KR950034859A - 반도체 디바이스의 제조방법 - Google Patents

반도체 디바이스의 제조방법 Download PDF

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KR950034859A
KR950034859A KR1019950013523A KR19950013523A KR950034859A KR 950034859 A KR950034859 A KR 950034859A KR 1019950013523 A KR1019950013523 A KR 1019950013523A KR 19950013523 A KR19950013523 A KR 19950013523A KR 950034859 A KR950034859 A KR 950034859A
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sealing resin
resin
semiconductor device
circuit board
manufacturing
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KR1019950013523A
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KR0180931B1 (ko
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마사히로 고니시
마사꼬 야베
도시히로 히다
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쯔지 하루오
샤프 가부시끼가이샤
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Abstract

본 발명의 반도체 디바이스의 제조방법은, 상방으로 향해 개구하는 다수의 캐비티가 형성되어 있는 멀티캐비티 회로기판의 각 캐비티에 기능소자를 배치하는 공정; 가열에 의해 용융하며 또한 가열을 계속하여 경화하는 열경화성수지 또는 열가소성수지를 밀봉용수지로서 함유하는, 소정 두께의 밀봉용수지를 상기 멀티 캐비티 회로기판의 모든 캐비티를 커버하도록 상기 멀티 캐비티 회로기판상에 중합시키는 공정; 상기 멀티 캐비티 회로기판상의 밀봉용수지를 용융하고 이 용융된 수지를 각 캐비티에 충전하도록 가열 및 가압하는 공정; 및 상기 캐비티의 각각에 충전된 용융수지를 경화시키는 공정을 포함한다.

Description

반도체 디바이스의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 반도체 디바이스의 제조방법에 따라 제조될 수 있는 초소형 반사판부착 발광 디바이스의 외관사시도, 제8A도는 본 발명의 다른 실시예에 있어서의 멀티 캐비티 회로기판의 캐비티의 종단면도; 제8B도는 그 횡단면도; 제8C도는 그 평면도, 제13A도는 제11A도~11C도에 보인 방법으로 제조되는 다 캐비티 회로기판의 사시도; 제13B도는 제13A도에 보인 멀티 캐비티 회로기판을 사용하여 제조되는 초소형 반사판부착 발광 디바이스의 사시도.

Claims (20)

  1. 상방으로 향해 개구하는 다수의 캐비티가 형성되어 있는 멀티 캐비티 회로기판의 각 캐비티에 기능소자를 배치하는 공정; 가열에 의해 용융하며 또한 가열을 계속하여 경화하는 열경화성수지 또는 열가소성수지를 밀봉용수지로서 함유하는, 소정 두께의 밀봉용수지를 상기 멀티 캐비티 회로기판의 모든 캐비티를 커버하도록 상기 멀티 캐비티 회로기판상에 중합시키는 공정; 상기 멀티 캐비티 회로기판상의 밀봉용수지를 용융하고 이 용융된 수지를 각 캐비티에 충전하도록 가열 및 가압하는 공정; 및 상기 캐비티의 각각에 충전된 용융수지를 경화시키는 공정을 포함하는 반도체 디바이스의 제조방법.
  2. 제1항에 있어서, 상기 밀봉용수지는 진공하에 상기 멀티 캐비티 회로기판에 압접되어 가열 및 가압되는 반도체 디바이스의 제조방법.
  3. 제2항에 있어서, 상기 밀봉용수지는 진공하에 상기 멀티 캐비티 회로기판에 함께 열프레스되어 가열 및 가압되는 반도체 디바이스의 제조방법.
  4. 제4항에 있어서, 상기 밀봉용수지는 매트면을 갖는 표면성형용 박리시트에 의해 압전된 상태로 가열 및 가압되는 반도체 디바이스의 제조방법.
  5. 제4항에 있어서, 상기 캐비티에 관통공이 제공되어 있는 반도체 디바이스의 제조방법.
  6. 제1항에 있어서, 상기 밀봉용수지시트의 상기 캐비티에 대향하는 부분에 관통공이 제공되어 있는 반도체 디바이스의 제조방법.
