KR970051984A - 화합물 반도체의 에피텍시 성장방법 - Google Patents
화합물 반도체의 에피텍시 성장방법 Download PDFInfo
- Publication number
- KR970051984A KR970051984A KR1019950052670A KR19950052670A KR970051984A KR 970051984 A KR970051984 A KR 970051984A KR 1019950052670 A KR1019950052670 A KR 1019950052670A KR 19950052670 A KR19950052670 A KR 19950052670A KR 970051984 A KR970051984 A KR 970051984A
- Authority
- KR
- South Korea
- Prior art keywords
- compound semiconductor
- growth method
- type
- epitaxial growth
- ingaas
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/11—Metal-organic CVD, ruehrwein type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/16—Superlattice
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
본 발명은 인듐갈륨아세나이츠의 P-N 접합구조의 형성방법에 관한것으로 특히, 사전 열분해 공정을 거치지 않은 V 족 화합물의 원료 기체와 사전열분해 공정을 거친 Ⅲ 족의 화합물을 원료기체로 하여 N 형 전도특성을 갖는 인듐갈륨아세나이드와 P 형의 전기전도도를 나타내는 InGaAs 를 성장온도의 조절만으로 형성하는 방법에 관한것이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 에피텍시 성장시 성장온도 대 캐리어 농도의 분포도를 나타낸 그래프.
Claims (5)
- 화합물 반도체기판상에 화합물 반도체를 에피텍시 성장하는 방법에 있어서, 반응로내에 화합물 반도체기판을 실장하고, 상기 반응로내에 사전 열분해 공정을 거치지 않은 Ⅴ 족과 사전열분해된 Ⅲ 족의 유기 금속 원료기체를 주입하고 성장온도를 조절하여 p 형 또는 n 형 화합물 반도체를 형성함을 특징으로 하는 화합물 반도체의 에피텍시 성장방법.
- 제1항에 있어서, p 형 화합물 반도체를 저온에서 성장하고 높은 성장온도에서 n 형의 화합물 반도체를 성장시키는 것을 특징으로 하는 화합물 반도체의 에피텍시 성장방법.
- 제2항에 있어서, p 형 화합물 반도체로서 InGaAs 화합물 반도체박막의 증착시 성장온도를 450℃ 이하로 유지하는 것을 특징으로 하는 화합물 반도체의 에피텍시 성장방법.
- 제2항에 있어서, n 형 화합물 반도체로서 InGaAs 화합물 반도체 형성시는 성장온도를 450℃ 이상의 유지하는 것을 특징으로 하는 화합물 반도체의 에피텍시 성장방법.
- 제1항에 있어서, 상기 Ⅲ 족 유기금속 원료로서 트리메칠인듐(trimethyindum : TMI) 과 트리에칠갈륨(triethygallium : TEG) 이 사용되고, Ⅴ 족 원료로서 모노에칠아세닌(monoethyiarseine : MEA) 가 사용됨을 특징으로 하는 화합물 반도체의 에피텍시 성장방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950052670A KR0171376B1 (ko) | 1995-12-20 | 1995-12-20 | 화합물 반도체의 에피택시 성장방법 |
US08/716,646 US5858818A (en) | 1995-12-20 | 1996-09-16 | Formation of InGaSa p-n Junction by control of growth temperature |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950052670A KR0171376B1 (ko) | 1995-12-20 | 1995-12-20 | 화합물 반도체의 에피택시 성장방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970051984A true KR970051984A (ko) | 1997-07-29 |
KR0171376B1 KR0171376B1 (ko) | 1999-03-30 |
Family
ID=19441848
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950052670A KR0171376B1 (ko) | 1995-12-20 | 1995-12-20 | 화합물 반도체의 에피택시 성장방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US5858818A (ko) |
KR (1) | KR0171376B1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7345327B2 (en) | 2000-11-27 | 2008-03-18 | Kopin Corporation | Bipolar transistor |
JP2004521485A (ja) | 2000-11-27 | 2004-07-15 | コピン コーポレーション | 格子整合されたベース層を有するバイポーラトランジスタ |
US6847060B2 (en) * | 2000-11-27 | 2005-01-25 | Kopin Corporation | Bipolar transistor with graded base layer |
US6800879B2 (en) | 2001-01-08 | 2004-10-05 | Kopin Corporation | Method of preparing indium phosphide heterojunction bipolar transistors |
US7523394B2 (en) * | 2002-06-28 | 2009-04-21 | Microsoft Corporation | Word-processing document stored in a single XML file that may be manipulated by applications that understand XML |
US7935616B2 (en) * | 2004-06-17 | 2011-05-03 | Burgener Ii Robert H | Dynamic p-n junction growth |
