JP5259906B2 - 窒化ガリウムベースのhemt素子 - Google Patents
窒化ガリウムベースのhemt素子 Download PDFInfo
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- JP5259906B2 JP5259906B2 JP2002518532A JP2002518532A JP5259906B2 JP 5259906 B2 JP5259906 B2 JP 5259906B2 JP 2002518532 A JP2002518532 A JP 2002518532A JP 2002518532 A JP2002518532 A JP 2002518532A JP 5259906 B2 JP5259906 B2 JP 5259906B2
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- 229910002601 GaN Inorganic materials 0.000 title claims description 61
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 10
- 229910002704 AlGaN Inorganic materials 0.000 claims description 32
- 125000006850 spacer group Chemical group 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000956 alloy Substances 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Description
本発明は、the U.S.Army Space and Missile Defense Command、契約番号DASG60−98−C−0025の履行によってなされた。米国政府は、本発明に特定の権利を有する。
発明の分野
本発明は、高電子移動度トランジスタ(HEMT)素子、および同素子の製造方法に関する。
GaNベースの材料は、それらを高温、高出力および高周波素子用に魅力あるものにする物理的および電子的特性を有する。広いバンドギャップ半導体(GaNおよびSiC)は、以下の表1に示したように、SiおよびGaAsと比較して、本質的により低い熱キャリア発生率およびより高いブレークダウン電界を有する。
本発明は、その1つの態様において、InGaN合金から形成されたチャネル層を含む、窒化ガリウムベースのHEMT素子に関する。
本発明によれば、GaNベースのHEMTの性能が、素子のチャネル層中にInGaN合金を使用することによって改善される。
実施例2に示した設計のInGaN構造が、GaNの堆積に適した基板と、前記基板の上の緩衝層と、前記緩衝層の上の偶発的にドープされたInGaN層と、を含む。
実施例3に示された設計のHEMT構造は、GaNの堆積に適した基板と、前記基板の上に緩衝物として偶発的にドープされたGaN層と、GaN緩衝層およびInGaNチャネル層の異なった格子定数のために歪に対して緩和される前記GaN緩衝層の上の偶発的にドープされたInGaNチャネル層と、前記InGaNチャネル層の上の偶発的にドープされたGaNスペーサー層と、前記AlGaNスペーサー層の上の意図的にケイ素のドープされたGaNドナー層と、を含む。
実施例4に示された設計のHEMT構造は、GaNの堆積に適した基板と、前記基板の上に緩衝物として偶発的にドープされたGaN層と、GaN緩衝層およびInGaNチャネル層の異なった格子定数のために歪に対して緩和される前記GaN緩衝層の上の偶発的にドープされたInGaNチャネル層と、前記InGaNチャネル層の上のInGaNチャネル層に比較して低いInN濃度を有する偶発的にドープされたInGaNスペーサー層と、前記InGaNスペーサー層と同じInN濃度を有するInGaNスペーサー層の上の意図的にケイ素のドープされたInGaNドナー層と、を含む。この実施例において、帯電キャリアの高密度を含むチャネルが、InGaNチャネル層およびInGaNスペーサー層の異なったInN濃度に対応した歪の結果として圧電性によるドーピングのために、InGaNチャネル層とInGaNスペーサー層との間の境界面かその近くに形成される。
Claims (8)
- InGaN合金からなるチャネル層と前記チャネル層上に少なくとも一つの付加的な層を含む、窒化ガリウムベースのHEMT素子であって、前記チャネル層が緩和されかつ100〜5000ナノメートルの範囲の厚さを有し、アルミニウム含有層を含まず、前記少なくとも一つの付加的な層が(a)前記チャネル層と共にGaN/InGaNヘテロ構造を形成するGaN及び(b)前記チャネル層よりも低いIn濃度を有し、前記チャネル層と共にInGaN/InGaNヘテロ構造を形成する、InGaNからなる群より選ばれる材料を含む、素子。
- InGaN合金からなるチャネル層と前記チャネル層上に少なくとも一つの付加的な層を含む、窒化ガリウムベースのHEMT素子であって、前記少なくとも一つの付加的な層がAlxGa1-xN材料、ここでxは0.1である、を含み、前記チャネル層と共にAlGaN/InGaNヘテロ構造を形成し、前記チャネル層が緩和されかつ100〜5000ナノメートルの範囲の厚さを有する、素子。
- InGaN合金からなるチャネル層と前記チャネル層上に少なくとも一つの付加的な層を含む、窒化ガリウムベースのHEMT素子であって、前記少なくとも一つの付加的な層がGaN材料を含み前記チャンネル層と共にGaN/InGaNHEMTを形成し、前記チャネル層が緩和されかつ100〜5000ナノメートルの範囲の厚さを有し、アルミニウム含有層を含まない、素子。
- InGaN合金からなるチャネル層と前記チャネル層上に少なくとも一つの付加的な層を含む、窒化ガリウムベースのHEMT素子であって、前記少なくとも一つの付加的な層が前記チャネル層よりも低いIn濃度を有するInGaN材料を含み前記チャンネル層と共にInGaN/InGaNHEMTを形成し、前記チャネル層が緩和されかつ100〜5000ナノメートルの範囲の厚さを有し、アルミニウム含有層を含まない、素子。
- 前記少なくとも一つの付加的な層が、さらに、ドープされていないGaNスペーサー層と前記GaNスペーサー層上に形成されたドープされたGaNドナー層とを含む、請求項1又は3に記載の窒化ガリウムベースのHEMT素子。
