KR20040104959A - 도핑된 그룹 ⅲ-ⅴ 질화물 재료 및 이를 포함하는마이크로일렉트로닉 디바이스 및 디바이스 프리커서 구조물 - Google Patents

도핑된 그룹 ⅲ-ⅴ 질화물 재료 및 이를 포함하는마이크로일렉트로닉 디바이스 및 디바이스 프리커서 구조물 Download PDF

Info

Publication number
KR20040104959A
KR20040104959A KR10-2004-7015208A KR20047015208A KR20040104959A KR 20040104959 A KR20040104959 A KR 20040104959A KR 20047015208 A KR20047015208 A KR 20047015208A KR 20040104959 A KR20040104959 A KR 20040104959A
Authority
KR
South Korea
Prior art keywords
layer
delta
doped
nitride
device structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2004-7015208A
Other languages
English (en)
Korean (ko)
Inventor
플린제프리에스.
브란데스조지알.
Original Assignee
크리 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 크리 인코포레이티드 filed Critical 크리 인코포레이티드
Publication of KR20040104959A publication Critical patent/KR20040104959A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H10D30/4735—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material having delta-doped or planar-doped donor layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H10D62/605—Planar doped, e.g. atomic-plane doped or delta-doped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
KR10-2004-7015208A 2002-03-25 2003-03-19 도핑된 그룹 ⅲ-ⅴ 질화물 재료 및 이를 포함하는마이크로일렉트로닉 디바이스 및 디바이스 프리커서 구조물 Ceased KR20040104959A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/107,001 US7919791B2 (en) 2002-03-25 2002-03-25 Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
US10/107,001 2002-03-25
PCT/US2003/008355 WO2003083950A1 (en) 2002-03-25 2003-03-19 Doped group iii-v nitride materials, and microelectronic devices and device precursor structures comprising same

Publications (1)

Publication Number Publication Date
KR20040104959A true KR20040104959A (ko) 2004-12-13

Family

ID=28040971

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-7015208A Ceased KR20040104959A (ko) 2002-03-25 2003-03-19 도핑된 그룹 ⅲ-ⅴ 질화물 재료 및 이를 포함하는마이크로일렉트로닉 디바이스 및 디바이스 프리커서 구조물

Country Status (9)

Country Link
US (1) US7919791B2 (enExample)
EP (1) EP1488460B1 (enExample)
JP (1) JP4916090B2 (enExample)
KR (1) KR20040104959A (enExample)
CN (1) CN100375292C (enExample)
AU (1) AU2003224709A1 (enExample)
CA (1) CA2479657A1 (enExample)
TW (1) TW200306016A (enExample)
WO (1) WO2003083950A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100679235B1 (ko) * 2005-12-07 2007-02-06 한국전자통신연구원 반도체 발광소자 및 그 제조방법

