KR102217907B1 - 표시 장치 - Google Patents
표시 장치 Download PDFInfo
- Publication number
- KR102217907B1 KR102217907B1 KR1020197022115A KR20197022115A KR102217907B1 KR 102217907 B1 KR102217907 B1 KR 102217907B1 KR 1020197022115 A KR1020197022115 A KR 1020197022115A KR 20197022115 A KR20197022115 A KR 20197022115A KR 102217907 B1 KR102217907 B1 KR 102217907B1
- Authority
- KR
- South Korea
- Prior art keywords
- oxide semiconductor
- signal
- layer
- display device
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
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- H01L27/1225—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0404—Matrix technologies
- G09G2300/0408—Integration of the drivers onto the display substrate
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/043—Preventing or counteracting the effects of ageing
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
- G09G2330/021—Power management, e.g. power saving
- G09G2330/022—Power management, e.g. power saving in absence of operation, e.g. no data being entered during a predetermined time
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2340/00—Aspects of display data processing
- G09G2340/04—Changes in size, position or resolution of an image
- G09G2340/0407—Resolution change, inclusive of the use of different resolutions for different screen areas
- G09G2340/0435—Change or adaptation of the frame rate of the video stream
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2360/00—Aspects of the architecture of display systems
- G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Controls And Circuits For Display Device (AREA)
- Power Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020217004408A KR102257147B1 (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 및 휴대 전화기 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010010250 | 2010-01-20 | ||
| JPJP-P-2010-010250 | 2010-01-20 | ||
| PCT/JP2010/073660 WO2011089833A1 (en) | 2010-01-20 | 2010-12-21 | Display device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187026029A Division KR20180102702A (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020217004408A Division KR102257147B1 (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 및 휴대 전화기 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20190091383A KR20190091383A (ko) | 2019-08-05 |
| KR102217907B1 true KR102217907B1 (ko) | 2021-02-19 |
Family
ID=44277280
Family Applications (11)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020227021885A Active KR102479269B1 (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 및 휴대 전화기 |
| KR1020187026029A Ceased KR20180102702A (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 |
| KR1020217004408A Active KR102257147B1 (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 및 휴대 전화기 |
| KR1020177006325A Ceased KR20170029654A (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 |
| KR1020197022115A Active KR102217907B1 (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 |
| KR1020217035796A Active KR102415143B1 (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 및 휴대 전화기 |
| KR1020217015382A Active KR102323314B1 (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 및 휴대 전화기 |
| KR1020217002175A Active KR102253973B1 (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 |
| KR1020207018613A Active KR102208565B1 (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 |
| KR1020127019429A Active KR101803987B1 (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 |
| KR1020187001627A Active KR102129540B1 (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 |
Family Applications Before (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020227021885A Active KR102479269B1 (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 및 휴대 전화기 |
| KR1020187026029A Ceased KR20180102702A (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 |
| KR1020217004408A Active KR102257147B1 (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 및 휴대 전화기 |
| KR1020177006325A Ceased KR20170029654A (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 |
Family Applications After (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020217035796A Active KR102415143B1 (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 및 휴대 전화기 |
| KR1020217015382A Active KR102323314B1 (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 및 휴대 전화기 |
| KR1020217002175A Active KR102253973B1 (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 |
| KR1020207018613A Active KR102208565B1 (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 |
| KR1020127019429A Active KR101803987B1 (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 |
