KR102561732B1 - 3차원 메모리 장치의 쓰루 어레이 컨택 구조 - Google Patents

3차원 메모리 장치의 쓰루 어레이 컨택 구조 Download PDF

Info

Publication number
KR102561732B1
KR102561732B1 KR1020217042772A KR20217042772A KR102561732B1 KR 102561732 B1 KR102561732 B1 KR 102561732B1 KR 1020217042772 A KR1020217042772 A KR 1020217042772A KR 20217042772 A KR20217042772 A KR 20217042772A KR 102561732 B1 KR102561732 B1 KR 102561732B1
Authority
KR
South Korea
Prior art keywords
region
alternating
memory device
structures
dielectric stack
Prior art date
Application number
KR1020217042772A
Other languages
English (en)
Korean (ko)
Other versions
KR20220000956A (ko
Inventor
젠유 루
웬구앙 시
구안핑 우
샨진 완
바오유 첸
Original Assignee
양쯔 메모리 테크놀로지스 씨오., 엘티디.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201710135329.2A external-priority patent/CN106920794B/zh
Priority claimed from CN201710135654.9A external-priority patent/CN107068687B/zh
Application filed by 양쯔 메모리 테크놀로지스 씨오., 엘티디. filed Critical 양쯔 메모리 테크놀로지스 씨오., 엘티디.
Priority to KR1020237025666A priority Critical patent/KR20230117633A/ko
Publication of KR20220000956A publication Critical patent/KR20220000956A/ko
Application granted granted Critical
Publication of KR102561732B1 publication Critical patent/KR102561732B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020217042772A 2017-03-08 2018-03-01 3차원 메모리 장치의 쓰루 어레이 컨택 구조 KR102561732B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020237025666A KR20230117633A (ko) 2017-03-08 2018-03-01 3차원 메모리 장치의 쓰루 어레이 컨택 구조

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
CN201710135329.2A CN106920794B (zh) 2017-03-08 2017-03-08 一种3d nand存储器件及其制造方法
CN201710135654.9 2017-03-08
CN201710135654.9A CN107068687B (zh) 2017-03-08 2017-03-08 一种3d nand存储器件及其制造方法
CN201710135329.2 2017-03-08
PCT/CN2018/077719 WO2018161836A1 (en) 2017-03-08 2018-03-01 Through array contact structure of three-dimensional memory device
KR1020197029441A KR102346409B1 (ko) 2017-03-08 2018-03-01 3차원 메모리 장치의 쓰루 어레이 컨택 구조

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020197029441A Division KR102346409B1 (ko) 2017-03-08 2018-03-01 3차원 메모리 장치의 쓰루 어레이 컨택 구조

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020237025666A Division KR20230117633A (ko) 2017-03-08 2018-03-01 3차원 메모리 장치의 쓰루 어레이 컨택 구조

Publications (2)

Publication Number Publication Date
KR20220000956A KR20220000956A (ko) 2022-01-04
KR102561732B1 true KR102561732B1 (ko) 2023-07-31

Family

ID=63448095

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020197029441A KR102346409B1 (ko) 2017-03-08 2018-03-01 3차원 메모리 장치의 쓰루 어레이 컨택 구조
KR1020217042772A KR102561732B1 (ko) 2017-03-08 2018-03-01 3차원 메모리 장치의 쓰루 어레이 컨택 구조
KR1020237025666A KR20230117633A (ko) 2017-03-08 2018-03-01 3차원 메모리 장치의 쓰루 어레이 컨택 구조

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1020197029441A KR102346409B1 (ko) 2017-03-08 2018-03-01 3차원 메모리 장치의 쓰루 어레이 컨택 구조

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020237025666A KR20230117633A (ko) 2017-03-08 2018-03-01 3차원 메모리 장치의 쓰루 어레이 컨택 구조

Country Status (7)