Families Citing this family (180)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE538497T1 (de) 2002-04-30 2012-01-15 Cree Inc Hochspannungsschaltbauelemente und prozess zu ihrer herstellung
US7112830B2 (en) * 2002-11-25 2006-09-26 Apa Enterprises, Inc. Super lattice modification of overlying transistor
JP4469139B2 (ja) * 2003-04-28 2010-05-26 シャープ株式会社 化合物半導体ｆｅｔ
KR100616516B1 (ko) * 2003-12-18 2006-08-29 삼성전기주식회사 질화갈륨계 반도체 발광소자 및 그 제조방법
US20050133816A1 (en) * 2003-12-19 2005-06-23 Zhaoyang Fan III-nitride quantum-well field effect transistors
JP4801325B2 (ja) * 2004-04-08 2011-10-26 パナソニック株式会社 Ｉｉｉ−ｖ族窒化物半導体を用いた半導体装置
US7514759B1 (en) * 2004-04-19 2009-04-07 Hrl Laboratories, Llc Piezoelectric MEMS integration with GaN technology
JP4682541B2 (ja) * 2004-06-15 2011-05-11 豊田合成株式会社 半導体の結晶成長方法
KR100616619B1 (ko) * 2004-09-08 2006-08-28 삼성전기주식회사 질화물계 이종접합 전계효과 트랜지스터
WO2006039341A2 (en) * 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
CN101390214A (zh) * 2004-10-08 2009-03-18 加利福尼亚大学董事会 高效发光二极管
GB0424957D0 (en) * 2004-11-11 2004-12-15 Btg Int Ltd Methods for fabricating semiconductor devices and devices fabricated thereby
JP2006190988A (ja) * 2004-12-06 2006-07-20 Matsushita Electric Ind Co Ltd 半導体装置
KR100662191B1 (ko) 2004-12-23 2006-12-27 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR100580752B1 (ko) 2004-12-23 2006-05-15 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR100661709B1 (ko) * 2004-12-23 2006-12-26 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR100580751B1 (ko) 2004-12-23 2006-05-15 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
US7525248B1 (en) 2005-01-26 2009-04-28 Ac Led Lighting, L.L.C. Light emitting diode lamp
KR100631971B1 (ko) * 2005-02-28 2006-10-11 삼성전기주식회사 질화물 반도체 발광 소자
JP2006253224A (ja) * 2005-03-08 2006-09-21 Toyota Central Res & Dev Lab Inc 半導体装置とその製造方法
US8272757B1 (en) 2005-06-03 2012-09-25 Ac Led Lighting, L.L.C. Light emitting diode lamp capable of high AC/DC voltage operation
EP1916704A4 (en) * 2005-08-05 2011-06-08 Sekisui Chemical Co Ltd METHOD FOR FORMING GROUP III NITRIDE FILMS SUCH AS GALLIUM NITRIDE
CN100435281C (zh) * 2006-01-17 2008-11-19 北京大学 制备GaN基稀磁半导体材料的方法
KR100809243B1 (ko) * 2006-04-27 2008-02-29 삼성전기주식회사 질화물막 제조방법 및 질화물 구조
EP1883119B1 (de) * 2006-07-27 2015-11-04 OSRAM Opto Semiconductors GmbH Halbleiter-Schichtstruktur mit Übergitter
EP1883140B1 (de) * 2006-07-27 2013-02-27 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht und Dotierungsgradienten
DE102006046227A1 (de) * 2006-07-27 2008-01-31 Osram Opto Semiconductors Gmbh Halbleiter-Schichtstruktur mit Übergitter
EP1883141B1 (de) * 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
GB2444279A (en) * 2006-11-30 2008-06-04 Bookham Technology Plc Optoelectronic device
CN100438083C (zh) * 2006-12-23 2008-11-26 厦门大学 δ掺杂4H-SiC PIN结构紫外光电探测器及其制备方法
US20090072269A1 (en) * 2007-09-17 2009-03-19 Chang Soo Suh Gallium nitride diodes and integrated components
TWI485642B (zh) * 2008-02-26 2015-05-21 Epistar Corp 光電元件之客製化製造方法
US8519438B2 (en) 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
JP2009289826A (ja) * 2008-05-27 2009-12-10 Toyota Central R&D Labs Inc へテロ接合を有する半導体装置とその製造方法
US8289065B2 (en) 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
US7898004B2 (en) 2008-12-10 2011-03-01 Transphorm Inc. Semiconductor heterostructure diodes
US8742459B2 (en) * 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
US8390000B2 (en) 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
US8273617B2 (en) 2009-09-30 2012-09-25 Suvolta, Inc. Electronic devices and systems, and methods for making and using the same
US8421162B2 (en) 2009-09-30 2013-04-16 Suvolta, Inc. Advanced transistors with punch through suppression
US8658451B2 (en) 2009-11-06 2014-02-25 Ultratech, Inc. Activating GaN LEDs by laser spike annealing and flash annealing
US8592309B2 (en) * 2009-11-06 2013-11-26 Ultratech, Inc. Laser spike annealing for GaN LEDs
US9287442B2 (en) * 2009-12-04 2016-03-15 Sensor Electronic Technology, Inc. Semiconductor material doping
US9368580B2 (en) 2009-12-04 2016-06-14 Sensor Electronic Technology, Inc. Semiconductor material doping
US8426225B2 (en) * 2009-12-04 2013-04-23 Sensor Electronic Technology, Inc. Semiconductor material doping based on target valence band discontinuity
US9634183B2 (en) 2009-12-04 2017-04-25 Sensor Electronic Technology, Inc. Semiconductor material doping
US10497829B2 (en) 2009-12-04 2019-12-03 Sensor Electronic Technology, Inc. Semiconductor material doping
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
US8604461B2 (en) 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
