KR101702413B1 - 최적 극 자외광 출력을 위해 타겟 물질을 정렬 및 동기화하기 위한 시스템, 방법 및 장치 - Google Patents

최적 극 자외광 출력을 위해 타겟 물질을 정렬 및 동기화하기 위한 시스템, 방법 및 장치 Download PDF

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KR101702413B1
KR101702413B1 KR1020117026713A KR20117026713A KR101702413B1 KR 101702413 B1 KR101702413 B1 KR 101702413B1 KR 1020117026713 A KR1020117026713 A KR 1020117026713A KR 20117026713 A KR20117026713 A KR 20117026713A KR 101702413 B1 KR101702413 B1 KR 101702413B1
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target material
drive laser
reflected
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euv
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KR20120005506A (ko
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크리스토퍼 피. 크로백
윌리암 엔. 팔트로
이고르 브이. 포멘코프
알렉산더 아이. 어쇼프
제임스 에이치. 크로우치
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에이에스엠엘 네델란즈 비.브이.
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H05G2/0025—Systems for collecting the plasma generating material after the plasma generation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020117026713A 2009-04-09 2010-03-31 최적 극 자외광 출력을 위해 타겟 물질을 정렬 및 동기화하기 위한 시스템, 방법 및 장치 Active KR101702413B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US16801209P 2009-04-09 2009-04-09
US16800009P 2009-04-09 2009-04-09
US16803309P 2009-04-09 2009-04-09
US61/168,012 2009-04-09
US61/168,033 2009-04-09
US61/168,000 2009-04-09
US12/725,178 2010-03-16
US12/725,178 US8653491B2 (en) 2009-04-09 2010-03-16 System, method and apparatus for aligning and synchronizing target material for optimum extreme ultraviolet light output
PCT/US2010/029447 WO2010117861A1 (en) 2009-04-09 2010-03-31 System, method and apparatus for aligning and synchronizing target material for optimum extreme ultraviolet light output

Publications (2)

Publication Number Publication Date
KR20120005506A KR20120005506A (ko) 2012-01-16
KR101702413B1 true KR101702413B1 (ko) 2017-02-03

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KR1020117026713A Active KR101702413B1 (ko) 2009-04-09 2010-03-31 최적 극 자외광 출력을 위해 타겟 물질을 정렬 및 동기화하기 위한 시스템, 방법 및 장치
KR1020117026586A Active KR101618143B1 (ko) 2009-04-09 2010-03-31 Ｅｕｖ 생성 챔버에서 백스플래시를 방지하기 위한 액적 캐처용 시스템, 방법 및 장치
KR1020117026585A Active KR101627586B1 (ko) 2009-04-09 2010-03-31 뜨거운 벽과 차가운 콜렉터 미러를 가진 레이저 산출 플라즈마 극 자외선 챔버용 시스템, 방법 및 장치

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020117026586A Active KR101618143B1 (ko) 2009-04-09 2010-03-31 Ｅｕｖ 생성 챔버에서 백스플래시를 방지하기 위한 액적 캐처용 시스템, 방법 및 장치
KR1020117026585A Active KR101627586B1 (ko) 2009-04-09 2010-03-31 뜨거운 벽과 차가운 콜렉터 미러를 가진 레이저 산출 플라즈마 극 자외선 챔버용 시스템, 방법 및 장치

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US (5) US8138487B2 (https=)
JP (3) JP5684786B2 (https=)
KR (3) KR101702413B1 (https=)
TW (4) TWI481315B (https=)
WO (3) WO2010117859A1 (https=)