  7. 제1항에 있어서, 탄성율이 다른 복수매의 상기 밀봉용수지시트가 서로 중합되어 있는 반도체 디바이스의 제조방법.
  8. 제1항에 있어서, 상기 기능소자는 광학소자이며, 상기 밀봉용수지는 경화후에 광투과성을 갖는 반도체 디바이스의 제조방법.
  9. 제8항에 있어서, 광투과성을 갖는 렌즈성형용 수지시트가 상기 밀봉용수지시트상에 중첩되고, 상기 밀봉용수지시트를 용융하고, 캐비티에 충전, 및 경화할때 상기 렌즈성형용 수지가 소망의 렌즈형상으로 성형되어 있는 반도체 디바이스의 제조방법.
  10. 제1항에 있어서, 상기 밀봉용수지는 열경화성의 변성폴리올레핀인 반도체 디바이스의 제조방법.
  11. 제1항에 있어서, 상기 밀봉용수지는 경화가능한 불포화부분을 갖는 변성 페녹시수지인 반도체 디바이스의 제조방법.
  12. 제1항에 있어서, 상기 밀봉용수지는 수평균분자량이 5000이상의 고분자량 불포화폴리에스테르 또는 그 변성물인 반도체 디바이스의 제조방법.
  13. 상방으로 향해 개구하는 다수의 캐비티가 형성되어 있는 멀티 캐비티 회로기판의 각 캐비티에 기능소자를 배치하는 공정; 가열에 의해 용융하며 또한 가열을 계속하여 경화하는 열가소성수지 및 열경화성수지중 하나를 밀봉용수지로서 함유하는, 미분상의 수지분말을 상기 캐비티의 각각에 충전하는 공정; 상기 각 캐비티에 충전된 수지분말을 가열하여 용융하는 공정; 상기 각 캐비티에 충전된 용융수지를 경화시키는 공정을 포함하는 반도체 디바이스의 제조방법.
  14. 제13항에 있어서, 상기 밀봉용수지는 열경화성의 변성폴리올레핀인 반도체 디바이스의 제조방법.
  15. 제13항에 있어서, 상기 밀봉용수지는 경화가능한 불포화부분을 갖는 페녹시수지인 반도체 디바이스의 제조방법.
  16. 제13항에 있어서, 상기 밀봉용수지는 수평균분자량이 5000이상의 고분자량 불포화폴리에스테르 또는 그 변성물인 반도체 디바이스의 제조방법.
  17. 평면회로기판의 표면에 복수의 기능소자를 배치하는 공정; 가열에 의해 용융하며 또한 가열을 계속하여 경화하는 열가소성수지 및 열경화성수지중 하나를 밀봉용수지로서 함유하고, 상기 평면회로기판상의 각 기능소자를 커버하는 오목부가 형성되어 있는 소정 두께의 밀봉용수지시트를 상기 평면회로기판상에 중합시키는 공정; 및 상기 평면회로기판상에 중합된 밀봉용수지시트를 소망의 형상으로 성형하고 상기 기능소자의 각각을 소망의 형상으로 밀봉하는 공정을 포함하는 반도체 디바이스의 제조방법.
  18. 제17항에 있어서, 상기 기능소자는 광학소자이며, 상기 밀봉용수지는 경화후에 광투과성을 갖는 반도체 디바이스의 제조방법.
  19. 제18항에 있어서, 상기 밀봉용수지시트는 소망의 렌즈형상으로 성형되는 반도체 디바이스의 제조방법.
