KR920010462B1 - 다이내믹 ram 및 그 제조방법 - Google Patents

다이내믹 ram 및 그 제조방법 Download PDF

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Publication number
KR920010462B1
KR920010462B1 KR1019890014127A KR890014127A KR920010462B1 KR 920010462 B1 KR920010462 B1 KR 920010462B1 KR 1019890014127 A KR1019890014127 A KR 1019890014127A KR 890014127 A KR890014127 A KR 890014127A KR 920010462 B1 KR920010462 B1 KR 920010462B1
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KR
South Korea
Prior art keywords
electrode
insulating film
capacitor
mos transistor
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019890014127A
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English (en)
Korean (ko)
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KR900005597A (ko
Inventor
가츠히코 히에다
아키히로 나타야마
후미오 호리구치
Original Assignee
가부시키가이샤 도시바
아오이 죠이치
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 가부시키가이샤 도시바, 아오이 죠이치 filed Critical 가부시키가이샤 도시바
Publication of KR900005597A publication Critical patent/KR900005597A/ko
Application granted granted Critical
Publication of KR920010462B1 publication Critical patent/KR920010462B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0147—Manufacturing their gate sidewall spacers

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019890014127A 1988-09-30 1989-09-30 다이내믹 ram 및 그 제조방법 Expired KR920010462B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63-243871 1988-09-30
JP63243871A JPH0294471A (ja) 1988-09-30 1988-09-30 半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
KR900005597A KR900005597A (ko) 1990-04-14
KR920010462B1 true KR920010462B1 (ko) 1992-11-28

Family

ID=17110218

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890014127A Expired KR920010462B1 (ko) 1988-09-30 1989-09-30 다이내믹 ram 및 그 제조방법

Country Status (4)

Country Link
US (1) US5138412A (enExample)
JP (1) JPH0294471A (enExample)
KR (1) KR920010462B1 (enExample)
DE (1) DE3929129A1 (enExample)

Families Citing this family (40)

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JPH02304968A (ja) * 1989-05-19 1990-12-18 Oki Electric Ind Co Ltd 半導体記憶装置及びその製造方法
KR940005729B1 (ko) * 1989-06-13 1994-06-23 삼성전자 주식회사 디램셀의 제조방법 및 구조
JP2524842B2 (ja) * 1989-11-08 1996-08-14 三菱電機株式会社 半導体記憶装置
KR930005741B1 (ko) * 1990-11-01 1993-06-24 삼성전자 주식회사 터널구조의 디램 셀 및 그의 제조방법
US5217914A (en) * 1990-04-10 1993-06-08 Matsushita Electric Industrial Co., Ltd. Method for making semiconductor integration circuit with stacked capacitor cells
JPH03296262A (ja) * 1990-04-13 1991-12-26 Mitsubishi Electric Corp 半導体メモリセル
EP0463741B1 (en) * 1990-05-31 1997-07-23 Canon Kabushiki Kaisha Method of manufacturing a semiconductor memory device containing a capacitor
KR920009748B1 (ko) * 1990-05-31 1992-10-22 삼성전자 주식회사 적층형 캐패시터셀의 구조 및 제조방법
KR920001716A (ko) * 1990-06-05 1992-01-30 김광호 디램셀의 적층형 캐패시터의 구조 및 제조방법
KR930007194B1 (ko) * 1990-08-14 1993-07-31 삼성전자 주식회사 반도체 장치 및 그 제조방법
JP2599495B2 (ja) * 1990-09-05 1997-04-09 シャープ株式会社 半導体装置の製造方法
JP2601022B2 (ja) * 1990-11-30 1997-04-16 日本電気株式会社 半導体装置の製造方法
JP3126739B2 (ja) * 1990-12-06 2001-01-22 三菱電機株式会社 半導体記憶装置およびその製造方法
US5108943A (en) * 1991-01-02 1992-04-28 Micron Technology, Inc. Mushroom double stacked capacitor
US5202278A (en) * 1991-09-10 1993-04-13 Micron Technology, Inc. Method of forming a capacitor in semiconductor wafer processing
JP2905642B2 (ja) * 1992-01-18 1999-06-14 三菱電機株式会社 半導体装置およびその製造方法
US5206183A (en) * 1992-02-19 1993-04-27 Micron Technology, Inc. Method of forming a bit line over capacitor array of memory cells
DE4221433A1 (de) * 1992-06-30 1994-01-05 Siemens Ag Halbleiterspeicheranordnung und Verfahren zu ihrer Herstellung
WO1994003898A1 (de) * 1992-08-10 1994-02-17 Siemens Aktiengesellschaft Dram-zellenanordnung
US5864181A (en) 1993-09-15 1999-01-26 Micron Technology, Inc. Bi-level digit line architecture for high density DRAMs
JPH07161832A (ja) * 1993-12-08 1995-06-23 Oki Electric Ind Co Ltd 半導体記憶装置およびその製造方法
JPH0888335A (ja) * 1994-09-20 1996-04-02 Mitsubishi Electric Corp 半導体記憶装置
JP2797994B2 (ja) * 1995-02-17 1998-09-17 ヤマハ株式会社 半導体装置
US6043562A (en) 1996-01-26 2000-03-28 Micron Technology, Inc. Digit line architecture for dynamic memory
FR2752336B1 (fr) * 1996-08-09 1999-05-14 Sgs Thomson Microelectronics Condensateur dans un circuit integre
US5712813A (en) * 1996-10-17 1998-01-27 Zhang; Guobiao Multi-level storage capacitor structure with improved memory density
JP3749776B2 (ja) * 1997-02-28 2006-03-01 株式会社東芝 半導体装置
US5851875A (en) * 1997-07-14 1998-12-22 Micron Technology, Inc. Process for forming capacitor array structure for semiconductor devices
US5858829A (en) * 1998-06-29 1999-01-12 Vanguard International Semiconductor Corporation Method for fabricating dynamic random access memory (DRAM) cells with minimum active cell areas using sidewall-spacer bit lines
US6303956B1 (en) 1999-02-26 2001-10-16 Micron Technology, Inc. Conductive container structures having a dielectric cap
JP2001077327A (ja) 1999-09-02 2001-03-23 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
US6232168B1 (en) * 2000-08-25 2001-05-15 Micron Technology, Inc. Memory circuitry and method of forming memory circuitry
US6376380B1 (en) 2000-08-30 2002-04-23 Micron Technology, Inc. Method of forming memory circuitry and method of forming memory circuitry comprising a buried bit line array of memory cells
KR100389032B1 (ko) * 2000-11-21 2003-06-25 삼성전자주식회사 강유전체 메모리 장치 및 그의 제조 방법
US6706608B2 (en) * 2001-02-28 2004-03-16 Micron Technology, Inc. Memory cell capacitors having an over/under configuration
US6423609B1 (en) 2001-05-18 2002-07-23 Micron Technology, Inc. Methods of forming capacitors on a wafer, photolithographic methods of forming capacitors on a wafer, and semiconductor wafer
JP2003152105A (ja) * 2001-11-15 2003-05-23 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6962840B2 (en) * 2002-09-11 2005-11-08 Samsung Electronics Co., Ltd. Method of forming MOS transistor
JP3944455B2 (ja) * 2003-01-31 2007-07-11 松下電器産業株式会社 半導体装置及びその製造方法
US8084841B2 (en) * 2009-05-05 2011-12-27 Georgia Tech Research Systems and methods for providing high-density capacitors