WO2011094391A1 (en) 2010-01-27 2011-08-04 Yale University Conductivity based selective etch for gan devices and applications thereof
US8558234B2 (en) * 2010-02-11 2013-10-15 California Institute Of Technology Low voltage low light imager and photodetector
US8530286B2 (en) 2010-04-12 2013-09-10 Suvolta, Inc. Low power semiconductor transistor structure and method of fabrication thereof
US8569128B2 (en) 2010-06-21 2013-10-29 Suvolta, Inc. Semiconductor structure and method of fabrication thereof with mixed metal types
US8759872B2 (en) 2010-06-22 2014-06-24 Suvolta, Inc. Transistor with threshold voltage set notch and method of fabrication thereof
JP5548904B2 (ja) * 2010-08-30 2014-07-16 古河電気工業株式会社 窒化物系化合物半導体および窒化物系化合物半導体素子
US8377783B2 (en) 2010-09-30 2013-02-19 Suvolta, Inc. Method for reducing punch-through in a transistor device
JP5569321B2 (ja) * 2010-10-07 2014-08-13 住友電気工業株式会社 半導体装置およびその製造方法
JP2013546181A (ja) * 2010-10-28 2013-12-26 ユニバーシティ オブ ユタ リサーチ ファウンデーション Ｉｉｉ−ｖ族半導体におけるｐ型ドーピングを強化する方法
US8404551B2 (en) 2010-12-03 2013-03-26 Suvolta, Inc. Source/drain extension control for advanced transistors
US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
US8461875B1 (en) 2011-02-18 2013-06-11 Suvolta, Inc. Digital circuits having improved transistors, and methods therefor
US8148252B1 (en) 2011-03-02 2012-04-03 S.O.I. Tec Silicon On Insulator Technologies Methods of forming III/V semiconductor materials, and semiconductor structures formed using such methods
SG183608A1 (en) * 2011-03-02 2012-09-27 Soitec Silicon On Insulator Methods of forming iii/v semiconductor materials, and semiconductor structures formed using such methods
US8525271B2 (en) 2011-03-03 2013-09-03 Suvolta, Inc. Semiconductor structure with improved channel stack and method for fabrication thereof
US8716141B2 (en) 2011-03-04 2014-05-06 Transphorm Inc. Electrode configurations for semiconductor devices
US8772842B2 (en) 2011-03-04 2014-07-08 Transphorm, Inc. Semiconductor diodes with low reverse bias currents
JP5361925B2 (ja) * 2011-03-08 2013-12-04 株式会社東芝 半導体発光素子およびその製造方法
TW201238043A (en) * 2011-03-11 2012-09-16 Chi Mei Lighting Tech Corp Light-emitting diode device and method for manufacturing the same
US8400219B2 (en) 2011-03-24 2013-03-19 Suvolta, Inc. Analog circuits having improved transistors, and methods therefor
US8748270B1 (en) 2011-03-30 2014-06-10 Suvolta, Inc. Process for manufacturing an improved analog transistor
US8354689B2 (en) * 2011-04-28 2013-01-15 Palo Alto Research Center Incorporated Light emitting devices having dopant front loaded tunnel barrier layers
CN102254779B (zh) * 2011-05-10 2012-12-26 中国电子科技集团公司第五十五研究所 无需Cs激活的异质结型GaN负电子亲和势光电阴极
US8999861B1 (en) 2011-05-11 2015-04-07 Suvolta, Inc. Semiconductor structure with substitutional boron and method for fabrication thereof
US8796048B1 (en) 2011-05-11 2014-08-05 Suvolta, Inc. Monitoring and measurement of thin film layers
US8811068B1 (en) 2011-05-13 2014-08-19 Suvolta, Inc. Integrated circuit devices and methods
US8569156B1 (en) 2011-05-16 2013-10-29 Suvolta, Inc. Reducing or eliminating pre-amorphization in transistor manufacture
US8735987B1 (en) 2011-06-06 2014-05-27 Suvolta, Inc. CMOS gate stack structures and processes
US8995204B2 (en) 2011-06-23 2015-03-31 Suvolta, Inc. Circuit devices and methods having adjustable transistor body bias
US8629016B1 (en) 2011-07-26 2014-01-14 Suvolta, Inc. Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer
US8748986B1 (en) 2011-08-05 2014-06-10 Suvolta, Inc. Electronic device with controlled threshold voltage
KR101891373B1 (ko) 2011-08-05 2018-08-24 엠아이이 후지쯔 세미컨덕터 리미티드 핀 구조물을 갖는 반도체 디바이스 및 그 제조 방법
US8614128B1 (en) 2011-08-23 2013-12-24 Suvolta, Inc. CMOS structures and processes based on selective thinning
US8645878B1 (en) 2011-08-23 2014-02-04 Suvolta, Inc. Porting a circuit design from a first semiconductor process to a second semiconductor process
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
US8713511B1 (en) 2011-09-16 2014-04-29 Suvolta, Inc. Tools and methods for yield-aware semiconductor manufacturing process target generation
US8803242B2 (en) * 2011-09-19 2014-08-12 Eta Semiconductor Inc. High mobility enhancement mode FET
US9236466B1 (en) 2011-10-07 2016-01-12 Mie Fujitsu Semiconductor Limited Analog circuits having improved insulated gate transistors, and methods therefor
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
JP2013120936A (ja) 2011-12-07 2013-06-17 Ultratech Inc パターン効果を低減したＧａＮＬＥＤのレーザーアニール
