JP2003077840A5 - - Google Patents
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- JP2003077840A5 JP2003077840A5 JP2001263610A JP2001263610A JP2003077840A5 JP 2003077840 A5 JP2003077840 A5 JP 2003077840A5 JP 2001263610 A JP2001263610 A JP 2001263610A JP 2001263610 A JP2001263610 A JP 2001263610A JP 2003077840 A5 JP2003077840 A5 JP 2003077840A5
- Authority
- JP
- Japan
- Prior art keywords
- iii
- lattice constant
- lattice
- semiconductor
- buffer layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001263610A JP3782328B2 (ja) | 2001-08-31 | 2001-08-31 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001263610A JP3782328B2 (ja) | 2001-08-31 | 2001-08-31 | 半導体装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006033273A Division JP4769094B2 (ja) | 2006-02-10 | 2006-02-10 | 半導体装置及びその製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2003077840A JP2003077840A (ja) | 2003-03-14 |
JP2003077840A5 true JP2003077840A5 (ko) | 2005-04-07 |
JP3782328B2 JP3782328B2 (ja) | 2006-06-07 |
Family
ID=19090338
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001263610A Expired - Lifetime JP3782328B2 (ja) | 2001-08-31 | 2001-08-31 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3782328B2 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9524869B2 (en) | 2004-03-11 | 2016-12-20 | Epistar Corporation | Nitride-based semiconductor light-emitting device |
US8562738B2 (en) | 2004-03-11 | 2013-10-22 | Epistar Corporation | Nitride-based light-emitting device |
US7928424B2 (en) * | 2004-03-11 | 2011-04-19 | Epistar Corporation | Nitride-based light-emitting device |
US8334155B2 (en) * | 2005-09-27 | 2012-12-18 | Philips Lumileds Lighting Company Llc | Substrate for growing a III-V light emitting device |
JP2012054424A (ja) * | 2010-09-01 | 2012-03-15 | Koji Tomita | 太陽電池及びその製造方法 |
EP2973667A4 (en) * | 2013-03-14 | 2017-01-18 | King Abdullah University Of Science And Technology | Defect free single crystal thin layer |
JP6923900B2 (ja) * | 2017-02-24 | 2021-08-25 | 国立大学法人豊橋技術科学大学 | 希薄窒化物犠牲層を用いた化合物半導体薄膜の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3005281B2 (ja) * | 1990-11-24 | 2000-01-31 | 京セラ株式会社 | 半導体素子の製造方法 |
JP3474917B2 (ja) * | 1994-04-08 | 2003-12-08 | 日本オプネクスト株式会社 | 半導体装置の製造方法 |
JPH10326749A (ja) * | 1997-03-28 | 1998-12-08 | Sharp Corp | 化合物半導体の製造方法 |
JP2000049104A (ja) * | 1998-05-29 | 2000-02-18 | Sharp Corp | 化合物半導体の結晶成長方法及び化合物半導体装置 |
JP2000031591A (ja) * | 1998-07-08 | 2000-01-28 | Toshiba Corp | 半導体発光素子 |
-
2001
- 2001-08-31 JP JP2001263610A patent/JP3782328B2/ja not_active Expired - Lifetime
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