  20. 평면회로기판 표면에 복수의 발광 다이오드를 배치하는 공정; 상기 발광다이오드의 각각을 수용할 수 있는 개구부가 형성되고, 반사기능을 갖는 반사판을 상기 각 개구부에 각 발광다이오드가 수용되도록 상기 평면회로기판상에 중합하는 공정; 가열에 의해 용융하며 또한 가열을 계속하여 경화하는 열가소성 및 열경화성수지중의 하나를 밀봉용수지로서 함유하고, 소정 두께의 밀봉용수지시트를 상기 반사판상에 중합시키는 공정; 상기 반사판상의 밀봉용수지시트를 용융하고, 상기 용융된 수지를 반사판의 개구부의 각각에 충전하도록 가열 및 가압하는 공정; 상기 용융수지로 반사판표면 전체를 커버하는 공정; 및 상기 용융수지를 경화시키는 공정을 포함하는 반도체 디바이스의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950013523A 1994-05-24 1995-05-24 반도체 디바이스의 제조방법 KR0180931B1 (ko)

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Families Citing this family (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5851449A (en) * 1995-09-27 1998-12-22 Kabushiki Kaisha Toshiba Method for manufacturing a surface-mounted type optical semiconductor device
US6274890B1 (en) 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
WO1998041071A1 (en) * 1997-03-11 1998-09-17 Xemod, Inc. Hybrid module assembling method and apparatus
JP3391282B2 (ja) * 1998-07-02 2003-03-31 株式会社村田製作所 電子部品の製造方法
JP2001168400A (ja) * 1999-12-09 2001-06-22 Rohm Co Ltd ケース付チップ型発光装置およびその製造方法
US6856006B2 (en) * 2002-03-28 2005-02-15 Siliconix Taiwan Ltd Encapsulation method and leadframe for leadless semiconductor packages
KR20020079087A (ko) * 2001-04-13 2002-10-19 주식회사한영전자 표시등의 발광다이오드 보호 구조
BR0315942A (pt) * 2002-11-27 2005-10-04 Dmi Biosciences Inc Tratamento de doenças e condições mediadas pelo aumento de fosforilação
KR101148332B1 (ko) 2003-04-30 2012-05-25 크리, 인코포레이티드 콤팩트 광학 특성을 지닌 높은 전력의 발광 소자 패키지
TWI263403B (en) 2004-01-22 2006-10-01 Murata Manufacturing Co Electronic component manufacturing method
JP2005259847A (ja) * 2004-03-10 2005-09-22 Nitto Denko Corp 光半導体装置の製造方法
JP2005294733A (ja) * 2004-04-05 2005-10-20 Nitto Denko Corp 光半導体素子封止用シートおよび該シートを用いた光半導体装置の製造方法
JP5004410B2 (ja) * 2004-04-26 2012-08-22 Ｔｏｗａ株式会社 光素子の樹脂封止成形方法および樹脂封止成形装置
DE102004021927B4 (de) * 2004-05-04 2008-07-03 Semikron Elektronik Gmbh & Co. Kg Verfahren zur inneren elektrischen Isolation eines Substrats für ein Leistungshalbleitermodul
US20080297906A1 (en) * 2004-06-18 2008-12-04 Toray Industries, Inc. Anisotropic Diffusion Film
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP4031784B2 (ja) * 2004-07-28 2008-01-09 シャープ株式会社 発光モジュールおよびその製造方法
JP5128047B2 (ja) * 2004-10-07 2013-01-23 Ｔｏｗａ株式会社 光デバイス及び光デバイスの生産方法
JP4627177B2 (ja) * 2004-11-10 2011-02-09 スタンレー電気株式会社 Ｌｅｄの製造方法
JP2006140362A (ja) * 2004-11-15 2006-06-01 Nitto Denko Corp 光半導体素子封止用シートおよび該シートを用いた光半導体装置の製造方法
JP2007079526A (ja) * 2004-11-26 2007-03-29 Hasegawa Kagaku Kogyo Kk Ｉｃタグ及びその製造方法
JP2006173536A (ja) * 2004-12-20 2006-06-29 Nec Lighting Ltd 表面実装型ｌｅｄ及びその製造方法
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
EP1693904B1 (en) 2005-02-18 2020-03-25 Nichia Corporation Light emitting device provided with lens for controlling light distribution characteristic
JP4889076B2 (ja) * 2005-04-14 2012-02-29 アサ電子工業株式会社 インジケータランプ
ATE546836T1 (de) * 2005-04-21 2012-03-15 Fiat Ricerche Anwendung einer transparenten leuchtdiodenanzeigevorrichtung in einem kraftfahrzeug