US8895327B1 (en) 2011-12-09 2014-11-25 Suvolta, Inc. Tipless transistors, short-tip transistors, and methods and circuits therefor
US8819603B1 (en) 2011-12-15 2014-08-26 Suvolta, Inc. Memory circuits and methods of making and designing the same
US8883600B1 (en) 2011-12-22 2014-11-11 Suvolta, Inc. Transistor having reduced junction leakage and methods of forming thereof
US8599623B1 (en) 2011-12-23 2013-12-03 Suvolta, Inc. Circuits and methods for measuring circuit elements in an integrated circuit device
US8970289B1 (en) 2012-01-23 2015-03-03 Suvolta, Inc. Circuits and devices for generating bi-directional body bias voltages, and methods therefor
US8877619B1 (en) 2012-01-23 2014-11-04 Suvolta, Inc. Process for manufacture of integrated circuits with different channel doping transistor architectures and devices therefrom
US9093550B1 (en) 2012-01-31 2015-07-28 Mie Fujitsu Semiconductor Limited Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making same
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
US9406567B1 (en) 2012-02-28 2016-08-02 Mie Fujitsu Semiconductor Limited Method for fabricating multiple transistor devices on a substrate with varying threshold voltages
US8863064B1 (en) 2012-03-23 2014-10-14 Suvolta, Inc. SRAM cell layout structure and devices therefrom
JP5874495B2 (ja) * 2012-03-29 2016-03-02 豊田合成株式会社 Ｇａを含むＩＩＩ族窒化物半導体の製造方法
CN103367417A (zh) * 2012-03-31 2013-10-23 稳懋半导体股份有限公司 三族氮化物高电子迁移率晶体管
WO2013155108A1 (en) 2012-04-09 2013-10-17 Transphorm Inc. N-polar iii-nitride transistors
KR20130139707A (ko) * 2012-06-13 2013-12-23 삼성전자주식회사 반도체 소자 및 이에 사용되는 초격자층
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
US9299698B2 (en) 2012-06-27 2016-03-29 Mie Fujitsu Semiconductor Limited Semiconductor structure with multiple transistors having various threshold voltages
WO2014004261A1 (en) * 2012-06-28 2014-01-03 Yale University Lateral electrochemical etching of iii-nitride materials for microfabrication
KR101376976B1 (ko) * 2012-06-29 2014-03-21 인텔렉추얼디스커버리 주식회사 반도체 발광 디바이스
US8637955B1 (en) 2012-08-31 2014-01-28 Suvolta, Inc. Semiconductor structure with reduced junction leakage and method of fabrication thereof
JP6002508B2 (ja) * 2012-09-03 2016-10-05 住友化学株式会社 窒化物半導体ウェハ
US9112057B1 (en) 2012-09-18 2015-08-18 Mie Fujitsu Semiconductor Limited Semiconductor devices with dopant migration suppression and method of fabrication thereof
US9041126B2 (en) 2012-09-21 2015-05-26 Mie Fujitsu Semiconductor Limited Deeply depleted MOS transistors having a screening layer and methods thereof
CN102903615B (zh) * 2012-10-18 2018-02-06 中山大学 一种p型GaN与AlGaN半导体材料的制备方法
WO2014071049A2 (en) 2012-10-31 2014-05-08 Suvolta, Inc. Dram-type device with low variation transistor peripheral circuits, and related methods
US8816754B1 (en) 2012-11-02 2014-08-26 Suvolta, Inc. Body bias circuits and methods
US9093997B1 (en) 2012-11-15 2015-07-28 Mie Fujitsu Semiconductor Limited Slew based process and bias monitors and related methods
US9070477B1 (en) 2012-12-12 2015-06-30 Mie Fujitsu Semiconductor Limited Bit interleaved low voltage static random access memory (SRAM) and related methods
US9112484B1 (en) 2012-12-20 2015-08-18 Mie Fujitsu Semiconductor Limited Integrated circuit process and bias monitors and related methods
CN104937731B (zh) * 2013-01-23 2017-08-25 优志旺电机株式会社 Led元件
US9171730B2 (en) 2013-02-15 2015-10-27 Transphorm Inc. Electrodes for semiconductor devices and methods of forming the same
US9268885B1 (en) 2013-02-28 2016-02-23 Mie Fujitsu Semiconductor Limited Integrated circuit device methods and models with predicted device metric variations
US8994415B1 (en) 2013-03-01 2015-03-31 Suvolta, Inc. Multiple VDD clock buffer
US8988153B1 (en) 2013-03-09 2015-03-24 Suvolta, Inc. Ring oscillator with NMOS or PMOS variation insensitivity
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9299801B1 (en) 2013-03-14 2016-03-29 Mie Fujitsu Semiconductor Limited Method for fabricating a transistor device with a tuned dopant profile
US9449967B1 (en) 2013-03-15 2016-09-20 Fujitsu Semiconductor Limited Transistor array structure
US9245993B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
US9112495B1 (en) 2013-03-15 2015-08-18 Mie Fujitsu Semiconductor Limited Integrated circuit device body bias circuits and methods
US9478571B1 (en) 2013-05-24 2016-10-25 Mie Fujitsu Semiconductor Limited Buried channel deeply depleted channel transistor
US9443938B2 (en) 2013-07-19 2016-09-13 Transphorm Inc. III-nitride transistor including a p-type depleting layer
US9041060B2 (en) 2013-07-25 2015-05-26 International Business Machines Corporation III-V FET device with overlapped extension regions using gate last