Country Link
US (5) US10553604B2 (zh)
EP (2) EP3580783B1 (zh)
JP (3) JP6978645B2 (zh)
KR (3) KR102346409B1 (zh)
CN (1) CN110114881B (zh)
TW (1) TWI665785B (zh)
WO (1) WO2018161836A1 (zh)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106910746B (zh) * 2017-03-08 2018-06-19 长江存储科技有限责任公司 一种3d nand存储器件及其制造方法、封装方法
EP3580783B1 (en) 2017-03-08 2024-05-01 Yangtze Memory Technologies Co., Ltd. Through array contact structure of three-dimensional memory device
KR102442933B1 (ko) * 2017-08-21 2022-09-15 삼성전자주식회사 3차원 반도체 장치
US10726921B2 (en) * 2017-09-19 2020-07-28 Sandisk Technologies Llc Increased terrace configuration for non-volatile memory
KR102619626B1 (ko) * 2018-06-12 2023-12-29 삼성전자주식회사 3차원 반도체 메모리 소자
JP2021527692A (ja) * 2018-06-20 2021-10-14 ニューロポア セラピーズ インコーポレイテッド Ｏａｔ３の阻害剤を用いた神経変性に関連する状態の処置方法
KR102589663B1 (ko) * 2018-08-22 2023-10-17 삼성전자주식회사 3차원 반도체 메모리 소자
US10868032B2 (en) 2018-10-15 2020-12-15 Micron Technology, Inc. Dielectric extensions in stacked memory arrays
CN111916461B (zh) * 2018-10-18 2021-03-30 长江存储科技有限责任公司 具有z字形狭缝结构的三维存储器件及其形成方法
KR102668014B1 (ko) * 2018-10-25 2024-05-22 삼성전자주식회사 비휘발성 메모리 장치, 수직형 낸드 플래시 메모리 장치 및 이를 포함하는 에스에스디 장치
JP2022513730A (ja) * 2018-12-07 2022-02-09 長江存儲科技有限責任公司 新規の３ｄ ｎａｎｄメモリデバイスおよびそれを形成する方法
KR102635202B1 (ko) * 2019-02-18 2024-02-07 양쯔 메모리 테크놀로지스 씨오., 엘티디. 3d nand의 페이지 또는 블록 크기 및 성능을 개선하기 위한 채널 홀 및 비트 라인 아키텍처 및 방법
KR102650424B1 (ko) * 2019-02-25 2024-03-25 에스케이하이닉스 주식회사 반도체 메모리 장치
WO2020172798A1 (en) * 2019-02-26 2020-09-03 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory device and method for forming the same
WO2020177048A1 (en) * 2019-03-04 2020-09-10 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices
WO2020177049A1 (en) 2019-03-04 2020-09-10 Yangtze Memory Technologies Co., Ltd. Methods for forming three-dimensional memory devices
WO2020198944A1 (en) * 2019-03-29 2020-10-08 Yangtze Memory Technologies Co., Ltd. Memory stacks having silicon nitride gate-to-gate dielectric layers and methods for forming the same
US11189635B2 (en) 2019-04-01 2021-11-30 Applied Materials, Inc. 3D-NAND mold
TWI692018B (zh) * 2019-04-22 2020-04-21 旺宏電子股份有限公司 半導體結構及其形成方法
US11037944B2 (en) 2019-07-10 2021-06-15 Micron Technology, Inc. Memory arrays and methods used in forming a memory array comprising strings of memory cells and operative through-array-vias
KR102678190B1 (ko) * 2019-07-15 2024-06-25 미미르아이피 엘엘씨 반도체 메모리 장치 및 그 제조방법
DE102020109687A1 (de) * 2019-07-29 2021-02-04 Samsung Electronics Co., Ltd. Halbleiterspeicherbauelement
US10985179B2 (en) * 2019-08-05 2021-04-20 Micron Technology, Inc. Memory arrays and methods used in forming a memory array comprising strings of memory cells and operative through-array-vias
KR20210022797A (ko) * 2019-08-20 2021-03-04 삼성전자주식회사 반도체 장치
KR20210027938A (ko) * 2019-09-03 2021-03-11 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 제조 방법
US11638377B2 (en) 2019-09-13 2023-04-25 Applied Materials, Inc. Self-aligned select gate cut for 3D NAND
CN112635488B (zh) 2019-09-29 2024-05-24 长江存储科技有限责任公司 三维存储器件及其形成方法