Families Citing this family (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5368261B2 (ja) * 2008-11-06 2013-12-18 ギガフォトン株式会社 極端紫外光源装置、極端紫外光源装置の制御方法
US8283643B2 (en) * 2008-11-24 2012-10-09 Cymer, Inc. Systems and methods for drive laser beam delivery in an EUV light source
JP5455661B2 (ja) * 2009-01-29 2014-03-26 ギガフォトン株式会社 極端紫外光源装置
US8304752B2 (en) * 2009-04-10 2012-11-06 Cymer, Inc. EUV light producing system and method utilizing an alignment laser
WO2011018295A1 (en) * 2009-08-14 2011-02-17 Asml Netherlands B.V. Euv radiation system and lithographic apparatus
JP5765730B2 (ja) * 2010-03-11 2015-08-19 ギガフォトン株式会社 極端紫外光生成装置
US8872142B2 (en) * 2010-03-18 2014-10-28 Gigaphoton Inc. Extreme ultraviolet light generation apparatus
US8648999B2 (en) 2010-07-22 2014-02-11 Cymer, Llc Alignment of light source focus
US8958053B2 (en) * 2010-08-11 2015-02-17 Asml Netherlands B.V. Lithographic apparatus and alignment method
JP5641958B2 (ja) * 2011-01-31 2014-12-17 ギガフォトン株式会社 チャンバ装置およびそれを備える極端紫外光生成装置
JP2012199512A (ja) * 2011-03-10 2012-10-18 Gigaphoton Inc 極端紫外光生成装置及び極端紫外光生成方法
WO2012125647A2 (en) * 2011-03-16 2012-09-20 Kla-Tencor Corporation Euv actinic reticle inspection system using imaging sensor with thin film spectral purity filter coating
JP5964053B2 (ja) * 2011-03-30 2016-08-03 ギガフォトン株式会社 極端紫外光生成装置
US9516730B2 (en) * 2011-06-08 2016-12-06 Asml Netherlands B.V. Systems and methods for buffer gas flow stabilization in a laser produced plasma light source
JP5846572B2 (ja) * 2011-07-27 2016-01-20 ギガフォトン株式会社 チャンバ装置、極端紫外光生成装置および極端紫外光生成装置の制御方法
WO2013023710A1 (en) 2011-08-12 2013-02-21 Asml Netherlands B.V. Radiation source
US8993976B2 (en) * 2011-08-19 2015-03-31 Asml Netherlands B.V. Energy sensors for light beam alignment
KR101938707B1 (ko) 2011-09-02 2019-01-15 에이에스엠엘 네델란즈 비.브이. 디바이스 제조용 리소그래피 장치에 대한 방법 및 방사선 소스
JP5876711B2 (ja) * 2011-11-17 2016-03-02 ギガフォトン株式会社 チャンバ装置および極端紫外光生成装置
DE102011086565A1 (de) 2011-11-17 2012-11-15 Carl Zeiss Smt Gmbh Kollektor
JP6054067B2 (ja) * 2011-11-24 2016-12-27 ギガフォトン株式会社 Ｅｕｖ光生成装置、ターゲット回収装置、および、ターゲット回収方法
JP6125525B2 (ja) * 2011-12-06 2017-05-10 エーエスエムエル ネザーランズ ビー．ブイ． 放射源
TWI596384B (zh) * 2012-01-18 2017-08-21 Ａｓｍｌ荷蘭公司 光源收集器元件、微影裝置及元件製造方法
JP6080481B2 (ja) * 2012-01-26 2017-02-15 ギガフォトン株式会社 極端紫外光生成装置
JP6314257B2 (ja) * 2012-01-26 2018-04-18 ギガフォトン株式会社 極端紫外光生成装置
JP6116593B2 (ja) * 2012-02-08 2017-04-19 エーエスエムエル ネザーランズ ビー．ブイ． 放射源及びリソグラフィ装置
US8598552B1 (en) * 2012-05-31 2013-12-03 Cymer, Inc. System and method to optimize extreme ultraviolet light generation
WO2013189827A2 (en) * 2012-06-22 2013-12-27 Asml Netherlands B.V. Radiation source and lithographic apparatus.
JP6099241B2 (ja) * 2012-06-28 2017-03-22 ギガフォトン株式会社 ターゲット供給装置
WO2014019803A1 (en) * 2012-08-01 2014-02-06 Asml Netherlands B.V. Method and apparatus for generating radiation
US8811440B2 (en) * 2012-09-07 2014-08-19 Asml Netherlands B.V. System and method for seed laser mode stabilization
KR20140036538A (ko) * 2012-09-17 2014-03-26 삼성전자주식회사 극자외선 생성 장치, 이를 포함하는 노광 장치 및 이러한 노광 장치를 사용해서 제조된 전자 디바이스
DE102012217120A1 (de) * 2012-09-24 2014-03-27 Trumpf Laser- Und Systemtechnik Gmbh EUV-Strahlungserzeugungsvorrichtung und Betriebsverfahren dafür