DE102005036520A1 (de) * 2005-04-26 2006-11-09 Osram Opto Semiconductors Gmbh Optisches Bauteil, optoelektronisches Bauelement mit dem Bauteil und dessen Herstellung
TWI256737B (en) * 2005-05-19 2006-06-11 Pi-Fu Yang One-block light-emitting device and manufacturing method thereof
US7985357B2 (en) * 2005-07-12 2011-07-26 Towa Corporation Method of resin-sealing and molding an optical device
JP4818654B2 (ja) * 2005-07-25 2011-11-16 ソニーケミカル＆インフォメーションデバイス株式会社 発光素子の封止方法
US8007885B2 (en) * 2005-09-14 2011-08-30 Georgios Topoulos Light-emitting diode assembly housing comprising poly(cyclohexanedimethanol terephthalate) compositions
JP4969830B2 (ja) * 2005-10-26 2012-07-04 中島硝子工業株式会社 発光素子モジュールの製造方法
US7344952B2 (en) * 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
US20070096132A1 (en) * 2005-11-01 2007-05-03 Jiahn-Chang Wu Coaxial LED lighting board
US20080151562A1 (en) * 2005-11-02 2008-06-26 Hwa Su Fabrication structure for light emitting diode component
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
JP2007201354A (ja) * 2006-01-30 2007-08-09 Matsushita Electric Ind Co Ltd 発光モジュール
US7675145B2 (en) 2006-03-28 2010-03-09 Cree Hong Kong Limited Apparatus, system and method for use in mounting electronic elements
JP4954591B2 (ja) * 2006-04-13 2012-06-20 シャープ株式会社 発光装置およびその製造方法
EP1848042A1 (en) * 2006-04-21 2007-10-24 LEXEDIS Lighting GmbH LED package with submount
WO2007139894A2 (en) 2006-05-26 2007-12-06 Cree Led Lighting Solutions, Inc. Solid state light emitting device and method of making same
KR100789951B1 (ko) * 2006-06-09 2008-01-03 엘지전자 주식회사 발광 유닛 제작 장치 및 방법
JP2006310887A (ja) * 2006-07-25 2006-11-09 Nippon Leiz Co Ltd 光源装置の製造方法
JP2006287267A (ja) * 2006-07-25 2006-10-19 Nippon Leiz Co Ltd 光源装置の製造方法
EP2060155A2 (en) 2006-08-23 2009-05-20 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
DE102006048592A1 (de) * 2006-10-13 2008-04-17 Osram Opto Semiconductors Gmbh Optoelektronisches Modul und Verfahren zur Herstellung eines optoelektronischen Moduls
JP4858966B2 (ja) * 2006-11-02 2012-01-18 Ｔｏｗａ株式会社 電子部品の圧縮成形方法及び成形装置
CN101578711A (zh) * 2006-11-09 2009-11-11 跃进封装公司 Led反射性封装体
WO2008070607A1 (en) 2006-12-04 2008-06-12 Cree Led Lighting Solutions, Inc. Lighting assembly and lighting method
WO2008070604A1 (en) 2006-12-04 2008-06-12 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
JP2008159942A (ja) * 2006-12-25 2008-07-10 Matsushita Electric Works Ltd 物体検出センサ
US9711703B2 (en) 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
JP4903179B2 (ja) 2007-04-23 2012-03-28 サムソン エルイーディー カンパニーリミテッド． 発光装置及びその製造方法
JP5080881B2 (ja) * 2007-06-27 2012-11-21 ナミックス株式会社 発光ダイオードチップの封止体の製造方法
EP2171502B1 (en) 2007-07-17 2016-09-14 Cree, Inc. Optical elements with internal optical features and methods of fabricating same
US11114594B2 (en) 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
DE102008014122A1 (de) * 2007-11-29 2009-06-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