- 前記少なくとも一つの付加的な層が、さらに、ドープされていないInGaNスペーサー層と前記InGaNスペーサー層上に形成されたドープされたInGaNドナー層とを含み、前記InGaNスペーサー層が前記チャンネル層よりも低いIn濃度を有する、請求項1又は4に記載の窒化ガリウムベースのHEMT素子。
- 前記Al x Ga 1-x N材料、ここでxは0.1である、を含む少なくとも一つの付加的な層が、ドープされていない、請求項2に記載の窒化ガリウムベースのHEMT素子。
- 基板と、
前記基板上のGaN緩衝層と、
をさらに含み、前記チャンネル層が前記緩衝層上に形成される、請求項1〜7のいずれか一項に記載の窒化ガリウムベースのHEMT素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/633,598 | 2000-08-07 | ||
US09/633,598 US6727531B1 (en) | 2000-08-07 | 2000-08-07 | Indium gallium nitride channel high electron mobility transistors, and method of making the same |
PCT/US2001/023052 WO2002013273A1 (en) | 2000-08-07 | 2001-07-23 | Indium gallium nitride channel high electron mobility transistors, and method of making the same |
Publications (3)
Publication Number | Publication Date |
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JP2004515909A JP2004515909A (ja) | 2004-05-27 |
JP2004515909A5 JP2004515909A5 (ja) | 2008-07-31 |
JP5259906B2 true JP5259906B2 (ja) | 2013-08-07 |
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Application Number | Title | Priority Date | Filing Date |
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JP2002518532A Expired - Lifetime JP5259906B2 (ja) | 2000-08-07 | 2001-07-23 | 窒化ガリウムベースのhemt素子 |
Country Status (6)
Country | Link |
---|---|
US (2) | US6727531B1 (ja) |
EP (1) | EP1314204A4 (ja) |
JP (1) | JP5259906B2 (ja) |
KR (1) | KR100863762B1 (ja) |
AU (1) | AU2001277077A1 (ja) |
WO (1) | WO2002013273A1 (ja) |
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JPH11261053A (ja) * | 1998-03-09 | 1999-09-24 | Furukawa Electric Co Ltd:The | 高移動度トランジスタ |
JP3369464B2 (ja) | 1998-03-19 | 2003-01-20 | 日本電信電話株式会社 | 半導体装置 |
JP3470054B2 (ja) * | 1998-12-28 | 2003-11-25 | シャープ株式会社 | 窒化物系iii−v族化合物半導体装置 |
JP4186032B2 (ja) | 2000-06-29 | 2008-11-26 | 日本電気株式会社 | 半導体装置 |
US6727531B1 (en) * | 2000-08-07 | 2004-04-27 | Advanced Technology Materials, Inc. | Indium gallium nitride channel high electron mobility transistors, and method of making the same |
-
2000
- 2000-08-07 US US09/633,598 patent/US6727531B1/en not_active Ceased
-
2001
- 2001-07-23 AU AU2001277077A patent/AU2001277077A1/en not_active Abandoned
- 2001-07-23 KR KR1020037001845A patent/KR100863762B1/ko active IP Right Grant
- 2001-07-23 WO PCT/US2001/023052 patent/WO2002013273A1/en active Application Filing
- 2001-07-23 EP EP01954857A patent/EP1314204A4/en not_active Withdrawn
- 2001-07-23 JP JP2002518532A patent/JP5259906B2/ja not_active Expired - Lifetime
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2005
- 2005-08-24 US US11/211,122 patent/USRE44538E1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6727531B1 (en) | 2004-04-27 |
AU2001277077A1 (en) | 2002-02-18 |
USRE44538E1 (en) | 2013-10-15 |
EP1314204A4 (en) | 2005-01-05 |
EP1314204A1 (en) | 2003-05-28 |
WO2002013273A1 (en) | 2002-02-14 |
KR100863762B1 (ko) | 2008-10-16 |
KR20030023742A (ko) | 2003-03-19 |
JP2004515909A (ja) | 2004-05-27 |
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