KR930018704A - 리드-온-칩 반도체 장치 - Google Patents

리드-온-칩 반도체 장치 Download PDF

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KR930018704A
KR930018704A KR1019930000791A KR930000791A KR930018704A KR 930018704 A KR930018704 A KR 930018704A KR 1019930000791 A KR1019930000791 A KR 1019930000791A KR 930000791 A KR930000791 A KR 930000791A KR 930018704 A KR930018704 A KR 930018704A
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chip
lead
working surface
leads
bond pads
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KR1019930000791A
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KR100276781B1 (ko
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지. 비글러 챨스
제이. 카스토 제임스
비. 맥샤인 마이클
디. 아프샤 데이비드
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빈센트 비. 인그라시아
모토로라 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/4951—Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Die Bonding (AREA)

Abstract

본 발명의 반도체 장치(10)는 리-온-칩(LOC)형태를 갖는다. 상기 장치의 리드(24)는 전도성 와이어(30)에 의해 주변 본드패드(14)에 전기적으로 연결된 중심부(36)를 갖는다.
리드의 안쪽부분(38)은 접착력을 개선하고 와이어 보닝중에 리드를 안정시키는 내부 클램핑 영역(41)을 제공하기 위해 중심부로부터 중심선(A-A)을 향해 연장된다. 한 실시예에서, 리드 프레임의 타이 바아(22)는 반도체 칩(12)을 가로질러 전원을 분배시키는데 사용된다. 또한 상기 리드 프레임은 칩(12)과 절연 테이프(18)를 리드 프레임에 각각 배열시키기 위해 칩 얼라인먼트 형상부(50)와 테이프 얼라인먼트 형상부(52)를 포함할 수 있다.

Description

리드-온-칩 반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 실시예에 따른 반도체 장치의 평면도.
제2도는 제1도 영역(34)의 분해도.
제3도는 본 발명의 다른 실시예에 따른 반도체 장치의 평면도.

Claims (4)

  1. 리드-온-칩 반도체 장치(10 또는 70)에 있어서, 칩의 두 대향면을 교차하는 중심선(A-A)을 갖는 작용면과 주변을 모두 구비한 반도체 칩(12)과, 주변을 따라 칩의 작용면상에 형성된 다수의 본드 패드(14) 및, 다수의 본드 패드가 삽입되고 칩의 작용면에 놓인 부분을 갖는 다수의 리드를 포함하며, 상기 각각의 리드는, 전도성 와이어(30)에 의해 다수의 본드패드중의 하나에 전기적으로 연결된 중앙부(36)와, 상기 리드의 중심부분으로부터 칩의 작용면의 중심선을 향해 연장된 안쪽부분(38) 및, 칩으로부터 이격되어 리드의 중심부분에서 연장된 바깥부분(42)을 포함하는 것을 특징으로 하는 리드-온-칩 반도체 장치.
  2. 리드-온-칩 반도체 장치(10 또는 70)에 있어서, 작용면과 4개의 측면 및 4개의 모퉁이를 갖는 반도체 칩(12)과, 칩의 작용면상에 형성된 다수의 본드패드(14) 및, 칩의 작용면상에 놓이고 다수의 본드패드에 전기적으로 연결된 부분을 갖는 다수의 리드(24)를 구비하며, 상기 다수의 리드중 적어도 두개의 리드는 칩의 한쪽면이나 모퉁이에 배열된 돌출부(50)를 갖는 것을 특징으로 하는 리드-온-칩 반도체 장치.
  3. 리드-온-칩 반도체 장치(10 또는 70)제조 방법에 있어서, 작용면, 중심(A-A), 주변부 및 상기 주변부를 따라 칩의 작용면상 형성된 다수의 본드패드(14)를 가지는 반도체 칩(12)을 제공하는 단계와, 각각 안쪽부분(38)을 갖는 다수의 리드(24)를 구비한 리드 프레임(16)을 제공하는 단계와, 다수의 리드의 안쪽 부분들이 작용면상에 놓이고 칩의 중심선을 향해 연장되도록 칩을 리드 프레임에 접착하는 단계와, 클램핑 기구를 갖는 와이어 본딩 장치에 부착된 칩을 구비한 리드프레임을 위치시키는 단계와, 상기 리드의 실질적인 이동을 억제하도록 상기 클램핑 공구를 갖는 칩의 작용면에 대해 다수의 리드의 안쪽 부분을 클램핑하는 단계 및, 다수의 본드패드중 하나에 다수 리드의 각각의 클램프 되지 않은 부분을 와이어 본딩하는 단계를 포함하는 것을 특징으로 하는 리드-온-칩 반도체 장치.
  4. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019930000791A 1992-02-03 1993-01-21 리드-온-칩 반도체장치 및 그 제조방법 KR100276781B1 (ko)

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US82987092A 1992-02-03 1992-02-03
US829,870 1992-02-03

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KR100276781B1 KR100276781B1 (ko) 2001-01-15

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US (2) US5455200A (ko)
EP (2) EP0554742B1 (ko)
JP (1) JP3161128B2 (ko)
KR (1) KR100276781B1 (ko)
DE (2) DE69332191T2 (ko)
SG (1) SG46298A1 (ko)

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US5455200A (en) 1995-10-03
EP0843356B1 (en) 2002-08-07
EP0843356A3 (en) 1998-10-28
EP0554742A2 (en) 1993-08-11
JP3161128B2 (ja) 2001-04-25
DE69332191D1 (de) 2002-09-12
EP0843356A2 (en) 1998-05-20
KR100276781B1 (ko) 2001-01-15
DE69332191T2 (de) 2002-12-12
DE69321266T2 (de) 1999-04-29
EP0554742A3 (en) 1993-09-08
EP0554742B1 (en) 1998-09-30
JPH05275606A (ja) 1993-10-22
US5381036A (en) 1995-01-10
DE69321266D1 (de) 1998-11-05

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