| KR1020187001627A Active KR102129540B1 (ko) | 2010-01-20 | 2010-12-21 | 표시 장치 |
Country Status (6)
| Country | Link |
|---|---|
| US (8) | US8957881B2 (enExample) |
| JP (11) | JP5027313B2 (enExample) |
| KR (11) | KR102479269B1 (enExample) |
| CN (1) | CN102714024B (enExample) |
| TW (3) | TWI508038B (enExample) |
| WO (1) | WO2011089833A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102479269B1 (ko) * | 2010-01-20 | 2022-12-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 휴대 전화기 |
| US9362820B2 (en) | 2010-10-07 | 2016-06-07 | Semiconductor Energy Laboratory Co., Ltd. | DCDC converter, semiconductor device, and power generation device |
| US8810561B2 (en) * | 2011-05-02 | 2014-08-19 | Microvision, Inc. | Dual laser drive method. apparatus, and system |
| KR102037899B1 (ko) * | 2011-12-23 | 2019-10-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 신호 변환 회로, 표시 장치, 및 전자 기기 |
| JP5758825B2 (ja) * | 2012-03-15 | 2015-08-05 | 株式会社ジャパンディスプレイ | 表示装置、表示方法、および電子機器 |
| US9535277B2 (en) * | 2012-09-05 | 2017-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Conductive oxide film, display device, and method for forming conductive oxide film |
| EP2897123A4 (en) | 2012-09-13 | 2015-08-12 | Sharp Kk | Liquid crystal display device |
| DE102013226167A1 (de) * | 2013-12-17 | 2015-06-18 | Lemförder Electronic GmbH | Verfahren und Vorrichtung zum Versetzen einer elektronischen Anzeigevorrichtung in einen sicheren Zustand und Steuervorrichtung zum Steuern einer elektronischen Anzeigevorrichtung |
| US20150255029A1 (en) * | 2014-03-07 | 2015-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module including the display device, and electronic device including the display device or the display module |
| JP6739185B2 (ja) | 2015-02-26 | 2020-08-12 | 株式会社半導体エネルギー研究所 | ストレージシステム、およびストレージ制御回路 |
| TWI686692B (zh) * | 2018-12-21 | 2020-03-01 | 緯穎科技服務股份有限公司 | 電源控制方法及其相關電腦系統 |
| EP4246714A4 (en) * | 2021-04-05 | 2024-07-03 | Samsung Electronics Co., Ltd. | ANTENNA AND ELECTRONIC DEVICE |
Family Cites Families (191)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5027313B2 (enExample) | 1971-11-15 | 1975-09-06 | ||
| JPS532816Y2 (enExample) | 1973-07-03 | 1978-01-25 | ||
| JPS5146970B2 (enExample) | 1973-07-13 | 1976-12-11 | ||
| JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
| JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
| JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
| JP3019632B2 (ja) * | 1992-10-16 | 2000-03-13 | カシオ計算機株式会社 | フォトセンサシステム及びその駆動方法 |
| US5598565A (en) | 1993-12-29 | 1997-01-28 | Intel Corporation | Method and apparatus for screen power saving |
| JPH08264764A (ja) | 1995-03-22 | 1996-10-11 | Toshiba Corp | 半導体装置 |
| JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
| JPH0926832A (ja) * | 1995-07-07 | 1997-01-28 | Seiko Epson Corp | 情報処理装置および処理方法 |
| EP0820644B1 (en) | 1995-08-03 | 2005-08-24 | Koninklijke Philips Electronics N.V. | Semiconductor device provided with transparent switching element |
| JPH0993517A (ja) * | 1995-09-22 | 1997-04-04 | Toshiba Corp | 液晶表示装置 |
| JP3074640B2 (ja) * | 1995-12-22 | 2000-08-07 | インターナショナル・ビジネス・マシーンズ・コーポレ−ション | 液晶表示装置の駆動方法 |
| JP3625598B2 (ja) * | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
| JPH113063A (ja) * | 1997-06-10 | 1999-01-06 | Toshiba Corp | 情報処理装置及び表示制御方法 |
| JPH11202841A (ja) * | 1998-01-12 | 1999-07-30 | Victor Co Of Japan Ltd | 多相化された画像信号によって表示が行なわれる液晶表示装置に対する多相化された画像信号の供給装置 |
| JPH11202842A (ja) * | 1998-01-16 | 1999-07-30 | Nec Home Electron Ltd | 液晶ディスプレイ装置 |
| JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
| JP2000150861A (ja) * | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
| JP3276930B2 (ja) * | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
| JP2001007342A (ja) * | 1999-04-20 | 2001-01-12 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| TW460731B (en) * | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
| JP4058888B2 (ja) | 1999-11-29 | 2008-03-12 | セイコーエプソン株式会社 | Ram内蔵ドライバ並びにそれを用いた表示ユニットおよび電子機器 |
| JP3659139B2 (ja) | 1999-11-29 | 2005-06-15 | セイコーエプソン株式会社 | Ram内蔵ドライバ並びにそれを用いた表示ユニットおよび電子機器 |
| JP2001257350A (ja) | 2000-03-08 | 2001-09-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| CN1220098C (zh) * | 2000-04-28 | 2005-09-21 | 夏普株式会社 | 显示器件、显示器件驱动方法和装有显示器件的电子设备 |
| JP3766926B2 (ja) | 2000-04-28 | 2006-04-19 | シャープ株式会社 | 表示装置の駆動方法およびそれを用いた表示装置ならびに携帯機器 |
| JP4212791B2 (ja) * | 2000-08-09 | 2009-01-21 | シャープ株式会社 | 液晶表示装置ならびに携帯電子機器 |
| JP2002140052A (ja) * | 2000-08-23 | 2002-05-17 | Semiconductor Energy Lab Co Ltd | 携帯情報装置及びその駆動方法 |
| JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
| JP2008233925A (ja) | 2000-10-05 | 2008-10-02 | Sharp Corp | 表示装置の駆動方法、それを用いた表示装置、およびその表示装置を搭載した携帯機器 |
| KR20020038482A (ko) * | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
| JP2002238894A (ja) * | 2001-02-15 | 2002-08-27 | Olympus Optical Co Ltd | 超音波診断装置 |
| JP3997731B2 (ja) * | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
| JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
| JP3754635B2 (ja) * | 2001-07-17 | 2006-03-15 | Necディスプレイソリューションズ株式会社 | ディスプレイモニタ用入力チャンネル切替制御装置およびディスプレイモニタの入力チャンネル切替制御方法 |
| EP1420437A4 (en) * | 2001-07-25 | 2006-02-08 | Seiko Epson Corp | PROCESS FOR PRODUCING SEMICONDUCTOR FINE FILM, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT, ELECTROOPTIC DEVICE, AND ELECTRONIC APPARATUS |
| JP4090716B2 (ja) * | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
| JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
| JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
| WO2003040441A1 (fr) * | 2001-11-05 | 2003-05-15 | Japan Science And Technology Agency | Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin |
| JP2003162267A (ja) * | 2001-11-29 | 2003-06-06 | Seiko Epson Corp | 表示駆動回路、電気光学装置、電子機器及び表示駆動方法 |
| WO2003056541A1 (en) | 2001-12-27 | 2003-07-10 | Renesas Technology Corp. | Display drive control system |
| JP4083486B2 (ja) * | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
| CN1445821A (zh) * | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
| JP3933591B2 (ja) * | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
| US7339187B2 (en) * | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
| JP2004022625A (ja) * | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
| US7105868B2 (en) * | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
| CN1466120A (zh) * | 2002-07-02 | 2004-01-07 | 明基电通股份有限公司 | 液晶显示器的电源管理系统 |
| US7139533B2 (en) * | 2002-09-24 | 2006-11-21 | Hitachi, Ltd. | Mobile communication terminal |
| US7067843B2 (en) * | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
| JP2004151222A (ja) * | 2002-10-29 | 2004-05-27 | Sharp Corp | 液晶表示制御装置および液晶表示装置 |
| JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
| JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
| JP4108633B2 (ja) * | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
| US7262463B2 (en) * | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
| JP5105694B2 (ja) * | 2003-12-24 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 表示装置及び電子機器 |
| US7507617B2 (en) * | 2003-12-25 | 2009-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2005210707A (ja) * | 2003-12-26 | 2005-08-04 | Sharp Corp | 表示装置、テレビジョン受信機、画像表示制御方法及び画像表示制御処理プログラム |
| US7446742B2 (en) * | 2004-01-30 | 2008-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US7145174B2 (en) * | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
| CN1998087B (zh) | 2004-03-12 | 2014-12-31 | 独立行政法人科学技术振兴机构 | 非晶形氧化物和薄膜晶体管 |
| US7297977B2 (en) * | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
| US7282782B2 (en) * | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
| JP2005292707A (ja) * | 2004-04-05 | 2005-10-20 | Seiko Epson Corp | 表示装置 |
| US7211825B2 (en) * | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
| JP2006011074A (ja) * | 2004-06-25 | 2006-01-12 | Seiko Epson Corp | 表示コントローラ、電子機器及び画像データ供給方法 |
| JP2006030566A (ja) | 2004-07-15 | 2006-02-02 | Tohoku Pioneer Corp | 表示パネルを備えた電子機器 |
| JP2006053678A (ja) * | 2004-08-10 | 2006-02-23 | Toshiba Corp | ユニバーサルヒューマンインタフェースを有する電子機器 |
| JP2006100760A (ja) * | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
| US7285501B2 (en) * | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
| US8159478B2 (en) * | 2004-09-27 | 2012-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device using the same |
| KR100598594B1 (ko) * | 2004-10-07 | 2006-07-07 | 주식회사 애트랩 | 터치센서를 구비하는 휴먼 입력 장치 및 이 장치의 움직임값 계산 방법 |
| US7298084B2 (en) * | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
| US7453065B2 (en) * | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
| US7868326B2 (en) * | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
| US7829444B2 (en) * | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
| US7863611B2 (en) * | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
| KR20070085879A (ko) * | 2004-11-10 | 2007-08-27 | 캐논 가부시끼가이샤 | 발광 장치 |
| US7791072B2 (en) * | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
| CA2585190A1 (en) * | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
| US7579224B2 (en) * | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
