KR930024166A - 캐패시터와 그 형성방법 - Google Patents

캐패시터와 그 형성방법 Download PDF

Info

Publication number
KR930024166A
KR930024166A KR1019930008267A KR930008267A KR930024166A KR 930024166 A KR930024166 A KR 930024166A KR 1019930008267 A KR1019930008267 A KR 1019930008267A KR 930008267 A KR930008267 A KR 930008267A KR 930024166 A KR930024166 A KR 930024166A
Authority
KR
South Korea
Prior art keywords
region
dielectric
high permeability
electrode
capacitor
Prior art date
Application number
KR1019930008267A
Other languages
English (en)
Other versions
KR100263102B1 (ko
Inventor
이. 죤슨 2세 로버트
Original Assignee
빈센트 비. 인그라시아
모토로라인 코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 빈센트 비. 인그라시아, 모토로라인 코포레이티드 filed Critical 빈센트 비. 인그라시아
Publication of KR930024166A publication Critical patent/KR930024166A/ko
Application granted granted Critical
Publication of KR100263102B1 publication Critical patent/KR100263102B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

메모리 셀(10)에 사용하기 위한 캐패시터로서, 트랜지스터는 기판(10)위에 형성된다. 트랜지스터는 제1전류 전극(16)과 제2전류 전극(18)을 구비하고 있다. 전류 전극(16, 18)은 채널 영역에 의해 분할된다. 게이트 전극(26)은 채널 영역위에 형성되고, 게이트 유전층(24)에 의해 채널 영역으로부터 물리적으로 분할된다. 플러그 영역(32)은 제1전류 전극(16)에 전기적으로 접속되고 그위에 형성된다. 환형 고 투자율 유전 영역(33)을 트랜지스터 위에 형성되고, 고 투자율 유전층(36)으로 형성된다. 제1캐패시터 전극은 전도영역(38″)을 경유하여 형성되고, 제2패캐시터 전극은 전도영역(38″)을 경유하여 형성된다. 메모리 셀(10)은 환형상 고투자율 유전 영역(33)의 여러 성질에 따라 비휘발성 메모리 셀 또는 DRAM 셀로서 형성된다.

Description

캐패시터와 그 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 내지 제3도는 본 발명에 따르는 캐패시터를 구비하는 메모리 셀을 형성하는 방법을 설명하는 단면도.

Claims (2)

  1. 기판(12)과; 내측벽(37) 및 외측벽(35)을 구비하고, 기판 위에 형성된 환형상 고 투자율 유전 영역(36)과; 환형상 고 투자율 유전 영역의 내측벽에 인접하여 형성된 제1캐패시터 전극(38″)과; 환형상 고 투자율 유전 영역의 외측벽에 인접하여 형성된 제2캐패시터 전극(38′)을 포함하는 것을 특징으로 하는 반도체 캐패시터(38′, 38″, 36).
  2. 제1항에 있어서, 트인구멍을 구비하고, 환형상 고 투자율 유전 영역 밑에 놓인 유전성 절연 영역(30)과, 유전성 절연 영역(30)의 트인구멍은 메모리 셀(10)을 형성하도록 제1전류 전극 또는 제2전류 전극의 어느 하나의 위치를 노출하고 게이트는 게이트 유전체에 의해 채널 영역으로부터 절연되며, 채널 영역에 인접한 게이트(26)와 채널 영역에 의해 분할되는 제1전류 전극(16)과 제2전류 전극(18)을 구비하며 유전성 절연 영역(30)밑에 놓인 트랜지스터(18, 16, 26, 24)를 부가로 포함하는 것을 특징으로 하는 반도체 캐패시터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930008267A 1992-05-26 1993-05-14 캐패시터와 그 형성방법 KR100263102B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US887,942 1992-05-26
US07/887,942 US5313089A (en) 1992-05-26 1992-05-26 Capacitor and a memory cell formed therefrom

Publications (2)

Publication Number Publication Date
KR930024166A true KR930024166A (ko) 1993-12-22
KR100263102B1 KR100263102B1 (ko) 2000-08-01

Family

ID=25392181

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930008267A KR100263102B1 (ko) 1992-05-26 1993-05-14 캐패시터와 그 형성방법