US7566948B2 (en) * | 2004-10-20 | 2009-07-28 | Kopin Corporation | Bipolar transistor with enhanced base transport |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6055478B2 (ja) * | 1982-10-19 | 1985-12-05 | 松下電器産業株式会社 | 気相成長方法 |
WO1987003740A1 (en) * | 1985-12-09 | 1987-06-18 | Nippon Telegraph And Telephone Corporation | Process for forming thin film of compound semiconductor |
US5578521A (en) * | 1986-11-20 | 1996-11-26 | Nippondenso Co., Ltd. | Semiconductor device with vaporphase grown epitaxial |
JP2560562B2 (ja) * | 1991-04-30 | 1996-12-04 | 住友化学工業株式会社 | エピタキシャル成長化合物半導体結晶 |
JP3156326B2 (ja) * | 1992-01-07 | 2001-04-16 | 富士通株式会社 | 半導体成長装置およびそれによる半導体成長方法 |
-
1995
- 1995-12-20 KR KR1019950052670A patent/KR0171376B1/ko not_active IP Right Cessation
-
1996
- 1996-09-16 US US08/716,646 patent/US5858818A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR0171376B1 (ko) | 1999-03-30 |
US5858818A (en) | 1999-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Yamamoto et al. | Metalorganic chemical vapor deposition growth of InN for InN/Si tandem solar cell | |
US4707216A (en) | Semiconductor deposition method and device | |
KR920015514A (ko) | 질화갈륨계 화합물 반도체의 결정성장방법 | |
WO1992013363A3 (en) | Light emitting diode bars and arrays and method of making same | |
CA2037198A1 (en) | Light-emitting semiconductor device using gallium nitride group compound | |
KR960036160A (ko) | 화합물 반도체 발광소자 및 그 제조 방법 | |
KR970068061A (ko) | 화합물 반도체의 기상 에피텍시 방법 | |
KR970051984A (ko) | 화합물 반도체의 에피텍시 성장방법 | |
Paloura et al. | Effect of doping on electron traps in metalorganic molecular‐beam epitaxial Ga x In1− x P/GaAs heterostructures | |
Bhat et al. | Atomic layer epitaxy grown heterojunction bipolar transistor having a carbon-doped base | |
Azoulay et al. | MOCVD n-type doping of GaAs and GaAlAs using silicon and selenium and fabrication of double heterostructure bipolar transistor | |
Jani et al. | Effect of phase separation on performance of III-V nitride solar cells | |
Hudait et al. | Comparative studies of Si-doped n-type MOVPE GaAs on Ge and GaAs substrates | |
Hsu et al. | Doping studies of Ga0. 5In0. 5P organometallic vapor‐phase epitaxy | |
Wu et al. | An overview of HgCdTe MBE technology | |
Rahman et al. | Silicon carbide turns on its power | |
Kocot et al. | Experimental verification of Cr2+ models of photoluminescent transitions in GaAs: Cr and AlxGa1− xAs: Cr single crystals | |
Beam et al. | Influence of dislocation density on IV characteristics of InP photodiodes | |
Song et al. | Iodine and arsenic doping of (1 0 0) HgCdTe/GaAs grown by metalorganic vapor phase epitaxy using isopropyl iodide and tris-dimethylaminoarsenic | |
Freundlich et al. | Very high peak current CBE grown InGaAs tunnel junction for InP/InGaAs tandem cells fabricated on InP, GaAs, and Si substrates | |
KR920021746A (ko) | 도우프된 결정 성장방법 | |
JPH06267867A (ja) | 化合物半導体の結晶成長法およびこれを用いたオーミックコンタクトの形成法 | |
Takeyasu et al. | MOCVD Growth of GaAs1-xPx (x= 0-1) and Fabrication of GaAs0. 6P0. 4 LED on Si Substrate | |
Cohen et al. | p‐and n‐type carbon doping of In x Ga1− x As y P1− y alloys lattice matched to InP | |
Somchai et al. | Molecular beam epitaxy growth of InP layers on GaAs substrates using GaP decomposition source |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20081001 Year of fee payment: 11 |
|
LAPS | Lapse due to unpaid annual fee |