WO2021056513A1 (en) 2019-09-29 2021-04-01 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and methods for forming the same
WO2021056514A1 (en) * 2019-09-29 2021-04-01 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and forming methods
US11444092B2 (en) 2019-10-11 2022-09-13 SK Hynix Inc. Semiconductor memory device and method of manufacturing the same
CN110998845B (zh) 2019-11-22 2022-01-07 长江存储科技有限责任公司 三维存储器件中的具有处于衬底内的导电部分的接触结构及其形成方法
WO2021097797A1 (en) * 2019-11-22 2021-05-27 Yangtze Memory Technologies Co., Ltd. Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same
KR20210083545A (ko) 2019-12-27 2021-07-07 삼성전자주식회사 씨오피 구조를 갖는 메모리 장치 및 이를 포함하는 메모리 패키지
KR20210086098A (ko) * 2019-12-31 2021-07-08 삼성전자주식회사 집적회로 소자
CN111293121B (zh) * 2020-01-02 2021-08-13 长江存储科技有限责任公司 3d存储器件及其制造方法
US11444093B2 (en) * 2020-01-10 2022-09-13 Micron Technology, Inc. Memory arrays and methods of forming memory arrays
KR20210091475A (ko) * 2020-01-14 2021-07-22 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 제조 방법
US11342244B2 (en) * 2020-01-21 2022-05-24 Sandisk Technologies Llc Bonded assembly of semiconductor dies containing pad level across-die metal wiring and method of forming the same
EP3921865A4 (en) * 2020-01-21 2022-07-13 Yangtze Memory Technologies Co., Ltd. INTERCONNECTING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES
KR20210095390A (ko) * 2020-01-23 2021-08-02 삼성전자주식회사 폴리 실리콘과 메탈을 포함하는 워드 라인을 갖는 3차원 메모리 소자 및 이의 제조 방법
US11587796B2 (en) 2020-01-23 2023-02-21 Applied Materials, Inc. 3D-NAND memory cell structure
CN111316442B (zh) * 2020-01-28 2021-05-14 长江存储科技有限责任公司 三维存储器件及用于形成三维存储器件的方法
EP3900041B1 (en) * 2020-01-28 2024-07-24 Yangtze Memory Technologies Co., Ltd. Vertical memory devices
CN111279480B (zh) * 2020-01-28 2021-02-12 长江存储科技有限责任公司 三维存储器件及用于形成三维存储器件的方法
KR20210099348A (ko) * 2020-02-04 2021-08-12 에스케이하이닉스 주식회사 반도체 장치
US11380705B2 (en) * 2020-02-07 2022-07-05 Micron Technology, Inc. Integrated assemblies, and methods of forming integrated assemblies
CN111403406B (zh) * 2020-03-13 2023-05-05 长江存储科技有限责任公司 三维存储器及其制备方法
JP2021150296A (ja) * 2020-03-16 2021-09-27 キオクシア株式会社 半導体記憶装置
CN111527605B (zh) 2020-03-20 2021-07-20 长江存储科技有限责任公司 三维存储器件及其制造方法
US11081443B1 (en) 2020-03-24 2021-08-03 Sandisk Technologies Llc Multi-tier three-dimensional memory device containing dielectric well structures for contact via structures and methods of forming the same
JP7317995B2 (ja) 2020-04-24 2023-07-31 長江存儲科技有限責任公司 ドレイン選択ゲートカット構造を備えた三次元メモリデバイスおよびこれを形成するための方法
US11367736B2 (en) 2020-05-22 2022-06-21 Sandisk Technologies Llc Through-stack contact via structures for a three-dimensional memory device and methods of forming the same
US11355506B2 (en) * 2020-05-22 2022-06-07 Sandisk Technologies Llc Through-stack contact via structures for a three-dimensional memory device and methods of forming the same
US11342245B2 (en) 2020-05-22 2022-05-24 Sandisk Technologies Llc Through-stack contact via structures for a three-dimensional memory device and methods of forming the same