Country Status (3)

Country Link
US (2) US5313089A (ko)
JP (1) JPH06163821A (ko)
KR (1) KR100263102B1 (ko)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE39665E1 (en) 1992-03-13 2007-05-29 Micron Technology, Inc. Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing
US5162248A (en) * 1992-03-13 1992-11-10 Micron Technology, Inc. Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing
US5478782A (en) * 1992-05-25 1995-12-26 Sony Corporation Method bonding for production of SOI transistor device
EP0784347A2 (en) * 1992-06-18 1997-07-16 Matsushita Electronics Corporation Semiconductor device having capacitor
US6664115B2 (en) * 1992-10-23 2003-12-16 Symetrix Corporation Metal insulator structure with polarization-compatible buffer layer
US5439840A (en) * 1993-08-02 1995-08-08 Motorola, Inc. Method of forming a nonvolatile random access memory capacitor cell having a metal-oxide dielectric
KR970007967B1 (en) * 1994-05-11 1997-05-19 Hyundai Electronics Ind Fabrication method and semiconductor device
US5416042A (en) * 1994-06-09 1995-05-16 International Business Machines Corporation Method of fabricating storage capacitors using high dielectric constant materials
JP2982855B2 (ja) * 1994-09-20 1999-11-29 日本電気株式会社 半導体装置とその製造方法
KR100342296B1 (ko) * 1994-10-04 2002-11-29 코닌클리케 필립스 일렉트로닉스 엔.브이. 산소장벽이마련된하부전극을가지는강유전성의메모리소자를포함하는반도체장치와그의제조방법
US5510296A (en) * 1995-04-27 1996-04-23 Vanguard International Semiconductor Corporation Manufacturable process for tungsten polycide contacts using amorphous silicon
US5965924A (en) * 1995-11-22 1999-10-12 Cypress Semiconductor Corp. Metal plug local interconnect
US5633781A (en) * 1995-12-22 1997-05-27 International Business Machines Corporation Isolated sidewall capacitor having a compound plate electrode
US5585998A (en) * 1995-12-22 1996-12-17 International Business Machines Corporation Isolated sidewall capacitor with dual dielectric
US5712759A (en) * 1995-12-22 1998-01-27 International Business Machines Corporation Sidewall capacitor with L-shaped dielectric
US5914851A (en) * 1995-12-22 1999-06-22 International Business Machines Corporation Isolated sidewall capacitor
US6309971B1 (en) 1996-08-01 2001-10-30 Cypress Semiconductor Corporation Hot metallization process
DE19640273C1 (de) * 1996-09-30 1998-03-12 Siemens Ag Verfahren zur Herstellung barrierenfreier Halbleiterspeicheranordnungen
DE19640413A1 (de) * 1996-09-30 1998-04-02 Siemens Ag Verfahren zur Herstellung barrierenfreier Halbleiterspeicheranordnungen
US5763304A (en) * 1996-10-07 1998-06-09 Vanguard International Semiconductor Corporation Method for manufacturing a capacitor with chemical mechanical polishing
US5821139A (en) * 1996-10-07 1998-10-13 Vanguard International Semiconductor Corporation Method for manufacturing a DRAM with increased electrode surface area
US6265781B1 (en) * 1996-10-19 2001-07-24 Micron Technology, Inc. Methods and solutions for cleaning polished aluminum-containing layers, methods for making metallization structures, and the structures resulting from these methods
US6033919A (en) * 1996-10-25 2000-03-07 Texas Instruments Incorporated Method of forming sidewall capacitance structure
US5998256A (en) 1996-11-01 1999-12-07 Micron Technology, Inc. Semiconductor processing methods of forming devices on a substrate, forming device arrays on a substrate, forming conductive lines on a substrate, and forming capacitor arrays on a substrate, and integrated circuitry
DE19646208C2 (de) * 1996-11-08 2001-08-30 Infineon Technologies Ag Verfahren zur Herstellung eines Kondensators und Speicherfeld
US5728618A (en) * 1997-06-04 1998-03-17 Vanguard International Semiconductor Corporation Method to fabricate large capacitance capacitor in a semiconductor circuit
US6193832B1 (en) * 1997-07-25 2001-02-27 International Business Machines Corporation Method of making dielectric catalyst structures
US6130182A (en) * 1997-07-25 2000-10-10 International Business Machines Corporation Dielectric catalyst structures
US6197267B1 (en) 1997-07-25 2001-03-06 International Business Machines Corporation Catalytic reactor
US6590250B2 (en) 1997-11-25 2003-07-08 Micron Technology, Inc. DRAM capacitor array and integrated device array of substantially identically shaped devices
US6165833A (en) * 1997-12-19 2000-12-26 Micron Technology, Inc. Semiconductor processing method of forming a capacitor
US6150691A (en) 1997-12-19 2000-11-21 Micron Technology, Inc. Spacer patterned, high dielectric constant capacitor
US6911371B2 (en) 1997-12-19 2005-06-28 Micron Technology, Inc. Capacitor forming methods with barrier layers to threshold voltage shift inducing material
US5821141A (en) * 1998-01-12 1998-10-13 Taiwan Semiconductor Manufacturing Company, Ltd Method for forming a cylindrical capacitor in DRAM having pin plug profile
US6190955B1 (en) 1998-01-27 2001-02-20 International Business Machines Corporation Fabrication of trench capacitors using disposable hard mask
US6452271B2 (en) 1998-07-31 2002-09-17 Micron Technology, Inc. Interconnect component for a semiconductor die including a ruthenium layer and a method for its fabrication
US6107155A (en) * 1998-08-07 2000-08-22 Taiwan Semiconductor Manufacturing Company Method for making a more reliable storage capacitor for dynamic random access memory (DRAM)