| TWI472037B (zh) * | 2005-01-28 | 2015-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
| TWI569441B (zh) * | 2005-01-28 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
| US7858451B2 (en) * | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
| US7948171B2 (en) * | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US20060197092A1 (en) * | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
| US8681077B2 (en) * | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
| US7544967B2 (en) * | 2005-03-28 | 2009-06-09 | Massachusetts Institute Of Technology | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
| US7645478B2 (en) * | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
| US8300031B2 (en) * | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
| JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
| US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7402506B2 (en) * | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
| ES2402201T3 (es) | 2005-07-12 | 2013-04-29 | Mitsubishi Electric Corporation | Sistema de control de suministro de información de vídeo instalado en un tren |
| KR100711890B1 (ko) * | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
| JP2007059128A (ja) * | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
| JP4850457B2 (ja) * | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
| JP2007073705A (ja) * | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
| JP4280736B2 (ja) * | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
| JP5116225B2 (ja) * | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
| JP5064747B2 (ja) * | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
| EP1998373A3 (en) | 2005-09-29 | 2012-10-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| JP5078246B2 (ja) * | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| JP5037808B2 (ja) * | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
| US7524713B2 (en) * | 2005-11-09 | 2009-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| WO2007058329A1 (en) * | 2005-11-15 | 2007-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| TWI292281B (en) * | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
| US7867636B2 (en) * | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
| JP4977478B2 (ja) * | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
| JP4288355B2 (ja) * | 2006-01-31 | 2009-07-01 | 国立大学法人北陸先端科学技術大学院大学 | 三値論理関数回路 |
| US7576394B2 (en) * | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
| US7977169B2 (en) * | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
| JP5015473B2 (ja) * | 2006-02-15 | 2012-08-29 | 財団法人高知県産業振興センター | 薄膜トランジスタアレイ及びその製法 |
| JP2007225873A (ja) * | 2006-02-23 | 2007-09-06 | Hitachi Displays Ltd | 画像表示装置 |
| JP4713427B2 (ja) | 2006-03-30 | 2011-06-29 | エルジー ディスプレイ カンパニー リミテッド | 液晶表示装置の駆動装置及び方法 |
| TWI603307B (zh) | 2006-04-05 | 2017-10-21 | 半導體能源研究所股份有限公司 | 半導體裝置,顯示裝置,和電子裝置 |
| JP5508664B2 (ja) * | 2006-04-05 | 2014-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置及び電子機器 |
| KR20070101595A (ko) * | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
| US20070252928A1 (en) * | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
| JP2008009383A (ja) | 2006-05-30 | 2008-01-17 | Toshiba Corp | 液晶表示装置及びその駆動方法 |
| EP2025004A1 (en) * | 2006-06-02 | 2009-02-18 | Kochi Industrial Promotion Center | Semiconductor device including an oxide semiconductor thin film layer of zinc oxide and manufacturing method thereof |
| JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| JP4363419B2 (ja) * | 2006-06-30 | 2009-11-11 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| US7906415B2 (en) * | 2006-07-28 | 2011-03-15 | Xerox Corporation | Device having zinc oxide semiconductor and indium/zinc electrode |
| JP4999400B2 (ja) * | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| JP4609797B2 (ja) * | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
| JP4946286B2 (ja) * | 2006-09-11 | 2012-06-06 | 凸版印刷株式会社 | 薄膜トランジスタアレイ、それを用いた画像表示装置およびその駆動方法 |
| JP4332545B2 (ja) * | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
| JP4274219B2 (ja) * | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
| JP5164357B2 (ja) * | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
| US7622371B2 (en) * | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
| US7511343B2 (en) * | 2006-10-12 | 2009-03-31 | Xerox Corporation | Thin film transistor |
| JP5216204B2 (ja) * | 2006-10-31 | 2013-06-19 | 株式会社半導体エネルギー研究所 | 液晶表示装置及びその作製方法 |
| US7772021B2 (en) * | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
| JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
