KR920015514A - 질화갈륨계 화합물 반도체의 결정성장방법 - Google Patents

질화갈륨계 화합물 반도체의 결정성장방법 Download PDF

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KR920015514A
KR920015514A KR1019920001542A KR920001542A KR920015514A KR 920015514 A KR920015514 A KR 920015514A KR 1019920001542 A KR1019920001542 A KR 1019920001542A KR 920001542 A KR920001542 A KR 920001542A KR 920015514 A KR920015514 A KR 920015514A
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crystal growth
group
buffer layer
compound semiconductor
temperature
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슈지 나까무라
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오가와 에이지
니치아 가가꾸 고오쿄오 가부시기가이샤
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Abstract

내용 없음

Description

질화갈륨계 화합물을 반도체의 결정성장방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 결정성장방법에 의한 에피택셜 웨이퍼의 구조를 표시한 개략 단면도.

Claims (19)

  1. 기판위에 제1온도에서 일반식 GaxAl1-xN(단 X는 0≤X≤1의 범위이다)로 표시되는 버퍼층을 기상성장시키는 공정; 및 형성된 버퍼층위에, 상기 제1온도보다 높은 제2의 온도에서 일반식 GaxAl1-xN(단 X는 0≤X≤1의 범위이다)로 표시되는 반도체층을 기상성장시키는 공정을 구비한 질화갈륨계 화합물 반도체의 결정성장방법.
  2. 제1항에 있어서, 상기 질화갈륨계 화합물 반도체층위에, 제3의 온도에서, 일반식 GaxAl1-xN(단 X는 0＜X≤1의 범위이다)로 표시되는 타의 버퍼층을 기상성장시키는 공정; 및 형성된 타의 버퍼층 위에, 상기 제2의 온도보다 높은 제4의 온도에서, 일반식 GaxAl1-xN(단 X는 0≤X≤1의 범위이다)로 표시되는 반도체층을 기상성장시키는 공정을 다시 구비하는 질화갈륨계 화합물 반도체의 결정성장방법.
  3. 제1항에 있어서, 상기 버퍼층에 n형 p형의 불순물을 도프하는 공정을 포함하는 질화갈륨계 화합물 반도체의 결정성장방법.
  4. 제3항에 있어서, 상기 n형의 불순물은 Si 및 Sn으로 이루어지는 군에서 선택된 적어도 1종인 질화갈륨계 화합물 반도체의결정성장방법.
  5. 제3항에 있어서, 상기 p형의 불순물은 Zn, Mg, Ca 및 Be로 이루어지는 군에서 선택된 적어도 1종인 질화갈륨계 화합물 반도체의 결정성장방법.
  6. 제3항에 있어서, 상기 n형 또는 p형의 불순물의 도프량은 1017~1020/㎤인 질화갈륨계 화합물 반도체의 결정성장방법.
  7. 제1항에 있어서,상기 반도체층에 n형 또는 p형의 불순물을 도프하는 공정을 포함하는 질화갈륨계 화합물 반도체의 결정성장방법.
  8. 제7항에 있어서, 상기 n형의 불순물은 Si 및 Sn으로 이루어지는 군에서 선택된 적어도 1종인 질화갈륨계 화합물 반도체의결정성장방법.
  9. 제7항에 있어서, 상기 p형 불순물은 Zn, Mg, Ca 및 Be로 이루어지는 군에서 선택된 적어도 1종인 질화갈륨계 화합물 반도체의 결정성장방법.
  10. 제7항에 있어서, 상기 n형 또는 p형의 불순물의 도프량은 1010~1020/㎤인 질화갈륨계 화합물 반도체의 결정성장방법.
  11. 제1항에 있어서, 상기 버퍼층은 트리메틸갈륨 및 트리에틸갈륨으로 이루어지는 군에서 선택된 적어도 1종과 암모니아 및히드라진으로 이루어진 군에서 선택된 적어도 1종을 포함하는 반응가스를 사용하여 성장시키는 질화갈륨계 화합물 반도체의 결정성장방법.
  12. 제11항에 있어서, 상기 반응가스는 트레메틸알루미늄을 함유하는 질화갈륨계 화합물 반도체의 결정성장방법.
  13. 제11항에 있어서, 상기 반응가스는 시크로펜타디에닐마그네슘, 디에틸징크 및 트리메틸징크로 이루어지는 군에서 선택된적어도 1종을 포함하는 질화갈륨계 화합물 반도체의 결정성장방법.
  14. 제1항에 있어서, 상기 기판은 사파이어, Si, SiC 및 GaAs로 이루어지는 군에서 선택된 질화갈륨계 화합물 반도체의 결정성장방법.
  15. 제1항에 있어서, 상기 제1온도는 200~900℃의 범위인 질화갈륨계 화합물 반도체의 결정성장방법.
  16. 제1항에 있어서, 상기 제2의 온도는 900~1150℃의 범위인 질화갈륨계 화합물 반도체의 결정성장방법.
  17. 제1항에 있어서, 상기 버퍼층은 0.001㎛-0.5㎛의 두께를 가지는 질화갈륨계 화합물 반도체의 결정성장방법.
  18. 제1항에 있어서, 상기 반도체층의 형성후, 형성된 반도체층위에 다시 전자선을 조사하는 공정을 구비한 질화갈륨계 화합물 반도체의 결정성장방법.
  19. 제1항에 있어서, 상기 버퍼층은 반도체층과 같은 조성을 가지는 질화갈륨계 화합물 반도체의 결정성장방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920001542A 1991-01-31 1992-01-31 질화갈륨계 화합물 반도체의 결정성장방법 KR950006968B1 (ko)

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Application Number Priority Date Filing Date Title
JP91-32259 1991-01-31
JP91-032259 1991-01-31
JP3225991 1991-01-31
JP91-89341 1991-03-27
JP91-89841 1991-03-27
JP91-89840 1991-03-27
JP8984091A JPH088217B2 (ja) 1991-01-31 1991-03-27 窒化ガリウム系化合物半導体の結晶成長方法
JP8984191 1991-03-27

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KR950006968B1 KR950006968B1 (ko) 1995-06-26

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KR100450784B1 (ko) * 1997-12-12 2004-11-16 삼성전기주식회사 Gan단결정제조방법
KR100450781B1 (ko) * 1997-08-20 2004-11-16 삼성전자주식회사 Gan단결정제조방법
KR101220826B1 (ko) * 2005-11-22 2013-01-10 삼성코닝정밀소재 주식회사 질화갈륨 단결정 후막의 제조방법

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