US6228736B1 (en) 1998-08-07 2001-05-08 Taiwan Semiconductor Manufacturing Company Modified method for forming cylinder-shaped capacitors for dynamic random access memory (DRAM)
US6635562B2 (en) 1998-09-15 2003-10-21 Micron Technology, Inc. Methods and solutions for cleaning polished aluminum-containing layers
US6207524B1 (en) * 1998-09-29 2001-03-27 Siemens Aktiengesellschaft Memory cell with a stacked capacitor
KR100282487B1 (ko) 1998-10-19 2001-02-15 윤종용 고유전 다층막을 이용한 셀 캐패시터 및 그 제조 방법
SG79292A1 (en) 1998-12-11 2001-03-20 Hitachi Ltd Semiconductor integrated circuit and its manufacturing method
US6228699B1 (en) 1998-12-14 2001-05-08 Taiwan Semiconductor Manufacturing Company Cross leakage of capacitors in DRAM or embedded DRAM
US6346454B1 (en) * 1999-01-12 2002-02-12 Agere Systems Guardian Corp. Method of making dual damascene interconnect structure and metal electrode capacitor
JP2000208743A (ja) * 1999-01-12 2000-07-28 Lucent Technol Inc ジュアルダマシ―ンコンデンサを備えた集積回路デバイスおよびこれを製造するための関連する方法
US6696718B1 (en) * 1999-04-06 2004-02-24 Micron Technology, Inc. Capacitor having an electrode formed from a transition metal or a conductive metal-oxide, and method of forming same
US6218256B1 (en) 1999-04-13 2001-04-17 Micron Technology, Inc. Electrode and capacitor structure for a semiconductor device and associated methods of manufacture
KR100376268B1 (ko) 1999-09-10 2003-03-17 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
KR100351238B1 (ko) 1999-09-14 2002-09-09 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
US6753556B2 (en) * 1999-10-06 2004-06-22 International Business Machines Corporation Silicate gate dielectric
KR100482753B1 (ko) 1999-11-09 2005-04-14 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
US6265280B1 (en) * 1999-11-29 2001-07-24 Chartered Semiconductor Manufacturing, Inc. Method for manufacturing a cylindrical semiconductor capacitor
US6780704B1 (en) * 1999-12-03 2004-08-24 Asm International Nv Conformal thin films over textured capacitor electrodes
KR100351254B1 (ko) 1999-12-22 2002-09-09 주식회사 하이닉스반도체 반도체 소자의 게이트 전극 형성 방법
KR100376264B1 (ko) 1999-12-24 2003-03-17 주식회사 하이닉스반도체 게이트 유전체막이 적용되는 반도체 소자의 제조 방법
KR100358069B1 (ko) 1999-12-27 2002-10-25 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
US20020113268A1 (en) * 2000-02-01 2002-08-22 Jun Koyama Nonvolatile memory, semiconductor device and method of manufacturing the same
US6384468B1 (en) 2000-02-07 2002-05-07 International Business Machines Corporation Capacitor and method for forming same
US6303456B1 (en) 2000-02-25 2001-10-16 International Business Machines Corporation Method for making a finger capacitor with tuneable dielectric constant
US6274899B1 (en) * 2000-05-19 2001-08-14 Motorola, Inc. Capacitor electrode having conductive regions adjacent a dielectric post
DE10066082B4 (de) * 2000-06-14 2006-05-18 Infineon Technologies Ag Gezielte lokale Erzeugung von Öffnungen in einer Schicht
JP5290488B2 (ja) 2000-09-28 2013-09-18 プレジデント アンド フェロウズ オブ ハーバード カレッジ 酸化物、ケイ酸塩及びリン酸塩の気相成長
US7087997B2 (en) * 2001-03-12 2006-08-08 International Business Machines Corporation Copper to aluminum interlayer interconnect using stud and via liner
US6455938B1 (en) * 2001-07-13 2002-09-24 Advanced Micro Devices, Inc. Integrated circuit interconnect shunt layer
EP1294021A1 (de) * 2001-08-31 2003-03-19 Infineon Technologies AG Kondensatoreinrichtung für eine Halbleiterschaltungsanordnung und Verfahren zu deren Herstellung
JP2003124757A (ja) * 2001-10-16 2003-04-25 Texas Instr Japan Ltd アーリー効果の影響を低減する方法および装置
TW544916B (en) * 2002-01-10 2003-08-01 Winbond Electronics Corp Memory device having complex type contact plug and its manufacturing method
US20030224958A1 (en) * 2002-05-29 2003-12-04 Andreas Michael T. Solutions for cleaning polished aluminum-containing layers
KR100502410B1 (ko) * 2002-07-08 2005-07-19 삼성전자주식회사 디램 셀들
JP4256670B2 (ja) * 2002-12-10 2009-04-22 富士通株式会社 容量素子、半導体装置およびその製造方法
JP2004221467A (ja) * 2003-01-17 2004-08-05 Fujitsu Ltd 半導体装置及びその製造方法
JP2006228943A (ja) * 2005-02-17 2006-08-31 Nec Electronics Corp 半導体装置および半導体装置の製造方法
KR100640639B1 (ko) * 2005-04-19 2006-10-31 삼성전자주식회사 미세콘택을 포함하는 반도체소자 및 그 제조방법
US20070003737A1 (en) * 2005-06-30 2007-01-04 Rami Khalaf Polymer to gold adhesion improvement by chemical and mechanical gold surface roughening
KR100885790B1 (ko) 2006-01-04 2009-02-26 주식회사 하이닉스반도체 플래쉬 메모리 소자 및 그 제조 방법
JP2007184605A (ja) * 2006-01-04 2007-07-19 Hynix Semiconductor Inc 非揮発性メモリ素子、その製造方法及びそのプログラム方法
US8026605B2 (en) * 2006-12-14 2011-09-27 Lam Research Corporation Interconnect structure and method of manufacturing a damascene structure
TWI396242B (zh) * 2009-08-11 2013-05-11 Pixart Imaging Inc 微電子裝置、微電子裝置的製造方法、微機電封裝結構及其封裝方法
US8247253B2 (en) * 2009-08-11 2012-08-21 Pixart Imaging Inc. MEMS package structure and method for fabricating the same
TWI549301B (zh) * 2014-05-27 2016-09-11 華亞科技股份有限公司 垂直式電晶體結構與形成垂直式電晶體結構接觸節點的方法
US9842839B1 (en) * 2017-01-12 2017-12-12 Micron Technology, Inc. Memory cell, an array of memory cells individually comprising a capacitor and a transistor with the array comprising rows of access lines and columns of digit lines, a 2T-1C memory cell, and methods of forming an array of capacitors and access transistors there-above

