JP4769094B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP4769094B2 JP4769094B2 JP2006033273A JP2006033273A JP4769094B2 JP 4769094 B2 JP4769094 B2 JP 4769094B2 JP 2006033273 A JP2006033273 A JP 2006033273A JP 2006033273 A JP2006033273 A JP 2006033273A JP 4769094 B2 JP4769094 B2 JP 4769094B2
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Description
2:GaPバッファ層
3:III −V−N半導体層
43、44:シリコン半導体層
Claims (2)
- シリコン単結晶基板と、
前記シリコン単結晶基板上に、その臨界膜厚以下の厚さに形成されたGaPバッファ層と、
前記GaPバッファ層上に形成され、シリコン単結晶に実質的に格子整合するように、窒素(N)をV族元素に対して1%〜10%添加したIII −V族化合物半導体であるGaP 1-X N X (xは0.01〜0.10)、窒素(N)をV族元素に対して1%〜3%添加したIII −V族化合物半導体であるAl y Ga 1-y P 1-z N z (zは0.01〜0.03)、又は、窒素(N)をV族元素に対して1%〜3%添加したIII −V族化合物半導体であるGa(As y P 1-y ) 1-z N z (zは0.01〜0.03)からなる複数の半導体層とを有する
ことを特徴とする半導体装置。 - シリコン単結晶基板上に、前記シリコン単結晶基板を第1の基板温度に加熱しながら、その臨界膜厚以下の厚さのGaPバッファ層をMEE法により形成し、
前記GaPバッファ層上に、前記シリコン単結晶基板を前記第1の基板温度よりも高い第2の基板温度に加熱しながら、MBE法により、シリコン単結晶に実質的に格子整合するように、窒素(N)をV族元素に対して1%〜10%添加したIII −V族化合物半導体であるGaP 1-X N X (xは0.01〜0.10)、窒素(N)をV族元素に対して1%〜3%添加したIII −V族化合物半導体であるAl y Ga 1-y P 1-z N z (zは0.01〜0.03)、又は、窒素(N)をV族元素に対して1%〜3%添加したIII −V族化合物半導体であるGa(As y P 1-y ) 1-z N z (zは0.01〜0.03)からなる複数の半導体層を形成する
ことを特徴とする半導体装置の製造方法。
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JP2006033273A JP4769094B2 (ja) | 2006-02-10 | 2006-02-10 | 半導体装置及びその製造方法 |
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JP2006033273A JP4769094B2 (ja) | 2006-02-10 | 2006-02-10 | 半導体装置及びその製造方法 |
Related Parent Applications (1)
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JP2001263610A Division JP3782328B2 (ja) | 2001-08-31 | 2001-08-31 | 半導体装置 |
Publications (2)
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JP2006216968A JP2006216968A (ja) | 2006-08-17 |
JP4769094B2 true JP4769094B2 (ja) | 2011-09-07 |
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JP2006033273A Expired - Fee Related JP4769094B2 (ja) | 2006-02-10 | 2006-02-10 | 半導体装置及びその製造方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102011016366B4 (de) * | 2011-04-07 | 2018-09-06 | Nasp Iii/V Gmbh | III/V-Si-Template, dessen Verwendung und Verfahren zu dessen Herstellung |
US9595438B2 (en) | 2011-09-12 | 2017-03-14 | Nasp Iii/V Gmbh | Method for producing a III/V Si template |
US8951827B2 (en) | 2012-06-22 | 2015-02-10 | Epiworks, Inc. | Manufacturing semiconductor-based multi-junction photovoltaic devices |
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- 2006-02-10 JP JP2006033273A patent/JP4769094B2/ja not_active Expired - Fee Related
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