manufacturing a plurality of semiconductor packages and the resulting semiconductor package structures
US6359335B1 (en) 1994-05-19 2002-03-19 Tessera, Inc. Method of manufacturing a plurality of semiconductor packages and the resulting semiconductor package structures
US5706174A (en) * 1994-07-07 1998-01-06 Tessera, Inc. Compliant microelectrionic mounting device
US6870272B2 (en) * 1994-09-20 2005-03-22 Tessera, Inc. Methods of making microelectronic assemblies including compliant interfaces
US5915170A (en) * 1994-09-20 1999-06-22 Tessera, Inc. Multiple part compliant interface for packaging of a semiconductor chip and method therefor
US5659952A (en) 1994-09-20 1997-08-26 Tessera, Inc. Method of fabricating compliant interface for semiconductor chip
US6169328B1 (en) 1994-09-20 2001-01-02 Tessera, Inc Semiconductor chip assembly
US6046076A (en) * 1994-12-29 2000-04-04 Tessera, Inc. Vacuum dispense method for dispensing an encapsulant and machine therefor
JP3643640B2 (ja) * 1995-06-05 2005-04-27 株式会社東芝 表示装置及びこれに使用されるicチップ
JP3270807B2 (ja) * 1995-06-29 2002-04-02 シャープ株式会社 テープキャリアパッケージ
US6284563B1 (en) * 1995-10-31 2001-09-04 Tessera, Inc. Method of making compliant microelectronic assemblies
US6211572B1 (en) 1995-10-31 2001-04-03 Tessera, Inc. Semiconductor chip package with fan-in leads
US6686015B2 (en) 1996-12-13 2004-02-03 Tessera, Inc. Transferable resilient element for packaging of a semiconductor chip and method therefor
JPH11260863A (ja) * 1998-03-09 1999-09-24 Sumitomo Electric Ind Ltd 半導体装置用接続端子とその製造方法
FR2778475B1 (fr) * 1998-05-11 2001-11-23 Schlumberger Systems & Service Carte a memoire du type sans contact, et procede de fabrication d'une telle carte
KR20000012074A (ko) * 1998-07-31 2000-02-25 야스카와 히데아키 반도체 장치 및 그 제조 방법, 반도체 장치의 제조 장치, 회로기판 및 전자 기기
JP3919972B2 (ja) 1998-07-31 2007-05-30 セイコーエプソン株式会社 半導体装置の製造方法
US6214640B1 (en) 1999-02-10 2001-04-10 Tessera, Inc. Method of manufacturing a plurality of semiconductor packages
US6146984A (en) * 1999-10-08 2000-11-14 Agilent Technologies Inc. Method and structure for uniform height solder bumps on a semiconductor wafer
US6096649A (en) * 1999-10-25 2000-08-01 Taiwan Semiconductor Manufacturing Company Top metal and passivation procedures for copper damascene structures
US6833557B1 (en) * 2000-06-27 2004-12-21 Agere Systems Inc. Integrated circuit and a method of manufacturing an integrated circuit
JP3490987B2 (ja) * 2001-07-19 2004-01-26 沖電気工業株式会社 半導体パッケージおよびその製造方法
JP4099673B2 (ja) * 2004-12-21 2008-06-11 セイコーエプソン株式会社 半導体装置
KR101267651B1 (ko) * 2005-02-25 2013-05-23 테세라, 인코포레이티드 유연성을 갖는 마이크로 전자회로 조립체
TWI310983B (en) * 2006-10-24 2009-06-11 Au Optronics Corp Integrated circuit structure, display module, and inspection method thereof
US7749886B2 (en) 2006-12-20 2010-07-06 Tessera, Inc. Microelectronic assemblies having compliancy and methods therefor
US8045333B2 (en) * 2008-01-14 2011-10-25 Rosemount Inc. Intrinsically safe compliant circuit element spacing
TWI429000B (zh) * 2010-07-08 2014-03-01 Novatek Microelectronics Corp 晶片線路扇出方法及薄膜晶片裝置
US9691686B2 (en) 2014-05-28 2017-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Contact pad for semiconductor device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3871015A (en) * 1969-08-14 1975-03-11 Ibm Flip chip module with non-uniform connector joints
JPS53123074A (en) * 1977-04-01 1978-10-27 Nec Corp Semiconductor device
JPS601968A (ja) * 1983-06-17 1985-01-08 Matsushita Electric Ind Co Ltd 半導体装置
JPS6031244A (ja) * 1983-08-01 1985-02-18 Oki Electric Ind Co Ltd 半導体装置
JPS6286737A (ja) * 1985-10-11 1987-04-21 Seiko Epson Corp フエイスダウンボンデイング用基板
JPS6395639A (ja) * 1986-10-09 1988-04-26 Mitsubishi Electric Corp テ−プキヤリア
JP2623578B2 (ja) * 1987-07-14 1997-06-25 日本電気株式会社 半導体集積回路装置
JPH01319957A (ja) * 1988-06-21 1989-12-26 Nec Corp 集積回路
JPH03126237A (ja) * 1989-10-12 1991-05-29 Sumitomo Bakelite Co Ltd 半導体装置の製造方法
JPH0574852A (ja) * 1991-09-17 1993-03-26 Nec Corp 半導体装置
US5186383A (en) * 1991-10-02 1993-02-16 Motorola, Inc. Method for forming solder bump interconnections to a solder-plated circuit trace
US5198963A (en) * 1991-11-21 1993-03-30 Motorola, Inc. Multiple integrated circuit module which simplifies handling and testing
US5400950A (en) * 1994-02-22 1995-03-28 Delco Electronics Corporation Method for controlling solder bump height for flip chip integrated circuit devices

