KR102196944B1 - 콜로이달 실리카 성장 억제제와 관련 방법 및 시스템 - Google Patents

콜로이달 실리카 성장 억제제와 관련 방법 및 시스템 Download PDF

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Publication number
KR102196944B1
KR102196944B1 KR1020187031140A KR20187031140A KR102196944B1 KR 102196944 B1 KR102196944 B1 KR 102196944B1 KR 1020187031140 A KR1020187031140 A KR 1020187031140A KR 20187031140 A KR20187031140 A KR 20187031140A KR 102196944 B1 KR102196944 B1 KR 102196944B1
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colloidal silica
concentration
growth inhibitor
phosphoric acid
wet etching
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KR20180121793A (ko
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안토니오 엘. 피. 로톤다로
월리스 피. 프린츠
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020187031140A 2016-03-30 2017-03-24 콜로이달 실리카 성장 억제제와 관련 방법 및 시스템 Active KR102196944B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US201662315632P 2016-03-30 2016-03-30
US201662315559P 2016-03-30 2016-03-30
US62/315,632 2016-03-30
US62/315,559 2016-03-30
US15/467,939 US10325779B2 (en) 2016-03-30 2017-03-23 Colloidal silica growth inhibitor and associated method and system
US15/467,939 2017-03-23
US15/467,973 US10515820B2 (en) 2016-03-30 2017-03-23 Process and apparatus for processing a nitride structure without silica deposition
US15/467,973 2017-03-23
PCT/US2017/024123 WO2017172532A1 (en) 2016-03-30 2017-03-24 Colloidal silica growth inhibitor and associated method and system

Publications (2)

Publication Number Publication Date
KR20180121793A KR20180121793A (ko) 2018-11-08
KR102196944B1 true KR102196944B1 (ko) 2020-12-30

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KR1020187031140A Active KR102196944B1 (ko) 2016-03-30 2017-03-24 콜로이달 실리카 성장 억제제와 관련 방법 및 시스템
KR1020207025916A Active KR102353264B1 (ko) 2016-03-30 2017-03-24 실리카 퇴적 없이 질화물 구조물을 처리하는 방법 및 장치
KR1020187031146A Active KR102172305B1 (ko) 2016-03-30 2017-03-24 실리카 퇴적 없이 질화물 구조물을 처리하는 방법 및 장치

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KR1020207025916A Active KR102353264B1 (ko) 2016-03-30 2017-03-24 실리카 퇴적 없이 질화물 구조물을 처리하는 방법 및 장치
KR1020187031146A Active KR102172305B1 (ko) 2016-03-30 2017-03-24 실리카 퇴적 없이 질화물 구조물을 처리하는 방법 및 장치

Country Status (7)

Country Link
US (2) US10325779B2 (https=)
JP (3) JP6942318B2 (https=)
KR (3) KR102196944B1 (https=)
CN (2) CN109072077B (https=)
SG (2) SG11201808542WA (https=)
TW (3) TWI655274B (https=)
WO (2) WO2017172533A1 (https=)

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US10325779B2 (en) * 2016-03-30 2019-06-18 Tokyo Electron Limited Colloidal silica growth inhibitor and associated method and system
JP6909620B2 (ja) * 2017-04-20 2021-07-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
TWI815932B (zh) * 2018-07-20 2023-09-21 日商東京威力科創股份有限公司 3d nand結構中的矽氮化物蝕刻及氧化矽沉積控制
CN109216367B (zh) * 2018-08-27 2021-07-02 长江存储科技有限责任公司 半导体结构的形成方法
KR102084044B1 (ko) * 2018-12-24 2020-03-03 주식회사 세미부스터 인산용액 중의 실리콘 농도 분석방법
KR102759372B1 (ko) * 2019-01-08 2025-01-24 삼성전자주식회사 실리콘 질화물용 식각제 조성물 및 반도체 소자의 제조 방법
JP7209556B2 (ja) * 2019-02-05 2023-01-20 東京エレクトロン株式会社 基板処理方法および基板処理装置
SG11202109069WA (en) * 2019-02-20 2021-09-29 Weimin Li Need for si3n4 selective removal by wet chemistry
JP2020150126A (ja) * 2019-03-13 2020-09-17 東京エレクトロン株式会社 混合装置、混合方法および基板処理システム
JP6843173B2 (ja) * 2019-03-29 2021-03-17 東京エレクトロン株式会社 基板処理装置、および基板処理方法
KR20210007097A (ko) * 2019-07-10 2021-01-20 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
JP7336956B2 (ja) * 2019-10-10 2023-09-01 東京エレクトロン株式会社 基板処理システム、及び基板処理方法
KR102583556B1 (ko) * 2021-01-07 2023-10-10 세메스 주식회사 처리액 공급 장치 및 처리액 공급 장치의 고형 제거 방법
KR102315919B1 (ko) * 2021-01-26 2021-10-22 연세대학교 산학협력단 비인산계 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법
JP7634387B2 (ja) * 2021-03-02 2025-02-21 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7641406B2 (ja) * 2021-05-12 2025-03-06 インテグリス・インコーポレーテッド 選択的エッチャント組成物および方法
KR102449897B1 (ko) 2022-01-14 2022-09-30 삼성전자주식회사 습식 식각 방법 및 이를 이용한 반도체 소자 제조 방법.
CN117954340B (zh) * 2024-01-10 2024-08-02 苏州恩腾半导体科技有限公司 一种选择性蚀刻方法及装置

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