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL173572C (nl) * 1976-02-12 1984-02-01 Philips Nv Halfgeleiderinrichting.
JPS568871A (en) * 1979-07-04 1981-01-29 Mitsubishi Electric Corp Semiconductor memory device
JPS59104161A (ja) * 1982-12-07 1984-06-15 Nec Corp １トランジスタ型半導体記憶装置
ATE41267T1 (de) * 1984-04-25 1989-03-15 Siemens Ag Ein-transistor-speicherzelle fuer hochintegrierte dynamische halbleiterspeicher und verfahren zu ihrer herstellung.
EP0194682B1 (en) * 1985-03-13 1991-01-23 Kabushiki Kaisha Toshiba Semiconductor memory device
JPH0682783B2 (ja) * 1985-03-29 1994-10-19 三菱電機株式会社 容量およびその製造方法
JPH0746700B2 (ja) * 1986-02-18 1995-05-17 松下電子工業株式会社 １トランジスタ型ｄｒａｍ装置
JPS6395657A (ja) * 1986-10-09 1988-04-26 Mitsubishi Electric Corp 半導体記憶装置
JPS63146461A (ja) * 1986-12-10 1988-06-18 Mitsubishi Electric Corp 半導体記憶装置
JP2659723B2 (ja) * 1987-09-19 1997-09-30 株式会社日立製作所 半導体集積回路装置
JPS6479963A (en) * 1987-09-21 1989-03-24 Otani Denki Kk Tape traveling device
JP2755591B2 (ja) * 1988-03-25 1998-05-20 株式会社東芝 半導体記憶装置
US5053351A (en) * 1991-03-19 1991-10-01 Micron Technology, Inc. Method of making stacked E-cell capacitor DRAM cell

Also Published As

Publication number Publication date
KR900005597A (ko) 1990-04-14
US5138412A (en) 1992-08-11
JPH0294471A (ja) 1990-04-05
DE3929129C2 (enExample) 1992-02-20
DE3929129A1 (de) 1990-04-05

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