KR890017807A - 반도체 집적회로의 출력회로 - Google Patents

반도체 집적회로의 출력회로 Download PDF

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Publication number
KR890017807A
KR890017807A KR1019890005909A KR890005909A KR890017807A KR 890017807 A KR890017807 A KR 890017807A KR 1019890005909 A KR1019890005909 A KR 1019890005909A KR 890005909 A KR890005909 A KR 890005909A KR 890017807 A KR890017807 A KR 890017807A
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KR
South Korea
Prior art keywords
output
circuit
semiconductor integrated
integrated circuit
delay means
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KR1019890005909A
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English (en)
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KR930000970B1 (ko
Inventor
후미나리 다나카
사토시 노나카
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
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Publication of KR890017807A publication Critical patent/KR890017807A/ko
Application granted granted Critical
Publication of KR930000970B1 publication Critical patent/KR930000970B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H03K17/164—Soft switching using parallel switching arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
    • H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

내용 없음

Description

반도체 집적회로의 출력회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 1실시예에 따른 반도체집적회로의 출력회로의 구성을 나타낸 회로도. 제 4 도는 본 발명의 다른 실시예의 구성을 나타낸 회로도. 제 5 도는 본 발명의 또 다른 실시예의 구성을 나타낸 회로도.

Claims (3)

  1. 부하전류구동능력이 서로 다른 복수의 출력트랜지스터(2o~2n,3o~3n,)와, 이들 각 출력트랜지스터 (2o~2n,3o~3n)를 구동시키기 위한 신호를 서로 다른 기간만큼 지연시키는 복수의 신호지연수단을 구비하고, 상기 복수의 신호지연수단중 큰 지연시간을 갖는 신호지연수단의 지연신호에 의해 구동되는 출력트랜지스터의 부하전류구동능력보다 크게 되도록 구성된 것을 특징으로 하는 반도체 집적회로의 출력회로.
  2. 제 1 항에 있어서, 상기 복수의 출력트랜지스터(2o~2n,3o~3n)가 그 부하전류구동능력이 크게 되는 순서도 신호의 지연시간이 길어지는 상기 복수의 신호지연수단의 출력에 의해 선택적으로 구동되도록 구성된 것을 특징으로 하는 반도체 집적회로의 출력회로.
  3. 제 1 항에 있어서, 상기 복수의 각 신호지연수단이 폴리실리콘으로 구성된 저항소자(4o~4n,5o~5n)와 상기 출력트랜지스터(2o~2n,3o~3n)의 입력용량으로 이루어진 시정수(RC)회로로 구성된 것을 특징으로 하는 반도체 집적회로의 출력회로
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890005909A 1988-05-02 1989-05-02 반도체 집적회로의 출력회로 KR930000970B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP88-109312 1988-05-02
JP88-109311 1988-05-02
JP63109312A JPH01279631A (ja) 1988-05-02 1988-05-02 半導体集積回路の出力回路

Publications (2)

Publication Number Publication Date
KR890017807A true KR890017807A (ko) 1989-12-18
KR930000970B1 KR930000970B1 (ko) 1993-02-11

Family

ID=14507016

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890005909A KR930000970B1 (ko) 1988-05-02 1989-05-02 반도체 집적회로의 출력회로

Country Status (5)