US9238243B2 (en) * 2012-09-28 2016-01-19 Asml Netherlands B.V. System and method to adaptively pre-compensate for target material push-out to optimize extreme ultraviolet light production
US10289006B2 (en) 2012-12-20 2019-05-14 Asml Netherlands B.V. Beam delivery for EUV lithography
US9000403B2 (en) * 2013-02-15 2015-04-07 Asml Netherlands B.V. System and method for adjusting seed laser pulse width to control EUV output energy
US9000405B2 (en) * 2013-03-15 2015-04-07 Asml Netherlands B.V. Beam position control for an extreme ultraviolet light source
KR102115543B1 (ko) * 2013-04-26 2020-05-26 삼성전자주식회사 극자외선 광원 장치
WO2014192872A1 (ja) * 2013-05-31 2014-12-04 ギガフォトン株式会社 極端紫外光生成システム
US9029797B2 (en) * 2013-07-25 2015-05-12 Agilent Technologies, Inc. Plasma-based photon source, ion source, and related systems and methods
US9127981B2 (en) * 2013-08-06 2015-09-08 Cymer, Llc System and method for return beam metrology with optical switch
WO2015029137A1 (ja) * 2013-08-27 2015-03-05 ギガフォトン株式会社 極端紫外光生成装置及び極端紫外光生成システム
US9497840B2 (en) * 2013-09-26 2016-11-15 Asml Netherlands B.V. System and method for creating and utilizing dual laser curtains from a single laser in an LPP EUV light source
US9241395B2 (en) * 2013-09-26 2016-01-19 Asml Netherlands B.V. System and method for controlling droplet timing in an LPP EUV light source
WO2015063825A1 (ja) 2013-10-28 2015-05-07 ギガフォトン株式会社 極端紫外光生成装置
US9301382B2 (en) * 2013-12-02 2016-03-29 Asml Netherlands B.V. Apparatus for and method of source material delivery in a laser produced plasma EUV light source
US10237960B2 (en) * 2013-12-02 2019-03-19 Asml Netherlands B.V. Apparatus for and method of source material delivery in a laser produced plasma EUV light source
WO2015097888A1 (ja) * 2013-12-27 2015-07-02 ギガフォトン株式会社 極端紫外光生成装置
TWI550213B (zh) * 2014-06-20 2016-09-21 Univ Nat Formosa Cam linkage five link mechanism
JP6367941B2 (ja) * 2014-07-11 2018-08-01 ギガフォトン株式会社 極端紫外光生成装置
KR102336300B1 (ko) 2014-11-17 2021-12-07 삼성전자주식회사 극자외선 광원 장치 및 극자외선 광 발생 방법
US20160139032A1 (en) * 2014-11-19 2016-05-19 Kla-Tencor Corporation Inspection system and method using an off-axis unobscured objective lens
US10034362B2 (en) * 2014-12-16 2018-07-24 Kla-Tencor Corporation Plasma-based light source
WO2016135932A1 (ja) 2015-02-26 2016-09-01 ギガフォトン株式会社 極端紫外光生成装置及びターゲット回収器
KR102269695B1 (ko) * 2015-03-19 2021-06-25 삼성전자주식회사 극자외선 광 생성 장치
JP2016181353A (ja) * 2015-03-23 2016-10-13 ウシオ電機株式会社 極端紫外光光源装置及びその廃原料処理方法
US9625824B2 (en) * 2015-04-30 2017-04-18 Taiwan Semiconductor Manufacturing Company, Ltd Extreme ultraviolet lithography collector contamination reduction
WO2017042881A1 (ja) 2015-09-08 2017-03-16 ギガフォトン株式会社 極端紫外光生成装置
WO2017042915A1 (ja) * 2015-09-09 2017-03-16 ギガフォトン株式会社 ターゲット収容装置
KR20170045949A (ko) 2015-10-20 2017-04-28 삼성전자주식회사 플라즈마 광원 장치 및 그 광원 장치를 구비한 광원 시스템
US9888554B2 (en) * 2016-01-21 2018-02-06 Asml Netherlands B.V. System, method and apparatus for target material debris cleaning of EUV vessel and EUV collector
WO2017130346A1 (ja) * 2016-01-28 2017-08-03 ギガフォトン株式会社 極端紫外光生成装置
WO2017145366A1 (ja) * 2016-02-26 2017-08-31 ギガフォトン株式会社 極端紫外光生成装置
WO2017216847A1 (ja) * 2016-06-13 2017-12-21 ギガフォトン株式会社 チャンバ装置及び極端紫外光生成装置
WO2018029863A1 (ja) * 2016-08-12 2018-02-15 ギガフォトン株式会社 ドロップレット検出器及び極端紫外光生成装置
