KR930008868A - 시험회로를 내장한 기억용 반도체 집적회로 - Google Patents

시험회로를 내장한 기억용 반도체 집적회로 Download PDF

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Publication number
KR930008868A
KR930008868A KR1019910018043A KR910018043A KR930008868A KR 930008868 A KR930008868 A KR 930008868A KR 1019910018043 A KR1019910018043 A KR 1019910018043A KR 910018043 A KR910018043 A KR 910018043A KR 930008868 A KR930008868 A KR 930008868A
Authority
KR
South Korea
Prior art keywords
test
circuit
silicon layer
integrated circuit
memory integrated
Prior art date
Application number
KR1019910018043A
Other languages
English (en)
Other versions
KR940006676B1 (ko
Inventor
나까시마 다까시
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019910018043A priority Critical patent/KR940006676B1/ko
Priority to ITMI920457A priority patent/IT1254651B/it
Priority to GB9204291A priority patent/GB2260618B/en
Priority to FR9202391A priority patent/FR2682521B1/fr
Priority to US07/843,260 priority patent/US5351213A/en
Priority to DE4206344A priority patent/DE4206344C2/de
Priority to JP9091292A priority patent/JP2526344B2/ja
Publication of KR930008868A publication Critical patent/KR930008868A/ko
Application granted granted Critical
Publication of KR940006676B1 publication Critical patent/KR940006676B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Semiconductor Memories (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

본 발명은 시험회로를 내장한 기억용 반도체 집적회로로서, 바꾸어 써넣을 수 있는 기억용 반도체 집적회로의 시험용 일괄기 입회로에 있어서, 시험용 일괄기입신호 전송선과 시험용 일괄기립 신호단속용 전계효과 트랜지스터의 챈널을 다결정실리콘층 또는 비결정 실리콘층으로 형성하거나 시험용 출력일괄 비교회로에 사용하는 상태검출용 신호전송선과 전계효과 트랜지스터의 챈널을 다결정실리콘층 또는 비결정실리콘층으로 형성한 시험회로를 내장한 반도체 집적회로이다.

Description

시험회로를 내장한 기억용 반도체 집적회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도 (A)는 각 DARM세대에 대한 테스트 시간을 나타내느 그래프.
제3도 (B)는 종래의 LMT 방식과 MMT 방식의 비교도.
제4도는 본 발명의 실시예를 나타낸 요부회로도.

Claims (2)

  1. 바꾸어 써넣을 수 있는 기억용 반도체 집적회로의 시험용 일괄기입회로에 있어서, 시험용 일괄기입 신호전송선과 시험용 일괄기 입신호단속용 전계효과 트랜지스터의 챈널을 다결정 실리콘층 또는 비결정 실리콘층으로 형성한 시험회로를 내장한 기억용 반도체 집적회로.
  2. 시험용 출력일괄 비교회로에 사용하는 상태검출용 신호전송선과 전계효과 트랜지스터의 챈널을 다결정 실리콘층 또는 비결정 실리콘층으로 형성한 시험회로를 내장한 반도체 집적회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910018043A 1991-10-14 1991-10-14 시험회로를 내장한 기억용 반도체 집적회로 KR940006676B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019910018043A KR940006676B1 (ko) 1991-10-14 1991-10-14 시험회로를 내장한 기억용 반도체 집적회로
ITMI920457A IT1254651B (it) 1991-10-14 1992-02-28 Dispositivo di memoria integrato a semiconduttori utilizzante un circuito di prova
GB9204291A GB2260618B (en) 1991-10-14 1992-02-28 An integrated semiconductor memory device with a test circuit
FR9202391A FR2682521B1 (fr) 1991-10-14 1992-02-28 Dispositif integre a memoire a semiconducteurs.
US07/843,260 US5351213A (en) 1991-10-14 1992-02-28 Integrated semiconductor memory device utilizing a test circuit
DE4206344A DE4206344C2 (de) 1991-10-14 1992-02-29 Integrierter Halbleiterspeicherbaustein, der eine Prüfschaltung verwendet
JP9091292A JP2526344B2 (ja) 1991-10-14 1992-04-10 試験回路を内蔵したメモリ―用半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910018043A KR940006676B1 (ko) 1991-10-14 1991-10-14 시험회로를 내장한 기억용 반도체 집적회로

Publications (2)

Publication Number Publication Date
KR930008868A true KR930008868A (ko) 1993-05-22
KR940006676B1 KR940006676B1 (ko) 1994-07-25

Family

ID=19321217

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910018043A KR940006676B1 (ko) 1991-10-14 1991-10-14 시험회로를 내장한 기억용 반도체 집적회로

Country Status (7)

Country Link
US (1) US5351213A (ko)
JP (1) JP2526344B2 (ko)
KR (1) KR940006676B1 (ko)
DE (1) DE4206344C2 (ko)
FR (1) FR2682521B1 (ko)
GB (1) GB2260618B (ko)
IT (1) IT1254651B (ko)

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Also Published As

Publication number Publication date
GB2260618B (en) 1996-05-22
IT1254651B (it) 1995-09-28
GB9204291D0 (en) 1992-04-08
JP2526344B2 (ja) 1996-08-21
DE4206344A1 (de) 1993-04-15
DE4206344C2 (de) 1994-04-21
ITMI920457A1 (it) 1993-08-28
FR2682521B1 (fr) 1996-03-15
ITMI920457A0 (it) 1992-02-28
US5351213A (en) 1994-09-27
GB2260618A (en) 1993-04-21
FR2682521A1 (fr) 1993-04-16
KR940006676B1 (ko) 1994-07-25
JPH05274899A (ja) 1993-10-22

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