JP5064278B2 (ja) 2008-03-25 2012-10-31 日東電工株式会社 光半導体素子封止用樹脂シートおよび光半導体装置
JP5324114B2 (ja) * 2008-03-27 2013-10-23 リンテック株式会社 発光モジュール用シートの製造方法、発光モジュール用シート
JP5125748B2 (ja) * 2008-05-13 2013-01-23 豊田合成株式会社 発光装置の製造方法
US8461613B2 (en) * 2008-05-27 2013-06-11 Interlight Optotech Corporation Light emitting device
CN101577301B (zh) * 2008-09-05 2011-12-21 佛山市国星光电股份有限公司 白光led的封装方法及使用该方法制作的led器件
KR100993317B1 (ko) * 2008-08-26 2010-11-09 삼성전기주식회사 발광 다이오드 패키지의 렌즈 제조방법
JP5174630B2 (ja) * 2008-11-26 2013-04-03 Ｔｏｗａ株式会社 光学成形品の圧縮成形方法
US8368112B2 (en) 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
US8357998B2 (en) * 2009-02-09 2013-01-22 Advanced Semiconductor Engineering, Inc. Wirebonded semiconductor package
CN101852384B (zh) * 2009-03-31 2013-08-28 光宝科技股份有限公司 形成发光二极管的透镜结构的方法及其相关架构
US8212263B2 (en) * 2009-04-03 2012-07-03 Koninklijke Philips Electronics N.V. Backlight including semiconductior light emitting devices
JP5301339B2 (ja) * 2009-04-14 2013-09-25 スタンレー電気株式会社 半導体装置
JP5440096B2 (ja) * 2009-10-26 2014-03-12 日立化成株式会社 光半導体装置の製造方法、光半導体素子搭載用基板の製造方法及び光半導体装置
CN102148311B (zh) * 2010-02-09 2013-06-05 良盟塑胶股份有限公司 Led封装方法
WO2011109442A2 (en) * 2010-03-02 2011-09-09 Oliver Steven D Led packaging with integrated optics and methods of manufacturing the same
US8329482B2 (en) 2010-04-30 2012-12-11 Cree, Inc. White-emitting LED chips and method for making same
DE102010049333B4 (de) * 2010-10-22 2012-07-05 Jürgen Hackert Verfahren und Vorrichtung zur Herstellung einer bandförmigen Struktur zur Aufnahme von elektronischen Bauteilen
JP2012142364A (ja) * 2010-12-28 2012-07-26 Nitto Denko Corp 封止部材、封止方法、および、光半導体装置の製造方法
CN103460416B (zh) * 2011-02-10 2016-11-09 日亚化学工业株式会社 发光装置、发光装置的制造方法及封装阵列
JP5447407B2 (ja) * 2011-02-24 2014-03-19 日亜化学工業株式会社 発光装置
US9062198B2 (en) 2011-04-14 2015-06-23 Ticona Llc Reflectors for light-emitting diode assemblies containing a white pigment
US8480254B2 (en) 2011-04-14 2013-07-09 Ticona, Llc Molded reflective structures for light-emitting diodes
US9284448B2 (en) 2011-04-14 2016-03-15 Ticona Llc Molded reflectors for light-emitting diode assemblies
US9453119B2 (en) 2011-04-14 2016-09-27 Ticona Llc Polymer composition for producing articles with light reflective properties
CN103814448B (zh) * 2011-11-29 2015-07-01 夏普株式会社 发光器件的制造方法
JP5923183B2 (ja) 2011-12-30 2016-05-24 ティコナ・エルエルシー 発光デバイス用の反射板
US20130214418A1 (en) * 2012-01-12 2013-08-22 King Dragon International Inc. Semiconductor Device Package with Slanting Structures
US20130181227A1 (en) * 2012-01-12 2013-07-18 King Dragon International Inc. LED Package with Slanting Structure and Method of the Same
JP6362834B2 (ja) * 2012-07-17 2018-07-25 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 半導体装置の製造方法
US9178123B2 (en) * 2012-12-10 2015-11-03 LuxVue Technology Corporation Light emitting device reflective bank structure
US9159700B2 (en) 2012-12-10 2015-10-13 LuxVue Technology Corporation Active matrix emissive micro LED display