WO2018042563A1 (ja) * 2016-08-31 2018-03-08 ギガフォトン株式会社 ドロップレット回収装置
NL2019788A (en) * 2016-11-14 2018-05-24 Asml Netherlands Bv A fuel collector and associated system
US10937783B2 (en) 2016-11-29 2021-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
WO2018234061A1 (en) 2017-06-23 2018-12-27 Asml Netherlands B.V. Radiation source module and lithographic apparatus
US10149374B1 (en) * 2017-08-25 2018-12-04 Asml Netherlands B.V. Receptacle for capturing material that travels on a material path
US11317500B2 (en) * 2017-08-30 2022-04-26 Kla-Tencor Corporation Bright and clean x-ray source for x-ray based metrology
US10824083B2 (en) * 2017-09-28 2020-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Light source, EUV lithography system, and method for generating EUV radiation
US10880981B2 (en) * 2017-09-29 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Collector pellicle
US20240121878A1 (en) * 2017-11-24 2024-04-11 Isteq Group Holding B.V. High brightness lpp euv light source with fast rotating target and method of cooling thereof
US10959318B2 (en) 2018-01-10 2021-03-23 Kla-Tencor Corporation X-ray metrology system with broadband laser produced plasma illuminator
WO2019146064A1 (ja) 2018-01-26 2019-08-01 ギガフォトン株式会社 極端紫外光生成装置及び電子デバイスの製造方法
WO2019185406A1 (en) * 2018-03-27 2019-10-03 Asml Netherlands B.V. Apparatus for and method of controlling debris in an euv light source
US10631392B2 (en) * 2018-04-30 2020-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. EUV collector contamination prevention
US10512147B1 (en) * 2018-07-27 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet radiation source and droplet catcher thereof
US10871719B2 (en) * 2018-08-17 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. EUV metal droplet catchers
NL2023633A (en) 2018-09-25 2020-04-30 Asml Netherlands Bv Laser system for target metrology and alteration in an euv light source
US11029324B2 (en) * 2018-09-28 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Particle image velocimetry of extreme ultraviolet lithography systems
KR20210127948A (ko) * 2019-02-26 2021-10-25 에이에스엠엘 네델란즈 비.브이. 극자외 광원 내의 타겟 공급 제어 장치 및 방법
KR102829107B1 (ko) 2019-05-02 2025-07-07 삼성전자주식회사 Euv 노광 장치 및 그를 이용한 반도체 소자의 제조 방법
JP7328046B2 (ja) * 2019-07-25 2023-08-16 ギガフォトン株式会社 Ｅｕｖチャンバ装置、極端紫外光生成システム、及び電子デバイスの製造方法
KR102897584B1 (ko) * 2020-09-04 2025-12-09 삼성전자주식회사 극자외선 광원 시스템
JP7359123B2 (ja) * 2020-10-12 2023-10-11 ウシオ電機株式会社 極端紫外光光源装置および受け板部材の保護方法
CN112629654A (zh) * 2020-12-11 2021-04-09 苏州瑞派宁科技有限公司 检测装置、激光等离子光源及其调节方法
TWI785447B (zh) * 2020-12-29 2022-12-01 台灣積體電路製造股份有限公司 極紫外光設備與其運作方法
US11815821B2 (en) * 2021-03-19 2023-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Module vessel with scrubber gutters sized to prevent overflow
WO2023285108A1 (en) 2021-07-14 2023-01-19 Asml Netherlands B.V. Droplet detection metrology utilizing metrology beam scattering
KR20240116479A (ko) * 2021-12-17 2024-07-29 에이에스엠엘 네델란즈 비.브이. Euv 타겟 물질 회수 장치
WO2025016697A1 (en) * 2023-07-19 2025-01-23 Asml Netherlands B.V. Source vessel, light source, euv-utilization system and method for controlling a source material
WO2025153241A1 (en) * 2024-01-17 2025-07-24 Asml Netherlands B.V. Modular gas purification system for radiation source