Country Link
US (1) US5128567A (ko)
EP (1) EP0340731B1 (ko)
JP (1) JPH01279631A (ko)
KR (1) KR930000970B1 (ko)
DE (1) DE68912640T2 (ko)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3722788A1 (de) * 1987-07-10 1989-01-19 Bayer Ag Chirale 6-hydroxymethylenverzweigte 3-amino-4,5-dihydroxypiperidine, zwischenprodukte zu ihrer herstellung, verfahren zu ihrer herstellung und ihre verwendung
US5231311A (en) * 1989-02-28 1993-07-27 Vlsi Technology, Inc. Digital output buffer and method with slew rate control and reduced crowbar current
US5109166A (en) * 1990-04-30 1992-04-28 International Business Machines Corporation Sinusoidal signal generator
JP2616204B2 (ja) * 1990-10-24 1997-06-04 日本電気株式会社 出力バッファ回路
JPH04165669A (ja) * 1990-10-29 1992-06-11 Mitsubishi Denki Eng Kk 集積化ｃｍｏｓ出力回路
JPH04248192A (ja) * 1991-01-23 1992-09-03 Nec Ic Microcomput Syst Ltd 半導体記憶装置の出力回路
JPH0555881A (ja) * 1991-08-27 1993-03-05 Toshiba Corp 遅延回路
DE4200680A1 (de) * 1992-01-14 1993-07-15 Bosch Gmbh Robert Treiberschaltung
US5287021A (en) * 1992-05-06 1994-02-15 Motorola, Inc. Low noise BICMOS circuit
JPH06261386A (ja) * 1993-03-05 1994-09-16 Pioneer Electron Corp ミューティング制御回路
JP4467622B2 (ja) * 1993-11-17 2010-05-26 株式会社ルネサステクノロジ 出力回路
US5694063A (en) * 1994-08-11 1997-12-02 Ltx Corporation High speed IDDQ monitor circuit
US5552744A (en) * 1994-08-11 1996-09-03 Ltx Corporation High speed IDDQ monitor circuit
US5838177A (en) * 1997-01-06 1998-11-17 Micron Technology, Inc. Adjustable output driver circuit having parallel pull-up and pull-down elements
JPH10290147A (ja) * 1997-04-14 1998-10-27 Mitsubishi Electric Corp 遅延量可変回路
US6429633B1 (en) 1998-08-28 2002-08-06 Matsushita Electric Industrial Co., Ltd. Switching regulator and LSI system
US6177818B1 (en) 1999-04-30 2001-01-23 International Business Machines Corporation Complementary depletion switch body stack off-chip driver
US6564173B1 (en) * 2000-10-17 2003-05-13 Daimlerchrysler Corporation Remote multiplexed diagnostic circuitry and a method of detecting faults in sequentially driven loads
US6525569B1 (en) * 2001-09-21 2003-02-25 International Business Machines Corporation Driver circuit having shapable transition waveforms
JP2004104940A (ja) * 2002-09-11 2004-04-02 Nidec Copal Corp モータ駆動装置
DE10355509A1 (de) * 2003-11-27 2005-07-07 Infineon Technologies Ag Schaltung und Verfahren zum verzögerten Einschalten einer elektrischen Last
DE10358276A1 (de) * 2003-12-11 2005-07-21 Conti Temic Microelectronic Gmbh Verfahren und Schaltungsanordnung zur Ansteuerung eines Lastelements mittels eines elektronischen Schaltelements im Laststromkreis
US7061301B2 (en) 2003-12-19 2006-06-13 Power Integrations, Inc. Method and apparatus switching a semiconductor switch with a multi-state drive circuit
JP2007013916A (ja) * 2005-05-30 2007-01-18 Denso Corp 信号生成装置
FR2900003A1 (fr) * 2006-04-13 2007-10-19 St Microelectronics Sa Circuit tampon comprenant des moyens de controle de la pente du signal de sortie
JPWO2009041010A1 (ja) * 2007-09-27 2011-01-13 パナソニック株式会社 半導体集積回路装置、通信装置、情報再生装置、画像表示装置、電子装置、電子制御装置および移動体
KR100880924B1 (ko) * 2007-12-20 2009-02-04 주식회사 하이닉스반도체 직류 대 직류 전압 변환 장치
CN102422537B (zh) 2009-05-11 2014-11-26 Pi公司 用于增强模式和耗尽模式宽带隙半导体jfet的栅驱动器
US10483973B2 (en) 2017-12-06 2019-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Temperature instability-aware circuit
US10505579B2 (en) * 2018-02-02 2019-12-10 Samsung Electro-Mechanics Co., Ltd. Radio frequency switching device for fast switching operation

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60141020A (ja) * 1983-12-28 1985-07-26 Nec Corp Ｃｍｏｓ論理回路
US4700089A (en) * 1984-08-23 1987-10-13 Fujitsu Limited Delay circuit for gate-array LSI
JPS6214520A (ja) * 1985-07-12 1987-01-23 Sony Corp メモリの出力バツフア回路
US4719369A (en) * 1985-08-14 1988-01-12 Hitachi, Ltd. Output circuit having transistor monitor for matching output impedance to load impedance
JPS6248806A (ja) * 1985-08-28 1987-03-03 Nec Corp 出力回路
EP0253914A1 (de) * 1986-07-23 1988-01-27 Deutsche ITT Industries GmbH Isolierschicht-Feldeffekttransistor-Gegentakttreiberstufe mit Kompensierung von Betriebsparameterschwankungen und Fertigungsstreuungen
US4725747A (en) * 1986-08-29 1988-02-16 Texas Instruments Incorporated Integrated circuit distributed geometry to reduce switching noise
US4789793A (en) * 1987-02-24 1988-12-06 Texas Instruments Incorporated Integrated FET circuit to reduce switching noise
JP2633562B2 (ja) * 1987-05-27 1997-07-23 株式会社東芝 半導体集積回路
JPS63299513A (ja) * 1987-05-29 1988-12-07 Toshiba Corp 出力回路
US4820942A (en) * 1988-01-27 1989-04-11 Advanced Micro Devices, Inc. High-speed, high-drive output buffer circuits with reduced ground bounce

Also Published As

Publication number Publication date
JPH01279631A (ja) 1989-11-09
KR930000970B1 (ko) 1993-02-11
US5128567A (en) 1992-07-07
DE68912640D1 (de) 1994-03-10
EP0340731A3 (en) 1990-05-23
EP0340731B1 (en) 1994-01-26
DE68912640T2 (de) 1994-05-11
EP0340731A2 (en) 1989-11-08

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