US9443728B2 (en) * 2013-08-16 2016-09-13 Applied Materials, Inc. Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processing
JP6052420B2 (ja) * 2013-08-27 2016-12-27 富士電機株式会社 半導体装置の製造方法
US8976575B1 (en) 2013-08-29 2015-03-10 Suvolta, Inc. SRAM performance monitor
US20150137179A1 (en) * 2013-11-19 2015-05-21 Huga Optotech Inc. Power device
US9640650B2 (en) * 2014-01-16 2017-05-02 Qorvo Us, Inc. Doped gallium nitride high-electron mobility transistor
US11095096B2 (en) 2014-04-16 2021-08-17 Yale University Method for a GaN vertical microcavity surface emitting laser (VCSEL)
WO2015181657A1 (en) 2014-05-27 2015-12-03 The Silanna Group Pty Limited Advanced electronic device structures using semiconductor structures and superlattices
CN106415854B (zh) * 2014-05-27 2019-10-01 斯兰纳Uv科技有限公司 包括n型和p型超晶格的电子装置
US11322643B2 (en) 2014-05-27 2022-05-03 Silanna UV Technologies Pte Ltd Optoelectronic device
JP6817072B2 (ja) 2014-05-27 2021-01-20 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドＳｉｌａｎｎａ Ｕｖ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ Ｌｔｄ 光電子デバイス
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
US9710006B2 (en) 2014-07-25 2017-07-18 Mie Fujitsu Semiconductor Limited Power up body bias circuits and methods
DE102014111058A1 (de) * 2014-08-04 2016-02-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
US9231064B1 (en) 2014-08-12 2016-01-05 Raytheon Company Double heterojunction group III-nitride structures
US9319013B2 (en) 2014-08-19 2016-04-19 Mie Fujitsu Semiconductor Limited Operational amplifier input offset correction with transistor threshold voltage adjustment
EP3201952B1 (en) 2014-09-30 2023-03-29 Yale University A method for gan vertical microcavity surface emitting laser
US9876143B2 (en) * 2014-10-01 2018-01-23 Rayvio Corporation Ultraviolet light emitting device doped with boron
US11018231B2 (en) 2014-12-01 2021-05-25 Yale University Method to make buried, highly conductive p-type III-nitride layers
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
US9580304B2 (en) * 2015-05-07 2017-02-28 Texas Instruments Incorporated Low-stress low-hydrogen LPCVD silicon nitride
US10554017B2 (en) 2015-05-19 2020-02-04 Yale University Method and device concerning III-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer
TWI552948B (zh) * 2015-06-05 2016-10-11 環球晶圓股份有限公司 半導體元件
CN105070801B (zh) * 2015-08-18 2018-03-06 西安电子科技大学 非Si掺杂无InGaN黄光LED材料及其制作方法
CN105429001B (zh) * 2015-10-27 2019-06-25 西安电子科技大学 Si/Ge超晶格量子级联激光器及其制备方法
US10685835B2 (en) 2015-11-04 2020-06-16 The Regents Of The University Of California III-nitride tunnel junction with modified P-N interface
US9941363B2 (en) 2015-12-18 2018-04-10 International Business Machines Corporation III-V transistor device with self-aligned doped bottom barrier
CN108604597B (zh) 2016-01-15 2021-09-17 创世舫电子有限公司 具有al(1-x)sixo栅极绝缘体的增强模式iii-氮化物器件
CN107230709A (zh) * 2016-03-25 2017-10-03 北京大学 AlGaN/GaN MIS-HEMT的制作方法
WO2017210323A1 (en) 2016-05-31 2017-12-07 Transphorm Inc. Iii-nitride devices including a graded depleting layer
JP7019942B2 (ja) * 2016-09-28 2022-02-16 富士通株式会社 化合物半導体基板及びその製造方法、化合物半導体装置及びその製造方法、電源装置、高出力増幅器
TWI762467B (zh) * 2017-02-22 2022-05-01 晶元光電股份有限公司 氮化物半導體磊晶疊層結構及其功率元件
GB2608714B (en) * 2017-07-07 2023-04-05 Skyworks Solutions Inc Substituted aluminium nitride for improved acoustic wave filters
CN111448674B (zh) * 2017-12-05 2023-08-22 阿卜杜拉国王科技大学 用于形成分级纤锌矿iii族氮化物合金层的方法
JP6668316B2 (ja) * 2017-12-25 2020-03-18 株式会社サイオクス 窒化物半導体積層物および半導体装置
WO2019227100A1 (en) * 2018-05-25 2019-11-28 The Regents Of The University Of Michigan Enhanced doping efficiency of ultrawide bandgap semiconductors by metal-semiconductor assisted epitaxy
CN108899403B (zh) * 2018-07-20 2020-09-22 西安电子科技大学 基于ScAlN/AlGaN超晶格p型层的高效发光二极管及制备方法
CN109742203A (zh) * 2019-01-14 2019-05-10 江西兆驰半导体有限公司 一种氮化物发光二极管
KR20220025720A (ko) * 2019-07-16 2022-03-03 어쿠스티스, 인크. Mocvd를 통해 도핑된 결정질 압전 박막들을 형성하는 방법들, 및 관련된 도핑된 결정질 압전 박막들
CN110364606A (zh) * 2019-07-26 2019-10-22 佛山市国星半导体技术有限公司 一种紫外发光二极管外延结构及其制作方法
GB2594558B (en) 2020-02-28 2024-07-31 Skyworks Solutions Inc Aluminium nitride dopant scheme for bulk acoustic wave filters
CN112522781B (zh) * 2021-02-18 2021-04-23 中芯集成电路制造(绍兴)有限公司 碳化硅衬底上的缓冲层及其形成方法
US12407325B2 (en) 2021-03-04 2025-09-02 Skyworks Solutions, Inc. Aluminum nitride dopant scheme for bulk acoustic wave filters
CN113555462B (zh) * 2021-07-05 2023-01-17 浙江芯科半导体有限公司 一种双结型Ga2O3器件及其制备方法
CN114000199B (zh) * 2021-08-27 2023-01-31 深圳市汇芯通信技术有限公司 单晶氮化铝薄膜及其制作方法、体声波滤波器的制作方法
CN114094976B (zh) * 2022-01-24 2022-04-15 湖南大学 一种氮化铝薄膜及其制备方法和薄膜体声波滤波器