US9029880B2 (en) 2012-12-10 2015-05-12 LuxVue Technology Corporation Active matrix display panel with ground tie lines
WO2014099745A1 (en) 2012-12-18 2014-06-26 Ticona Llc Molded reflectors for light-emitting diode assemblies
TWI539872B (zh) * 2013-01-09 2016-06-21 聯京光電股份有限公司 基板、半導體結構以及其相關製造方法
CN105264283B (zh) * 2013-01-10 2018-06-12 莫列斯公司 Led组件
CN105121566A (zh) * 2013-03-15 2015-12-02 道康宁公司 包括沉积粉末形式的固体含有机硅的热熔融组合物和形成其封装件的用于制备光学组件的方法
KR102071463B1 (ko) 2013-04-08 2020-01-30 루미리즈 홀딩 비.브이. 형광체 변환 층에 높은 열 전도도 입자를 갖는 led 및 그 제조 방법
US9111464B2 (en) 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
US10147854B2 (en) 2014-05-10 2018-12-04 Sensor Electronic Technology, Inc. Packaging for ultraviolet optoelectronic device
US9548429B2 (en) * 2014-05-10 2017-01-17 Sensor Electronic Technology, Inc. Packaging for ultraviolet optoelectronic device
CN104091860B (zh) * 2014-07-01 2017-01-11 东莞市万丰纳米材料有限公司 Led封装光源及其生产工艺
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
JP2016046491A (ja) * 2014-08-26 2016-04-04 信越化学工業株式会社 光半導体装置の封止方法及び該封止方法によって製造された光半導体装置
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces
WO2017020018A1 (en) * 2015-07-30 2017-02-02 Selwyn Gary S Hyperbaric process for applying and curing an organic polymerizable treatment
CN105318200A (zh) * 2015-10-12 2016-02-10 深圳万城节能股份有限公司 发光单元的制造方法
JP2017183856A (ja) * 2016-03-29 2017-10-05 京セラ株式会社 水晶発振器
CN106252243A (zh) * 2016-09-09 2016-12-21 深圳连硕三悠自动化科技有限公司 一种用于球头型半导体元器件封装的装置及方法
CN106531865B (zh) * 2016-10-24 2019-06-21 东莞市国瓷新材料科技有限公司 一种紫外led封装用的围坝陶瓷基板制备方法
WO2019151826A1 (ko) * 2018-02-05 2019-08-08 엘지이노텍 주식회사 반도체 소자 패키지 및 이를 포함하는 발광장치
US11419221B2 (en) 2018-05-02 2022-08-16 Eleadtk Co., Ltd. Method of forming protective film on at least one electronic module
WO2020230715A1 (ja) * 2019-05-16 2020-11-19 住友化学株式会社 電子部品及びその製造方法
WO2020230716A1 (ja) * 2019-05-16 2020-11-19 住友化学株式会社 電子部品の製造方法および電子部品
JP6998362B2 (ja) * 2019-05-16 2022-01-18 住友化学株式会社 電子部品及びその製造方法
CN110491295B (zh) * 2019-08-26 2020-07-17 苹果公司 织物覆盖的电子设备中的显示器
JP6856787B1 (ja) * 2020-01-29 2021-04-14 住友化学株式会社 電子部品の製造方法
CN114046697B (zh) * 2021-08-02 2023-09-19 北京信息科技大学 炮弹船尾及炮弹船尾的装配方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4445952A (en) * 1981-11-03 1984-05-01 Trw Inc. Apparatus and method for filling holes in a circuit board
JPS58165333A (ja) * 1982-03-26 1983-09-30 Toshiba Corp 半導体装置の製造方法
JPS61163644A (ja) * 1985-01-16 1986-07-24 Oki Electric Ind Co Ltd 半導体装置の封止方法と封止部材
JPS6245138A (ja) * 1985-08-23 1987-02-27 Sony Corp 電子部品装置の製法
JPS63193814A (ja) * 1987-02-06 1988-08-11 Nec Corp トランスフアモ−ルド金型
DE4242842C2 (de) * 1992-02-14 1999-11-04 Sharp Kk Lichtemittierendes Bauelement zur Oberflächenmontage und Verfahren zu dessen Herstellung

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CN1119343A (zh) 1996-03-27
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US5635115A (en) 1997-06-03
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