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070001130A1 (en) * 2005-06-29 2007-01-04 Cymer, Inc. LPP EUV plasma source material target delivery system
US20070265606A1 (en) * 2003-02-14 2007-11-15 Reliant Technologies, Inc. Method and Apparatus for Fractional Light-based Treatment of Obstructive Sleep Apnea

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268554A (en) * 1992-06-29 1993-12-07 General Electric Co. Apparatus and system for positioning a laser beam
JPH09245989A (ja) * 1996-03-13 1997-09-19 Nikon Corp Ｘ線発生装置
US6541786B1 (en) * 1997-05-12 2003-04-01 Cymer, Inc. Plasma pinch high energy with debris collector
JPH11166998A (ja) * 1997-12-04 1999-06-22 Mitsubishi Heavy Ind Ltd 廃棄物用溶融炉
JP2001108799A (ja) * 1999-10-08 2001-04-20 Nikon Corp Ｘ線発生装置、ｘ線露光装置及び半導体デバイスの製造方法
US6377651B1 (en) * 1999-10-11 2002-04-23 University Of Central Florida Laser plasma source for extreme ultraviolet lithography using a water droplet target
FR2799667B1 (fr) * 1999-10-18 2002-03-08 Commissariat Energie Atomique Procede et dispositif de generation d'un brouillard dense de gouttelettes micrometriques et submicrometriques, application a la generation de lumiere dans l'extreme ultraviolet notamment pour la lithographie
US6304630B1 (en) * 1999-12-24 2001-10-16 U.S. Philips Corporation Method of generating EUV radiation, method of manufacturing a device by means of said radiation, EUV radiation source unit, and lithographic projection apparatus provided with such a radiation source unit
US7180081B2 (en) 2000-06-09 2007-02-20 Cymer, Inc. Discharge produced plasma EUV light source
US7491954B2 (en) * 2006-10-13 2009-02-17 Cymer, Inc. Drive laser delivery systems for EUV light source
US7518787B2 (en) * 2006-06-14 2009-04-14 Cymer, Inc. Drive laser for EUV light source
US7476886B2 (en) 2006-08-25 2009-01-13 Cymer, Inc. Source material collection unit for a laser produced plasma EUV light source
JP2003022950A (ja) 2001-07-05 2003-01-24 Canon Inc Ｘ線光源用デブリ除去装置及び、デブリ除去装置を用いた露光装置
US6998620B2 (en) 2001-08-13 2006-02-14 Lambda Physik Ag Stable energy detector for extreme ultraviolet radiation detection
EP1313145A1 (en) 2001-11-19 2003-05-21 Agilent Technologies, Inc. (a Delaware corporation) Amplifier circuit apparatus and method of EMI suppression
US6859259B2 (en) * 2002-08-15 2005-02-22 Asml Netherlands B.V. Lithographic projection apparatus and reflector assembly for use therein
US6781135B2 (en) 2002-11-21 2004-08-24 Euv, Llc Universal EUV in-band intensity detector
GB2396249B (en) 2002-11-21 2005-01-12 Bookham Technology Plc Wavelength locker
US7217940B2 (en) 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
JP2004327213A (ja) 2003-04-24 2004-11-18 Komatsu Ltd Ｅｕｖ光発生装置におけるデブリ回収装置
KR101095394B1 (ko) * 2003-05-22 2011-12-16 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 하나 이상의 광학 컴포넌트를 클리닝하기 위한 방법 및장치
US7164144B2 (en) * 2004-03-10 2007-01-16 Cymer Inc. EUV light source
US7087914B2 (en) * 2004-03-17 2006-08-08 Cymer, Inc High repetition rate laser produced plasma EUV light source