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060234A (en) * 1984-11-19 1991-10-22 Max-Planck Gesellschaft Zur Forderung Der Wissenschaften Injection laser with at least one pair of monoatomic layers of doping atoms
US4780748A (en) * 1986-06-06 1988-10-25 American Telephone & Telegraph Company, At&T Bell Laboratories Field-effect transistor having a delta-doped ohmic contact
US5965931A (en) * 1993-04-19 1999-10-12 The Board Of Regents Of The University Of California Bipolar transistor having base region with coupled delta layers
US5679152A (en) 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
EP0841704A1 (en) 1996-11-07 1998-05-13 Paul-Drude-Institut für Festkörperelektronik Semiconductor transistor device and method of manufacturing the same
JP3412128B2 (ja) 1997-03-06 2003-06-03 株式会社島津機械製作所 自動巻き寿司製造装置
US5831277A (en) * 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures
CN1131548C (zh) * 1997-04-04 2003-12-17 松下电器产业株式会社 半导体装置
JP3047852B2 (ja) * 1997-04-04 2000-06-05 松下電器産業株式会社 半導体装置
JPH10294452A (ja) 1997-04-22 1998-11-04 Sony Corp ヘテロ接合電界効果トランジスタ
JPH10335637A (ja) * 1997-05-30 1998-12-18 Sony Corp ヘテロ接合電界効果トランジスタ
US6316793B1 (en) 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
JP2000138368A (ja) 1998-10-29 2000-05-16 Hitachi Cable Ltd Ｉｉｉ−ｖ族化合物半導体の気相成長方法及び高電子移動度トランジスタの製造方法
JP3443034B2 (ja) 1999-05-13 2003-09-02 日本電信電話株式会社 電界効果トランジスタ
JP2001077353A (ja) 1999-06-30 2001-03-23 Toshiba Corp 高電子移動度トランジスタ及び電力増幅器
JP3609661B2 (ja) * 1999-08-19 2005-01-12 株式会社東芝 半導体発光素子
US6342411B1 (en) 1999-09-03 2002-01-29 Motorola Inc. Electronic component and method for manufacture
US6498360B1 (en) * 2000-02-29 2002-12-24 University Of Connecticut Coupled-well structure for transport channel in field effect transistors
WO2001067521A1 (en) 2000-03-03 2001-09-13 Matsushita Electric Industrial Co., Ltd. Semiconductor device
JP3751791B2 (ja) 2000-03-28 2006-03-01 日本電気株式会社 ヘテロ接合電界効果トランジスタ
JP2001284576A (ja) 2000-03-30 2001-10-12 Toshiba Corp 高電子移動度トランジスタ及びその製造方法
JP4186032B2 (ja) 2000-06-29 2008-11-26 日本電気株式会社 半導体装置
JP4022708B2 (ja) 2000-06-29 2007-12-19 日本電気株式会社 半導体装置
US6515316B1 (en) 2000-07-14 2003-02-04 Trw Inc. Partially relaxed channel HEMT device
US6992319B2 (en) * 2000-07-18 2006-01-31 Epitaxial Technologies Ultra-linear multi-channel field effect transistor
JP2002057158A (ja) * 2000-08-09 2002-02-22 Sony Corp 絶縁性窒化物層及びその形成方法、半導体装置及びその製造方法
JP2002314072A (ja) 2001-04-19 2002-10-25 Nec Corp 高誘電体薄膜を備えた半導体装置及びその製造方法並びに誘電体膜の成膜装置
US6849882B2 (en) * 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100679235B1 (ko) * 2005-12-07 2007-02-06 한국전자통신연구원 반도체 발광소자 및 그 제조방법

