KR102090650B1 - 드라이 에칭 방법 - Google Patents

드라이 에칭 방법 Download PDF

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Publication number
KR102090650B1
KR102090650B1 KR1020187004417A KR20187004417A KR102090650B1 KR 102090650 B1 KR102090650 B1 KR 102090650B1 KR 1020187004417 A KR1020187004417 A KR 1020187004417A KR 20187004417 A KR20187004417 A KR 20187004417A KR 102090650 B1 KR102090650 B1 KR 102090650B1
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dry etching
etching
volume
etching method
layer
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KR20180030145A (ko
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히로유키 오모리
아키후미 야오
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샌트랄 글래스 컴퍼니 리미티드
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    • H01L21/3065—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H01L21/31116—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020187004417A 2015-08-12 2016-07-01 드라이 에칭 방법 Active KR102090650B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2015159517 2015-08-12
JPJP-P-2015-159517 2015-08-12
JP2015172721 2015-09-02
JPJP-P-2015-172721 2015-09-02
PCT/JP2016/069569 WO2017026197A1 (ja) 2015-08-12 2016-07-01 ドライエッチング方法

Publications (2)

Publication Number Publication Date
KR20180030145A KR20180030145A (ko) 2018-03-21
KR102090650B1 true KR102090650B1 (ko) 2020-03-18

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KR1020187004417A Active KR102090650B1 (ko) 2015-08-12 2016-07-01 드라이 에칭 방법

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US (1) US10741406B2 (https=)
JP (1) JP6327295B2 (https=)
KR (1) KR102090650B1 (https=)
CN (2) CN114512399B (https=)
TW (1) TWI648783B (https=)
WO (1) WO2017026197A1 (https=)

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JP7261159B2 (ja) * 2017-06-08 2023-04-19 株式会社レゾナック エッチング方法
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CN107665829B (zh) 2017-08-24 2019-12-17 长江存储科技有限责任公司 晶圆混合键合中提高金属引线制程安全性的方法
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JP7181734B2 (ja) * 2017-09-01 2022-12-01 東京エレクトロン株式会社 エッチング方法
US10586710B2 (en) * 2017-09-01 2020-03-10 Tokyo Electron Limited Etching method
JP2019050305A (ja) 2017-09-11 2019-03-28 東芝メモリ株式会社 プラズマエッチング方法、及び、半導体装置の製造方法
JP7310608B2 (ja) 2017-11-02 2023-07-19 株式会社レゾナック エッチング方法及び半導体の製造方法
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JP7158252B2 (ja) * 2018-02-15 2022-10-21 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
CN118588548A (zh) * 2018-03-16 2024-09-03 朗姆研究公司 在电介质中的高深宽比特征的等离子体蚀刻化学过程
US20190362983A1 (en) * 2018-05-23 2019-11-28 Applied Materials, Inc. Systems and methods for etching oxide nitride stacks
TWI804638B (zh) * 2018-06-22 2023-06-11 日商關東電化工業股份有限公司 使用含硫原子之氣體分子之電漿蝕刻方法
KR102272823B1 (ko) * 2018-07-30 2021-07-02 도쿄엘렉트론가부시키가이샤 에칭 방법 및 에칭 장치
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JP7277225B2 (ja) * 2019-04-08 2023-05-18 東京エレクトロン株式会社 エッチング方法、及び、プラズマ処理装置
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CN112786441B (zh) 2019-11-08 2026-01-23 东京毅力科创株式会社 蚀刻方法及等离子体处理装置
KR102723916B1 (ko) 2019-11-08 2024-10-31 도쿄엘렉트론가부시키가이샤 에칭 방법
WO2021090516A1 (ja) 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法
CN111154490A (zh) * 2020-01-02 2020-05-15 长江存储科技有限责任公司 刻蚀气体、刻蚀方法及3d存储器件制造方法
WO2021171458A1 (ja) 2020-02-27 2021-09-02 株式会社日立ハイテク プラズマ処理方法
WO2021205632A1 (ja) * 2020-04-10 2021-10-14 株式会社日立ハイテク エッチング方法
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JP7524003B2 (ja) * 2020-05-29 2024-07-29 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
TW202245053A (zh) * 2021-03-31 2022-11-16 日商東京威力科創股份有限公司 蝕刻方法及蝕刻處理裝置
JP7653327B2 (ja) * 2021-03-31 2025-03-28 東京エレクトロン株式会社 エッチング方法及びエッチング処理装置
JP2022159653A (ja) * 2021-04-05 2022-10-18 東京エレクトロン株式会社 エッチング方法及びエッチング処理装置
JP7700221B2 (ja) * 2021-05-07 2025-06-30 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR20240006574A (ko) * 2021-05-07 2024-01-15 도쿄엘렉트론가부시키가이샤 에칭 방법
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Also Published As

Publication number Publication date
JP2017050529A (ja) 2017-03-09
KR20180030145A (ko) 2018-03-21
CN107924837A (zh) 2018-04-17
TWI648783B (zh) 2019-01-21
JP6327295B2 (ja) 2018-05-23
CN114512399B (zh) 2025-06-24
TW201709321A (zh) 2017-03-01
US10741406B2 (en) 2020-08-11
CN114512399A (zh) 2022-05-17
WO2017026197A1 (ja) 2017-02-16
US20180204728A1 (en) 2018-07-19
CN107924837B (zh) 2022-02-01

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