Also Published As

Publication number Publication date
EP0645806B1 (en) 2004-02-11
CN1047470C (zh) 1999-12-15
TW301793B (ko) 1997-04-01
KR100296834B1 (ko) 2001-10-24
JP3269171B2 (ja) 2002-03-25
JPH06295939A (ja) 1994-10-21
DE69433543D1 (de) 2004-03-18
US5563445A (en) 1996-10-08
HK1014612A1 (en) 1999-09-30
DE69433543T2 (de) 2004-12-23
WO1994024698A1 (en) 1994-10-27
EP0645806A4 (en) 1995-10-11
EP0645806A1 (en) 1995-03-29
CN1104415A (zh) 1995-06-28

Similar Documents

Publication Publication Date Title
KR950701769A (ko) 반도체 장치(Semiconductor device)
KR900005576A (ko) 반도체 집적회로 장치
KR930017153A (ko) 반도체 장치
KR940027109A (ko) 반도체 장치 및 그 제조 방법
KR920010853A (ko) 수지봉지형 반도체장치
KR950007059A (ko) 집적 회로
KR950004467A (ko) 반도체장치 및 그 제조방법
KR890001186A (ko) 반도체 집적회로 장치 및 그 제조방법
KR830004676A (ko) 회로 패키지들의 제조방법
KR960019690A (ko) 반도체장치의 제조방법
KR970003877A (ko) 테이프 캐리어 패키지
KR970063688A (ko) 패턴닝된 리드프레임을 이용한 멀티 칩 패키지
KR930024140A (ko) 반도체장치 및 그 제조방법
KR910019209A (ko) 반도체 집적회로 장치
KR970060467A (ko) 반도체장치
KR920001697A (ko) 수직형 반도체 상호 접촉 방법 및 그 구조
KR920022431A (ko) 반도체 장치용 패키지
JP2001044137A (ja) 電子装置及びその製造方法
KR950012613A (ko) 반도체 장치 및 그 제조 방법
KR960019683A (ko) 반도체 장치
KR920017219A (ko) 반도체장치와 반도체장치의 제조방법 및 테이프 캐리어
JP2815984B2 (ja) 半導体装置
JP2001203302A (ja) 半導体装置の接合構造
JPH01165133A (ja) 半導体装置
JPH07106470A (ja) 半導体装置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20120423

Year of fee payment: 12

FPAY Annual fee payment

Payment date: 20130502

Year of fee payment: 13

EXPY Expiration of term