KR20140016903A - 원격으로-여기된 불소 및 수증기 식각 - Google Patents

원격으로-여기된 불소 및 수증기 식각 Download PDF

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Publication number
KR20140016903A
KR20140016903A KR1020137024374A KR20137024374A KR20140016903A KR 20140016903 A KR20140016903 A KR 20140016903A KR 1020137024374 A KR1020137024374 A KR 1020137024374A KR 20137024374 A KR20137024374 A KR 20137024374A KR 20140016903 A KR20140016903 A KR 20140016903A
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South Korea
Prior art keywords
etching
region
plasma
substrate
substrate processing
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Ceased
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KR1020137024374A
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English (en)
Korean (ko)
Inventor
징춘 장
안추안 왕
니틴 케이. 잉글
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20140016903A publication Critical patent/KR20140016903A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020137024374A 2011-02-22 2012-01-31 원격으로-여기된 불소 및 수증기 식각 Ceased KR20140016903A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161445295P 2011-02-22 2011-02-22
US61/445,295 2011-02-22
US13/232,079 2011-09-14
US13/232,079 US8771539B2 (en) 2011-02-22 2011-09-14 Remotely-excited fluorine and water vapor etch
PCT/US2012/023356 WO2012115750A2 (en) 2011-02-22 2012-01-31 Remotely-excited fluorine and water vapor etch

Related Child Applications (1)

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KR1020157026188A Division KR101592850B1 (ko) 2011-02-22 2012-01-31 원격으로-여기된 불소 및 수증기 식각

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Publication Number Publication Date
KR20140016903A true KR20140016903A (ko) 2014-02-10

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KR1020137024374A Ceased KR20140016903A (ko) 2011-02-22 2012-01-31 원격으로-여기된 불소 및 수증기 식각
KR1020157026188A Active KR101592850B1 (ko) 2011-02-22 2012-01-31 원격으로-여기된 불소 및 수증기 식각

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Country Status (6)

Country Link
US (1) US8771539B2 (enExample)
JP (1) JP5844390B2 (enExample)
KR (2) KR20140016903A (enExample)
CN (1) CN103380485B (enExample)
TW (1) TWI528448B (enExample)
WO (1) WO2012115750A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160140884A (ko) * 2014-03-31 2016-12-07 어플라이드 머티어리얼스, 인코포레이티드 무-할로겐 기상 실리콘 에칭
KR20170017827A (ko) * 2015-08-07 2017-02-15 어플라이드 머티어리얼스, 인코포레이티드 산화물 에칭 선택성 시스템 및 방법
KR20200088218A (ko) * 2017-05-31 2020-07-22 어플라이드 머티어리얼스, 인코포레이티드 무수 식각 방법들

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US8771539B2 (en) 2014-07-08
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CN103380485B (zh) 2016-05-25
WO2012115750A3 (en) 2012-11-15
TWI528448B (zh) 2016-04-01
CN103380485A (zh) 2013-10-30
JP5844390B2 (ja) 2016-01-13
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