US11437318B2 (en) * 2020-06-12 2022-09-06 Micron Technology, Inc. Microelectronic devices including staircase structures, and related memory devices and electronic systems
WO2021248426A1 (en) * 2020-06-12 2021-12-16 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices with drain select gate cut and methods for forming the same
US11930637B2 (en) 2020-06-19 2024-03-12 Applied Materials, Inc. Confined charge trap layer
US11985825B2 (en) 2020-06-25 2024-05-14 Taiwan Semiconductor Manufacturing Co., Ltd. 3D memory array contact structures
US11600520B2 (en) 2020-06-26 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Air gaps in memory array structures
US11532343B2 (en) 2020-06-26 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Memory array including dummy regions
US11587919B2 (en) 2020-07-17 2023-02-21 Micron Technology, Inc. Microelectronic devices, related electronic systems, and methods of forming microelectronic devices
US11482536B2 (en) 2020-07-23 2022-10-25 Micron Technology, Inc. Electronic devices comprising memory pillars and dummy pillars including an oxide material, and related systems and methods
US11495618B2 (en) 2020-07-30 2022-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional memory device and method
WO2022032469A1 (en) * 2020-08-11 2022-02-17 Yangtze Memory Technologies Co., Ltd. Memory device and fabrication method thereof
KR20220033594A (ko) * 2020-09-08 2022-03-17 삼성전자주식회사 반도체 장치 및 이를 포함하는 데이터 저장 시스템
KR20220036053A (ko) 2020-09-15 2022-03-22 삼성전자주식회사 반도체 장치 및 이를 포함하는 데이터 저장 시스템
CN112534576B (zh) * 2020-11-04 2024-05-24 长江存储科技有限责任公司 用于三维存储设备中的中心阶梯结构的底部选择栅极触点
CN112331667B (zh) * 2020-11-10 2021-09-28 长江存储科技有限责任公司 三维存储器及其制造方法
US11690222B2 (en) * 2020-11-24 2023-06-27 Macronix International Co., Ltd. Three-dimensional memory device
WO2022133990A1 (en) * 2020-12-25 2022-06-30 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory device having source-select-gate cut structures and methods for forming the same
WO2022133995A1 (en) 2020-12-25 2022-06-30 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory device having source-select-gate cut structures and methods for forming same
US11996153B2 (en) 2021-08-09 2024-05-28 Sandisk Technologies Llc Three-dimensional memory device with separated contact regions and methods for forming the same
US11792988B2 (en) * 2021-08-09 2023-10-17 Sandisk Technologies Llc Three-dimensional memory device with separated contact regions and methods for forming the same
US11889694B2 (en) 2021-08-09 2024-01-30 Sandisk Technologies Llc Three-dimensional memory device with separated contact regions and methods for forming the same
CN116508409A (zh) * 2021-11-18 2023-07-28 长江存储科技有限责任公司 三维存储器器件及其形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101162721A (zh) 2006-10-11 2008-04-16 三星电子株式会社 具有3-维布置的存储单元的nand快闪存储器件及其制造方法
CN103117282A (zh) 2011-10-24 2013-05-22 爱思开海力士有限公司 三维非易失性存储器件、存储系统及制造方法
US20160163732A1 (en) 2014-12-09 2016-06-09 Joon-Sung LIM Semiconductor devices