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60158654A (ja) * 1984-01-28 1985-08-20 Seiko Epson Corp 半導体装置
JPS6394669A (ja) * 1986-10-08 1988-04-25 Mitsubishi Electric Corp 半導体記憶装置
US5046043A (en) * 1987-10-08 1991-09-03 National Semiconductor Corporation Ferroelectric capacitor and memory cell including barrier and isolation layers
JP2606857B2 (ja) * 1987-12-10 1997-05-07 株式会社日立製作所 半導体記憶装置の製造方法
JPH0744226B2 (ja) * 1988-01-21 1995-05-15 富士通株式会社 半導体装置及びその製造方法
US5047815A (en) * 1988-08-18 1991-09-10 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device having a trench-stacked capacitor
JPH0311761A (ja) * 1989-06-09 1991-01-21 Seiko Epson Corp 半導体装置
JPH07114260B2 (ja) * 1989-11-23 1995-12-06 財団法人韓国電子通信研究所 コップ状のポリシリコン貯蔵電極を有するスタック構造のｄｒａｍセル，およびその製造方法
JP2528719B2 (ja) * 1989-12-01 1996-08-28 三菱電機株式会社 半導体記憶装置
DE4041271C2 (de) * 1989-12-25 1998-10-08 Toshiba Kawasaki Kk Halbleitervorrichtung mit einem ferroelektrischen Kondensator
JPH03231458A (ja) * 1990-02-07 1991-10-15 Matsushita Electric Ind Co Ltd 半導体メモリ装置及びその製造方法
KR940001425B1 (ko) * 1990-11-06 1994-02-23 재단법인 한국전자통신연구소 수직구조를 갖는 바이폴라형 다이내믹 램을 제조하는 방법 및 그 다이내믹 램의 구조
US5150276A (en) * 1992-01-24 1992-09-22 Micron Technology, Inc. Method of fabricating a vertical parallel cell capacitor having a storage node capacitor plate comprising a center fin effecting electrical communication between itself and parallel annular rings