JP4574211B2 (ja) * 2004-04-19 2010-11-04 キヤノン株式会社 光源装置、当該光源装置を有する露光装置
US7113261B2 (en) 2004-06-08 2006-09-26 Asml Netherlands B.V. Radiation system, lithographic apparatus, device manufacturing method and device manufactured thereby
US7109503B1 (en) 2005-02-25 2006-09-19 Cymer, Inc. Systems for protecting internal components of an EUV light source from plasma-generated debris
JP4517147B2 (ja) * 2004-11-26 2010-08-04 国立大学法人 宮崎大学 極端紫外光源装置
US20060114956A1 (en) 2004-11-30 2006-06-01 Sandstrom Richard L High power high pulse repetition rate gas discharge laser system bandwidth management
SG123767A1 (en) 2004-12-28 2006-07-26 Asml Netherlands Bv Lithographic apparatus, illumination system and filter system
US7485881B2 (en) * 2004-12-29 2009-02-03 Asml Netherlands B.V. Lithographic apparatus, illumination system, filter system and method for cooling a support of such a filter system
JP2006202671A (ja) * 2005-01-24 2006-08-03 Ushio Inc 極端紫外光光源装置及び極端紫外光光源装置で発生するデブリの除去方法
US7868304B2 (en) * 2005-02-07 2011-01-11 Asml Netherlands B.V. Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
JP5301165B2 (ja) * 2005-02-25 2013-09-25 サイマー インコーポレイテッド レーザ生成プラズマｅｕｖ光源
JP4749025B2 (ja) * 2005-04-19 2011-08-17 学校法人同志社 溶融塩中の微粒子の回収方法
JP4710463B2 (ja) * 2005-07-21 2011-06-29 ウシオ電機株式会社 極端紫外光発生装置
US7372058B2 (en) * 2005-09-27 2008-05-13 Asml Netherlands B.V. Ex-situ removal of deposition on an optical element
JP4875879B2 (ja) * 2005-10-12 2012-02-15 株式会社小松製作所 極端紫外光源装置の初期アライメント方法
US7715459B2 (en) 2005-11-01 2010-05-11 Cymer, Inc. Laser system
JP5156192B2 (ja) 2006-01-24 2013-03-06 ギガフォトン株式会社 極端紫外光源装置
JP4937616B2 (ja) 2006-03-24 2012-05-23 株式会社小松製作所 極端紫外光源装置
JP5162113B2 (ja) 2006-08-07 2013-03-13 ギガフォトン株式会社 極端紫外光源装置
JP2008078031A (ja) * 2006-09-22 2008-04-03 Yumex Inc 液滴回収装置およびその方法
JP4943121B2 (ja) 2006-11-07 2012-05-30 株式会社小松製作所 極端紫外光源装置及びコレクタミラー交換方法
US7696492B2 (en) 2006-12-13 2010-04-13 Asml Netherlands B.V. Radiation system and lithographic apparatus
US7838853B2 (en) * 2006-12-14 2010-11-23 Asml Netherlands B.V. Plasma radiation source, method of forming plasma radiation, apparatus for projecting a pattern from a patterning device onto a substrate and device manufacturing method
JP5086664B2 (ja) * 2007-03-02 2012-11-28 ギガフォトン株式会社 極端紫外光源装置
JP5149520B2 (ja) 2007-03-08 2013-02-20 ギガフォトン株式会社 極端紫外光源装置
JP5277496B2 (ja) 2007-04-27 2013-08-28 ギガフォトン株式会社 極端紫外光源装置および極端紫外光源装置の光学素子汚染防止装置
JP4932592B2 (ja) * 2007-05-14 2012-05-16 株式会社小松製作所 極端紫外光源装置
TWI402628B (zh) 2007-08-31 2013-07-21 Cymer Inc 控管極遠紫外線（ｅｕｖ）光微影裝置腔室間之氣體流動的系統
US8648999B2 (en) * 2010-07-22 2014-02-11 Cymer, Llc Alignment of light source focus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070265606A1 (en) * 2003-02-14 2007-11-15 Reliant Technologies, Inc. Method and Apparatus for Fractional Light-based Treatment of Obstructive Sleep Apnea
US20070001130A1 (en) * 2005-06-29 2007-01-04 Cymer, Inc. LPP EUV plasma source material target delivery system

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