Also Published As

Publication number Publication date
EP1488460B1 (en) 2013-01-02
TW200306016A (en) 2003-11-01
EP1488460A4 (en) 2008-02-20
JP2005526384A (ja) 2005-09-02
US20030178633A1 (en) 2003-09-25
CA2479657A1 (en) 2003-10-09
US7919791B2 (en) 2011-04-05
AU2003224709A1 (en) 2003-10-13
EP1488460A1 (en) 2004-12-22
WO2003083950A1 (en) 2003-10-09
CN100375292C (zh) 2008-03-12
CN1643696A (zh) 2005-07-20
JP4916090B2 (ja) 2012-04-11

Similar Documents

Publication Publication Date Title
KR20040104959A (ko) 도핑된 그룹 ⅲ-ⅴ 질화물 재료 및 이를 포함하는마이크로일렉트로닉 디바이스 및 디바이스 프리커서 구조물
US5432808A (en) Compound semicondutor light-emitting device
JP3909811B2 (ja) 窒化物半導体素子及びその製造方法
US8193539B2 (en) Compound semiconductor device using SiC substrate and its manufacture
JP2003037289A (ja) 低駆動電圧のｉｉｉ族窒化物発光素子
WO2012101856A1 (ja) 窒化物半導体素子の製造方法
KR20080092253A (ko) Ⅲ-ⅴ족 화합물 반도체의 제조 방법, 쇼트키 배리어 다이오드, 발광 다이오드, 레이저 다이오드 및 이들의 제조 방법
JP2007165431A (ja) 電界効果型トランジスタおよびその製造方法
JP3761589B2 (ja) 窒化ガリウム系化合物半導体発光素子
JP2016058693A (ja) 半導体装置、半導体ウェーハ、及び、半導体装置の製造方法
US6437374B1 (en) Semiconductor device and method of forming a semiconductor device
JPH11220169A (ja) 窒化ガリウム系化合物半導体素子及びその製造方法
CN117894897B (zh) 一种led外延片及其制备方法、led芯片
CN116960173B (zh) 高电子迁移率晶体管外延结构及制备方法、hemt器件
CN107658374B (zh) 一种发光二极管的外延片及其制备方法
JP5746927B2 (ja) 半導体基板、半導体デバイスおよび半導体基板の製造方法
JP2001308196A (ja) 絶縁ゲート型半導体装置
JP3547320B2 (ja) ＧａＮ系化合物半導体装置
US6583449B2 (en) Semiconductor device and method of forming a semiconductor device
JP3403665B2 (ja) 窒化ガリウム系化合物半導体発光素子
JP3564811B2 (ja) ３族窒化物半導体発光素子
KR101337615B1 (ko) 질화갈륨계 화합물 반도체 및 그 제조방법
CN117199124A (zh) 功率器件外延结构及其制备方法、功率器件
JP3592922B2 (ja) 化合物半導体基板
JP4865584B2 (ja) 半導体素子及びその製造方法

