KR102112367B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR102112367B1
KR102112367B1 KR1020140014880A KR20140014880A KR102112367B1 KR 102112367 B1 KR102112367 B1 KR 102112367B1 KR 1020140014880 A KR1020140014880 A KR 1020140014880A KR 20140014880 A KR20140014880 A KR 20140014880A KR 102112367 B1 KR102112367 B1 KR 102112367B1
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South Korea
Prior art keywords
stage
transistor
node
drain
memory circuit
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Expired - Fee Related
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Korean (ko)
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KR20140101688A (ko
Inventor
요시유키 구로카와
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30—Accessing single arrays
    • G11C29/32—Serial access; Scan testing

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Shift Register Type Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020140014880A 2013-02-12 2014-02-10 반도체 장치 Expired - Fee Related KR102112367B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-024732 2013-02-12
JP2013024732 2013-02-12

Publications (2)

Publication Number Publication Date
KR20140101688A KR20140101688A (ko) 2014-08-20
KR102112367B1 true KR102112367B1 (ko) 2020-05-18

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Family Applications (1)

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KR1020140014880A Expired - Fee Related KR102112367B1 (ko) 2013-02-12 2014-02-10 반도체 장치

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US (1) US9064596B2 (enExample)
JP (1) JP6246608B2 (enExample)
KR (1) KR102112367B1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102581808B1 (ko) * 2014-12-18 2023-09-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 센서 장치, 및 전자 기기
US10177142B2 (en) * 2015-12-25 2019-01-08 Semiconductor Energy Laboratory Co., Ltd. Circuit, logic circuit, processor, electronic component, and electronic device
US20170365209A1 (en) * 2016-06-17 2017-12-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
TWI726026B (zh) * 2016-06-27 2021-05-01 日商半導體能源硏究所股份有限公司 電晶體以及半導體裝置
KR102420735B1 (ko) 2016-08-19 2022-07-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 전원 제어 방법
JP2018060277A (ja) * 2016-10-03 2018-04-12 ソニー株式会社 半導体回路、半導体回路の制御方法、および電子機器
JP6878071B2 (ja) 2017-03-21 2021-05-26 株式会社東芝 半導体集積回路及び半導体集積回路の診断方法

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