KR970072478A - 질소 함유 반도체 재료를 사용하는 구성요소 - Google Patents

질소 함유 반도체 재료를 사용하는 구성요소 Download PDF

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KR970072478A
KR970072478A KR1019970011529A KR19970011529A KR970072478A KR 970072478 A KR970072478 A KR 970072478A KR 1019970011529 A KR1019970011529 A KR 1019970011529A KR 19970011529 A KR19970011529 A KR 19970011529A KR 970072478 A KR970072478 A KR 970072478A
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component
active layer
layer
indium
lattice constant
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KR1019970011529A
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헨닝 리헤르트
우베 슈트라우스
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로더리히 네테부쉬; 롤프 옴케
지멘스 악티엔게젤샤프트
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Publication of KR970072478A publication Critical patent/KR970072478A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Ⅲ-Ⅴ 반도체 재료로 만들어진 질화물 헤테로 구조체를 가지는 구성요소는 높은 인듐 함유량을 가지는 능동층 및 인듐 함유 버퍼층을 포함하고 상기 구성요소내에 격자 상수는 이 버퍼 층의 격자 상수에 의해 결정된다. 능동층 및 인접 반도체 재료 사이의 에너지 밴드 갭의 상승이 있다. 이런 층의 시퀸스는 기판(예를들어 사파이어 또는 SiC) 또는 매우 다른 격자 상수를 가지는 재료로 만들어진 반도체 층(예를들어 GaN, AlGaN 또는 AIN)에 성장된다. 상기 구성요소는 능동 충격자 구조의 단층이 허용오차 제한범위내에 남아있는 방식으로 종래 기판상의Ⅲ성분에서 인듐의 부분적으로 높은 비율을 가지는 능동 층을 생성하는 것을 가능하게 한다.

Description

질소 함유 반도체 재료를 사용하는 구성요소
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (7)

  1. a) Ⅲ-Ⅴ반도체 재료로 만들어지고, 방사전 생성 또는 전하 캐리어를 제어하기 위하여 제공된 능동층을 포함하고, 상기 능동층에서, 원소 주기표의 그룹 Ⅲ으로부터의 성분은 적어도 20%의 인듐 원자 비율을 포함하고, 원소 주기표의 그룹 V로부터의 성분은 질소를 포함하고, b) 기판 및 상기 능동층 사이의 그룹 Ⅲ-Ⅴ반도체 재료로 만들어진 버퍼 층을 포함하고, 상기 버퍼층에서, 원소 주기표의 그룹 Ⅲ으로부터의 성분은 인듐을 포함하고 원소 주기표의 그룹 V로부터의 성분은 질소를 포함하고, c) 상기 능동 층 반도체 재료의 성분은 반도체 재료의 경계에서 에너지 밴드갭의 변화가 발생하여, 기판에 면하는 측면상 능동 층에 인접하는 반도체 재료의 성분과 다르고, d) 상기 능동 층은 에피텍셜 성장을 위한 종래 온도에서 버퍼 층의 격자 상수에 대응하는 격자 상수를 가지는 기판 및 질화물 헤테로 구조체를 구비한 구성요소.
  2. 제1항에 있어서, 상기 능동층에서, 원소 주기표의 그룹 Ⅲ으로부터의 상기 성분은 적어도 50%의 인듐원자 비율을 포함하는 것을 특징으로 하는 구성요소.
  3. 제1항 또는 제2항에 있어서, 질화물 헤테로 구조체는 버퍼 층 능동층외에,Ⅲ-Ⅴ반도체 재료로 만들어진 적어도 하나의 추가 층을 포함하고, 원소 주기표의 그룹 Ⅲ으로부터의 성분은 인듐을 포함하고 원소 주기표의 그룹 V로부터의 성분은 질소를 포함하는 것을 특징으로 하는 구성요소.
  4. 제1항 내지 제3항 중 어느 한 항에 있어서, 기판 및 능동층 사이 임의의 인듐 함유층의 격자 상수는 기판 및 능동층 사이의 어떤 목표된 다른 인듐 함유 층의 격자 상수보다 대략 3% 큰 것을 특징으로 하는 구성요소.
  5. 제1항 내지 제4항 중 어느 한 항에 있어서, 상기 구성요소위에 성장된 상기 기판 또는 반도체 층은 GaN, AIGaN, AIN, 사파이어 및 SiC에 의해 형성된 그룹으로부터의 재료로 만들어지는 것을 특징으로 하는 구성요소.
  6. 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 기판 또는 반도체층은 능동층의 격자 상수의 적어도 2% 다른 격자 상수를 가지는 재료로 구성되는 것을 특징으로 하는 구성요소.
  7. 제1항 내지 제6항 중 어느 한 항에 있어서, 질화물 헤테로 구조체의 각 인듐 함유 층은 다양한 x 및 y를 가지는 합성물 InxGayAl1-X-y을 가지는 Ⅲ 성분을 구비하고 여기서 0〈x≤1 및 0≤y≤1-x인 것을 특징으로 하는 구성요소.
    ※참고사항: 최초출원 내용에 의하여 공개하는 것임.
KR1019970011529A 1996-04-02 1997-03-31 질소 함유 반도체 재료를 사용하는 구성요소 KR970072478A (ko)

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DE19613265.7 1996-04-02
DE19613265A DE19613265C1 (de) 1996-04-02 1996-04-02 Bauelement in stickstoffhaltigem Halbleitermaterial

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DE (1) DE19613265C1 (ko)
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US6316793B1 (en) * 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
US6233265B1 (en) * 1998-07-31 2001-05-15 Xerox Corporation AlGaInN LED and laser diode structures for pure blue or green emission
WO2000021143A1 (de) * 1998-10-05 2000-04-13 Osram Opto Semiconductors Gmbh & Co. Ohg Strahlungsemittierender halbleiterchip
JP3209270B2 (ja) 1999-01-29 2001-09-17 日本電気株式会社 ヘテロ接合電界効果トランジスタ
US6515313B1 (en) * 1999-12-02 2003-02-04 Cree Lighting Company High efficiency light emitters with reduced polarization-induced charges
JP3636976B2 (ja) * 2000-03-17 2005-04-06 日本電気株式会社 窒化物半導体素子およびその製造方法
US6727531B1 (en) * 2000-08-07 2004-04-27 Advanced Technology Materials, Inc. Indium gallium nitride channel high electron mobility transistors, and method of making the same
KR100773170B1 (ko) * 2000-09-12 2007-11-02 언액시스 인터내셔널 트레이딩 엘티디 반도체 칩을 장착하는 방법 및 장치
US6635904B2 (en) 2001-03-29 2003-10-21 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
US6489636B1 (en) 2001-03-29 2002-12-03 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
JP4745652B2 (ja) * 2004-11-30 2011-08-10 シャープ株式会社 半導体装置

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GB2250635B (en) * 1990-11-26 1994-09-28 Sharp Kk Electroluminescent device of compound semiconductor and process for fabricating the same
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TW334644B (en) 1998-06-21
EP0800214A1 (de) 1997-10-08
JPH1041230A (ja) 1998-02-13
DE19613265C1 (de) 1997-04-17

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