KR840000083A - 반도체 기억장치 - Google Patents

반도체 기억장치 Download PDF

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KR840000083A
KR840000083A KR1019820002305A KR820002305A KR840000083A KR 840000083 A KR840000083 A KR 840000083A KR 1019820002305 A KR1019820002305 A KR 1019820002305A KR 820002305 A KR820002305 A KR 820002305A KR 840000083 A KR840000083 A KR 840000083A
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melting point
high melting
point metal
memory device
semiconductor memory
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KR1019820002305A
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KR910002303B1 (ko
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신지 시미즈 (외 1)
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미쓰다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
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Publication of KR840000083A publication Critical patent/KR840000083A/ko
Priority to KR919100044A priority Critical patent/KR910002293B1/ko
Priority to KR1019910000046A priority patent/KR910002305B1/ko
Application granted granted Critical
Publication of KR910002303B1 publication Critical patent/KR910002303B1/ko
Priority to KR1019910000045A priority patent/KR910002304B1/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76889—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by forming silicides of refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

내용 없음

Description

반도체 기억장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 A는 반도체 기억장치의 메모리 어레이(memory array) 내부의 메모리 셀(memory cell)의 부분단면도. 제1도 B는 반도체 기억장치의 메모리 어레이 주변에 형성되어 있는 절연 게이트형 전계효과 트랜지스터의 구조적 단면도. 제1도 C는 반도체 기억장치의 메모리 어레이 내부에서의 제1배 선층과 제2배 선층이 교차하고 있는 곳의 부분 단면도.

Claims (8)

  1. 캐파시터와 절연게이트형 전계효과 트랜지스터(MISFET)로 이루어진 여러개의 메모리셀이 하나의 반도체칩(chip) 내에 가로, 세로, 규칙적으로 배치되어 있는 메모리셀 어레이와 그리고 절연 게이트형 전계효과 트랜지스터로 이루어진 주변회로와 상기의 메모리셀 어레이가 하나의 반도체 칩내에 배치되어 있는 반도체 장치에서 각 캐파시터의 한쪽 전극은 반도체칩 위에 형성된 제1다결정 실리콘층이 전극이 되게 하고 각 메모리셀과 주변회로 내의 절연게이트형 트랜지스터들의 게이트 전극으로 절연막 위에다 하층은 다결정 실리콘층 상층은 실리콘을 함유하는 고융점 금속층으로 된 다층구조의 도체층을 형성시킨 반도체 기억장치.
  2. 상기 청구범위 1의 반도체 기억장치에 있어서 상위층인 실리콘을 함유하는 고융점 금속층 내의 실리콘의 함량을 최소한 중량비 40%로 하는 것.
  3. 상기 청구범위 1의 반도체 기억장치에 있어서 상위층인 실리콘을 함유하는 고융점 금속층의 고융점 금속재료로 몰리브덴을 사용하는 것.
  4. 상기 청구범위 1의 반도체 기억장치에 있어서 상위층인 실리콘을 함유하는 고융점 금속층의 고융점 금속재료로 텅그스텐을 사용하는 것.
  5. 상기 청구범위 1의 반도체 기억장치에 있어서 상위층인 실리콘을 함유하는 고융점 금속층의 고융점 금속재료로 탄탈륨을 사용하는 것.
  6. 상기 청구범위 1의 반도체 기억장치에 있어서 상위층인 실리콘을 함유하는 고융점 금속층의 고융점 금속재료로 티타늄을 사용하는 것.
  7. 상기 청구범위 1에서 6까지의 반도체 기억장치에 있어서 제2층의 표면을 산화시켜 표면에 산화피막을 만드는 것.
  8. 상기 청구범위 1에서 6까지의 반도체 기억장치에 있어서 메모리셀 어레이내에 종으로 배열된 절연게이트형 전계효과 트랜지스터를 서로 관계되는 것끼리 공동으로 형성시켜서 메모리셀 어레이의 워드라인이 되게 하는 것.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR8202305A 1981-05-27 1982-05-25 반도체 기억장치 KR910002303B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR919100044A KR910002293B1 (ko) 1981-05-27 1991-01-04 반도체 기억장치의 제조방법
KR1019910000046A KR910002305B1 (ko) 1981-05-27 1991-01-04 반도체 기억장치
KR1019910000045A KR910002304B1 (ko) 1981-05-27 1991-07-02 반도체 장치의 배선층의 형성방법

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP56-79210 1981-05-27
JP56-079210 1981-05-27
JP56079210A JPS57194567A (en) 1981-05-27 1981-05-27 Semiconductor memory device

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KR919100044A Division KR910002293B1 (ko) 1981-05-27 1991-01-04 반도체 기억장치의 제조방법
KR1019910000046A Division KR910002305B1 (ko) 1981-05-27 1991-01-04 반도체 기억장치
KR1019910000045 Division 1991-01-14 1991-01-14

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KR840000083A true KR840000083A (ko) 1984-01-30
KR910002303B1 KR910002303B1 (ko) 1991-04-11

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KR8202305A KR910002303B1 (ko) 1981-05-27 1982-05-25 반도체 기억장치
KR9009660A KR900008667B1 (en) 1981-05-27 1990-06-28 A method for manufacturing semiconductor memory device
KR1019910000045A KR910002304B1 (ko) 1981-05-27 1991-07-02 반도체 장치의 배선층의 형성방법

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KR9009660A KR900008667B1 (en) 1981-05-27 1990-06-28 A method for manufacturing semiconductor memory device
KR1019910000045A KR910002304B1 (ko) 1981-05-27 1991-07-02 반도체 장치의 배선층의 형성방법

Country Status (9)

Country Link
US (1) US4612565A (ko)
JP (1) JPS57194567A (ko)
KR (3) KR910002303B1 (ko)
DE (1) DE3219639A1 (ko)
GB (1) GB2107114B (ko)
HK (1) HK70387A (ko)
IT (1) IT1151245B (ko)
MY (1) MY8700606A (ko)
SG (1) SG37287G (ko)

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Also Published As

Publication number Publication date
MY8700606A (en) 1987-12-31
DE3219639A1 (de) 1982-12-23
SG37287G (en) 1987-07-24
KR910002303B1 (ko) 1991-04-11
KR920002830A (ko) 1992-02-28
KR910002304B1 (ko) 1991-04-11
KR900008667B1 (en) 1990-11-26
HK70387A (en) 1987-10-09
GB2107114A (en) 1983-04-20
GB2107114B (en) 1986-02-12
IT8221482A0 (it) 1982-05-25
IT1151245B (it) 1986-12-17
JPS57194567A (en) 1982-11-30
US4612565A (en) 1986-09-16

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