| JP5305630B2 (ja) * | 2006-12-05 | 2013-10-02 | キヤノン株式会社 | ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法 |
| US8451279B2 (en) * | 2006-12-13 | 2013-05-28 | Nvidia Corporation | System, method and computer program product for adjusting a refresh rate of a display |
| KR101303578B1 (ko) * | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
| US8207063B2 (en) * | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
| KR101312259B1 (ko) * | 2007-02-09 | 2013-09-25 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조방법 |
| KR100851215B1 (ko) * | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
| JP4727684B2 (ja) * | 2007-03-27 | 2011-07-20 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよびそれを用いた表示装置 |
| US7795613B2 (en) * | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
| KR101325053B1 (ko) * | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
| KR20080094300A (ko) * | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
| KR101334181B1 (ko) * | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
| CN101663762B (zh) * | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
| US8289312B2 (en) * | 2007-05-11 | 2012-10-16 | Sharp Kabushiki Kaisha | Liquid crystal display device |
| KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
| JP2009031750A (ja) * | 2007-06-28 | 2009-02-12 | Fujifilm Corp | 有機el表示装置およびその製造方法 |
| US20090001881A1 (en) | 2007-06-28 | 2009-01-01 | Masaya Nakayama | Organic el display and manufacturing method thereof |
| TWI453915B (zh) * | 2007-09-10 | 2014-09-21 | Idemitsu Kosan Co | Thin film transistor |
| JP5314870B2 (ja) * | 2007-09-21 | 2013-10-16 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
| US20090078940A1 (en) * | 2007-09-26 | 2009-03-26 | Sharp Laboratories Of America, Inc. | Location-controlled crystal seeding |
| KR101563692B1 (ko) * | 2007-10-19 | 2015-10-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그 구동 방법 |
| WO2009063797A1 (en) * | 2007-11-14 | 2009-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US7982216B2 (en) | 2007-11-15 | 2011-07-19 | Fujifilm Corporation | Thin film field effect transistor with amorphous oxide active layer and display using the same |
| US8319214B2 (en) | 2007-11-15 | 2012-11-27 | Fujifilm Corporation | Thin film field effect transistor with amorphous oxide active layer and display using the same |
| JP5213422B2 (ja) * | 2007-12-04 | 2013-06-19 | キヤノン株式会社 | 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置 |
| JP5215158B2 (ja) * | 2007-12-17 | 2013-06-19 | 富士フイルム株式会社 | 無機結晶性配向膜及びその製造方法、半導体デバイス |
| JP2009177149A (ja) * | 2007-12-26 | 2009-08-06 | Konica Minolta Holdings Inc | 金属酸化物半導体とその製造方法および薄膜トランジスタ |
| KR101425131B1 (ko) * | 2008-01-15 | 2014-07-31 | 삼성디스플레이 주식회사 | 표시 기판 및 이를 포함하는 표시 장치 |
| JP4770844B2 (ja) * | 2008-02-18 | 2011-09-14 | ソニー株式会社 | センシング装置、表示装置および電子機器 |
| KR20090089254A (ko) * | 2008-02-18 | 2009-08-21 | 세이코 엡슨 가부시키가이샤 | 센싱 장치, 표시 장치, 전자 기기 및, 센싱 방법 |
| JP5129656B2 (ja) * | 2008-06-04 | 2013-01-30 | 株式会社ジャパンディスプレイイースト | 画像表示装置 |
| KR20090126766A (ko) * | 2008-06-05 | 2009-12-09 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
| KR101548992B1 (ko) * | 2008-06-10 | 2015-09-01 | 엘지전자 주식회사 | 전자책 단말기 및 그의 스크랩 정보 제공 방법 |
| KR100963027B1 (ko) * | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| JP5584960B2 (ja) * | 2008-07-03 | 2014-09-10 | ソニー株式会社 | 薄膜トランジスタおよび表示装置 |
| KR100975204B1 (ko) * | 2008-08-04 | 2010-08-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| JP5627071B2 (ja) * | 2008-09-01 | 2014-11-19 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4623179B2 (ja) * | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
| JP2010085683A (ja) * | 2008-09-30 | 2010-04-15 | Panasonic Corp | 画像処理装置 |
| JP5451280B2 (ja) * | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
| US8232947B2 (en) * | 2008-11-14 | 2012-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| JP5538797B2 (ja) * | 2008-12-12 | 2014-07-02 | キヤノン株式会社 | 電界効果型トランジスタ及び表示装置 |
| TW201023341A (en) * | 2008-12-12 | 2010-06-16 | Ind Tech Res Inst | Integrated circuit structure |
| US20090106849A1 (en) * | 2008-12-28 | 2009-04-23 | Hengning Wu | Portable Computer |
| KR101034686B1 (ko) * | 2009-01-12 | 2011-05-16 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시 장치 및 그의 제조 방법 |
| JP2010182819A (ja) * | 2009-02-04 | 2010-08-19 | Sony Corp | 薄膜トランジスタおよび表示装置 |
| US8417297B2 (en) * | 2009-05-22 | 2013-04-09 | Lg Electronics Inc. | Mobile terminal and method of providing graphic user interface using the same |
| KR102479269B1 (ko) * | 2010-01-20 | 2022-12-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 휴대 전화기 |
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