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120121177A (ko) * 2011-04-26 2012-11-05 에스케이하이닉스 주식회사 반도체 메모리 소자 및 그 제조방법
JP6140400B2 (ja) * 2011-07-08 2017-05-31 エスケーハイニックス株式会社ＳＫ ｈｙｎｉｘ Ｉｎｃ． 半導体装置及びその製造方法
KR101845511B1 (ko) * 2011-10-11 2018-04-05 삼성전자주식회사 수직 구조의 비휘발성 메모리 소자 제조 방법
US8933502B2 (en) 2011-11-21 2015-01-13 Sandisk Technologies Inc. 3D non-volatile memory with metal silicide interconnect
US8951859B2 (en) * 2011-11-21 2015-02-10 Sandisk Technologies Inc. Method for fabricating passive devices for 3D non-volatile memory
US8878278B2 (en) * 2012-03-21 2014-11-04 Sandisk Technologies Inc. Compact three dimensional vertical NAND and method of making thereof
KR101989514B1 (ko) 2012-07-11 2019-06-14 삼성전자주식회사 반도체 소자 및 그 제조 방법
KR101985936B1 (ko) 2012-08-29 2019-06-05 에스케이하이닉스 주식회사 불휘발성 메모리 소자와 그 제조방법
CN103680611B (zh) * 2012-09-18 2017-05-31 中芯国际集成电路制造(上海)有限公司 3d nand存储器以及制作方法
KR20140063147A (ko) * 2012-11-16 2014-05-27 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
US9230987B2 (en) * 2014-02-20 2016-01-05 Sandisk Technologies Inc. Multilevel memory stack structure and methods of manufacturing the same
CN104051467B (zh) * 2013-03-13 2017-04-12 旺宏电子股份有限公司 具有增强的接触区的三维集成电路装置
KR20150116510A (ko) 2014-04-07 2015-10-16 에스케이하이닉스 주식회사 반도체 장치 및 그 제조방법
KR102150253B1 (ko) 2014-06-24 2020-09-02 삼성전자주식회사 반도체 장치
US9230974B1 (en) * 2014-08-26 2016-01-05 Sandisk Technologies Inc. Methods of selective removal of blocking dielectric in NAND memory strings
US9401309B2 (en) * 2014-08-26 2016-07-26 Sandisk Technologies Llc Multiheight contact via structures for a multilevel interconnect structure
JP2016058552A (ja) 2014-09-09 2016-04-21 株式会社東芝 半導体装置の製造方法
US20160079252A1 (en) 2014-09-11 2016-03-17 Kabushiki Kaisha Toshiba Semiconductor memory device and method for manufacturing the same
CN104269407B (zh) 2014-09-16 2017-04-19 华中科技大学 一种非易失性高密度三维半导体存储器件及其制备方法
US9419135B2 (en) 2014-11-13 2016-08-16 Sandisk Technologies Llc Three dimensional NAND device having reduced wafer bowing and method of making thereof
KR102310511B1 (ko) * 2014-12-19 2021-10-08 삼성전자주식회사 반도체 소자 및 그 형성 방법
US9397046B1 (en) * 2015-04-29 2016-07-19 Sandisk Technologies Llc Fluorine-free word lines for three-dimensional memory devices
US9627403B2 (en) * 2015-04-30 2017-04-18 Sandisk Technologies Llc Multilevel memory stack structure employing support pillar structures
US10074661B2 (en) * 2015-05-08 2018-09-11 Sandisk Technologies Llc Three-dimensional junction memory device and method reading thereof using hole current detection
KR102282139B1 (ko) 2015-05-12 2021-07-28 삼성전자주식회사 반도체 장치
KR20160138883A (ko) * 2015-05-26 2016-12-06 에스케이하이닉스 주식회사 반도체 장치 및 그 제조방법
KR20160138765A (ko) * 2015-05-26 2016-12-06 에스케이하이닉스 주식회사 슬리밍 구조물을 포함하는 반도체 메모리 장치
US9960177B2 (en) 2015-05-26 2018-05-01 SK Hynix Inc. Semiconductor device and manufacturing method of the same
KR102378820B1 (ko) * 2015-08-07 2022-03-28 삼성전자주식회사 메모리 장치
KR20170027571A (ko) * 2015-09-02 2017-03-10 에스케이하이닉스 주식회사 반도체 장치 및 그 제조방법
US9401371B1 (en) * 2015-09-24 2016-07-26 Macronix International Co., Ltd. Sacrificial spin-on glass for air gap formation after bl isolation process in single gate vertical channel 3D NAND flash
US9818693B2 (en) * 2015-12-22 2017-11-14 Sandisk Technologies Llc Through-memory-level via structures for a three-dimensional memory device
US10269620B2 (en) * 2016-02-16 2019-04-23 Sandisk Technologies Llc Multi-tier memory device with through-stack peripheral contact via structures and method of making thereof
US9576967B1 (en) * 2016-06-30 2017-02-21 Sandisk Technologies Llc Method of suppressing epitaxial growth in support openings and three-dimensional memory device containing non-epitaxial support pillars in the support openings
EP3580783B1 (en) 2017-03-08 2024-05-01 Yangtze Memory Technologies Co., Ltd. Through array contact structure of three-dimensional memory device
CN107068687B (zh) * 2017-03-08 2018-10-12 长江存储科技有限责任公司 一种3d nand存储器件及其制造方法
CN106920794B (zh) * 2017-03-08 2018-11-30 长江存储科技有限责任公司 一种3d nand存储器件及其制造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101162721A (zh) 2006-10-11 2008-04-16 三星电子株式会社 具有3-维布置的存储单元的nand快闪存储器件及其制造方法
CN103117282A (zh) 2011-10-24 2013-05-22 爱思开海力士有限公司 三维非易失性存储器件、存储系统及制造方法
US20160163732A1 (en) 2014-12-09 2016-06-09 Joon-Sung LIM Semiconductor devices

