KR100863762B1 - 질화 인듐 갈륨 채널의 고전자 이동도 트랜지스터 및 그 제조 방법 - Google Patents
질화 인듐 갈륨 채널의 고전자 이동도 트랜지스터 및 그 제조 방법 Download PDFInfo
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- gallium nitride
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 76
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title description 7
- 229910052738 indium Inorganic materials 0.000 title description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title description 4
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 11
- 239000000956 alloy Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 6
- 230000005533 two-dimensional electron gas Effects 0.000 claims 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims 1
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 34
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Junction Field-Effect Transistors (AREA)
Abstract
Description
물성 | Si | GaAs | 4H-SiC | GaN |
대역(eV) | 1.1 | 1.4 | 3.3 | 3.4 |
브레이크다운 전기장(105V/cm) | 2 | 4 | 30 | 30? |
전자 이동도(㎠/Vs) | 1400 | 8500 | 800 | 900a, 2000b |
최대 속도(107cm/s) | 1 | 2 | 2 | 3 |
열전도도(W/cm K)` | 1.5 | 0.5 | 4.9 | 1.3 |
Claims (30)
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- InGaN 합금으로 형성된 채널층과 상기 채널층 위에 하나 이상의 추가층을 포함하는 질화 갈륨계 HEMT 소자로서,상기 채널층은 이완되며 100 내지 5000 나노미터의 두께를 가지는 것이고, 상기 하나 이상의 추가층은 GaN 및 InGaN으로 구성되는 군에서 선택되는 재료를 포함하는 것이고, 상기 하나 이상의 추가층의 각각의 층은 알루미늄을 포함하지 않는 것인 질화 갈륨계 HEMT 소자.
- InGaN 합금으로 형성된 채널층과 상기 채널층 위에 하나 이상의 추가층을 포함하는 질화 갈륨계 HEMT 소자로서,상기 채널층은 이완되며 100 내지 5000 나노미터의 두께를 가지는 것이고, 상기 하나 이상의 추가층은 AlxGa1-xN으로 형성되는 것이며, 상기 x는 0.2 이하인 것인 질화 갈륨계 HEMT 소자.
- InGaN 합금으로 형성된 채널층과 상기 채널층 위에 하나 이상의 추가층을 포함하는 질화 갈륨계 HEMT 소자로서,상기 채널층은 이완되며 100 내지 5000 나노미터의 두께를 가지는 것이고, 상기 하나 이상의 추가층은 상기 채널층과 함께 2차원 전자 가스를 형성하기 위해 배치된 GaN 재료를 포함하는 것인 질화 갈륨계 HEMT 소자.
- InGaN 합금으로 형성된 채널층과 상기 채널층 위에 하나 이상의 추가층을 포함하는 질화 갈륨계 HEMT 소자로서,상기 채널층은 이완되며 100 내지 5000 나노미터의 두께를 가지는 것이고, 상기 하나 이상의 추가층은 상기 채널층과 함께 2차원 전자 가스를 형성하기 위해 배치된 InGaN 재료를 포함하는 것인 질화 갈륨계 HEMT 소자.
- 청구항 19 또는 21에 있어서, 상기 하나 이상의 추가층은 GaN 재료를 포함하여 채널층과 함께 GaN/InGaN HEMT를 형성하는 것인 질화 갈륨계 HEMT 소자.
- 청구항 19 또는 22에 있어서, 상기 하나 이상의 추가층은 InGaN 재료를 포함하여 채널층과 함께 GaN/InGaN HEMT를 형성하는 것인 질화 갈륨계 HEMT 소자.
- 청구항 19 또는 21에 있어서, 상기 하나 이상의 추가층은 도핑되지 않은(undoped) GaN 공간층과 상기 GaN 공간층 위에 형성된 도핑된 GaN 도너층을 더 포함하는 것인 질화 갈륨계 HEMT 소자.
- 청구항 19 또는 22에 있어서, 상기 하나 이상의 추가층은 도핑되지 않은 InGaN 공간층과 상기 GaN 공간층 위에 형성된 도핑된 InGaN 도너층을 더 포함하는 것이고, 상기 InGaN 공간층은 상기 채널층보다 In 농도가 낮은 것인 질화 갈륨계 HEMT 소자.
- 청구항 19 내지 22 중 어느 한 항에 있어서, 상기 채널층은 200 내지 2000 나노미터의 두께를 갖는 것인 질화 갈륨계 HEMT 소자.
- 청구항 19 내지 22 중 어느 한 항에 있어서, 상기 채널층은 400 내지 1000 나노미터의 두께를 갖는 것인 질화 갈륨계 HEMT 소자.
- 청구항 19 내지 22 중 어느 한 항에 있어서, 기판과 상기 기판 위의 GaN 버퍼층을 더 포함하고, 상기 채널층은 상기 버퍼층 상에 형성되는 것인 질화 갈륨계 HEMT 소자.
- 청구항 20에 있어서, 상기 x는 0.1 내지 0.2인 것인 질화 갈륨계 HEMT 소자.
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US09/633,598 US6727531B1 (en) | 2000-08-07 | 2000-08-07 | Indium gallium nitride channel high electron mobility transistors, and method of making the same |
US09/633,598 | 2000-08-07 | ||
PCT/US2001/023052 WO2002013273A1 (en) | 2000-08-07 | 2001-07-23 | Indium gallium nitride channel high electron mobility transistors, and method of making the same |
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KR20030023742A KR20030023742A (ko) | 2003-03-19 |
KR100863762B1 true KR100863762B1 (ko) | 2008-10-16 |
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EP (1) | EP1314204A4 (ko) |
JP (1) | JP5259906B2 (ko) |
KR (1) | KR100863762B1 (ko) |
AU (1) | AU2001277077A1 (ko) |
WO (1) | WO2002013273A1 (ko) |
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KR100571071B1 (ko) * | 1996-12-04 | 2006-06-21 | 소니 가부시끼 가이샤 | 전계효과트랜지스터및그제조방법 |
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2000
- 2000-08-07 US US09/633,598 patent/US6727531B1/en not_active Ceased
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2001
- 2001-07-23 JP JP2002518532A patent/JP5259906B2/ja not_active Expired - Lifetime
- 2001-07-23 EP EP01954857A patent/EP1314204A4/en not_active Withdrawn
- 2001-07-23 WO PCT/US2001/023052 patent/WO2002013273A1/en active Application Filing
- 2001-07-23 AU AU2001277077A patent/AU2001277077A1/en not_active Abandoned
- 2001-07-23 KR KR1020037001845A patent/KR100863762B1/ko active IP Right Grant
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2005
- 2005-08-24 US US11/211,122 patent/USRE44538E1/en not_active Expired - Lifetime
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US6172382B1 (en) | 1997-01-09 | 2001-01-09 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting and light-receiving devices |
JPH11274474A (ja) * | 1998-03-19 | 1999-10-08 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置 |
Also Published As
Publication number | Publication date |
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JP2004515909A (ja) | 2004-05-27 |
WO2002013273A1 (en) | 2002-02-14 |
KR20030023742A (ko) | 2003-03-19 |
USRE44538E1 (en) | 2013-10-15 |
EP1314204A4 (en) | 2005-01-05 |
EP1314204A1 (en) | 2003-05-28 |
US6727531B1 (en) | 2004-04-27 |
JP5259906B2 (ja) | 2013-08-07 |
AU2001277077A1 (en) | 2002-02-18 |
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