Also Published As

Publication number Publication date
US5405796A (en) 1995-04-11
KR100263102B1 (ko) 2000-08-01
JPH06163821A (ja) 1994-06-10
US5313089A (en) 1994-05-17

Similar Documents

Publication Publication Date Title
KR930024166A (ko) 캐패시터와 그 형성방법
KR930020690A (ko) 동적 메모리 셀
US5281837A (en) Semiconductor memory device having cross-point DRAM cell structure
KR970004107A (ko) 필드 차단 격리부 및 보디 접촉부를 갖는 soi dram
KR950007117A (ko) 금속 산화물 유전체를 갖는 커패시터
KR930022555A (ko) 루테늄산염 전극을 갖는 커패시터
KR960016773B1 (en) Buried bit line and cylindrical gate cell and forming method thereof
KR900019016A (ko) 디램셀의 제조방법
KR900003896A (ko) 반도체 메모리와 그 제조방법
KR930020666A (ko) 수직형 집적 반도체 구조체
KR950010090A (ko) 반도체장치 및 그 제조방법
KR940027149A (ko) 반도체 기억 장치 및 그 제조 방법
KR870008318A (ko) 트렌치 콘덴서를 갖춘 다이나믹 랜덤 억세스메모리
KR910019235A (ko) 반도체기억장치
KR840000083A (ko) 반도체 기억장치
KR970067851A (ko) 강자성체 비휘발성 메모리 셀 및 메모리 셀 형성 방법
KR960012495A (ko) 메모리 셀용 스위칭 트랜지스터 및 캐패시터
US4827448A (en) Random access memory cell with implanted capacitor region
WO2001041186A3 (de) Dreitransistor-dram-zelle und dazugehöriges herstellungsverfahren
KR920020719A (ko) 반도체 메로리의 제조방법
KR940012614A (ko) 고집적 반도체 접속장치 및 그 제조방법
KR950004522A (ko) 차폐용 플레이트를 갖는 반도체소자 제조방법
TW369694B (en) DRAM capacitor structure and its process
KR960032746A (ko) 비트라인 상부에 형성된 커패시터를 갖는 반도체 메모리장치
KR100311179B1 (ko) 모스캐패시터

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130425

Year of fee payment: 14

EXPY Expiration of term