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20040924

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
AMND Amendment
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20080319

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20100120

Patent event code: PE09021S01D

AMND Amendment
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20100901

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20101214

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20100901

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

Patent event date: 20100120

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

Patent event date: 20110114

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20101214

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20121121

Appeal identifier: 2011101000287

Request date: 20110114

AMND Amendment
B90T Transfer of trial file for re-examination
PB0901 Examination by re-examination before a trial

Comment text: Amendment to Specification, etc.

Patent event date: 20110211

Patent event code: PB09011R02I

Comment text: Request for Trial against Decision on Refusal

Patent event date: 20110114

Patent event code: PB09011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20101101

Patent event code: PB09011R02I

Comment text: Amendment to Specification, etc.

Patent event date: 20100520

Patent event code: PB09011R02I

Comment text: Amendment to Specification, etc.

Patent event date: 20080319

Patent event code: PB09011R02I

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

Comment text: Report of Result of Re-examination before a Trial

Patent event code: PB06011S01D

Patent event date: 20110221

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20110114

Effective date: 20121121

PJ1301 Trial decision

Patent event code: PJ13011S01D

Patent event date: 20121121

Comment text: Trial Decision on Objection to Decision on Refusal

Appeal kind category: Appeal against decision to decline refusal

Request date: 20110114

Decision date: 20121121

Appeal identifier: 2011101000287

PS0901 Examination by remand of revocation
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20121204

Patent event code: PE09021S01D

AMND Amendment
PS0601 Decision to reject again after remand of revocation

Patent event date: 20130425

Comment text: Decision to Refuse Application

Patent event code: PS06013S01D

Patent event date: 20121204

Comment text: Notification of reason for refusal

Patent event code: PS06012S01I

Patent event date: 20121122

Comment text: Notice of Trial Decision (Remand of Revocation)

Patent event code: PS06011S01I

Patent event date: 20100901

Comment text: Notification of reason for refusal

Patent event code: PS06012S01I

Patent event date: 20100120

Comment text: Notification of reason for refusal

Patent event code: PS06012S01I

S601 Decision to reject again after remand of revocation
J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

Patent event date: 20130725

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20130425

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Patent event date: 20101214

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20141023

Appeal identifier: 2013101005440

Request date: 20130725

AMND Amendment
PB0901 Examination by re-examination before a trial

Comment text: Amendment to Specification, etc.

Patent event date: 20130823

Patent event code: PB09011R02I

Comment text: Request for Trial against Decision on Refusal

Patent event date: 20130725

Patent event code: PB09011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20130404

Patent event code: PB09011R02I

Comment text: Transfer of Trial File for Re-examination before a Trial

Patent event date: 20110218

Patent event code: PB09012E01I

Comment text: Amendment to Specification, etc.

Patent event date: 20110211

Patent event code: PB09011R02I

Comment text: Request for Trial against Decision on Refusal

Patent event date: 20110114

Patent event code: PB09011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20101101

Patent event code: PB09011R02I

Comment text: Amendment to Specification, etc.

Patent event date: 20100520

Patent event code: PB09011R02I

Comment text: Amendment to Specification, etc.

Patent event date: 20080319

Patent event code: PB09011R02I

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

Comment text: Report of Result of Re-examination before a Trial

Patent event code: PB06011S01D

Patent event date: 20131002

PE0801 Dismissal of amendment

Patent event code: PE08012E01D

Comment text: Decision on Dismissal of Amendment

Patent event date: 20131002

Patent event code: PE08011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20130823

Patent event code: PE08011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20130404

Patent event code: PE08011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20110211

Patent event code: PE08011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20101101

Patent event code: PE08011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20100520

Patent event code: PE08011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20080319

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20130725

Effective date: 20141023

PJ1301 Trial decision

Patent event code: PJ13011S01D

Patent event date: 20141024

Comment text: Trial Decision on Objection to Decision on Refusal

Appeal kind category: Appeal against decision to decline refusal

Request date: 20130725

Decision date: 20141023

Appeal identifier: 2013101005440