Also Published As

Publication number Publication date
US10910397B2 (en) 2021-02-02
CN110114881B (zh) 2020-03-27
WO2018161836A1 (en) 2018-09-13
TWI665785B (zh) 2019-07-11
KR102346409B1 (ko) 2021-12-31
JP6978645B2 (ja) 2021-12-08
JP2023076473A (ja) 2023-06-01
EP3580783B1 (en) 2024-05-01
US11785776B2 (en) 2023-10-10
CN110114881A (zh) 2019-08-09
US20230005950A1 (en) 2023-01-05
US11545505B2 (en) 2023-01-03
JP2021193742A (ja) 2021-12-23
US20200152653A1 (en) 2020-05-14
TW201901932A (zh) 2019-01-01
US10553604B2 (en) 2020-02-04
EP4383982A2 (en) 2024-06-12
KR20190122824A (ko) 2019-10-30
KR20230117633A (ko) 2023-08-08
EP3580783A1 (en) 2019-12-18
US20190043879A1 (en) 2019-02-07
US20210126005A1 (en) 2021-04-29
JP7242791B2 (ja) 2023-03-20
KR20220000956A (ko) 2022-01-04
US20230389323A1 (en) 2023-11-30
EP3580783A4 (en) 2020-11-18
JP2020513164A (ja) 2020-04-30

Similar Documents

Publication Publication Date Title
KR102561732B1 (ko) 3차원 메모리 장치의 쓰루 어레이 컨택 구조
KR102271600B1 (ko) 3차원 메모리 장치의 하이브리드 본딩 컨택 구조
JP7371143B2 (ja) ３次元メモリデバイスの相互接続構造

Legal Events

Date Code Title Description
A107 Divisional application of patent
E902 Notification of reason for refusal
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant